Class information for:
Level 1: MESFET//4H SIC MESFET//SIC MESFET

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
24234 319 13.9 58%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
628 3       SILICON CARBIDE//4H SIC//SIC 13252
671 2             SILICON CARBIDE//4H SIC//SIC 13252
24234 1                   MESFET//4H SIC MESFET//SIC MESFET 319

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MESFET authKW 2510360 34% 24% 109
2 4H SIC MESFET authKW 1536861 5% 94% 17
3 SIC MESFET authKW 1042296 4% 78% 14
4 SOI MESFET authKW 478608 2% 100% 5
5 MAXIMUM OUTPUT POWER DENSITY authKW 398838 2% 83% 5
6 METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR authKW 367640 4% 30% 13
7 DC TRANSCONDUCTANCE authKW 306307 1% 80% 4
8 DRAIN SATURATION CURRENT authKW 306307 1% 80% 4
9 L GATE authKW 287165 1% 100% 3
10 DRAIN INDUCED BARRIER LOWERING EFFECT authKW 215372 1% 75% 3

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 3414 60% 0% 191
2 Physics, Applied 1345 42% 0% 135
3 Physics, Condensed Matter 876 29% 0% 91
4 Materials Science, Characterization, Testing 486 5% 0% 16
5 Materials Science, Multidisciplinary 427 28% 0% 88
6 Materials Science, Coatings & Films 210 6% 0% 20
7 Nanoscience & Nanotechnology 205 9% 0% 30
8 Physics, Multidisciplinary 100 10% 0% 31
9 Optics 15 4% 0% 14
10 Telecommunications 11 2% 0% 7

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 EDUC MINIST WIDE BAND G SEMICOND MAT 191443 1% 100% 2
2 COMMUN NXP CRISMATLAMIPSUMR 6508 95722 0% 100% 1
3 ENGN TECHNOL EAST GUILAN 95722 0% 100% 1
4 MICROELECT FAILURE ANAL 95722 0% 100% 1
5 MOTILIAL NEHRU 95722 0% 100% 1
6 PHYS COMOPOSANTS SEMICOND 95722 0% 100% 1
7 PROGRAM MICROSCI TECHNOL 95722 0% 100% 1
8 RADIO CIME 95722 0% 100% 1
9 URA 837 95722 0% 100% 1
10 WIDE BAND G SEMICOND MAT DEVICES 373 95722 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MATERIALS SCIENCE FORUM 12104 15% 0% 47
2 SOLID-STATE ELECTRONICS 9937 10% 0% 32
3 IEEE TRANSACTIONS ON ELECTRON DEVICES 7704 11% 0% 35
4 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 5685 4% 0% 14
5 SUPERLATTICES AND MICROSTRUCTURES 4336 5% 0% 17
6 IEEE ELECTRON DEVICE LETTERS 2703 5% 0% 16
7 JOURNAL OF COMPUTATIONAL ELECTRONICS 2282 2% 0% 5
8 CHINESE PHYSICS B 1390 4% 0% 12
9 RECHERCHE AEROSPATIALE 988 1% 1% 2
10 MICROELECTRONICS JOURNAL 616 2% 0% 5

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 MESFET 2510360 34% 24% 109 Search MESFET Search MESFET
2 4H SIC MESFET 1536861 5% 94% 17 Search 4H+SIC+MESFET Search 4H+SIC+MESFET
3 SIC MESFET 1042296 4% 78% 14 Search SIC+MESFET Search SIC+MESFET
4 SOI MESFET 478608 2% 100% 5 Search SOI+MESFET Search SOI+MESFET
5 MAXIMUM OUTPUT POWER DENSITY 398838 2% 83% 5 Search MAXIMUM+OUTPUT+POWER+DENSITY Search MAXIMUM+OUTPUT+POWER+DENSITY
6 METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR 367640 4% 30% 13 Search METAL+SEMICONDUCTOR+FIELD+EFFECT+TRANSISTOR Search METAL+SEMICONDUCTOR+FIELD+EFFECT+TRANSISTOR
7 DC TRANSCONDUCTANCE 306307 1% 80% 4 Search DC+TRANSCONDUCTANCE Search DC+TRANSCONDUCTANCE
8 DRAIN SATURATION CURRENT 306307 1% 80% 4 Search DRAIN+SATURATION+CURRENT Search DRAIN+SATURATION+CURRENT
9 L GATE 287165 1% 100% 3 Search L+GATE Search L+GATE
10 DRAIN INDUCED BARRIER LOWERING EFFECT 215372 1% 75% 3 Search DRAIN+INDUCED+BARRIER+LOWERING+EFFECT Search DRAIN+INDUCED+BARRIER+LOWERING+EFFECT

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 OROUJI, AA , ROUSTAIE, Z , RAMEZANI, Z , (2016) NOVEL 4H-SIC MESFET WITH MODIFIED DEPLETION REGION BY DUAL WELL FOR HIGH-CURRENT APPLICATIONS.JOURNAL OF COMPUTATIONAL ELECTRONICS. VOL. 15. ISSUE 3. P. 1077 -1084 16 89% 0
2 SONG, K , CHAI, CC , YANG, YT , CHEN, B , ZHANG, XJ , MA, ZY , (2012) EFFECTS OF GATE-BUFFER COMBINED WITH A P-TYPE SPACER STRUCTURE ON SILICON CARBIDE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS.CHINESE PHYSICS B. VOL. 21. ISSUE 1. P. - 19 73% 0
3 NOORBAKHSH, SM , ELAHIPANAH, H , (2012) IMPROVED 4H-SIC MESFET WITH DOUBLE SOURCE FIELD PLATE STRUCTURES.SUPERLATTICES AND MICROSTRUCTURES. VOL. 51. ISSUE 5. P. 553 -562 15 88% 5
4 JIA, HJ , LUO, YH , ZHANG, H , XING, D , MA, PM , (2017) A NOVEL 4H-SIC MESFET WITH SERPENTINE CHANNEL FOR HIGH POWER AND HIGH FREQUENCY APPLICATIONS.SUPERLATTICES AND MICROSTRUCTURES. VOL. 101. ISSUE . P. 315 -322 13 93% 0
5 RAZAVI, SM , ZAHIRI, SH , HOSSEINI, SE , (2013) A NOVEL 4H-SIC MESFET WITH RECESSED GATE AND CHANNEL.SUPERLATTICES AND MICROSTRUCTURES. VOL. 60. ISSUE . P. 516-523 15 79% 11
6 OROUJI, AA , RAMEZANI, Z , HEYDARI, AA , (2014) A NOVEL HIGH-PERFORMANCE SOI MESFET BY STOPPING THE DEPLETION REGION EXTENSION.SUPERLATTICES AND MICROSTRUCTURES. VOL. 75. ISSUE . P. 195 -207 15 75% 0
7 RAMEZANI, Z , OROUJI, AA , AGHAREZAEI, H , (2016) A NOVEL SYMMETRICAL 4H-SIC MESFET: AN EFFECTIVE WAY TO IMPROVE THE BREAKDOWN VOLTAGE.JOURNAL OF COMPUTATIONAL ELECTRONICS. VOL. 15. ISSUE 1. P. 163 -171 13 76% 1
8 OROUJI, AA , KHAYATIAN, A , KESHAVARZI, P , (2016) A NOVEL HIGH-PERFORMANCE HIGH-FREQUENCY SOI MESFET BY THE DAMPED ELECTRIC FIELD.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. VOL. 80. ISSUE . P. 8 -13 11 92% 0
9 JIA, HJ , ZHANG, H , LUO, YH , YANG, ZH , (2015) IMPROVED MULTI-RECESSED 4H-SIC MESFETS WITH DOUBLE-RECESSED P-BUFFER LAYER.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 40. ISSUE . P. 650 -654 11 92% 0
10 DENG, XC , SUN, H , RAO, CY , ZHANG, B , (2013) HIGH-POWER SIC MESFET USING A DUAL P-BUFFER LAYER FOR AN S-BAND POWER AMPLIFIER.CHINESE PHYSICS B. VOL. 22. ISSUE 1. P. - 10 100% 2

Classes with closest relation at Level 1


Rank Class id link
1 9042 OHMIC CONTACT//4H SIC//EDGE TERMINATION
2 19691 FLUCTUAT//ELLIPSOIDAL VALLEYS//HOT PHONONS
3 5987 4H SIC//CHANNEL MOBILITY//SIO2 SIC INTERFACE
4 2631 PHYS MEASUREMENT TECHNOL//MATERIALS SCIENCE FORUM//4H SIC
5 5693 LARGE SIGNAL MODEL//NONLINEAR MEASUREMENTS//IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
6 17203 GAAS MESFET//GATE LAG//DRAIN CURRENT TRANSIENT
7 18696 HETEROJUNCTION PHOTOTRANSISTOR//PHOTOTRANSISTOR//OPFET
8 37354 SI TASI2//SI TASI2 EUTECTIC IN SITU COMPOSITE//ELECTRON BEAM FLOATING ZONE MELTING
9 4515 LDMOS//SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE
10 23350 EPITAXIAL AL2O3//AL2O3 ON SI//DENVER AEROSP TECH OPERAT

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