Class information for:
Level 1: HFO2//HIGH K DIELECTRICS//HIGH K

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
89 4457 24.3 72%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
589 3       ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS 15224
664 2             ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS 13339
89 1                   HFO2//HIGH K DIELECTRICS//HIGH K 4457

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 HFO2 authKW 819002 6% 42% 285
2 HIGH K DIELECTRICS authKW 625233 6% 37% 247
3 HIGH K authKW 557506 5% 33% 244
4 HIGH K GATE DIELECTRICS authKW 508714 3% 57% 131
5 METAL GATE authKW 394363 3% 40% 143
6 HAFNIUM OXIDE authKW 311348 3% 39% 117
7 HAFNIUM COMPOUNDS authKW 251365 2% 38% 96
8 GATE DIELECTRIC authKW 191272 2% 27% 104
9 HFSION authKW 173447 1% 59% 43
10 HAFNIUM SILICATE authKW 167459 1% 68% 36

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 52053 68% 0% 3034
2 Materials Science, Coatings & Films 19467 15% 0% 684
3 Engineering, Electrical & Electronic 7170 25% 0% 1117
4 Nanoscience & Nanotechnology 6248 13% 0% 596
5 Physics, Condensed Matter 5446 20% 0% 885
6 Materials Science, Multidisciplinary 3277 22% 0% 959
7 Electrochemistry 1168 5% 0% 220
8 Optics 759 7% 0% 305
9 Materials Science, Ceramics 403 2% 0% 100
10 Chemistry, Physical 103 7% 0% 299

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 RADIAT DETECT MAT DEVICES 92884 1% 59% 23
2 SILICON NANO DEVICE 88397 1% 21% 61
3 ANHUI NANOMAT NANOSTRUCT 78542 1% 20% 57
4 ADV PROC DEV TEAM 70039 0% 68% 15
5 LONDON NANOTECHNOL ELECT ELECT ENGN 61643 0% 100% 9
6 EXPT PHYS TECHNOL 55441 1% 30% 27
7 MIRAI ASET 48704 0% 89% 8
8 TEL TECHNOL 42857 0% 48% 13
9 ENERGY EFFICIENT SUSTAINABLE SEMICOND GRP 42746 0% 39% 16
10 ATD DEVICE 34246 0% 100% 5

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MICROELECTRONIC ENGINEERING 49332 6% 3% 271
2 APPLIED PHYSICS LETTERS 36425 17% 1% 769
3 IEEE ELECTRON DEVICE LETTERS 23600 4% 2% 177
4 ELECTROCHEMICAL AND SOLID STATE LETTERS 15243 2% 2% 98
5 JOURNAL OF APPLIED PHYSICS 8994 9% 0% 383
6 CHEMICAL VAPOR DEPOSITION 8861 1% 4% 36
7 MICROELECTRONICS RELIABILITY 7866 2% 1% 90
8 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 7129 4% 1% 180
9 IEEE TRANSACTIONS ON ELECTRON DEVICES 7074 3% 1% 127
10 THIN SOLID FILMS 6831 4% 1% 194

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 HFO2 819002 6% 42% 285 Search HFO2 Search HFO2
2 HIGH K DIELECTRICS 625233 6% 37% 247 Search HIGH+K+DIELECTRICS Search HIGH+K+DIELECTRICS
3 HIGH K 557506 5% 33% 244 Search HIGH+K Search HIGH+K
4 HIGH K GATE DIELECTRICS 508714 3% 57% 131 Search HIGH+K+GATE+DIELECTRICS Search HIGH+K+GATE+DIELECTRICS
5 METAL GATE 394363 3% 40% 143 Search METAL+GATE Search METAL+GATE
6 HAFNIUM OXIDE 311348 3% 39% 117 Search HAFNIUM+OXIDE Search HAFNIUM+OXIDE
7 HAFNIUM COMPOUNDS 251365 2% 38% 96 Search HAFNIUM+COMPOUNDS Search HAFNIUM+COMPOUNDS
8 GATE DIELECTRIC 191272 2% 27% 104 Search GATE+DIELECTRIC Search GATE+DIELECTRIC
9 HFSION 173447 1% 59% 43 Search HFSION Search HFSION
10 HAFNIUM SILICATE 167459 1% 68% 36 Search HAFNIUM+SILICATE Search HAFNIUM+SILICATE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 ROBERTSON, J , WALLACE, RM , (2015) HIGH-K MATERIALS AND METAL GATES FOR CMOS APPLICATIONS.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 88. ISSUE . P. 1 -41 178 63% 53
2 ROBERTSON, J , (2006) HIGH DIELECTRIC CONSTANT GATE OXIDES FOR METAL OXIDE SI TRANSISTORS.REPORTS ON PROGRESS IN PHYSICS. VOL. 69. ISSUE 2. P. 327 -396 145 69% 959
3 HE, G , ZHU, LQ , SUN, ZQ , WAN, Q , ZHANG, LD , (2011) INTEGRATIONS AND CHALLENGES OF NOVEL HIGH-K GATE STACKS IN ADVANCED CMOS TECHNOLOGY.PROGRESS IN MATERIALS SCIENCE. VOL. 56. ISSUE 5. P. 475 -572 206 59% 61
4 CHOI, JH , MAO, Y , CHANG, JP , (2011) DEVELOPMENT OF HAFNIUM BASED HIGH-K MATERIALS-A REVIEW.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 72. ISSUE 6. P. 97 -136 152 56% 155
5 ROBERTSON, J , (2004) HIGH DIELECTRIC CONSTANT OXIDES.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. VOL. 28. ISSUE 3. P. 265-291 93 72% 663
6 HE, G , SUN, ZQ , LI, G , ZHANG, LD , (2012) REVIEW AND PERSPECTIVE OF HF-BASED HIGH-K GATE DIELECTRICS ON SILICON.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 37. ISSUE 3. P. 131 -157 92 84% 20
7 ROBERTSON, J , (2008) MAXIMIZING PERFORMANCE FOR HIGHER K GATE DIELECTRICS.JOURNAL OF APPLIED PHYSICS. VOL. 104. ISSUE 12. P. - 65 90% 94
8 HE, G , DENG, B , SUN, ZQ , CHEN, XS , LIU, YM , ZHANG, LD , (2013) CVD-DERIVED HF-BASED HIGH-K GATE DIELECTRICS.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 38. ISSUE 4. P. 235-261 73 78% 16
9 WALLACE, RM , WILK, GD , (2003) HIGH-KAPPA DIELECTRIC MATERIALS FOR MICROELECTRONICS.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 28. ISSUE 4. P. 231 -285 92 72% 121
10 WIEMER, C , LAMAGNA, L , FANCIULLI, M , (2012) ATOMIC LAYER DEPOSITION OF RARE-EARTH-BASED BINARY AND TERNARY OXIDES FOR MICROELECTRONIC APPLICATIONS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 27. ISSUE 7. P. - 72 77% 14

Classes with closest relation at Level 1


Rank Class id link
1 20013 Y2O3 FILM//GADOLINIUM OXIDE GD2O3//Y2O3 THIN FILMS
2 19257 METAL INSULATOR METAL MIM CAPACITOR//METAL INSULATOR METAL MIM//VOLTAGE COEFFICIENT OF CAPACITANCE VCC
3 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
4 18296 ADV COATINGS EXPT//ZRO2 FILMS//TETRAGONAL AND MONOCLINIC PHASES
5 9326 GERMANIUM//MBE//GE MOS
6 9796 TANTALUM OXIDE//TA2O5//TANTALUM PENTOXIDE
7 28210 NEGATIVE CAPACITANCE//CHAIR NANOELECT MAT//NAM GGMBH
8 2435 ATOMIC LAYER DEPOSITION//ALD//MOLECULAR LAYER DEPOSITION
9 21402 SI001 SUBSTRATES//S UNICAT//INLUMR5270
10 22002 DIELECTRIC PHENOMENA//CBH MECHANISM//EUROPIUM INDIUM OXIDE

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