Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
2541 | 2213 | 18.0 | 69% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
628 | 3 | SILICON CARBIDE//4H SIC//SIC | 13252 |
671 | 2 | SILICON CARBIDE//4H SIC//SIC | 13252 |
2541 | 1 | MICROPIPE//SUBLIMATION GROWTH//SEMICONDUCTING SILICON COMPOUNDS | 2213 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | MICROPIPE | authKW | 1051548 | 4% | 78% | 98 |
2 | SUBLIMATION GROWTH | authKW | 533573 | 3% | 66% | 59 |
3 | SEMICONDUCTING SILICON COMPOUNDS | authKW | 393393 | 3% | 39% | 74 |
4 | 4H SIC | authKW | 364295 | 6% | 21% | 124 |
5 | PHYSICAL VAPOR TRANSPORT | authKW | 256036 | 2% | 53% | 35 |
6 | GROWTH FROM VAPOR | authKW | 236424 | 4% | 22% | 79 |
7 | SEMICONDUCTING SILICON CARBIDE | authKW | 216537 | 1% | 83% | 19 |
8 | MATERIALS SCIENCE FORUM | journal | 214195 | 23% | 3% | 520 |
9 | SIC BULK GROWTH | authKW | 209847 | 1% | 89% | 17 |
10 | BASAL PLANE DISLOCATION | authKW | 207755 | 1% | 94% | 16 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Multidisciplinary | 14536 | 56% | 0% | 1242 |
2 | Physics, Applied | 10598 | 45% | 0% | 993 |
3 | Materials Science, Characterization, Testing | 10033 | 9% | 0% | 189 |
4 | Crystallography | 9872 | 18% | 0% | 407 |
5 | Materials Science, Coatings & Films | 4097 | 10% | 0% | 225 |
6 | Physics, Condensed Matter | 2811 | 20% | 0% | 447 |
7 | Engineering, Electrical & Electronic | 454 | 11% | 0% | 241 |
8 | Physics, Multidisciplinary | 125 | 5% | 0% | 116 |
9 | Optics | 80 | 4% | 0% | 89 |
10 | Metallurgy & Metallurgical Engineering | 74 | 3% | 0% | 65 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MAT SCI 6 | 163274 | 2% | 28% | 42 |
2 | PHYS MEASUREMENT TECHNOL | 147893 | 6% | 8% | 130 |
3 | UMR 5614LTPCM | 91969 | 0% | 67% | 10 |
4 | ADV POWER DEVICE | 89664 | 1% | 50% | 13 |
5 | MAT 6 | 75869 | 0% | 50% | 11 |
6 | RD ASSOC FUTURE ELE ON DEVICES | 75206 | 1% | 32% | 17 |
7 | LMGP | 53630 | 2% | 11% | 36 |
8 | MULTIMAT INTER ES | 49501 | 2% | 7% | 48 |
9 | UPR ULTRA LOW LOSS POWER DEVICE TECHNOL BODY | 45146 | 0% | 55% | 6 |
10 | ETUD SEMICOND GRP | 43848 | 2% | 8% | 41 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MATERIALS SCIENCE FORUM | 214195 | 23% | 3% | 520 |
2 | JOURNAL OF CRYSTAL GROWTH | 45676 | 15% | 1% | 321 |
3 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 11305 | 4% | 1% | 78 |
4 | JOURNAL OF ELECTRONIC MATERIALS | 5366 | 3% | 1% | 62 |
5 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 4194 | 2% | 1% | 55 |
6 | SEMICONDUCTORS | 2893 | 2% | 1% | 38 |
7 | JOURNAL OF APPLIED PHYSICS | 1848 | 6% | 0% | 125 |
8 | DIAMOND AND RELATED MATERIALS | 1783 | 1% | 0% | 31 |
9 | CHEMICAL VAPOR DEPOSITION | 1658 | 0% | 1% | 11 |
10 | APPLIED PHYSICS LETTERS | 1487 | 5% | 0% | 115 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | MICROPIPE | 1051548 | 4% | 78% | 98 | Search MICROPIPE | Search MICROPIPE |
2 | SUBLIMATION GROWTH | 533573 | 3% | 66% | 59 | Search SUBLIMATION+GROWTH | Search SUBLIMATION+GROWTH |
3 | SEMICONDUCTING SILICON COMPOUNDS | 393393 | 3% | 39% | 74 | Search SEMICONDUCTING+SILICON+COMPOUNDS | Search SEMICONDUCTING+SILICON+COMPOUNDS |
4 | 4H SIC | 364295 | 6% | 21% | 124 | Search 4H+SIC | Search 4H+SIC |
5 | PHYSICAL VAPOR TRANSPORT | 256036 | 2% | 53% | 35 | Search PHYSICAL+VAPOR+TRANSPORT | Search PHYSICAL+VAPOR+TRANSPORT |
6 | GROWTH FROM VAPOR | 236424 | 4% | 22% | 79 | Search GROWTH+FROM+VAPOR | Search GROWTH+FROM+VAPOR |
7 | SEMICONDUCTING SILICON CARBIDE | 216537 | 1% | 83% | 19 | Search SEMICONDUCTING+SILICON+CARBIDE | Search SEMICONDUCTING+SILICON+CARBIDE |
8 | SIC BULK GROWTH | 209847 | 1% | 89% | 17 | Search SIC+BULK+GROWTH | Search SIC+BULK+GROWTH |
9 | BASAL PLANE DISLOCATION | 207755 | 1% | 94% | 16 | Search BASAL+PLANE+DISLOCATION | Search BASAL+PLANE+DISLOCATION |
10 | SILICON CARBIDE | 188706 | 11% | 5% | 250 | Search SILICON+CARBIDE | Search SILICON+CARBIDE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | KIMOTO, T , (2016) BULK AND EPITAXIAL GROWTH OF SILICON CARBIDE.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 62. ISSUE 2. P. 329 -351 | 124 | 77% | 1 |
2 | SKOWRONSKI, M , HA, S , (2006) DEGRADATION OF HEXAGONAL SILICON-CARBIDE-BASED BIPOLAR DEVICES.JOURNAL OF APPLIED PHYSICS. VOL. 99. ISSUE 1. P. - | 92 | 74% | 182 |
3 | LA VIA, F , CAMARDA, M , LA MAGNA, A , (2014) MECHANISMS OF GROWTH AND DEFECT PROPERTIES OF EPITAXIAL SIC.APPLIED PHYSICS REVIEWS. VOL. 1. ISSUE 3. P. - | 92 | 65% | 6 |
4 | PEDERSEN, H , LEONE, S , KORDINA, O , HENRY, A , NISHIZAWA, S , KOSHKA, Y , JANZEN, E , (2012) CHLORIDE-BASED CVD GROWTH OF SILICON CARBIDE FOR ELECTRONIC APPLICATIONS.CHEMICAL REVIEWS. VOL. 112. ISSUE 4. P. 2434 -2453 | 87 | 65% | 28 |
5 | CHAUSSENDE, D , WELLMANN, PJ , PONS, M , (2007) STATUS OF SIC BULK GROWTH PROCESSES.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 40. ISSUE 20. P. 6150 -6158 | 60 | 92% | 14 |
6 | AVROV, DD , LEBEDEV, AO , TAIROV, YM , (2016) POLYTYPE INCLUSIONS AND POLYTYPE STABILITY IN SILICON-CARBIDE CRYSTALS.SEMICONDUCTORS. VOL. 50. ISSUE 4. P. 494 -501 | 47 | 92% | 0 |
7 | CALDWELL, JD , STAHLBUSH, RE , MAHADIK, NA , (2012) MITIGATING DEFECTS WITHIN SILICON CARBIDE EPITAXY.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 159. ISSUE 3. P. R46 -R51 | 50 | 89% | 5 |
8 | WAGNER, G , SCHULZ, D , SICHE, D , (2003) VAPOUR PHASE GROWTH OF EPITAXIAL SILICON CARBIDE LAYERS.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 47. ISSUE 2-3. P. 139 -165 | 62 | 90% | 19 |
9 | WELLMANN, P , NEUBAUER, G , FAHLBUSCH, L , SALAMON, M , UHLMANN, N , (2015) GROWTH OF SIC BULK CRYSTALS FOR APPLICATION IN POWER ELECTRONIC DEVICES - PROCESS DESIGN, 2D AND 3D X-RAY IN SITU VISUALIZATION AND ADVANCED DOPING.CRYSTAL RESEARCH AND TECHNOLOGY. VOL. 50. ISSUE 1. P. 2 -9 | 41 | 98% | 1 |
10 | TSUCHIDA, H , ITO, M , KAMATA, I , NAGANO, M , (2009) FORMATION OF EXTENDED DEFECTS IN 4H-SIC EPITAXIAL GROWTH AND DEVELOPMENT OF A FAST GROWTH TECHNIQUE.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 246. ISSUE 7. P. 1553 -1568 | 41 | 100% | 48 |
Classes with closest relation at Level 1 |