Class information for:
Level 1: SULFUR PASSIVATION//INTERFACE CONTROL LAYER//NH42S X TREATMENT

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
8029 1301 22.1 74%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
1210 2             GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY 9166
8029 1                   SULFUR PASSIVATION//INTERFACE CONTROL LAYER//NH42S X TREATMENT 1301

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SULFUR PASSIVATION authKW 342154 2% 54% 27
2 INTERFACE CONTROL LAYER authKW 150199 1% 80% 8
3 NH42S X TREATMENT authKW 136543 1% 73% 8
4 NH42S X authKW 111815 1% 53% 9
5 SI INTERFACE CONTROL LAYER authKW 105608 0% 75% 6
6 INTER E QUANTUM ELECT address 100899 2% 19% 23
7 PHOSPHIDIZATION authKW 83815 0% 71% 5
8 FG OBERFLACHENFOR address 70407 0% 100% 3
9 PHOSPHINE PLASMA authKW 62581 0% 67% 4
10 GAAS authKW 61670 7% 3% 89

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 12122 61% 0% 796
2 Materials Science, Coatings & Films 6558 16% 0% 214
3 Physics, Condensed Matter 4366 31% 0% 407
4 Chemistry, Physical 954 20% 0% 265
5 Nanoscience & Nanotechnology 698 9% 0% 113
6 Materials Science, Multidisciplinary 511 17% 0% 219
7 Engineering, Electrical & Electronic 435 13% 0% 170
8 Electrochemistry 108 3% 0% 40
9 Crystallography 48 2% 0% 30
10 Physics, Multidisciplinary 43 4% 0% 58

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 INTER E QUANTUM ELECT 100899 2% 19% 23
2 FG OBERFLACHENFOR 70407 0% 100% 3
3 QUANTUM SEMICOND PHOTON BASED BIONANOTECHNO 57490 1% 35% 7
4 SEMICOND SUR E PHYS 53640 0% 57% 4
5 INTERDISCIPLINARY TECHNOL INNOVAT 3IT 53632 1% 29% 8
6 NANODEVICE PROC 46938 0% 100% 2
7 JOINT BIOMED ENGN NCSU UNC CH 35201 0% 50% 3
8 ELE ON 13TH 23469 0% 100% 1
9 ELECT COMP ENGN QUANTUM SEMICOND PHO 23469 0% 100% 1
10 EXCELLENCE GENIE INFORMAT 23469 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 APPLIED SURFACE SCIENCE 6453 8% 0% 99
2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 6436 5% 0% 68
3 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 5312 4% 0% 57
4 SEMICONDUCTORS 4975 3% 1% 38
5 APPLIED PHYSICS LETTERS 4715 12% 0% 151
6 SURFACE SCIENCE 3367 5% 0% 63
7 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 3122 5% 0% 65
8 JOURNAL OF APPLIED PHYSICS 2835 9% 0% 116
9 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 1830 2% 0% 31
10 INSTITUTE OF PHYSICS CONFERENCE SERIES 1463 2% 0% 25

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SULFUR PASSIVATION 342154 2% 54% 27 Search SULFUR+PASSIVATION Search SULFUR+PASSIVATION
2 INTERFACE CONTROL LAYER 150199 1% 80% 8 Search INTERFACE+CONTROL+LAYER Search INTERFACE+CONTROL+LAYER
3 NH42S X TREATMENT 136543 1% 73% 8 Search NH42S+X+TREATMENT Search NH42S+X+TREATMENT
4 NH42S X 111815 1% 53% 9 Search NH42S+X Search NH42S+X
5 SI INTERFACE CONTROL LAYER 105608 0% 75% 6 Search SI+INTERFACE+CONTROL+LAYER Search SI+INTERFACE+CONTROL+LAYER
6 PHOSPHIDIZATION 83815 0% 71% 5 Search PHOSPHIDIZATION Search PHOSPHIDIZATION
7 PHOSPHINE PLASMA 62581 0% 67% 4 Search PHOSPHINE+PLASMA Search PHOSPHINE+PLASMA
8 GAAS 61670 7% 3% 89 Search GAAS Search GAAS
9 SURFACE PASSIVATION 55270 3% 6% 39 Search SURFACE+PASSIVATION Search SURFACE+PASSIVATION
10 DIGS MODEL 53333 0% 45% 5 Search DIGS+MODEL Search DIGS+MODEL

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 BESSOLOV, VN , LEBEDEV, MV , (1998) CHALCOGENIDE PASSIVATION OF III-V SEMICONDUCTOR SURFACES.SEMICONDUCTORS. VOL. 32. ISSUE 11. P. 1141 -1156 152 89% 90
2 MANCHENO-POSSO, P , MUSCAT, AJ , (2017) SELF-ASSEMBLY OF ALKANETHIOLATES DIRECTS SULFUR BONDING WITH GAAS(100).APPLIED SURFACE SCIENCE. VOL. 397. ISSUE . P. 1 -12 55 65% 0
3 SEKER, F , MEEKER, K , KUECH, TF , ELLIS, AB , (2000) SURFACE CHEMISTRY OF PROTOTYPICAL BULK II-VI AND III-V SEMICONDUCTORS AND IMPLICATIONS FOR CHEMICAL SENSING.CHEMICAL REVIEWS. VOL. 100. ISSUE 7. P. 2505 -2536 82 49% 237
4 MCGUINESS, CL , SHAPORENKO, A , ZHARNIKOV, M , WALKER, AV , ALLARA, DL , (2007) MOLECULAR SELF-ASSEMBLY AT BARE SEMICONDUCTOR SURFACES: INVESTIGATION OF THE CHEMICAL AND ELECTRONIC PROPERTIES OF THE ALKANETHIOLATE-GAAS(001) INTERFACE.JOURNAL OF PHYSICAL CHEMISTRY C. VOL. 111. ISSUE 11. P. 4226 -4234 54 66% 48
5 ZHAO, Q , ZHAI, GJ , KWOK, RWM , (2006) STRUCTURAL AND ELECTRICAL ANALYSIS OF S+ ION BOMBARDED P-INP(100).APPLIED SURFACE SCIENCE. VOL. 253. ISSUE 3. P. 1356-1364 40 87% 4
6 ARUDRA, P , MARSHALL, GM , LIU, N , DUBOWSKI, JJ , (2012) ENHANCED PHOTONIC STABILITY OF GAAS IN AQUEOUS ELECTROLYTE USING ALKANETHIOL SELF-ASSEMBLED MONO LAYERS AND POSTPROCESSING WITH AMMONIUM SULFIDE.JOURNAL OF PHYSICAL CHEMISTRY C. VOL. 116. ISSUE 4. P. 2891-2895 30 91% 8
7 HU, JY , MAHMOOD, W , ZHAO, Q , (2014) EFFECT OF AR+, HE+, AND S+ IRRADIATION ON N-INP SINGLE CRYSTAL.CHINESE JOURNAL OF CHEMICAL PHYSICS. VOL. 27. ISSUE 1. P. 82 -86 30 88% 0
8 ZHAO, Q , KWOK, RWM , LAU, WM , (2002) ORDERING AND SURFACE STATE REDUCTION OF GAAS (100) BY LOW ENERGY S+ BOMBARDMENT.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 20. ISSUE 1. P. 165-169 33 94% 7
9 LI, DF , GUO, ZC , LI, BL , DONG, HN , XIAO, HY , (2011) STRUCTURAL AND ELECTRONIC PROPERTIES OF SULFUR-PASSIVATED INAS(001) (2X6) SURFACE.CHINESE PHYSICS LETTERS. VOL. 28. ISSUE 8. P. - 32 71% 2
10 CARRAD, DJ , BURKE, AM , REECE, PJ , LYTTLETON, RW , WADDINGTON, DEJ , RAI, A , REUTER, D , WIECK, AD , MICOLICH, AP , (2013) THE EFFECT OF (NH4)(2)S-X PASSIVATION ON THE (311)A GAAS SURFACE AND ITS USE IN ALGAAS/GAAS HETEROSTRUCTURE DEVICES.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 25. ISSUE 32. P. - 39 55% 3

Classes with closest relation at Level 1


Rank Class id link
1 10794 CONDUCTANCE TRANSIENTS//INDIUM PHOSPHIDE100//INSULATOR DAMAGE
2 6482 III V MOSFET//GAAS MOSFET//INGAAS
3 13299 ECR HYDROGEN PLASMA//ELECTROMAGNETIC GREENS FUNCTION//IN SITU VACUUM PROCESS
4 4033 REFLECTANCE ANISOTROPY SPECTROSCOPY//REFLECTANCE DIFFERENCE SPECTROSCOPY//REFLECTION ANISOTROPY SPECTROSCOPY
5 2100 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY//WEBSTER//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
6 31635 2D BIFURCATIONS//QUANTUM TUNNELING WITH DISSIPATION//EDUC SCANNING PROBE MICROSCOPY
7 31535 FIELD INDUCED JUNCTION//INSB GATE CONTROLLED DIODE//PIXEL LINEARITY
8 10911 PHOTOREFLECTANCE//FRANZ KELDYSH OSCILLATIONS//NEW YORK STATE ADV TECHNOL ULTRAFAST PHOTON M
9 36570 NANOMETER SIZED SCHOTTKY CONTACT//KSRC//BRIDGE METAL ION
10 25791 TEXTURED INTERFACE//MICRORELIEF INTERFACE//BEIJING CONDENSD MATTER PHYS

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