Class information for:
Level 1: 4H SIC//CHANNEL MOBILITY//SIO2 SIC INTERFACE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
5987 1547 19.8 71%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
628 3       SILICON CARBIDE//4H SIC//SIC 13252
671 2             SILICON CARBIDE//4H SIC//SIC 13252
5987 1                   4H SIC//CHANNEL MOBILITY//SIO2 SIC INTERFACE 1547

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 4H SIC authKW 538188 8% 22% 126
2 CHANNEL MOBILITY authKW 499547 3% 56% 45
3 SIO2 SIC INTERFACE authKW 476498 2% 93% 26
4 BIPOLAR JUNCTION TRANSISTORS BJTS authKW 296866 1% 79% 19
5 SILICON CARBIDE SIC authKW 247372 4% 19% 67
6 SIC SIO2 INTERFACE authKW 177631 1% 100% 9
7 NO ANNEALING authKW 159866 1% 90% 9
8 SILICON CARBIDE authKW 155954 12% 4% 190
9 MOSFET authKW 145052 10% 5% 157
10 NEW MAT DEVICES RD address 138157 0% 100% 7

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 10228 52% 0% 806
2 Engineering, Electrical & Electronic 5883 37% 0% 571
3 Materials Science, Characterization, Testing 2775 5% 0% 84
4 Materials Science, Multidisciplinary 2516 30% 0% 464
5 Materials Science, Coatings & Films 2274 9% 0% 141
6 Physics, Condensed Matter 1320 17% 0% 263
7 Nanoscience & Nanotechnology 436 7% 0% 102
8 Physics, Multidisciplinary 102 5% 0% 85
9 Optics 71 4% 0% 67
10 Electrochemistry 7 1% 0% 19

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 NEW MAT DEVICES RD 138157 0% 100% 7
2 NEW BRUNSWICK TECHNOL 122970 1% 69% 9
3 NEW BRUNSWICK TECH 98684 0% 100% 5
4 ULTRA LOW LOSS POWER DEVICE TECHNOL BODY 98674 1% 50% 10
5 PGMICRO 97143 1% 31% 16
6 SIC 95750 2% 13% 37
7 ADV MAT DEVICES NANOTECHNOL 84171 2% 18% 24
8 RD ASSOC 78947 0% 100% 4
9 SEMICOND POWER GRP 78947 0% 100% 4
10 POWER SEMICOND 56824 1% 24% 12

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MATERIALS SCIENCE FORUM 80641 17% 2% 267
2 IEEE ELECTRON DEVICE LETTERS 34719 8% 1% 126
3 IEEE TRANSACTIONS ON ELECTRON DEVICES 16483 7% 1% 113
4 SOLID-STATE ELECTRONICS 6430 4% 1% 57
5 APPLIED PHYSICS LETTERS 5193 11% 0% 173
6 JAPANESE JOURNAL OF APPLIED PHYSICS 4405 4% 0% 60
7 MICROELECTRONIC ENGINEERING 3051 3% 0% 40
8 MICROELECTRONICS RELIABILITY 3051 2% 0% 33
9 JOURNAL OF APPLIED PHYSICS 2142 7% 0% 111
10 JOURNAL OF ELECTRONIC MATERIALS 1779 2% 0% 30

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 4H SIC 538188 8% 22% 126 Search 4H+SIC Search 4H+SIC
2 CHANNEL MOBILITY 499547 3% 56% 45 Search CHANNEL+MOBILITY Search CHANNEL+MOBILITY
3 SIO2 SIC INTERFACE 476498 2% 93% 26 Search SIO2+SIC+INTERFACE Search SIO2+SIC+INTERFACE
4 BIPOLAR JUNCTION TRANSISTORS BJTS 296866 1% 79% 19 Search BIPOLAR+JUNCTION+TRANSISTORS+BJTS Search BIPOLAR+JUNCTION+TRANSISTORS+BJTS
5 SILICON CARBIDE SIC 247372 4% 19% 67 Search SILICON+CARBIDE+SIC Search SILICON+CARBIDE+SIC
6 SIC SIO2 INTERFACE 177631 1% 100% 9 Search SIC+SIO2+INTERFACE Search SIC+SIO2+INTERFACE
7 NO ANNEALING 159866 1% 90% 9 Search NO+ANNEALING Search NO+ANNEALING
8 SILICON CARBIDE 155954 12% 4% 190 Search SILICON+CARBIDE Search SILICON+CARBIDE
9 MOSFET 145052 10% 5% 157 Search MOSFET Search MOSFET
10 BIPOLAR JUNCTION TRANSISTOR BJT 133782 1% 34% 20 Search BIPOLAR+JUNCTION+TRANSISTOR+BJT Search BIPOLAR+JUNCTION+TRANSISTOR+BJT

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 LIU, G , TUTTLE, BR , DHAR, S , (2015) SILICON CARBIDE: A UNIQUE PLATFORM FOR METAL-OXIDE-SEMICONDUCTOR PHYSICS.APPLIED PHYSICS REVIEWS. VOL. 2. ISSUE 2. P. - 70 75% 16
2 RAYNAUD, C , (2001) SILICA FILMS ON SILICON CARBIDE: A REVIEW OF ELECTRICAL PROPERTIES AND DEVICE APPLICATIONS.JOURNAL OF NON-CRYSTALLINE SOLIDS. VOL. 280. ISSUE 1-3. P. 1 -31 96 81% 120
3 SIDDIQUI, A , ELGABRA, H , SINGH, S , (2016) THE CURRENT STATUS AND THE FUTURE PROSPECTS OF SURFACE PASSIVATION IN 4H-SIC TRANSISTORS.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 16. ISSUE 3. P. 419 -428 42 98% 0
4 LEE, KY , CHANG, YH , HUANG, YH , WU, SD , CHUNG, CY , HUANG, CF , LEE, TC , (2013) INFLUENCE OF LOW TEMPERATURE OXIDATION AND NITROGEN PASSIVATION ON THE MOS INTERFACE OF C-FACE 4H-SIC.APPLIED SURFACE SCIENCE. VOL. 282. ISSUE . P. 126 -132 41 93% 1
5 AFANAS'EV, VV , CIOBANU, F , DIMITRIJEV, S , PENSL, G , STESMANS, A , (2004) BAND ALIGNMENT AND DEFECT STATES AT SIC/OXIDE INTERFACES.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 16. ISSUE 17. P. S1839-S1856 55 76% 68
6 ZHU, QZ , QIN, FW , LI, WB , WANG, DJ , (2014) ELECTRICAL AND PHYSICAL PROPERTIES OF 4H-SIC MOS INTERFACE WITH ELECTRON CYCLOTRON RESONANCE MICROWAVE NITROGEN PLASMA POST-OXIDATION ANNEALING.PHYSICA B-CONDENSED MATTER. VOL. 432. ISSUE . P. 89 -95 40 82% 6
7 NOBORIO, M , SUDA, J , BELJAKOWA, S , KRIEGER, M , KIMOTO, T , (2009) 4H-SIC MISFETS WITH NITROGEN-CONTAINING INSULATORS.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 206. ISSUE 10. P. 2374 -2390 43 84% 12
8 MOGHADAM, HA , DIMITRIJEV, S , HAN, JS , HAASMANN, D , (2016) ACTIVE DEFECTS IN MOS DEVICES ON 4H-SIC: A CRITICAL REVIEW.MICROELECTRONICS RELIABILITY. VOL. 60. ISSUE . P. 1 -9 38 75% 1
9 PITTHAN, E , GOBBI, AL , BOUDINOV, HI , STEDILE, FC , (2015) SIC NITRIDATION BY NH3 ANNEALING AND ITS EFFECTS IN MOS CAPACITORS WITH DEPOSITED SIO2 FILMS.JOURNAL OF ELECTRONIC MATERIALS. VOL. 44. ISSUE 8. P. 2823 -2828 29 97% 1
10 YOSHIOKA, H , NAKAMURA, T , KIMOTO, T , (2012) GENERATION OF VERY FAST STATES BY NITRIDATION OF THE SIO2/SIC INTERFACE.JOURNAL OF APPLIED PHYSICS. VOL. 112. ISSUE 2. P. - 30 91% 26

Classes with closest relation at Level 1


Rank Class id link
1 9042 OHMIC CONTACT//4H SIC//EDGE TERMINATION
2 15708 SIMA//HEXAGONAL SURFACES//SIC0001
3 2631 PHYS MEASUREMENT TECHNOL//MATERIALS SCIENCE FORUM//4H SIC
4 24234 MESFET//4H SIC MESFET//SIC MESFET
5 33212 J AN SCI TECHNOL ORG//CYANIDE TREATMENT//DISPLAY TECHNOL DEV GRP
6 2541 MICROPIPE//SUBLIMATION GROWTH//SEMICONDUCTING SILICON COMPOUNDS
7 37133 SICGE//SI 6H SIC HETEROJUNCTION//SI 6H SIC
8 5040 IGBT//INSULATED GATE BIPOLAR TRANSISTOR IGBT//INSULATED GATE BIPOLAR TRANSISTORS
9 7015 3C SIC//MONOMETHYLSILANE//FG NANOTECHNOL
10 34788 CERIUM MAGNETOPLUMBITE//EDS SPECTRA//ENAMEL INSERT RESTORATION

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