Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
589 | 15224 | 23.9 | 68% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
589 | 3 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 15224 |
664 | 2 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 13339 |
3561 | 2 | DIELECTRIC PHENOMENA//CBH MECHANISM//EUROPIUM INDIUM OXIDE | 1325 |
4119 | 2 | ANAL STRUCT MAT//UNITE RECH PHYS SOLIDE//PHYS MATIERE CONDENSEE NANOSCI LR ES 40 11 | 560 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ATOMIC LAYER DEPOSITION | authKW | 568539 | 5% | 36% | 783 |
2 | HFO2 | authKW | 375771 | 2% | 53% | 357 |
3 | HIGH K DIELECTRICS | authKW | 356701 | 2% | 52% | 345 |
4 | HIGH K | authKW | 329693 | 2% | 47% | 347 |
5 | HIGH K GATE DIELECTRICS | authKW | 208299 | 1% | 67% | 155 |
6 | HAFNIUM OXIDE | authKW | 159785 | 1% | 51% | 155 |
7 | METAL GATE | authKW | 153493 | 1% | 46% | 165 |
8 | ALD | authKW | 141395 | 1% | 36% | 197 |
9 | PHYSICS, APPLIED | WoSSC | 126339 | 58% | 1% | 8821 |
10 | MFIS | authKW | 101033 | 0% | 75% | 67 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 126339 | 58% | 1% | 8821 |
2 | Materials Science, Coatings & Films | 73472 | 16% | 2% | 2452 |
3 | Physics, Condensed Matter | 29513 | 24% | 0% | 3710 |
4 | Materials Science, Multidisciplinary | 21395 | 28% | 0% | 4289 |
5 | Engineering, Electrical & Electronic | 13455 | 19% | 0% | 2947 |
6 | Nanoscience & Nanotechnology | 12719 | 11% | 0% | 1609 |
7 | Electrochemistry | 3058 | 4% | 0% | 671 |
8 | Chemistry, Physical | 1831 | 10% | 0% | 1597 |
9 | Materials Science, Ceramics | 1438 | 2% | 0% | 348 |
10 | Optics | 780 | 4% | 0% | 682 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SILICON NANO DEVICE | 75120 | 1% | 36% | 104 |
2 | EXPT PHYS TECHNOL | 74855 | 0% | 64% | 58 |
3 | INTERUNIV SEMICOND | 54830 | 1% | 17% | 158 |
4 | MBE | 47060 | 0% | 44% | 54 |
5 | RADIAT DETECT MAT DEVICES | 34715 | 0% | 67% | 26 |
6 | MDM | 28188 | 0% | 20% | 72 |
7 | ANGSTROM MICROSTRUCT | 26780 | 0% | 70% | 19 |
8 | ADV PROC DEV TEAM | 26315 | 0% | 77% | 17 |
9 | ANHUI NANOMAT NANOSTRUCT | 25395 | 0% | 21% | 60 |
10 | CHAIR NANOELECT MAT | 23634 | 0% | 54% | 22 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MICROELECTRONIC ENGINEERING | 46374 | 3% | 5% | 488 |
2 | APPLIED PHYSICS LETTERS | 45764 | 11% | 2% | 1614 |
3 | CHEMICAL VAPOR DEPOSITION | 42722 | 1% | 15% | 146 |
4 | THIN SOLID FILMS | 36380 | 5% | 2% | 823 |
5 | INTEGRATED FERROELECTRICS | 36217 | 2% | 7% | 268 |
6 | IEEE ELECTRON DEVICE LETTERS | 36088 | 3% | 5% | 406 |
7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 24339 | 3% | 3% | 420 |
8 | ELECTROCHEMICAL AND SOLID STATE LETTERS | 18801 | 1% | 5% | 202 |
9 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 13769 | 3% | 2% | 466 |
10 | JOURNAL OF APPLIED PHYSICS | 12748 | 6% | 1% | 861 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ATOMIC LAYER DEPOSITION | 568539 | 5% | 36% | 783 | Search ATOMIC+LAYER+DEPOSITION | Search ATOMIC+LAYER+DEPOSITION |
2 | HFO2 | 375771 | 2% | 53% | 357 | Search HFO2 | Search HFO2 |
3 | HIGH K DIELECTRICS | 356701 | 2% | 52% | 345 | Search HIGH+K+DIELECTRICS | Search HIGH+K+DIELECTRICS |
4 | HIGH K | 329693 | 2% | 47% | 347 | Search HIGH+K | Search HIGH+K |
5 | HIGH K GATE DIELECTRICS | 208299 | 1% | 67% | 155 | Search HIGH+K+GATE+DIELECTRICS | Search HIGH+K+GATE+DIELECTRICS |
6 | HAFNIUM OXIDE | 159785 | 1% | 51% | 155 | Search HAFNIUM+OXIDE | Search HAFNIUM+OXIDE |
7 | METAL GATE | 153493 | 1% | 46% | 165 | Search METAL+GATE | Search METAL+GATE |
8 | ALD | 141395 | 1% | 36% | 197 | Search ALD | Search ALD |
9 | MFIS | 101033 | 0% | 75% | 67 | Search MFIS | Search MFIS |
10 | HAFNIUM COMPOUNDS | 94725 | 1% | 43% | 109 | Search HAFNIUM+COMPOUNDS | Search HAFNIUM+COMPOUNDS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | MIIKKULAINEN, V , LESKELA, M , RITALA, M , PUURUNEN, RL , (2013) CRYSTALLINITY OF INORGANIC FILMS GROWN BY ATOMIC LAYER DEPOSITION: OVERVIEW AND GENERAL TRENDS.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 2. P. - | 1134 | 49% | 301 |
2 | PUURUNEN, RL , (2005) SURFACE CHEMISTRY OF ATOMIC LAYER DEPOSITION: A CASE STUDY FOR THE TRIMETHYLALUMINUM/WATER PROCESS.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 12. P. - | 476 | 44% | 1060 |
3 | ROBERTSON, J , WALLACE, RM , (2015) HIGH-K MATERIALS AND METAL GATES FOR CMOS APPLICATIONS.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 88. ISSUE . P. 1 -41 | 228 | 81% | 53 |
4 | ROBERTSON, J , (2006) HIGH DIELECTRIC CONSTANT GATE OXIDES FOR METAL OXIDE SI TRANSISTORS.REPORTS ON PROGRESS IN PHYSICS. VOL. 69. ISSUE 2. P. 327 -396 | 178 | 85% | 959 |
5 | GEORGE, SM , (2010) ATOMIC LAYER DEPOSITION: AN OVERVIEW.CHEMICAL REVIEWS. VOL. 110. ISSUE 1. P. 111 -131 | 134 | 64% | 1462 |
6 | HE, G , ZHU, LQ , SUN, ZQ , WAN, Q , ZHANG, LD , (2011) INTEGRATIONS AND CHALLENGES OF NOVEL HIGH-K GATE STACKS IN ADVANCED CMOS TECHNOLOGY.PROGRESS IN MATERIALS SCIENCE. VOL. 56. ISSUE 5. P. 475 -572 | 247 | 70% | 61 |
7 | CHOI, JH , MAO, Y , CHANG, JP , (2011) DEVELOPMENT OF HAFNIUM BASED HIGH-K MATERIALS-A REVIEW.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 72. ISSUE 6. P. 97 -136 | 180 | 67% | 155 |
8 | O'NEILL, BJ , JACKSON, DHK , LEE, J , CANLAS, C , STAIR, PC , MARSHALL, CL , ELAM, JW , KUECH, TF , DUMESIC, JA , HUBER, GW , (2015) CATALYST DESIGN WITH ATOMIC LAYER DEPOSITION.ACS CATALYSIS. VOL. 5. ISSUE 3. P. 1804 -1825 | 130 | 58% | 51 |
9 | ROBERTSON, J , (2004) HIGH DIELECTRIC CONSTANT OXIDES.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. VOL. 28. ISSUE 3. P. 265-291 | 104 | 81% | 663 |
10 | VAN BUI, H , GRILLO, F , VAN OMMEN, JR , (2017) ATOMIC AND MOLECULAR LAYER DEPOSITION: OFF THE BEATEN TRACK.CHEMICAL COMMUNICATIONS. VOL. 53. ISSUE 1. P. 45 -71 | 146 | 44% | 1 |
Classes with closest relation at Level 3 |