Class information for:
Level 1: GERMANIUM//MBE//GE MOS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
9326 1166 24.0 71%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
589 3       ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS 15224
664 2             ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS 13339
9326 1                   GERMANIUM//MBE//GE MOS 1166

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 GERMANIUM authKW 518659 23% 8% 263
2 MBE address 321154 3% 31% 39
3 GE MOS authKW 320781 1% 88% 14
4 GERMANIUM GE authKW 305839 2% 40% 29
5 GEOI authKW 203157 1% 52% 15
6 GE MOSFET authKW 174570 1% 67% 10
7 FERMI LEVEL UNPINNING authKW 142568 1% 78% 7
8 GE MIS authKW 130933 0% 100% 5
9 GERMANIUM ON INSULATOR GEOI authKW 117830 1% 50% 9
10 INTERFACE STATE DENSITY EXTRACTION authKW 104746 0% 100% 4

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 15268 72% 0% 838
2 Engineering, Electrical & Electronic 3554 33% 0% 389
3 Materials Science, Coatings & Films 2494 11% 0% 127
4 Nanoscience & Nanotechnology 1591 13% 0% 154
5 Physics, Condensed Matter 1088 18% 0% 206
6 Materials Science, Multidisciplinary 513 18% 0% 205
7 Optics 213 7% 0% 82
8 Electrochemistry 105 3% 0% 37
9 Chemistry, Physical 40 7% 0% 86
10 Physics, Multidisciplinary 2 2% 0% 29

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MBE 321154 3% 31% 39
2 ELECT TELECOMMUN PLICAT 104742 1% 67% 6
3 ELE OMACHINE ARCHITECTURE ENGN 78560 0% 100% 3
4 INFORMAT SYST ELECT ENGN 78560 0% 100% 3
5 PAUL G ALLEN INTEGRATED SYST 69828 0% 67% 4
6 SILICON NANO DEVICE 61418 2% 9% 26
7 ELECT TELECOMS PLICAT 52373 0% 100% 2
8 ADSEL 50353 0% 38% 5
9 NAZL MDM 44175 1% 19% 9
10 AIR LIQUIDE KOREA CO 34914 0% 67% 2

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE ELECTRON DEVICE LETTERS 27872 8% 1% 98
2 MICROELECTRONIC ENGINEERING 16453 7% 1% 80
3 APPLIED PHYSICS LETTERS 15077 22% 0% 252
4 IEEE TRANSACTIONS ON ELECTRON DEVICES 11229 7% 1% 81
5 APPLIED PHYSICS EXPRESS 6406 3% 1% 30
6 ECS SOLID STATE LETTERS 4653 1% 2% 8
7 JAPANESE JOURNAL OF APPLIED PHYSICS 4578 5% 0% 53
8 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2841 2% 1% 19
9 SOLID-STATE ELECTRONICS 2190 2% 0% 29
10 APPLIED SURFACE SCIENCE 1192 4% 0% 41

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 GERMANIUM 518659 23% 8% 263 Search GERMANIUM Search GERMANIUM
2 GE MOS 320781 1% 88% 14 Search GE+MOS Search GE+MOS
3 GERMANIUM GE 305839 2% 40% 29 Search GERMANIUM+GE Search GERMANIUM+GE
4 GEOI 203157 1% 52% 15 Search GEOI Search GEOI
5 GE MOSFET 174570 1% 67% 10 Search GE+MOSFET Search GE+MOSFET
6 FERMI LEVEL UNPINNING 142568 1% 78% 7 Search FERMI+LEVEL+UNPINNING Search FERMI+LEVEL+UNPINNING
7 GE MIS 130933 0% 100% 5 Search GE+MIS Search GE+MIS
8 GERMANIUM ON INSULATOR GEOI 117830 1% 50% 9 Search GERMANIUM+ON+INSULATOR+GEOI Search GERMANIUM+ON+INSULATOR+GEOI
9 INTERFACE STATE DENSITY EXTRACTION 104746 0% 100% 4 Search INTERFACE+STATE+DENSITY+EXTRACTION Search INTERFACE+STATE+DENSITY+EXTRACTION
10 SUBSTOICHIOMETRIC OXIDES 104746 0% 100% 4 Search SUBSTOICHIOMETRIC+OXIDES Search SUBSTOICHIOMETRIC+OXIDES

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 XIE, Q , DENG, SR , SCHAEKERS, M , LIN, D , CAYMAX, M , DELABIE, A , QU, XP , JIANG, YL , DEDUYTSCHE, D , DETAVERNIER, C , (2012) GERMANIUM SURFACE PASSIVATION AND ATOMIC LAYER DEPOSITION OF HIGH-K DIELECTRICS-A TUTORIAL REVIEW ON GE-BASED MOS CAPACITORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 27. ISSUE 7. P. - 87 87% 38
2 ZHAO, C , ZHANG, J , XIONG, YH , WANG, WW , XIANG, JJ , WANG, XL , (2015) INVESTIGATION ON THE DOMINANT KEY TO ACHIEVE SUPERIOR GE SURFACE PASSIVATION BY GEOX BASED ON THE OZONE OXIDATION.APPLIED SURFACE SCIENCE. VOL. 357. ISSUE . P. 1857 -1862 34 100% 1
3 BETHGE, O , ZIMMERMANN, C , LUTZER, B , SIMSEK, S , SMOLINER, J , STOGER-POLLACH, M , HENKEL, C , BERTAGNOLLI, E , (2014) EFFECTIVE REDUCTION OF TRAP DENSITY AT THE Y2O3/GE INTERFACE BY RIGOROUS HIGH-TEMPERATURE OXYGEN ANNEALING.JOURNAL OF APPLIED PHYSICS. VOL. 116. ISSUE 21. P. - 42 78% 5
4 GOLEY, PS , HUDAIT, MK , (2014) GERMANIUM BASED FIELD-EFFECT TRANSISTORS: CHALLENGES AND OPPORTUNITIES.MATERIALS. VOL. 7. ISSUE 3. P. 2301-2339 59 43% 23
5 TAKAGI, S , ZHANG, R , TAKENAKA, M , (2013) GE GATE STACKS BASED ON GE OXIDE INTERFACIAL LAYERS AND THE IMPACT ON MOS DEVICE PROPERTIES.MICROELECTRONIC ENGINEERING. VOL. 109. ISSUE . P. 389 -395 28 93% 19
6 MITROVIC, IZ , ALTHOBAITI, M , WEERAKKODY, AD , DHANAK, VR , LINHART, WM , VEAL, TD , SEDGHI, N , HALL, S , CHALKER, PR , TSOUTSOU, D , ET AL (2014) GE INTERFACE ENGINEERING USING ULTRA-THIN LA2O3 AND Y2O3 FILMS: A STUDY INTO THE EFFECT OF DEPOSITION TEMPERATURE.JOURNAL OF APPLIED PHYSICS. VOL. 115. ISSUE 11. P. - 50 54% 5
7 XIE, RL , PHUNG, TH , HE, W , YU, MB , ZHU, CX , (2009) INTERFACE-ENGINEERED HIGH-MOBILITY HIGH-K/GE PMOSFETS WITH 1-NM EQUIVALENT OXIDE THICKNESS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 56. ISSUE 6. P. 1330 -1337 31 89% 33
8 YU, H , SCHAEKERS, M , BARLA, K , HORIGUCHI, N , COLLAERT, N , THEAN, AVY , DE MEYER, K , (2016) CONTACT RESISTIVITIES OF METAL-INSULATOR-SEMICONDUCTOR CONTACTS AND METAL-SEMICONDUCTOR CONTACTS.APPLIED PHYSICS LETTERS. VOL. 108. ISSUE 17. P. - 29 78% 1
9 BETHGE, O , HENKEL, C , ABERMANN, S , POZZOVIVO, G , STOEGER-POLLACH, M , WERNER, WSM , SMOLINER, J , BERTAGNOLLI, E , (2012) STABILITY OF LA2O3 AND GEO2 PASSIVATED GE SURFACES DURING ALD OF ZRO2 HIGH-K DIELECTRIC.APPLIED SURFACE SCIENCE. VOL. 258. ISSUE 8. P. 3444 -3449 27 93% 14
10 LI, M , ZHANG, X , AN, X , HUANG, R , LI, ZQ , YUN, QX , LIN, M , GUO, Y , LIU, PQ , (2015) RESEARCH PROGRESS OF HIGH MOBILITY GERMANIUM BASED METAL OXIDE SEMICONDUCTOR DEVICES.ACTA PHYSICA SINICA. VOL. 64. ISSUE 20. P. - 38 66% 0

Classes with closest relation at Level 1


Rank Class id link
1 14069 GERMANIUM//L DLTS//CNR IMM MATIS
2 6482 III V MOSFET//GAAS MOSFET//INGAAS
3 5777 GESN//GERMANIUM TIN//L NESS
4 20525 SCHOTTKY BARRIER SB//SCHOTTKY BARRIER MOSFET//DOPANT SEGREGATION
5 89 HFO2//HIGH K DIELECTRICS//HIGH K
6 19608 SI SIO2//GE INSULATOR STRUCTURE//MICROWAVE TRANSIENT PHOTOCONDUCTIVITY
7 3619 SIGE//STRAINED SI//SILICON NANOSCI
8 21402 SI001 SUBSTRATES//S UNICAT//INLUMR5270
9 20013 Y2O3 FILM//GADOLINIUM OXIDE GD2O3//Y2O3 THIN FILMS
10 3722 STRAINED SI//MOSFET//BALLISTIC TRANSPORT

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