Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
15708 | 697 | 26.5 | 80% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
628 | 3 | SILICON CARBIDE//4H SIC//SIC | 13252 |
671 | 2 | SILICON CARBIDE//4H SIC//SIC | 13252 |
15708 | 1 | SIMA//HEXAGONAL SURFACES//SIC0001 | 697 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SIMA | address | 398236 | 3% | 45% | 20 |
2 | HEXAGONAL SURFACES | authKW | 306659 | 1% | 100% | 7 |
3 | SIC0001 | authKW | 233639 | 1% | 67% | 8 |
4 | SILICON CARBIDE | authKW | 196265 | 21% | 3% | 143 |
5 | DSMDRECAMSPCSI | address | 190460 | 1% | 43% | 10 |
6 | BETA SIC100 SURFACE | authKW | 131425 | 0% | 100% | 3 |
7 | SIC SURFACES | authKW | 131425 | 0% | 100% | 3 |
8 | SILICON CARBIDE SURFACES | authKW | 131425 | 0% | 100% | 3 |
9 | LEHRSTUHL FESTKORPERPHYS | address | 100282 | 3% | 10% | 23 |
10 | 4H SIC0001 | authKW | 87617 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 6501 | 51% | 0% | 352 |
2 | Materials Science, Coatings & Films | 3046 | 15% | 0% | 107 |
3 | Physics, Applied | 1381 | 30% | 0% | 210 |
4 | Chemistry, Physical | 1086 | 28% | 0% | 195 |
5 | Materials Science, Multidisciplinary | 592 | 23% | 0% | 159 |
6 | Materials Science, Characterization, Testing | 405 | 3% | 0% | 22 |
7 | Physics, Multidisciplinary | 161 | 9% | 0% | 60 |
8 | Nanoscience & Nanotechnology | 36 | 3% | 0% | 24 |
9 | Engineering, Electrical & Electronic | 8 | 5% | 0% | 34 |
10 | Crystallography | 5 | 1% | 0% | 10 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SIMA | 398236 | 3% | 45% | 20 |
2 | DSMDRECAMSPCSI | 190460 | 1% | 43% | 10 |
3 | LEHRSTUHL FESTKORPERPHYS | 100282 | 3% | 10% | 23 |
4 | CEA SNECMAUMR 5801 | 87617 | 0% | 100% | 2 |
5 | DMEL LETI CEA TECHNOL AVANCEES | 87617 | 0% | 100% | 2 |
6 | UMR 7014 | 87605 | 1% | 25% | 8 |
7 | THEORET PHYS FESTKORPERPHYS 2 | 85854 | 1% | 28% | 7 |
8 | SPCSISIMA | 77877 | 1% | 44% | 4 |
9 | DRECAMSRSIM | 73007 | 1% | 33% | 5 |
10 | SIMA ASSOCIE | 58410 | 0% | 67% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SURFACE SCIENCE | 19291 | 16% | 0% | 109 |
2 | MATERIALS SCIENCE FORUM | 16015 | 11% | 0% | 80 |
3 | SURFACE REVIEW AND LETTERS | 2385 | 2% | 0% | 12 |
4 | APPLIED SURFACE SCIENCE | 2256 | 6% | 0% | 43 |
5 | PHYSICAL REVIEW B | 2141 | 13% | 0% | 92 |
6 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 985 | 2% | 0% | 13 |
7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 974 | 3% | 0% | 18 |
8 | APPLIED PHYSICS LETTERS | 928 | 7% | 0% | 50 |
9 | DIAMOND AND RELATED MATERIALS | 590 | 1% | 0% | 10 |
10 | JOURNAL OF PHYSICS-CONDENSED MATTER | 537 | 3% | 0% | 20 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HEXAGONAL SURFACES | 306659 | 1% | 100% | 7 | Search HEXAGONAL+SURFACES | Search HEXAGONAL+SURFACES |
2 | SIC0001 | 233639 | 1% | 67% | 8 | Search SIC0001 | Search SIC0001 |
3 | SILICON CARBIDE | 196265 | 21% | 3% | 143 | Search SILICON+CARBIDE | Search SILICON+CARBIDE |
4 | BETA SIC100 SURFACE | 131425 | 0% | 100% | 3 | Search BETA+SIC100+SURFACE | Search BETA+SIC100+SURFACE |
5 | SIC SURFACES | 131425 | 0% | 100% | 3 | Search SIC+SURFACES | Search SIC+SURFACES |
6 | SILICON CARBIDE SURFACES | 131425 | 0% | 100% | 3 | Search SILICON+CARBIDE+SURFACES | Search SILICON+CARBIDE+SURFACES |
7 | 4H SIC0001 | 87617 | 0% | 100% | 2 | Search 4H+SIC0001 | Search 4H+SIC0001 |
8 | A PLANES | 87617 | 0% | 100% | 2 | Search A+PLANES | Search A+PLANES |
9 | ALPHA SIC0001 | 87617 | 0% | 100% | 2 | Search ALPHA+SIC0001 | Search ALPHA+SIC0001 |
10 | C RICH RECONSTRUCTED SURFACE | 87617 | 0% | 100% | 2 | Search C+RICH+RECONSTRUCTED+SURFACE | Search C+RICH+RECONSTRUCTED+SURFACE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | POLLMANN, J , KRUGER, P , (2004) RECONSTRUCTION MODELS OF CUBIC SIC SURFACES.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 16. ISSUE 17. P. S1659 -S1703 | 83 | 76% | 33 |
2 | ARISTOV, VY , (2001) BETA-SIC(100) SURFACE: ATOMIC STRUCTURES AND ELECTRONIC PROPERTIES.PHYSICS-USPEKHI. VOL. 44. ISSUE 8. P. 761 -783 | 62 | 82% | 10 |
3 | SOUKIASSIAN, PG , ENRIQUEZ, HB , (2004) ATOMIC SCALE CONTROL AND UNDERSTANDING OF CUBIC SILICON CARBIDE SURFACE RECONSTRUCTIONS, NANOSTRUCTURES AND NANOCHEMISTRY.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 16. ISSUE 17. P. S1611 -S1658 | 52 | 74% | 35 |
4 | WIMMER, E , CELASCO, E , VATTUONE, L , SAVIO, L , TEJEDA, A , SILLY, M , D'ANGELO, M , SIROTTI, F , ROCCA, M , CATELLANI, A , ET AL (2016) COMMENT ON "ADSORPTION OF HYDROGEN AND HYDROCARBON MOLECULES ON SIC(001)" BY POLLMANN ET AL. (SURF. SCI. REP. 69 (2014) 55-104).SURFACE SCIENCE. VOL. 644. ISSUE . P. L170 -L171 | 27 | 100% | 1 |
5 | SEYLLER, T , (2004) PASSIVATION OF HEXAGONAL SIC SURFACES BY HYDROGEN TERMINATION.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 16. ISSUE 17. P. S1755-S1782 | 44 | 79% | 56 |
6 | CATELLANI, A , GALLI, G , (2002) THEORETICAL STUDIES OF SILICON CARBIDE SURFACES.PROGRESS IN SURFACE SCIENCE. VOL. 69. ISSUE 4-6. P. 101 -124 | 61 | 54% | 27 |
7 | SIEBER, N , SEYLLER, T , LEY, L , JAMES, D , RILEY, JD , LECKEY, RCG , POLCIK, M , (2003) SYNCHROTRON X-RAY PHOTOELECTRON SPECTROSCOPY STUDY OF HYDROGEN-TERMINATED 6H-SIC{0001} SURFACES.PHYSICAL REVIEW B. VOL. 67. ISSUE 20. P. - | 40 | 78% | 29 |
8 | DIANI, M , DIOURI, J , KUBLER, L , SIMON, L , AUBEL, D , BOLMONT, D , (2003) 6H-AND 4H-SIC(0001) SI SURFACE RICHNESS DOSING BY HYDROGEN ETCHING: A WAY TO REDUCE THE FORMATION TEMPERATURE OF RECONSTRUCTIONS.SURFACE REVIEW AND LETTERS. VOL. 10. ISSUE 1. P. 55-63 | 32 | 100% | 5 |
9 | BERMUDEZ, VM , (1997) STRUCTURE AND PROPERTIES OF CUBIC SILICON CARBIDE (100) SURFACES: A REVIEW.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 202. ISSUE 1. P. 447-473 | 45 | 68% | 128 |
10 | SEYLLER, T , (2006) ELECTRONIC PROPERTIES OF SIC SURFACES AND INTERFACES: SOME FUNDAMENTAL AND TECHNOLOGICAL ASPECTS.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 85. ISSUE 4. P. 371-385 | 46 | 55% | 32 |
Classes with closest relation at Level 1 |