Class information for:
Level 1: III V MOSFET//GAAS MOSFET//INGAAS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
6482 1478 25.0 74%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
1210 2             GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY 9166
6482 1                   III V MOSFET//GAAS MOSFET//INGAAS 1478

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 III V MOSFET authKW 302973 1% 67% 22
2 GAAS MOSFET authKW 293802 1% 89% 16
3 INGAAS authKW 288784 7% 13% 110
4 III V authKW 240135 3% 23% 50
5 INGAAS MOSFET authKW 193951 1% 72% 13
6 GAAS MOS authKW 103291 0% 100% 5
7 III V SEMICONDUCTORS authKW 86781 7% 4% 107
8 BULK OXIDE TRAP authKW 82633 0% 100% 4
9 GALLIUM ARSENIDE authKW 78533 6% 4% 94
10 ATOMIC LAYER DEPOSITION authKW 75691 6% 4% 89

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 21028 75% 0% 1105
2 Engineering, Electrical & Electronic 4584 34% 0% 497
3 Nanoscience & Nanotechnology 3123 16% 0% 239
4 Materials Science, Coatings & Films 1494 8% 0% 113
5 Physics, Condensed Matter 911 15% 0% 219
6 Materials Science, Multidisciplinary 551 17% 0% 244
7 Optics 201 6% 0% 93
8 Electrochemistry 76 3% 0% 38
9 Crystallography 41 2% 0% 31
10 Chemistry, Physical 29 6% 0% 96

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 CSEA 65285 1% 23% 14
2 MICROWAVE DEVICE IC 45579 1% 28% 8
3 TSMC RD 41316 0% 100% 2
4 ELECT ENGN INFORMAT SYST 36931 2% 5% 35
5 WIDE BAND G SEMICOND MAT DEVICES CHIN 36721 0% 44% 4
6 TYNDALL 35770 3% 4% 49
7 ADV DEVICES SUSTAINABLE ENERGY ADSEL 27543 0% 67% 2
8 ELECT ECE 20900 1% 11% 9
9 ADV TECHNOL DEV ILITY 20658 0% 100% 1
10 ASS SECT ESAT INSYS 20658 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 APPLIED PHYSICS LETTERS 24501 24% 0% 361
2 IEEE ELECTRON DEVICE LETTERS 23318 7% 1% 101
3 MICROELECTRONIC ENGINEERING 15683 6% 1% 88
4 APPLIED PHYSICS EXPRESS 9915 3% 1% 42
5 IEEE TRANSACTIONS ON ELECTRON DEVICES 9726 6% 1% 85
6 SOLID-STATE ELECTRONICS 6499 4% 1% 56
7 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 5649 5% 0% 68
8 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 4570 1% 1% 17
9 ELECTROCHEMICAL AND SOLID STATE LETTERS 2096 1% 0% 21
10 JOURNAL OF APPLIED PHYSICS 2044 7% 0% 106

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 III V MOSFET 302973 1% 67% 22 Search III+V+MOSFET Search III+V+MOSFET
2 GAAS MOSFET 293802 1% 89% 16 Search GAAS+MOSFET Search GAAS+MOSFET
3 INGAAS 288784 7% 13% 110 Search INGAAS Search INGAAS
4 III V 240135 3% 23% 50 Search III+V Search III+V
5 INGAAS MOSFET 193951 1% 72% 13 Search INGAAS+MOSFET Search INGAAS+MOSFET
6 GAAS MOS 103291 0% 100% 5 Search GAAS+MOS Search GAAS+MOS
7 III V SEMICONDUCTORS 86781 7% 4% 107 Search III+V+SEMICONDUCTORS Search III+V+SEMICONDUCTORS
8 BULK OXIDE TRAP 82633 0% 100% 4 Search BULK+OXIDE+TRAP Search BULK+OXIDE+TRAP
9 GALLIUM ARSENIDE 78533 6% 4% 94 Search GALLIUM+ARSENIDE Search GALLIUM+ARSENIDE
10 ATOMIC LAYER DEPOSITION 75691 6% 4% 89 Search ATOMIC+LAYER+DEPOSITION Search ATOMIC+LAYER+DEPOSITION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 HINKLE, CL , VOGEL, EM , YE, PD , WALLACE, RM , (2011) INTERFACIAL CHEMISTRY OF OXIDES ON INXGA(1-X)AS AND IMPLICATIONS FOR MOSFET APPLICATIONS.CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE. VOL. 15. ISSUE 5. P. 188-207 100 65% 68
2 GOUGOUSI, T , (2016) ATOMIC LAYER DEPOSITION OF HIGH-K DIELECTRICS ON III-V SEMICONDUCTOR SURFACES.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 62. ISSUE 4. P. 1 -21 105 54% 0
3 ROBERTSON, J , GUO, Y , LIN, L , (2015) DEFECT STATE PASSIVATION AT III-V OXIDE INTERFACES FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES.JOURNAL OF APPLIED PHYSICS. VOL. 117. ISSUE 11. P. - 55 75% 14
4 AMEEN, M , NYNS, L , SIONCKE, S , LIN, D , IVANOV, T , CONARD, T , MEERSSCHAUT, J , FETEHA, MY , VAN ELSHOCHT, S , DELABIE, A , (2014) AL2O3/INGAAS METAL-OXIDE-SEMICONDUCTOR INTERFACE PROPERTIES: IMPACT OF GD2O3 AND SC2O3 INTERFACIAL LAYERS BY ATOMIC LAYER DEPOSITION.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 3. ISSUE 11. P. N133 -N141 55 79% 8
5 DEL ALAMO, JA , (2011) NANOMETRE-SCALE ELECTRONICS WITH III-V COMPOUND SEMICONDUCTORS.NATURE. VOL. 479. ISSUE 7373. P. 317 -323 33 66% 515
6 GALATAGE, RV , ZHERNOKLETOV, DM , DONG, H , BRENNAN, B , HINKLE, CL , WALLACE, RM , VOGEL, EM , (2014) ACCUMULATION CAPACITANCE FREQUENCY DISPERSION OF III-V METAL-INSULATOR-SEMICONDUCTOR DEVICES DUE TO DISORDER INDUCED GAP STATES.JOURNAL OF APPLIED PHYSICS. VOL. 116. ISSUE 1. P. - 43 84% 25
7 HENEGAR, AJ , GOUGOUSI, T , (2016) COMPARISON OF THE REACTIVITY OF ALKYL AND ALKYL AMINE PRECURSORS WITH NATIVE OXIDE GAAS(100) AND INAS(100) SURFACES.APPLIED SURFACE SCIENCE. VOL. 390. ISSUE . P. 870 -881 46 79% 1
8 HENEGAR, AJ , GOUGOUSI, T , (2016) NATIVE OXIDE TRANSPORT AND REMOVAL DURING THE ATOMIC LAYER DEPOSITION OF TA2O5 ON INAS(100) SURFACES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 34. ISSUE 3. P. - 34 85% 4
9 HE, G , CHEN, XS , SUN, ZQ , (2013) INTERFACE ENGINEERING AND CHEMISTRY OF HF-BASED HIGH-K DIELECTRICS ON III-V SUBSTRATES.SURFACE SCIENCE REPORTS. VOL. 68. ISSUE 1. P. 68 -107 83 41% 29
10 LIN, L , GUO, YZ , GILLEN, R , ROBERTSON, J , (2013) CHEMICAL TRENDS OF DEFECTS AT HFO2:GAAS AND AL2O3:GAAS/INAS/INP/GASB INTERFACES.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 13. P. - 47 76% 7

Classes with closest relation at Level 1


Rank Class id link
1 8029 SULFUR PASSIVATION//INTERFACE CONTROL LAYER//NH42S X TREATMENT
2 9326 GERMANIUM//MBE//GE MOS
3 10794 CONDUCTANCE TRANSIENTS//INDIUM PHOSPHIDE100//INSULATOR DAMAGE
4 13299 ECR HYDROGEN PLASMA//ELECTROMAGNETIC GREENS FUNCTION//IN SITU VACUUM PROCESS
5 89 HFO2//HIGH K DIELECTRICS//HIGH K
6 32367 ADV DEVICE TECHNLOL//BANDGAP CORRECTION//BREMEN COMP MATER SCI
7 3722 STRAINED SI//MOSFET//BALLISTIC TRANSPORT
8 6739 MHEMT//HEMT//PHEMT
9 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
10 20013 Y2O3 FILM//GADOLINIUM OXIDE GD2O3//Y2O3 THIN FILMS

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