Class information for:
Level 1: SICGE//SI 6H SIC HETEROJUNCTION//SI 6H SIC

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
37133 66 14.6 71%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
628 3       SILICON CARBIDE//4H SIC//SIC 13252
671 2             SILICON CARBIDE//4H SIC//SIC 13252
37133 1                   SICGE//SI 6H SIC HETEROJUNCTION//SI 6H SIC 66

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 SICGE authKW 2775972 9% 100% 6
2 SI 6H SIC HETEROJUNCTION authKW 1387986 5% 100% 3
3 SI 6H SIC authKW 925324 3% 100% 2
4 SICGE SIC authKW 925324 3% 100% 2
5 3C SI1 XC1 YGEXY authKW 462662 2% 100% 1
6 ADV MAT SEMICONDUCTOR DEVICE TECHNOL address 462662 2% 100% 1
7 EELS HAADF authKW 462662 2% 100% 1
8 ENERGING MAT address 462662 2% 100% 1
9 FAULTED GESI NANOCRYSTALS authKW 462662 2% 100% 1
10 FG WERKSTOFFTECHNOL address 462662 2% 100% 1

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Physics, Applied 349 47% 0% 31
2 Materials Science, Multidisciplinary 123 32% 0% 21
3 Microscopy 111 5% 0% 3
4 Physics, Condensed Matter 79 20% 0% 13
5 Physics, Multidisciplinary 60 15% 0% 10
6 Materials Science, Characterization, Testing 35 3% 0% 2
7 Engineering, Electrical & Electronic 32 15% 0% 10
8 Materials Science, Coatings & Films 21 5% 0% 3
9 Nanoscience & Nanotechnology 15 6% 0% 4
10 Optics 15 8% 0% 5

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 ADV MAT SEMICONDUCTOR DEVICE TECHNOL 462662 2% 100% 1
2 ENERGING MAT 462662 2% 100% 1
3 FG WERKSTOFFTECHNOL 462662 2% 100% 1
4 FWHIM 462662 2% 100% 1
5 OGE STOMATOL 462662 2% 100% 1
6 FG EXPT PHYS 231330 2% 50% 1
7 FIS LICADA CX2 231330 2% 50% 1
8 F ENIUS 154219 2% 33% 1
9 ION BEAM PHYS MAT SCI 115664 2% 25% 1
10 NSF MRSEC TECHNOL ENABLING HETEROSTRUCT MAT 115664 2% 25% 1

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 JOURNAL OF ELECTRON MICROSCOPY 995 3% 0% 2
2 OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 719 3% 0% 2
3 CHINESE PHYSICS 552 3% 0% 2
4 MICROELECTRONICS JOURNAL 480 3% 0% 2
5 JOURNAL OF ELECTRONIC MATERIALS 425 5% 0% 3
6 CHINESE PHYSICS B 421 5% 0% 3
7 MATERIALS LETTERS 325 6% 0% 4
8 SURFACE AND INTERFACE ANALYSIS 274 3% 0% 2
9 CHINESE PHYSICS LETTERS 273 5% 0% 3
10 MATERIALS SCIENCE FORUM 234 5% 0% 3

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 SICGE 2775972 9% 100% 6 Search SICGE Search SICGE
2 SI 6H SIC HETEROJUNCTION 1387986 5% 100% 3 Search SI+6H+SIC+HETEROJUNCTION Search SI+6H+SIC+HETEROJUNCTION
3 SI 6H SIC 925324 3% 100% 2 Search SI+6H+SIC Search SI+6H+SIC
4 SICGE SIC 925324 3% 100% 2 Search SICGE+SIC Search SICGE+SIC
5 3C SI1 XC1 YGEXY 462662 2% 100% 1 Search 3C+SI1+XC1+YGEXY Search 3C+SI1+XC1+YGEXY
6 EELS HAADF 462662 2% 100% 1 Search EELS+HAADF Search EELS+HAADF
7 FAULTED GESI NANOCRYSTALS 462662 2% 100% 1 Search FAULTED+GESI+NANOCRYSTALS Search FAULTED+GESI+NANOCRYSTALS
8 HETERODIODES 462662 2% 100% 1 Search HETERODIODES Search HETERODIODES
9 HETEROEPITAXY SIC 462662 2% 100% 1 Search HETEROEPITAXY+SIC Search HETEROEPITAXY+SIC
10 HETEROSTRUCTURE SEMICONDUCTOR DEVICES 462662 2% 100% 1 Search HETEROSTRUCTURE+SEMICONDUCTOR+DEVICES Search HETEROSTRUCTURE+SEMICONDUCTOR+DEVICES

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 HAN, YL , PU, HB , ZANG, Y , LI, LB , (2016) EPITAXIAL GROWTH OF GE FILM ON 6H-SIC(0001) BY LPCVD.OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS. VOL. 10. ISSUE 9-10. P. 737 -739 7 88% 0
2 PU, HB , CAO, L , CHEN, ZM , REN, J , (2011) OPTICALLY CONTROLLED SICGE/SIC HETEROJUNCTION TRANSISTOR WITH CHARGE-COMPENSATION LAYER.CHINESE PHYSICS B. VOL. 20. ISSUE 5. P. - 8 80% 2
3 LI, LB , CHEN, ZM , XIE, LF , YANG, C , (2014) LATTICE-MATCHING OF SI GROWN ON 6H-SIC(000-1) C-FACE.JOURNAL OF CRYSTAL GROWTH. VOL. 385. ISSUE . P. 111-114 6 100% 0
4 ZHU, F , CHEN, ZM , LI, LB , ZHAO, SF , LIN, T , (2009) SIC BASED SI/SIC HETEROJUNCTION AND ITS RECTIFYING CHARACTERISTICS.CHINESE PHYSICS B. VOL. 18. ISSUE 11. P. 4966 -4969 6 100% 11
5 LI, LB , CHEN, ZM , XIE, LF , YANG, C , (2013) TEM CHARACTERIZATION OF SI FILMS GROWN ON 6H-SIC (0001) C-FACE.MATERIALS LETTERS. VOL. 93. ISSUE . P. 330-332 5 100% 8
6 LI, LB , CHEN, ZM , ZANG, Y , SONG, LX , HAN, YL , CHU, Q , (2016) EPITAXIAL GROWTH OF SI/SIC HETEROSTRUCTURES WITH DIFFERENT PREFERRED ORIENTATIONS ON 6H-SIC(0001) BY LPCVD.CRYSTENGCOMM. VOL. 18. ISSUE 30. P. 5681 -5685 7 64% 1
7 LI, LB , CHEN, ZM , ZANG, Y , FENG, S , (2016) ATOMIC-SCALE CHARACTERIZATION OF SI(110)/6H-SIC(0001) HETEROSTRUCTURE BY HRTEM.MATERIALS LETTERS. VOL. 163. ISSUE . P. 47 -50 7 58% 1
8 LI, LB , CHEN, ZM , YANG, Y , LI, J , WANG, N , (2011) DEFECT INVESTIGATIONS OF SICGE EPILAYER GROWN ON 6H-SIC.SURFACE AND INTERFACE ANALYSIS. VOL. 43. ISSUE 5. P. 881 -883 6 75% 0
9 FAN, SJ , CHEN, ZM , HE, XM , LI, LB , (2014) FIRST-PRINCIPLES STUDY ON SI(-220)/6H-SIC(0001) INTERFACE.SOLID STATE COMMUNICATIONS. VOL. 177. ISSUE . P. 20-24 6 67% 2
10 LI, LB , CHEN, ZM , LIN, T , PU, HB , LI, J , LI, QM , (2008) STRUCTURE ANALYSIS OF SICGE FILMS GROWN ON SIC.SURFACE AND INTERFACE ANALYSIS. VOL. 40. ISSUE 5. P. 935 -938 5 83% 11

Classes with closest relation at Level 1



Rank Class id link
1 15708 SIMA//HEXAGONAL SURFACES//SIC0001
2 15875 SIGEC//SI1 YCY//SI1 X YGEXCY
3 7015 3C SIC//MONOMETHYLSILANE//FG NANOTECHNOL
4 9042 OHMIC CONTACT//4H SIC//EDGE TERMINATION
5 7583 SICF SIC COMPOSITES//SIC SIC COMPOSITE//ADV ENERGY
6 10462 ULTRAVIOLET DETECTORS//PHOTODETECTORS//METAL SEMICONDUCTOR METAL MSM
7 26940 SOURCE GATED TRANSISTOR SGT//SOURCE GATED TRANSISTOR//ELE OMAGNET ELECT DEVICES
8 5987 4H SIC//CHANNEL MOBILITY//SIO2 SIC INTERFACE
9 11381 GE NANOCRYSTALS//GE NANOPARTICLES//IBN SINA FUNDAMENTAL SCI STUDIES
10 2541 MICROPIPE//SUBLIMATION GROWTH//SEMICONDUCTING SILICON COMPOUNDS

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