Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
2100 | 2357 | 29.1 | 60% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
1210 | 2 | GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY | 9166 |
2100 | 1 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY//WEBSTER//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2357 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | journal | 59923 | 3% | 6% | 74 |
2 | WEBSTER | address | 48553 | 1% | 25% | 15 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | journal | 48530 | 11% | 2% | 250 |
4 | AVERAGE BOND ENERGY THEORY | authKW | 38860 | 0% | 100% | 3 |
5 | SURFACE SCIENCE | journal | 36172 | 12% | 1% | 275 |
6 | METAL SEMICONDUCTOR INTERFACES | authKW | 33059 | 1% | 9% | 29 |
7 | INDIUM ARSENIDE | authKW | 32627 | 1% | 10% | 26 |
8 | ADIABATIC BOND CHARGE MODEL | authKW | 29604 | 0% | 57% | 4 |
9 | GASB110 | authKW | 25907 | 0% | 100% | 2 |
10 | BAND DISCONTINUITY | authKW | 23308 | 0% | 30% | 6 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 23231 | 52% | 0% | 1222 |
2 | Physics, Applied | 9817 | 42% | 0% | 992 |
3 | Materials Science, Coatings & Films | 7728 | 13% | 0% | 315 |
4 | Nanoscience & Nanotechnology | 2184 | 11% | 0% | 261 |
5 | Chemistry, Physical | 1329 | 18% | 0% | 432 |
6 | Engineering, Electrical & Electronic | 877 | 14% | 0% | 321 |
7 | Physics, Multidisciplinary | 660 | 9% | 0% | 219 |
8 | Materials Science, Multidisciplinary | 29 | 6% | 0% | 150 |
9 | Spectroscopy | 23 | 2% | 0% | 37 |
10 | Microscopy | 4 | 0% | 0% | 6 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | WEBSTER | 48553 | 1% | 25% | 15 |
2 | RELIABIL QUAL | 17270 | 0% | 67% | 2 |
3 | UFR SCI MAT | 15413 | 0% | 24% | 5 |
4 | ATHROFA GOGLEDD DDWYRAIN CYMRU AMRL | 12953 | 0% | 100% | 1 |
5 | CIENCIAS FIS MAT CONDENSADA 112 | 12953 | 0% | 100% | 1 |
6 | CNRS M CEA | 12953 | 0% | 100% | 1 |
7 | CPNMC | 12953 | 0% | 100% | 1 |
8 | DEGM | 12953 | 0% | 100% | 1 |
9 | DIPARTIMENTO FIS TEOR INFM | 12953 | 0% | 100% | 1 |
10 | DIPARTIMENTO FIS TEOR IST NAZL FIS MAT | 12953 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 59923 | 3% | 6% | 74 |
2 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 48530 | 11% | 2% | 250 |
3 | SURFACE SCIENCE | 36172 | 12% | 1% | 275 |
4 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 22985 | 7% | 1% | 159 |
5 | PHYSICAL REVIEW B | 20245 | 22% | 0% | 512 |
6 | APPLIED SURFACE SCIENCE | 4476 | 5% | 0% | 112 |
7 | FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 4364 | 0% | 5% | 7 |
8 | SOLID STATE COMMUNICATIONS | 2882 | 3% | 0% | 77 |
9 | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2034 | 1% | 1% | 31 |
10 | SURFACE SCIENCE REPORTS | 1964 | 0% | 2% | 7 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | AVERAGE BOND ENERGY THEORY | 38860 | 0% | 100% | 3 | Search AVERAGE+BOND+ENERGY+THEORY | Search AVERAGE+BOND+ENERGY+THEORY |
2 | METAL SEMICONDUCTOR INTERFACES | 33059 | 1% | 9% | 29 | Search METAL+SEMICONDUCTOR+INTERFACES | Search METAL+SEMICONDUCTOR+INTERFACES |
3 | INDIUM ARSENIDE | 32627 | 1% | 10% | 26 | Search INDIUM+ARSENIDE | Search INDIUM+ARSENIDE |
4 | ADIABATIC BOND CHARGE MODEL | 29604 | 0% | 57% | 4 | Search ADIABATIC+BOND+CHARGE+MODEL | Search ADIABATIC+BOND+CHARGE+MODEL |
5 | GASB110 | 25907 | 0% | 100% | 2 | Search GASB110 | Search GASB110 |
6 | BAND DISCONTINUITY | 23308 | 0% | 30% | 6 | Search BAND+DISCONTINUITY | Search BAND+DISCONTINUITY |
7 | INAS110 | 17270 | 0% | 67% | 2 | Search INAS110 | Search INAS110 |
8 | AL GAAS100 | 12953 | 0% | 100% | 1 | Search AL+GAAS100 | Search AL+GAAS100 |
9 | ALKALI METALS ON GAAS | 12953 | 0% | 100% | 1 | Search ALKALI+METALS+ON+GAAS | Search ALKALI+METALS+ON+GAAS |
10 | ALSB1 1 0 | 12953 | 0% | 100% | 1 | Search ALSB1+1+0 | Search ALSB1+1+0 |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SCHMIDT, WG , BECHSTEDT, F , SRIVASTAVA, GP , (1996) ADSORPTION OF GROUP-V ELEMENTS ON III-V(110) SURFACES.SURFACE SCIENCE REPORTS. VOL. 25. ISSUE 5-7. P. 141 -223 | 163 | 83% | 55 |
2 | FRANCIOSI, A , VAN DE WALLE, CG , (1996) HETEROJUNCTION BAND OFFSET ENGINEERING.SURFACE SCIENCE REPORTS. VOL. 25. ISSUE 1-4. P. 1 -+ | 151 | 43% | 220 |
3 | DUKE, CB , (1994) RECONSTRUCTION OF THE CLEAVAGE FACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS.FESTKORPERPROBLEME - ADVANCES IN SOLID STATE PHYSICS 33. VOL. 33. ISSUE . P. 1 -36 | 110 | 85% | 2 |
4 | ESSER, N , RICHTER, W , (2000) RAMAN SCATTERING FROM SURFACE PHONONS.LIGHT SCATTERING IN SOLIDS VIII. VOL. 76. ISSUE . P. 96 -168 | 87 | 55% | 4 |
5 | BECHSTEDT, F , SCHEFFLER, M , (1993) ALKALI ADSORPTION ON GAAS(110) - ATOMIC-STRUCTURE, ELECTRONIC STATES AND SURFACE DIPOLES.SURFACE SCIENCE REPORTS. VOL. 18. ISSUE 5-6. P. 145 -198 | 71 | 72% | 87 |
6 | MONCH, W , (1990) ON THE PHYSICS OF METAL-SEMICONDUCTOR INTERFACES.REPORTS ON PROGRESS IN PHYSICS. VOL. 53. ISSUE 3. P. 221 -278 | 76 | 68% | 176 |
7 | FORD, WK , GUO, T , WAN, KJ , DUKE, CB , (1992) GROWTH AND ATOMIC GEOMETRY OF BISMUTH AND ANTIMONY ON INP(110) STUDIED USING LOW-ENERGY ELECTRON-DIFFRACTION.PHYSICAL REVIEW B. VOL. 45. ISSUE 20. P. 11896-11910 | 53 | 98% | 44 |
8 | MARGARITONDO, G , (1999) INTERFACE STATES AT SEMICONDUCTOR JUNCTIONS.REPORTS ON PROGRESS IN PHYSICS. VOL. 62. ISSUE 5. P. 765 -808 | 71 | 50% | 43 |
9 | GEURTS, J , (1993) ANALYSIS OF BAND BENDING AT III-V-SEMICONDUCTOR INTERFACES BY RAMAN-SPECTROSCOPY.SURFACE SCIENCE REPORTS. VOL. 18. ISSUE 1-3. P. 1 -89 | 88 | 50% | 46 |
10 | GRAZHULIS, VA , (1991) LOW-TEMPERATURE STUDIES OF SEMICONDUCTOR SURFACES.PROGRESS IN SURFACE SCIENCE. VOL. 36. ISSUE 2. P. 89-175 | 83 | 60% | 14 |
Classes with closest relation at Level 1 |