Class information for:
Level 1: SCHOTTKY BARRIER SB//SCHOTTKY BARRIER MOSFET//DOPANT SEGREGATION

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
20525 456 18.7 63%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
746 2             BETA FESI2//SILICIDES//SERIES RESISTANCE 12475
20525 1                   SCHOTTKY BARRIER SB//SCHOTTKY BARRIER MOSFET//DOPANT SEGREGATION 456

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SCHOTTKY BARRIER SB authKW 1220375 6% 68% 27
2 SCHOTTKY BARRIER MOSFET authKW 753321 3% 75% 15
3 DOPANT SEGREGATION authKW 718488 6% 41% 26
4 DOPANT SEGREGATION DS authKW 690764 3% 74% 14
5 SCHOTTKY BARRIER SB MOSFET authKW 476176 2% 89% 8
6 SCHOTTKY MOSFET authKW 344377 1% 86% 6
7 SCHOTTKY BARRIER SB LOWERING authKW 334813 1% 100% 5
8 SCHOTTKY SOURCE DRAIN MOSFET authKW 334813 1% 100% 5
9 SCHOTTKY BARRIER authKW 294775 16% 6% 73
10 METAL SOURCE DRAIN authKW 279009 1% 83% 5

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 4412 62% 0% 284
2 Engineering, Electrical & Electronic 4086 55% 0% 251
3 Nanoscience & Nanotechnology 552 13% 0% 57
4 Physics, Condensed Matter 383 17% 0% 77
5 Materials Science, Multidisciplinary 104 14% 0% 63
6 Optics 47 6% 0% 26
7 Materials Science, Coatings & Films 41 3% 0% 12
8 Physics, Multidisciplinary 34 6% 0% 26
9 Nuclear Science & Technology 0 1% 0% 5
10 Physics, Nuclear 0 1% 0% 5

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ADV I MEMS TEAM 214278 1% 80% 4
2 TECHNOL FDN GRP 133925 0% 100% 2
3 BIO NANOSYST IBNI 89282 0% 67% 2
4 U TERMINAL TEAM 89282 0% 67% 2
5 NANOELECT DEVICE TEAM 86091 1% 43% 3
6 SEMICOND BASIC 76523 1% 29% 4
7 SILICON NANO DEVICE 75299 4% 6% 18
8 BIO NANSYSTIBN I 66963 0% 100% 1
9 CENT ANALYT CHEM ZHC 66963 0% 100% 1
10 EXPLORATORY TECHNOL DEV 66963 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE ELECTRON DEVICE LETTERS 38596 16% 1% 72
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 22236 16% 0% 71
3 SOLID-STATE ELECTRONICS 4927 6% 0% 27
4 MICROELECTRONIC ENGINEERING 4099 5% 0% 25
5 IEEE TRANSACTIONS ON NANOTECHNOLOGY 1827 2% 0% 7
6 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 1402 3% 0% 13
7 JAPANESE JOURNAL OF APPLIED PHYSICS 1346 4% 0% 18
8 APPLIED PHYSICS LETTERS 1075 9% 0% 43
9 SUPERLATTICES AND MICROSTRUCTURES 661 2% 0% 8
10 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 601 4% 0% 17

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SCHOTTKY BARRIER SB 1220375 6% 68% 27 Search SCHOTTKY+BARRIER+SB Search SCHOTTKY+BARRIER+SB
2 SCHOTTKY BARRIER MOSFET 753321 3% 75% 15 Search SCHOTTKY+BARRIER+MOSFET Search SCHOTTKY+BARRIER+MOSFET
3 DOPANT SEGREGATION 718488 6% 41% 26 Search DOPANT+SEGREGATION Search DOPANT+SEGREGATION
4 DOPANT SEGREGATION DS 690764 3% 74% 14 Search DOPANT+SEGREGATION+DS Search DOPANT+SEGREGATION+DS
5 SCHOTTKY BARRIER SB MOSFET 476176 2% 89% 8 Search SCHOTTKY+BARRIER+SB+MOSFET Search SCHOTTKY+BARRIER+SB+MOSFET
6 SCHOTTKY MOSFET 344377 1% 86% 6 Search SCHOTTKY+MOSFET Search SCHOTTKY+MOSFET
7 SCHOTTKY BARRIER SB LOWERING 334813 1% 100% 5 Search SCHOTTKY+BARRIER+SB+LOWERING Search SCHOTTKY+BARRIER+SB+LOWERING
8 SCHOTTKY SOURCE DRAIN MOSFET 334813 1% 100% 5 Search SCHOTTKY+SOURCE+DRAIN+MOSFET Search SCHOTTKY+SOURCE+DRAIN+MOSFET
9 SCHOTTKY BARRIER 294775 16% 6% 73 Search SCHOTTKY+BARRIER Search SCHOTTKY+BARRIER
10 METAL SOURCE DRAIN 279009 1% 83% 5 Search METAL+SOURCE+DRAIN Search METAL+SOURCE+DRAIN

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 LARSON, JM , SNYDER, JP , (2006) OVERVIEW AND STATUS OF METAL S/D SCHOTTKY-BARRIER MOSFET TECHNOLOGY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 53. ISSUE 5. P. 1048-1058 33 92% 251
2 MARTIN, MJ , PASCUAL, E , RENGEL, R , (2012) RF DYNAMIC AND NOISE PERFORMANCE OF METALLIC SOURCE/DRAIN SOI N-MOSFETS.SOLID-STATE ELECTRONICS. VOL. 73. ISSUE . P. 64 -73 35 64% 3
3 MARTIN-MARTINEZ, MJ , COUSO, C , PASCUAL, E , RENGEL, R , (2014) MONTE CARLO STUDY OF DOPANT-SEGREGATED SCHOTTKY BARRIER SOI MOSFETS: ENHANCEMENT OF THE RF PERFORMANCE.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 61. ISSUE 12. P. 3955 -3961 25 78% 3
4 SHIH, CH , YEH, SP , (2008) DEVICE CONSIDERATIONS AND DESIGN OPTIMIZATIONS FOR DOPANT SEGREGATED SCHOTTKY BARRIER MOSFETS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 23. ISSUE 12. P. - 22 92% 5
5 ZHU, GJ , ZHOU, X , CHIN, YK , PEY, KL , ZHANG, JB , SEE, GH , LIN, SH , YAN, YF , CHEN, ZH , (2010) SUBCIRCUIT COMPACT MODEL FOR DOPANT-SEGREGATED SCHOTTKY GATE-ALL-AROUND SI-NANOWIRE MOSFETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 4. P. 772-781 23 79% 13
6 CHANG, W , SHIH, CH , LUO, YX , WU, WF , LIEN, C , (2014) DRAIN-INDUCED SCHOTTKY BARRIER SOURCE-SIDE HOT CARRIERS AND ITS APPLICATION TO PROGRAM LOCAL BITS OF NANOWIRE CHARGE-TRAPPING MEMORIES.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 9. P. - 20 83% 1
7 LUO, J , QIU, ZJ , ZHANG, Z , OSTLING, M , ZHANG, SL , (2010) INTERACTION OF NISI WITH DOPANTS FOR METALLIC SOURCE/DRAIN APPLICATIONS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 28. ISSUE 1. P. C1I1 -C1I11 31 53% 0
8 LIM, PSY , CHI, DZ , LIM, PC , YEO, YC , (2012) MODULATION OF EFFECTIVE SCHOTTKY BARRIER HEIGHT OF NICKEL SILICIDE ON SILICON USING PRE-SILICIDE AMMONIUM SULFIDE TREATMENT.JOURNAL OF APPLIED PHYSICS. VOL. 111. ISSUE 7. P. - 19 76% 3
9 TONG, Y , HAN, GQ , LIU, B , YANG, Y , WANG, LX , WANG, W , YEO, YC , (2013) NI(GE1-XSNX) OHMIC CONTACT FORMATION ON N-TYPE GE1-XSNX USING SELENIUM OR SULFUR IMPLANT AND SEGREGATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 60. ISSUE 2. P. 746 -752 19 70% 10
10 JHAVERI, R , NAGAVARAPU, V , WOO, JCS , (2009) ASYMMETRIC SCHOTTKY TUNNELING SOURCE SOI MOSFET DESIGN FOR MIXED-MODE APPLICATIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 56. ISSUE 1. P. 93-99 18 78% 27

Classes with closest relation at Level 1


Rank Class id link
1 4634 NICKEL SILICIDE//NISI//NI SILICIDE
2 14980 ERBIUM SILICIDE//YTTRIUM SILICIDE//RARE EARTH SILICIDES
3 26250 SILICIDE NANOWIRES//NICKEL SUICIDE//POINT CONTACT REACTIONS
4 9326 GERMANIUM//MBE//GE MOS
5 566 FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET
6 10635 TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNELING FIELD EFFECT TRANSISTOR TFET//BAND TO BAND TUNNELING BTBT
7 3722 STRAINED SI//MOSFET//BALLISTIC TRANSPORT
8 26157 VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX
9 19107 LASER MOL BEAM EPITAXY//PTSI//INTERNAL PHOTOEMISSION EFFECT
10 29312 CROSS KELVIN RESISTOR CKR//CROSS BRIDGE KELVIN RESISTOR CBKR//POLYMETAL

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