Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
37133 | 66 | 14.6 | 71% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
628 | 3 | SILICON CARBIDE//4H SIC//SIC | 13252 |
671 | 2 | SILICON CARBIDE//4H SIC//SIC | 13252 |
37133 | 1 | SICGE//SI 6H SIC HETEROJUNCTION//SI 6H SIC | 66 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SICGE | authKW | 2775972 | 9% | 100% | 6 |
2 | SI 6H SIC HETEROJUNCTION | authKW | 1387986 | 5% | 100% | 3 |
3 | SI 6H SIC | authKW | 925324 | 3% | 100% | 2 |
4 | SICGE SIC | authKW | 925324 | 3% | 100% | 2 |
5 | 3C SI1 XC1 YGEXY | authKW | 462662 | 2% | 100% | 1 |
6 | ADV MAT SEMICONDUCTOR DEVICE TECHNOL | address | 462662 | 2% | 100% | 1 |
7 | EELS HAADF | authKW | 462662 | 2% | 100% | 1 |
8 | ENERGING MAT | address | 462662 | 2% | 100% | 1 |
9 | FAULTED GESI NANOCRYSTALS | authKW | 462662 | 2% | 100% | 1 |
10 | FG WERKSTOFFTECHNOL | address | 462662 | 2% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 349 | 47% | 0% | 31 |
2 | Materials Science, Multidisciplinary | 123 | 32% | 0% | 21 |
3 | Microscopy | 111 | 5% | 0% | 3 |
4 | Physics, Condensed Matter | 79 | 20% | 0% | 13 |
5 | Physics, Multidisciplinary | 60 | 15% | 0% | 10 |
6 | Materials Science, Characterization, Testing | 35 | 3% | 0% | 2 |
7 | Engineering, Electrical & Electronic | 32 | 15% | 0% | 10 |
8 | Materials Science, Coatings & Films | 21 | 5% | 0% | 3 |
9 | Nanoscience & Nanotechnology | 15 | 6% | 0% | 4 |
10 | Optics | 15 | 8% | 0% | 5 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ADV MAT SEMICONDUCTOR DEVICE TECHNOL | 462662 | 2% | 100% | 1 |
2 | ENERGING MAT | 462662 | 2% | 100% | 1 |
3 | FG WERKSTOFFTECHNOL | 462662 | 2% | 100% | 1 |
4 | FWHIM | 462662 | 2% | 100% | 1 |
5 | OGE STOMATOL | 462662 | 2% | 100% | 1 |
6 | FG EXPT PHYS | 231330 | 2% | 50% | 1 |
7 | FIS LICADA CX2 | 231330 | 2% | 50% | 1 |
8 | F ENIUS | 154219 | 2% | 33% | 1 |
9 | ION BEAM PHYS MAT SCI | 115664 | 2% | 25% | 1 |
10 | NSF MRSEC TECHNOL ENABLING HETEROSTRUCT MAT | 115664 | 2% | 25% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF ELECTRON MICROSCOPY | 995 | 3% | 0% | 2 |
2 | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 719 | 3% | 0% | 2 |
3 | CHINESE PHYSICS | 552 | 3% | 0% | 2 |
4 | MICROELECTRONICS JOURNAL | 480 | 3% | 0% | 2 |
5 | JOURNAL OF ELECTRONIC MATERIALS | 425 | 5% | 0% | 3 |
6 | CHINESE PHYSICS B | 421 | 5% | 0% | 3 |
7 | MATERIALS LETTERS | 325 | 6% | 0% | 4 |
8 | SURFACE AND INTERFACE ANALYSIS | 274 | 3% | 0% | 2 |
9 | CHINESE PHYSICS LETTERS | 273 | 5% | 0% | 3 |
10 | MATERIALS SCIENCE FORUM | 234 | 5% | 0% | 3 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SICGE | 2775972 | 9% | 100% | 6 | Search SICGE | Search SICGE |
2 | SI 6H SIC HETEROJUNCTION | 1387986 | 5% | 100% | 3 | Search SI+6H+SIC+HETEROJUNCTION | Search SI+6H+SIC+HETEROJUNCTION |
3 | SI 6H SIC | 925324 | 3% | 100% | 2 | Search SI+6H+SIC | Search SI+6H+SIC |
4 | SICGE SIC | 925324 | 3% | 100% | 2 | Search SICGE+SIC | Search SICGE+SIC |
5 | 3C SI1 XC1 YGEXY | 462662 | 2% | 100% | 1 | Search 3C+SI1+XC1+YGEXY | Search 3C+SI1+XC1+YGEXY |
6 | EELS HAADF | 462662 | 2% | 100% | 1 | Search EELS+HAADF | Search EELS+HAADF |
7 | FAULTED GESI NANOCRYSTALS | 462662 | 2% | 100% | 1 | Search FAULTED+GESI+NANOCRYSTALS | Search FAULTED+GESI+NANOCRYSTALS |
8 | HETERODIODES | 462662 | 2% | 100% | 1 | Search HETERODIODES | Search HETERODIODES |
9 | HETEROEPITAXY SIC | 462662 | 2% | 100% | 1 | Search HETEROEPITAXY+SIC | Search HETEROEPITAXY+SIC |
10 | HETEROSTRUCTURE SEMICONDUCTOR DEVICES | 462662 | 2% | 100% | 1 | Search HETEROSTRUCTURE+SEMICONDUCTOR+DEVICES | Search HETEROSTRUCTURE+SEMICONDUCTOR+DEVICES |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | HAN, YL , PU, HB , ZANG, Y , LI, LB , (2016) EPITAXIAL GROWTH OF GE FILM ON 6H-SIC(0001) BY LPCVD.OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS. VOL. 10. ISSUE 9-10. P. 737 -739 | 7 | 88% | 0 |
2 | PU, HB , CAO, L , CHEN, ZM , REN, J , (2011) OPTICALLY CONTROLLED SICGE/SIC HETEROJUNCTION TRANSISTOR WITH CHARGE-COMPENSATION LAYER.CHINESE PHYSICS B. VOL. 20. ISSUE 5. P. - | 8 | 80% | 2 |
3 | LI, LB , CHEN, ZM , XIE, LF , YANG, C , (2014) LATTICE-MATCHING OF SI GROWN ON 6H-SIC(000-1) C-FACE.JOURNAL OF CRYSTAL GROWTH. VOL. 385. ISSUE . P. 111-114 | 6 | 100% | 0 |
4 | ZHU, F , CHEN, ZM , LI, LB , ZHAO, SF , LIN, T , (2009) SIC BASED SI/SIC HETEROJUNCTION AND ITS RECTIFYING CHARACTERISTICS.CHINESE PHYSICS B. VOL. 18. ISSUE 11. P. 4966 -4969 | 6 | 100% | 11 |
5 | LI, LB , CHEN, ZM , XIE, LF , YANG, C , (2013) TEM CHARACTERIZATION OF SI FILMS GROWN ON 6H-SIC (0001) C-FACE.MATERIALS LETTERS. VOL. 93. ISSUE . P. 330-332 | 5 | 100% | 8 |
6 | LI, LB , CHEN, ZM , ZANG, Y , SONG, LX , HAN, YL , CHU, Q , (2016) EPITAXIAL GROWTH OF SI/SIC HETEROSTRUCTURES WITH DIFFERENT PREFERRED ORIENTATIONS ON 6H-SIC(0001) BY LPCVD.CRYSTENGCOMM. VOL. 18. ISSUE 30. P. 5681 -5685 | 7 | 64% | 1 |
7 | LI, LB , CHEN, ZM , ZANG, Y , FENG, S , (2016) ATOMIC-SCALE CHARACTERIZATION OF SI(110)/6H-SIC(0001) HETEROSTRUCTURE BY HRTEM.MATERIALS LETTERS. VOL. 163. ISSUE . P. 47 -50 | 7 | 58% | 1 |
8 | LI, LB , CHEN, ZM , YANG, Y , LI, J , WANG, N , (2011) DEFECT INVESTIGATIONS OF SICGE EPILAYER GROWN ON 6H-SIC.SURFACE AND INTERFACE ANALYSIS. VOL. 43. ISSUE 5. P. 881 -883 | 6 | 75% | 0 |
9 | FAN, SJ , CHEN, ZM , HE, XM , LI, LB , (2014) FIRST-PRINCIPLES STUDY ON SI(-220)/6H-SIC(0001) INTERFACE.SOLID STATE COMMUNICATIONS. VOL. 177. ISSUE . P. 20-24 | 6 | 67% | 2 |
10 | LI, LB , CHEN, ZM , LIN, T , PU, HB , LI, J , LI, QM , (2008) STRUCTURE ANALYSIS OF SICGE FILMS GROWN ON SIC.SURFACE AND INTERFACE ANALYSIS. VOL. 40. ISSUE 5. P. 935 -938 | 5 | 83% | 11 |
Classes with closest relation at Level 1 |