Class information for:
Level 1: 3C SIC//MONOMETHYLSILANE//FG NANOTECHNOL

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
7015 1415 19.1 68%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
628 3       SILICON CARBIDE//4H SIC//SIC 13252
671 2             SILICON CARBIDE//4H SIC//SIC 13252
7015 1                   3C SIC//MONOMETHYLSILANE//FG NANOTECHNOL 1415

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 3C SIC authKW 1183989 8% 48% 115
2 MONOMETHYLSILANE authKW 308247 1% 71% 20
3 FG NANOTECHNOL address 269711 1% 63% 20
4 POLY SIC authKW 196163 1% 91% 10
5 HOLLOW VOID authKW 172625 1% 100% 8
6 SILICON CARBIDE authKW 154747 13% 4% 181
7 3C SIC FILM authKW 153442 1% 89% 8
8 POLY 3C SIC authKW 153442 1% 89% 8
9 ZENTRUM MIKRO NANOTECHNOL address 146266 1% 34% 20
10 FT2M address 145648 1% 75% 9

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Materials Science, Coatings & Films 11370 21% 0% 292
2 Physics, Applied 8088 49% 0% 689
3 Materials Science, Multidisciplinary 5112 43% 0% 604
4 Physics, Condensed Matter 3112 26% 0% 365
5 Materials Science, Characterization, Testing 998 3% 0% 49
6 Crystallography 712 7% 0% 94
7 Engineering, Electrical & Electronic 507 13% 0% 190
8 Electrochemistry 259 4% 0% 60
9 Nanoscience & Nanotechnology 189 5% 0% 69
10 Physics, Multidisciplinary 172 7% 0% 96

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 FG NANOTECHNOL 269711 1% 63% 20
2 ZENTRUM MIKRO NANOTECHNOL 146266 1% 34% 20
3 FT2M 145648 1% 75% 9
4 FESTKORPERELEKTR 76713 1% 44% 8
5 ETUD SEMICOND GRP 65314 3% 8% 40
6 MICROSENSOR ACTUATOR TECHNOL 59748 0% 46% 6
7 QUAL EVALUAT CHEM ANAL 57539 0% 67% 4
8 MICROFABRICAT 51624 1% 16% 15
9 NOVASIC 50340 0% 33% 7
10 CNRS UPR10 48549 0% 75% 3

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MATERIALS SCIENCE FORUM 32750 12% 1% 163
2 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 6692 3% 1% 48
3 INSTITUTE OF PHYSICS CONFERENCE SERIES 5463 4% 1% 50
4 JOURNAL OF CRYSTAL GROWTH 4340 6% 0% 80
5 THIN SOLID FILMS 3706 6% 0% 80
6 DIAMOND AND RELATED MATERIALS 2642 2% 0% 30
7 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 2092 4% 0% 55
8 APPLIED PHYSICS LETTERS 1603 7% 0% 94
9 JOURNAL OF APPLIED PHYSICS 1313 6% 0% 84
10 APPLIED SURFACE SCIENCE 1286 3% 0% 47

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 3C SIC 1183989 8% 48% 115 Search 3C+SIC Search 3C+SIC
2 MONOMETHYLSILANE 308247 1% 71% 20 Search MONOMETHYLSILANE Search MONOMETHYLSILANE
3 POLY SIC 196163 1% 91% 10 Search POLY+SIC Search POLY+SIC
4 HOLLOW VOID 172625 1% 100% 8 Search HOLLOW+VOID Search HOLLOW+VOID
5 SILICON CARBIDE 154747 13% 4% 181 Search SILICON+CARBIDE Search SILICON+CARBIDE
6 3C SIC FILM 153442 1% 89% 8 Search 3C+SIC+FILM Search 3C+SIC+FILM
7 POLY 3C SIC 153442 1% 89% 8 Search POLY+3C+SIC Search POLY+3C+SIC
8 3C SIC HETEROEPITAXY 110971 0% 86% 6 Search 3C+SIC+HETEROEPITAXY Search 3C+SIC+HETEROEPITAXY
9 HETEROEPITAXY 109387 4% 9% 59 Search HETEROEPITAXY Search HETEROEPITAXY
10 HYDROGEN PLASMA SPUTTERING 106224 1% 62% 8 Search HYDROGEN+PLASMA+SPUTTERING Search HYDROGEN+PLASMA+SPUTTERING

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 FERRO, G , (2015) 3C-SIC HETEROEPITAXIAL GROWTH ON SILICON: THE QUEST FOR HOLY GRAIL.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 40. ISSUE 1. P. 56 -76 80 72% 8
2 MEHREGANY, M , ZORMAN, CA , ROY, S , FLEISCHMAN, AJ , WU, CH , RAJAN, N , (2000) SILICON CARBIDE FOR MICROELECTROMECHANICAL SYSTEMS.INTERNATIONAL MATERIALS REVIEWS. VOL. 45. ISSUE 3. P. 85 -108 56 54% 85
3 ZORMAN, CA , PARRO, RJ , (2008) MICRO- AND NANOMECHANICAL STRUCTURES FOR SILICON CARBIDE MEMS AND NEMS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 245. ISSUE 7. P. 1404 -1424 55 42% 46
4 LA VIA, F , D'ARRIGO, G , SEVERINO, A , PILUSO, N , MAUCERI, M , LOCKE, C , SADDOW, SE , (2013) PATTERNED SUBSTRATE WITH INVERTED SILICON PYRAMIDS FOR 3C-SIC EPITAXIAL GROWTH: A COMPARISON WITH CONVENTIONAL (001) SI SUBSTRATE.JOURNAL OF MATERIALS RESEARCH. VOL. 28. ISSUE 1. P. 94 -103 25 89% 1
5 YOSHIMURA, S , SUGIMOTO, S , MURAI, K , KIUCHI, M , (2016) LOW-ENERGY SIC2H6+ AND SIC3H9+ ION BEAM PRODUCTIONS BY THE MASS-SELECTION OF FRAGMENTS PRODUCED FROM HEXAMETHYLDISILANE FOR SIC FILM FORMATIONS.AIP ADVANCES. VOL. 6. ISSUE 12. P. - 27 77% 0
6 MABOUDIAN, R , CARRARO, C , SENESKY, DG , ROPER, CS , (2013) ADVANCES IN SILICON CARBIDE SCIENCE AND TECHNOLOGY AT THE MICRO- AND NANOSCALES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 31. ISSUE 5. P. - 63 28% 30
7 PEZOLDT, J , KULIKOV, DV , KHARLAMOV, VS , LUBOV, MN , TRUSHIN, YV , (2012) MULTI-SCALE SIMULATION OF NUCLEATION AND GROWTH OF NANOSCALE SIC ON SI.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. VOL. 9. ISSUE 11. P. 1941 -1966 44 44% 1
8 DAVIS, RF , KELNER, G , SHUR, M , PALMOUR, JW , EDMOND, JA , (1991) THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE.PROCEEDINGS OF THE IEEE. VOL. 79. ISSUE 5. P. 677 -701 43 58% 360
9 KHAZAKA, R , MICHAUD, JF , VENNEGUES, P , NGUYEN, L , ALQUIER, D , PORTAIL, M , (2016) ON THE INTERPLAY BETWEEN SI(110) EPILAYER ATOMIC ROUGHNESS AND SUBSEQUENT 3C-SIC GROWTH DIRECTION.JOURNAL OF APPLIED PHYSICS. VOL. 120. ISSUE 18. P. - 22 79% 0
10 FU, XA , TREVINO, J , MEHREGANY, M , ZORMAN, CA , (2014) DOPED POLYCRYSTALLINE 3C-SIC FILMS WITH LOW STRESS FOR MEMS: PART I. DEPOSITION CONDITIONS AND FILM PROPERTIES.JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 24. ISSUE 3. P. - 23 77% 1

Classes with closest relation at Level 1


Rank Class id link
1 23247 METHYLTRICHLOROSILANE//HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION//ADV FIB COMPOSIT
2 26620 ELECTRON BEAM ANNEALING//RAFTER//ION BEAM SYNTHESIS
3 37133 SICGE//SI 6H SIC HETEROJUNCTION//SI 6H SIC
4 15708 SIMA//HEXAGONAL SURFACES//SIC0001
5 5652 AMORPHOUS SILICON CARBIDE//SILICON CARBON ALLOYS//A SIC H
6 2541 MICROPIPE//SUBLIMATION GROWTH//SEMICONDUCTING SILICON COMPOUNDS
7 34875 INDIUM OXIDE CERAMICS//DILATATION CENTERS//ELASTIC ENERGY RELAXATION
8 15875 SIGEC//SI1 YCY//SI1 X YGEXCY
9 5987 4H SIC//CHANNEL MOBILITY//SIO2 SIC INTERFACE
10 2631 PHYS MEASUREMENT TECHNOL//MATERIALS SCIENCE FORUM//4H SIC

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