Class information for:
Level 1: PHYS MEASUREMENT TECHNOL//MATERIALS SCIENCE FORUM//4H SIC

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
2631 2191 18.7 63%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
628 3       SILICON CARBIDE//4H SIC//SIC 13252
671 2             SILICON CARBIDE//4H SIC//SIC 13252
2631 1                   PHYS MEASUREMENT TECHNOL//MATERIALS SCIENCE FORUM//4H SIC 2191

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 PHYS MEASUREMENT TECHNOL address 209685 7% 10% 154
2 MATERIALS SCIENCE FORUM journal 181975 22% 3% 477
3 4H SIC authKW 134550 3% 13% 75
4 SIC authKW 133334 8% 5% 178
5 SEMI INSULATING SIC authKW 125408 1% 75% 12
6 SILICON CARBIDE authKW 123132 9% 4% 201
7 DLTS authKW 116684 3% 11% 75
8 LEHRSTUHL THEOR FESTKORPERPHYS address 111479 0% 100% 8
9 INTRINSIC DEFECTS authKW 102178 1% 24% 31
10 CARBON VACANCY authKW 100322 1% 60% 12

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Condensed Matter 9803 36% 0% 783
2 Materials Science, Characterization, Testing 8767 8% 0% 176
3 Physics, Applied 6329 36% 0% 781
4 Materials Science, Multidisciplinary 5137 35% 0% 771
5 Materials Science, Coatings & Films 3029 9% 0% 194
6 Engineering, Electrical & Electronic 704 13% 0% 282
7 Physics, Multidisciplinary 181 6% 0% 130
8 Nuclear Science & Technology 161 3% 0% 72
9 Instruments & Instrumentation 101 3% 0% 66
10 Optics 67 4% 0% 84

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 PHYS MEASUREMENT TECHNOL 209685 7% 10% 154
2 LEHRSTUHL THEOR FESTKORPERPHYS 111479 0% 100% 8
3 PHYS PHYS ELECT 54377 1% 35% 11
4 INAF ASTROPHYS OBSERV 41805 0% 100% 3
5 LASER ADV MAT PROC 37157 0% 67% 4
6 SEDD 37149 0% 33% 8
7 KNOWLEDGE COMMUNITIES 32391 0% 23% 10
8 LIB INFORMAT MEDIA STUDIES 31803 1% 18% 13
9 UMR 75 88 CNRS 31352 0% 75% 3
10 ADV POWER DEVICES 29025 0% 42% 5

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MATERIALS SCIENCE FORUM 181975 22% 3% 477
2 SOVIET PHYSICS SEMICONDUCTORS-USSR 13579 3% 1% 74
3 SEMICONDUCTORS 12479 4% 1% 78
4 JOURNAL OF APPLIED PHYSICS 7565 11% 0% 244
5 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 6730 3% 1% 60
6 JOURNAL OF ELECTRONIC MATERIALS 5073 3% 1% 60
7 INSTITUTE OF PHYSICS CONFERENCE SERIES 4237 3% 1% 55
8 PHYSICA B-CONDENSED MATTER 3138 4% 0% 85
9 APPLIED PHYSICS LETTERS 2498 7% 0% 146
10 PHYSICAL REVIEW B 2056 8% 0% 165

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 4H SIC 134550 3% 13% 75 Search 4H+SIC Search 4H+SIC
2 SIC 133334 8% 5% 178 Search SIC Search SIC
3 SEMI INSULATING SIC 125408 1% 75% 12 Search SEMI+INSULATING+SIC Search SEMI+INSULATING+SIC
4 SILICON CARBIDE 123132 9% 4% 201 Search SILICON+CARBIDE Search SILICON+CARBIDE
5 DLTS 116684 3% 11% 75 Search DLTS Search DLTS
6 INTRINSIC DEFECTS 102178 1% 24% 31 Search INTRINSIC+DEFECTS Search INTRINSIC+DEFECTS
7 CARBON VACANCY 100322 1% 60% 12 Search CARBON+VACANCY Search CARBON+VACANCY
8 6H SIC 90301 2% 15% 42 Search 6H+SIC Search 6H+SIC
9 SEMI INSULATING 84613 1% 23% 27 Search SEMI+INSULATING Search SEMI+INSULATING
10 TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION 83610 0% 100% 6 Search TEMPERATURE+DEPENDENCE+OF+MAJORITY+CARRIER+CONCENTRATION Search TEMPERATURE+DEPENDENCE+OF+MAJORITY+CARRIER+CONCENTRATION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 KALININA, EV , (2007) THE EFFECT OF IRRADIATION ON THE PROPERTIES OF SIC AND DEVICES BASED ON THIS COMPOUND.SEMICONDUCTORS. VOL. 41. ISSUE 7. P. 745 -783 130 79% 13
2 IWAMOTO, N , SVENSSON, BG , (2015) POINT DEFECTS IN SILICON CARBIDE.DEFECTS IN SEMICONDUCTORS. VOL. 91. ISSUE . P. 369 -407 55 87% 1
3 LEBEDEV, AA , (1999) DEEP LEVEL CENTERS IN SILICON CARBIDE: A REVIEW.SEMICONDUCTORS. VOL. 33. ISSUE 2. P. 107 -130 72 79% 160
4 BOCKSTEDTE, M , GALI, A , MATTAUSCH, A , PANKRATOV, O , STEEDS, JW , (2008) IDENTIFICATION OF INTRINSIC DEFECTS IN SIC: TOWARDS AN UNDERSTANDING OF DEFECT AGGREGATES BY COMBINING THEORETICAL AND EXPERIMENTAL APPROACHES.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 245. ISSUE 7. P. 1281 -1297 50 88% 23
5 SON, NT , ISOYA, J , UMEDA, T , IVANOV, IG , HENRY, A , OHSHIMA, T , JANZEN, E , (2010) EPR AND ENDOR STUDIES OF SHALLOW DONORS IN SIC.APPLIED MAGNETIC RESONANCE. VOL. 39. ISSUE 1-2. P. 49 -85 46 87% 5
6 KLEIN, PB , (2009) IDENTIFICATION AND CARRIER DYNAMICS OF THE DOMINANT LIFETIME LIMITING DEFECT IN N(-) 4H-SIC EPITAXIAL LAYERS.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 206. ISSUE 10. P. 2257-2272 42 89% 10
7 BOCKSTEDTE, M , MATTAUSCH, A , PANKRATOV, O , (2004) AB INITIO STUDY OF THE ANNEALING OF VACANCIES AND INTERSTITIALS IN CUBIC SIC: VACANCY-INTERSTITIAL RECOMBINATION AND AGGREGATION OF CARBON INTERSTITIALS.PHYSICAL REVIEW B. VOL. 69. ISSUE 23. P. - 45 80% 90
8 LEFEVRE, J , COSTANTINI, JM , GOURIER, D , ESNOUF, S , PETITE, G , (2011) CHARACTERIZATION OF A SILICON-RELATED DEFECT DETECTED BY ITS EXCITED TRIPLET STATE IN ELECTRON-IRRADIATED 3C-SIC.PHYSICAL REVIEW B. VOL. 83. ISSUE 7. P. - 34 87% 6
9 ZHU, CY , LING, CC , BRAUER, G , ANWAND, W , SKORUPA, W , (2008) VACANCY-TYPE DEFECTS IN 6H-SILICON CARBIDE INDUCED BY HE-IMPLANTATION: A POSITRON ANNIHILATION SPECTROSCOPY APPROACH.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 41. ISSUE 19. P. - 34 92% 3
10 ISOYA, J , UMEDA, T , MIZUOCHI, N , SON, NT , JANZEN, E , OHSHIMA, T , (2008) EPR IDENTIFICATION OF INTRINSIC DEFECTS IN SIC.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 245. ISSUE 7. P. 1298 -1314 36 78% 28

Classes with closest relation at Level 1


Rank Class id link
1 2541 MICROPIPE//SUBLIMATION GROWTH//SEMICONDUCTING SILICON COMPOUNDS
2 9042 OHMIC CONTACT//4H SIC//EDGE TERMINATION
3 5987 4H SIC//CHANNEL MOBILITY//SIO2 SIC INTERFACE
4 7583 SICF SIC COMPOSITES//SIC SIC COMPOSITE//ADV ENERGY
5 24234 MESFET//4H SIC MESFET//SIC MESFET
6 16271 GAAS DETECTORS//GRADED GAP ALXGA1 XAS STRUCTURES//SCI PROD STATE ENTERPRISE
7 7015 3C SIC//MONOMETHYLSILANE//FG NANOTECHNOL
8 32367 ADV DEVICE TECHNLOL//BANDGAP CORRECTION//BREMEN COMP MATER SCI
9 34783 PHASE BOUNDARY REGION//QUANTUM WELL LASER STRUCTURES//INVEST DISPOSITIVOS SEMICONDUCTO
10 37433 3D SIMULATION OF LIGHT PROPAGATION//LASHKARYOV INSITUTE SEMICOND PHYS//LNOFS

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