Class information for:
Level 1: OHMIC CONTACT//4H SIC//EDGE TERMINATION

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
9042 1193 17.7 66%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
628 3       SILICON CARBIDE//4H SIC//SIC 13252
671 2             SILICON CARBIDE//4H SIC//SIC 13252
9042 1                   OHMIC CONTACT//4H SIC//EDGE TERMINATION 1193

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 OHMIC CONTACT authKW 656202 13% 16% 157
2 4H SIC authKW 522298 9% 19% 109
3 EDGE TERMINATION authKW 384202 3% 44% 34
4 SCHOTTKY DIODE authKW 219334 9% 8% 102
5 JUNCTION BARRIER SCHOTTKY JBS authKW 213279 1% 83% 10
6 JUNCTION TERMINATION EXTENSION JTE authKW 196871 1% 77% 10
7 SILICON CARBIDE authKW 191824 16% 4% 185
8 SCHOTTKY RECTIFIER authKW 150544 1% 59% 10
9 SCHOTTKY BARRIER DIODE authKW 141138 3% 14% 40
10 JUNCTION TERMINATION EXTENSION authKW 109193 1% 53% 8

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 5296 43% 0% 517
2 Engineering, Electrical & Electronic 4007 35% 0% 416
3 Physics, Condensed Matter 3101 28% 0% 332
4 Materials Science, Multidisciplinary 2846 35% 0% 423
5 Materials Science, Coatings & Films 2638 11% 0% 132
6 Materials Science, Characterization, Testing 1359 4% 0% 52
7 Nanoscience & Nanotechnology 361 7% 0% 81
8 Physics, Multidisciplinary 206 8% 0% 92
9 Optics 56 4% 0% 52
10 Chemistry, Physical 18 6% 0% 73

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MATH SCI SPORTS EDUC 76781 0% 100% 3
2 IN FRANTZEVICH PROBLEMS MAT SCI 51188 0% 100% 2
3 METHODS SYST ENGN 51188 0% 100% 2
4 POWER ELECT BUSINESS UNIT 51188 0% 100% 2
5 POWERAMER 51188 0% 100% 2
6 POWER SEMICOND 51172 1% 20% 10
7 WIDE BAND G SEMICOND MAT DEVICES 46839 2% 7% 26
8 IND MICROELECT 31495 0% 31% 4
9 MRG 29153 1% 16% 7
10 ADV POWER DEVICE SAIWAI KU 25594 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MATERIALS SCIENCE FORUM 48012 15% 1% 181
2 SOLID-STATE ELECTRONICS 12657 6% 1% 70
3 IEEE TRANSACTIONS ON ELECTRON DEVICES 8412 6% 0% 71
4 IEEE ELECTRON DEVICE LETTERS 4955 4% 0% 42
5 SEMICONDUCTORS 4871 3% 1% 36
6 JOURNAL OF ELECTRONIC MATERIALS 4812 4% 0% 43
7 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 4457 3% 0% 36
8 CHINESE PHYSICS B 2462 3% 0% 31
9 DIAMOND AND RELATED MATERIALS 2003 2% 0% 24
10 MICROELECTRONIC ENGINEERING 1536 2% 0% 25

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 OHMIC CONTACT 656202 13% 16% 157 Search OHMIC+CONTACT Search OHMIC+CONTACT
2 4H SIC 522298 9% 19% 109 Search 4H+SIC Search 4H+SIC
3 EDGE TERMINATION 384202 3% 44% 34 Search EDGE+TERMINATION Search EDGE+TERMINATION
4 SCHOTTKY DIODE 219334 9% 8% 102 Search SCHOTTKY+DIODE Search SCHOTTKY+DIODE
5 JUNCTION BARRIER SCHOTTKY JBS 213279 1% 83% 10 Search JUNCTION+BARRIER+SCHOTTKY+JBS Search JUNCTION+BARRIER+SCHOTTKY+JBS
6 JUNCTION TERMINATION EXTENSION JTE 196871 1% 77% 10 Search JUNCTION+TERMINATION+EXTENSION+JTE Search JUNCTION+TERMINATION+EXTENSION+JTE
7 SILICON CARBIDE 191824 16% 4% 185 Search SILICON+CARBIDE Search SILICON+CARBIDE
8 SCHOTTKY RECTIFIER 150544 1% 59% 10 Search SCHOTTKY+RECTIFIER Search SCHOTTKY+RECTIFIER
9 SCHOTTKY BARRIER DIODE 141138 3% 14% 40 Search SCHOTTKY+BARRIER+DIODE Search SCHOTTKY+BARRIER+DIODE
10 JUNCTION TERMINATION EXTENSION 109193 1% 53% 8 Search JUNCTION+TERMINATION+EXTENSION Search JUNCTION+TERMINATION+EXTENSION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 WANG, ZT , LIU, W , WANG, CQ , (2016) RECENT PROGRESS IN OHMIC CONTACTS TO SILICON CARBIDE FOR HIGH-TEMPERATURE APPLICATIONS.JOURNAL OF ELECTRONIC MATERIALS. VOL. 45. ISSUE 1. P. 267 -284 106 68% 3
2 KUCHUK, AV , BOROWICZ, P , WZOREK, M , BORYSIEWICZ, M , RATAJCZAK, R , GOLASZEWSKA, K , KAMINSKA, E , KLADKO, V , PIOTROWSKA, A , (2016) NI-BASED OHMIC CONTACTS TO N-TYPE 4H-SIC: THE FORMATION MECHANISM AND THERMAL STABILITY.ADVANCES IN CONDENSED MATTER PHYSICS. VOL. . ISSUE . P. - 55 73% 0
3 SAXENA, V , STECKL, AJ , (1998) BUILDING BLOCKS FOR SIC DEVICES: OHMIC CONTACTS, SCHOTTKY CONTACTS, AND P-N JUNCTIONS.SIC MATERIALS AND DEVICES. VOL. 52. ISSUE . P. 77 -160 67 64% 20
4 BACHLI, A , NICOLET, MA , BAUD, L , JAUSSAUD, C , MADAR, R , (1998) NICKEL FILM ON (001) SIC: THERMALLY INDUCED REACTIONS.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 56. ISSUE 1. P. 11 -23 50 72% 47
5 BARDA, B , MACHAC, P , CICHON, S , MACHOVIC, V , KUDRNOVA, M , MICHALCOVA, A , SIEGEL, J , (2010) ORIGIN OF OHMIC BEHAVIOR IN NI, NI2SI AND PD CONTACTS ON N-TYPE SIC.APPLIED SURFACE SCIENCE. VOL. 257. ISSUE 2. P. 414 -422 32 82% 11
6 YU, HL , ZHANG, XF , SHEN, HJ , TANG, YD , BAI, Y , WU, YD , LIU, K , LIU, XY , (2015) THERMAL STABILITY OF NI/TI/AL OHMIC CONTACTS TO P-TYPE 4H-SIC.JOURNAL OF APPLIED PHYSICS. VOL. 117. ISSUE 2. P. - 24 92% 3
7 ZHOU, TY , LIU, XC , DAI, CC , HUANG, W , ZHUO, SY , SHI, EW , (2014) EFFECT OF GRAPHITE RELATED INTERFACIAL MICROSTRUCTURE CREATED BY HIGH TEMPERATURE ANNEALING ON THE CONTACT PROPERTIES OF NI/TI/6H-SIC.MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. VOL. 188. ISSUE . P. 59 -65 27 84% 4
8 NIKITINA, IP , VASSILEVSKI, KV , HORSFALL, AB , WRIGHT, NG , O'NEILL, AG , JOHNSON, CM , YAMAMOTO, T , MALHAN, RK , (2006) STRUCTURAL PATTERN FORMATION IN TITANIUM-NICKEL CONTACTS ON SILICON CARBIDE FOLLOWING HIGH-TEMPERATURE ANNEALING.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 21. ISSUE 7. P. 898 -905 30 83% 14
9 NIKITINA, I , VASSILEVSKI, K , HORSFALL, A , WRIGHT, N , O'NEILL, AG , RAY, SK , ZEKENTES, K , JOHNSON, CM , (2009) PHASE COMPOSITION AND ELECTRICAL CHARACTERISTICS OF NICKEL SILICIDE SCHOTTKY CONTACTS FORMED ON 4H-SIC.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 24. ISSUE 5. P. - 25 81% 12
10 JOO, SJ , BAEK, S , KIM, SC , LEE, JS , (2013) SIMULTANEOUS FORMATION OF OHMIC CONTACTS ON P (+)- AND N (+)-4H-SIC USING A TI/NI BILAYER.JOURNAL OF ELECTRONIC MATERIALS. VOL. 42. ISSUE 10. P. 2897-2904 21 88% 3

Classes with closest relation at Level 1


Rank Class id link
1 5987 4H SIC//CHANNEL MOBILITY//SIO2 SIC INTERFACE
2 24234 MESFET//4H SIC MESFET//SIC MESFET
3 2631 PHYS MEASUREMENT TECHNOL//MATERIALS SCIENCE FORUM//4H SIC
4 37133 SICGE//SI 6H SIC HETEROJUNCTION//SI 6H SIC
5 15708 SIMA//HEXAGONAL SURFACES//SIC0001
6 2541 MICROPIPE//SUBLIMATION GROWTH//SEMICONDUCTING SILICON COMPOUNDS
7 2724 SERIES RESISTANCE//IDEALITY FACTOR//SCHOTTKY DIODE
8 16138 REVERSELY SWITCHED DYNISTOR RSD//POWER SEMICONDUCTOR DIODE SWITCHES//POWER SEMICOND DEVICES
9 7015 3C SIC//MONOMETHYLSILANE//FG NANOTECHNOL
10 10462 ULTRAVIOLET DETECTORS//PHOTODETECTORS//METAL SEMICONDUCTOR METAL MSM

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