Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
20013 | 480 | 23.3 | 72% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
589 | 3 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 15224 |
664 | 2 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 13339 |
20013 | 1 | Y2O3 FILM//GADOLINIUM OXIDE GD2O3//Y2O3 THIN FILMS | 480 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | Y2O3 FILM | authKW | 203564 | 1% | 80% | 4 |
2 | GADOLINIUM OXIDE GD2O3 | authKW | 143131 | 1% | 75% | 3 |
3 | Y2O3 THIN FILMS | authKW | 143131 | 1% | 75% | 3 |
4 | YTTRIUM TRIOXIDE | authKW | 143131 | 1% | 75% | 3 |
5 | YTTRIUM OXIDE | authKW | 142972 | 5% | 9% | 25 |
6 | ELECT MAT DEVICES | address | 142452 | 7% | 7% | 34 |
7 | ANGEWANDTE PHYS SENSOR | address | 127229 | 0% | 100% | 2 |
8 | EPITAXIAL DIELECTRIC | authKW | 127229 | 0% | 100% | 2 |
9 | GD OXIDE | authKW | 127229 | 0% | 100% | 2 |
10 | GD2O3 THIN FILM | authKW | 127229 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 4291 | 60% | 0% | 288 |
2 | Materials Science, Coatings & Films | 2550 | 17% | 0% | 81 |
3 | Physics, Condensed Matter | 1298 | 28% | 0% | 136 |
4 | Materials Science, Multidisciplinary | 1097 | 35% | 0% | 167 |
5 | Nanoscience & Nanotechnology | 406 | 11% | 0% | 51 |
6 | Engineering, Electrical & Electronic | 183 | 14% | 0% | 66 |
7 | Materials Science, Ceramics | 125 | 4% | 0% | 17 |
8 | Crystallography | 114 | 5% | 0% | 23 |
9 | Optics | 76 | 7% | 0% | 32 |
10 | Chemistry, Physical | 68 | 11% | 0% | 53 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ELECT MAT DEVICES | 142452 | 7% | 7% | 34 |
2 | ANGEWANDTE PHYS SENSOR | 127229 | 0% | 100% | 2 |
3 | SEMICOND TECHNOL NANOELECT | 72696 | 1% | 29% | 4 |
4 | AMICA | 66309 | 1% | 15% | 7 |
5 | ANGEW PHYS SENSOR | 66257 | 1% | 21% | 5 |
6 | ADV MAT RHEOL PROPER | 63614 | 0% | 100% | 1 |
7 | ANGEWANDTE PHYS SENSORIK | 63614 | 0% | 100% | 1 |
8 | CENTRO INVEST CIENCIA LICADA TECNOL AVANZADA | 63614 | 0% | 100% | 1 |
9 | GLIDA CRG | 63614 | 0% | 100% | 1 |
10 | INVEST CIENCIA LICADA TECNOL AYANZADA | 63614 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | THIN SOLID FILMS | 1990 | 7% | 0% | 34 |
2 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1821 | 5% | 0% | 22 |
3 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 1224 | 2% | 0% | 8 |
4 | JOURNAL OF THE CANADIAN CERAMIC SOCIETY | 1198 | 0% | 2% | 1 |
5 | JOURNAL OF APPLIED PHYSICS | 1161 | 9% | 0% | 45 |
6 | APPLIED PHYSICS LETTERS | 1067 | 9% | 0% | 44 |
7 | CHEMICAL VAPOR DEPOSITION | 1016 | 1% | 0% | 4 |
8 | JOURNAL OF CRYSTAL GROWTH | 711 | 4% | 0% | 19 |
9 | APPLIED SURFACE SCIENCE | 696 | 4% | 0% | 20 |
10 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 686 | 2% | 0% | 9 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | Y2O3 FILM | 203564 | 1% | 80% | 4 | Search Y2O3+FILM | Search Y2O3+FILM |
2 | GADOLINIUM OXIDE GD2O3 | 143131 | 1% | 75% | 3 | Search GADOLINIUM+OXIDE+GD2O3 | Search GADOLINIUM+OXIDE+GD2O3 |
3 | Y2O3 THIN FILMS | 143131 | 1% | 75% | 3 | Search Y2O3+THIN+FILMS | Search Y2O3+THIN+FILMS |
4 | YTTRIUM TRIOXIDE | 143131 | 1% | 75% | 3 | Search YTTRIUM+TRIOXIDE | Search YTTRIUM+TRIOXIDE |
5 | YTTRIUM OXIDE | 142972 | 5% | 9% | 25 | Search YTTRIUM+OXIDE | Search YTTRIUM+OXIDE |
6 | EPITAXIAL DIELECTRIC | 127229 | 0% | 100% | 2 | Search EPITAXIAL+DIELECTRIC | Search EPITAXIAL+DIELECTRIC |
7 | GD OXIDE | 127229 | 0% | 100% | 2 | Search GD+OXIDE | Search GD+OXIDE |
8 | GD2O3 THIN FILM | 127229 | 0% | 100% | 2 | Search GD2O3+THIN+FILM | Search GD2O3+THIN+FILM |
9 | Y2O3 | 99894 | 6% | 6% | 28 | Search Y2O3 | Search Y2O3 |
10 | 3 4 DIMETHYLDIPHENYL METHANE | 63614 | 0% | 100% | 1 | Search 3+4+DIMETHYLDIPHENYL+METHANE | Search 3+4+DIMETHYLDIPHENYL+METHANE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | TSUCHIYA, M , BOJARCZUK, NA , GUHA, S , RAMANATHAN, S , (2010) TRANSMISSION ELECTRON MICROSCOPY STUDIES ON STRUCTURE AND DEFECTS IN CRYSTALLINE YTTRIA AND LANTHANUM OXIDE THIN FILMS GROWN ON SINGLE CRYSTAL SAPPHIRE BY MOLECULAR BEAM SYNTHESIS.PHILOSOPHICAL MAGAZINE. VOL. 90. ISSUE 9. P. 1123 -1139 | 35 | 57% | 3 |
2 | CHOPADE, SS , BARVE, SA , RAMAN, KHT , CHAND, N , DEO, MN , BISWAS, A , RAI, S , LODHA, GS , RAO, GM , PATIL, DS , (2013) RF PLASMA MOCVD OF Y2O3 THIN FILMS: EFFECT OF RF SELF-BIAS ON THE SUBSTRATES DURING DEPOSITION.APPLIED SURFACE SCIENCE. VOL. 285. ISSUE . P. 524-531 | 23 | 74% | 7 |
3 | LEI, P , ZHU, JQ , ZHU, YK , JIANG, CZ , YIN, XB , (2013) EVOLUTION OF COMPOSITION, MICROSTRUCTURE AND OPTICAL PROPERTIES OF YTTRIUM OXIDE THIN FILMS WITH SUBSTRATE TEMPERATURE.SURFACE & COATINGS TECHNOLOGY. VOL. 229. ISSUE . P. 226-230 | 25 | 66% | 12 |
4 | LEI, P , ZHU, JQ , ZHU, YK , JIANG, CZ , YIN, XB , (2012) YTTRIUM OXIDE THIN FILMS PREPARED UNDER DIFFERENT OXYGEN-CONTENT ATMOSPHERES: MICROSTRUCTURE AND OPTICAL PROPERTIES.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 108. ISSUE 3. P. 621 -628 | 23 | 61% | 4 |
5 | KARLE, S , DANG, VS , PRENZEL, M , ROGALLA, D , BECKER, HW , DEVI, A , (2015) METAL-ORGANIC CVD OF Y2O3 THIN FILMS USING YTTRIUM TRIS-AMIDINATES.CHEMICAL VAPOR DEPOSITION. VOL. 21. ISSUE 10-12. P. 335 -342 | 25 | 52% | 0 |
6 | SCHAEFER, A , ZIELASEK, V , SCHMIDT, T , SANDELL, A , SCHOWALTER, M , SEIFARTH, O , WALLE, LE , SCHULZ, C , WOLLSCHLAGER, J , SCHROEDER, T , ET AL (2009) GROWTH OF PRASEODYMIUM OXIDE ON SI(111) UNDER OXYGEN-DEFICIENT CONDITIONS.PHYSICAL REVIEW B. VOL. 80. ISSUE 4. P. - | 27 | 47% | 4 |
7 | BARVE, SA , JAGANNATH , MITHAL, N , DEO, MN , BISWAS, A , MISHRA, R , KISHORE, R , BHANAGE, BM , GANTAYET, LM , PATIL, DS , (2011) EFFECTS OF PRECURSOR EVAPORATION TEMPERATURE ON THE PROPERTIES OF THE YTTRIUM OXIDE THIN FILMS DEPOSITED BY MICROWAVE ELECTRON CYCLOTRON RESONANCE PLASMA ASSISTED METAL ORGANIC CHEMICAL VAPOR DEPOSITION.THIN SOLID FILMS. VOL. 519. ISSUE 10. P. 3011-3020 | 19 | 61% | 9 |
8 | DARGIS, R , ARKUN, E , CLARK, A , ROUCKA, R , SMITH, R , WILLIAMS, D , LEBBY, M , DEMKOV, AA , (2012) RARE-EARTH-METAL OXIDE BUFFER FOR EPITAXIAL GROWTH OF SINGLE CRYSTAL GESI AND GE ON SI(111).JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 30. ISSUE 2. P. - | 17 | 68% | 2 |
9 | WANG, JX , LAHA, A , FISSEL, A , SCHWENDT, D , DARGIS, R , WATAHIKI, T , SHAYDUK, R , BRAUN, W , LIU, TM , OSTEN, HJ , (2009) CRYSTAL STRUCTURE AND STRAIN STATE OF MOLECULAR BEAM EPITAXIAL GROWN GD2O3 ON SI(111) SUBSTRATES: A DIFFRACTION STUDY.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 24. ISSUE 4. P. - | 17 | 68% | 8 |
10 | HUA, CY , GUO, JC , LIU, JL , YAN, XB , ZHAO, Y , CHEN, LX , WEI, JJ , HEI, LF , LI, CM , (2016) CHARACTERIZATION AND THERMAL SHOCK BEHAVIOR OF Y2O3 FILMS DEPOSITED ON FREESTANDING CVD DIAMOND SUBSTRATES.APPLIED SURFACE SCIENCE. VOL. 376. ISSUE . P. 145 -150 | 17 | 59% | 0 |
Classes with closest relation at Level 1 |