Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
31635 | 150 | 15.8 | 42% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
3874 | 2 | AC SURFACE PHOTOVOLTAGE//TECH M PUPIN//SCANNING PHOTON MICROSCOPE | 868 |
31635 | 1 | 2D BIFURCATIONS//QUANTUM TUNNELING WITH DISSIPATION//EDUC SCANNING PROBE MICROSCOPY | 150 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | 2D BIFURCATIONS | authKW | 407140 | 1% | 100% | 2 |
2 | QUANTUM TUNNELING WITH DISSIPATION | authKW | 407140 | 1% | 100% | 2 |
3 | EDUC SCANNING PROBE MICROSCOPY | address | 407136 | 3% | 50% | 4 |
4 | DISSIPATIVE TUNNELING | authKW | 305352 | 2% | 50% | 3 |
5 | ZAVOISKY PHYS TECHNOL | address | 271426 | 1% | 67% | 2 |
6 | DIAMOND AND GRAPHITE FILMS | authKW | 203570 | 1% | 100% | 1 |
7 | EMISSION OF NON EQUILIBRIUM CARRIERS | authKW | 203570 | 1% | 100% | 1 |
8 | IMPURITY LEVEL WIDTH | authKW | 203570 | 1% | 100% | 1 |
9 | PHOTOELECTRIC SPECTROSCOPY | authKW | 203570 | 1% | 100% | 1 |
10 | PROBABILITY OF PHOTOIONIZATION | authKW | 203570 | 1% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 1332 | 49% | 0% | 74 |
2 | Physics, Applied | 212 | 26% | 0% | 39 |
3 | Physics, Multidisciplinary | 113 | 14% | 0% | 21 |
4 | Nanoscience & Nanotechnology | 12 | 4% | 0% | 6 |
5 | Materials Science, Multidisciplinary | 5 | 8% | 0% | 12 |
6 | Crystallography | 1 | 1% | 0% | 2 |
7 | Physics, Particles & Fields | 0 | 1% | 0% | 2 |
8 | Mathematics, Interdisciplinary Applications | 0 | 1% | 0% | 1 |
9 | Physics, Atomic, Molecular & Chemical | -0 | 1% | 0% | 2 |
10 | Chemistry, Multidisciplinary | -0 | 3% | 0% | 5 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | EDUC SCANNING PROBE MICROSCOPY | 407136 | 3% | 50% | 4 |
2 | ZAVOISKY PHYS TECHNOL | 271426 | 1% | 67% | 2 |
3 | REG SCANNING MICROSCOPY | 203570 | 1% | 100% | 1 |
4 | EDUC PHYS SOLID STATE NANOSTRUCT | 122137 | 2% | 20% | 3 |
5 | SARATOV BRANCH | 119497 | 11% | 4% | 16 |
6 | PHYS SOLID STATE NANOSTRUCT EDUC | 101784 | 1% | 50% | 1 |
7 | LOBACHEVSKY PHYS TECH | 67855 | 1% | 33% | 1 |
8 | SCI TECH SINGLE CRYSTALS | 67855 | 1% | 33% | 1 |
9 | SPE OSCOP TECHNOL | 67855 | 1% | 33% | 1 |
10 | KOTELNIKOV RADIO ENGN ELECT | 36849 | 8% | 2% | 12 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SEMICONDUCTORS | 29089 | 21% | 0% | 31 |
2 | TECHNICAL PHYSICS LETTERS | 13898 | 14% | 0% | 21 |
3 | JOURNAL OF SURFACE INVESTIGATION | 13145 | 4% | 1% | 6 |
4 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 9341 | 11% | 0% | 16 |
5 | MOSCOW UNIVERSITY PHYSICS BULLETIN | 9241 | 4% | 1% | 6 |
6 | PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 6041 | 3% | 1% | 5 |
7 | JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 4084 | 2% | 1% | 3 |
8 | TECHNICAL PHYSICS | 2945 | 6% | 0% | 9 |
9 | IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 823 | 2% | 0% | 3 |
10 | INORGANIC MATERIALS | 343 | 3% | 0% | 4 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GORSHKOV, AP , KARPOVICH, IA , PAVLOVA, ED , VOLKOVA, NS , (2012) EFFECT OF HE+ ION IRRADIATION ON THE PHOTOSENSITIVITY SPECTRA OF IN(GA)AS/GAAS QUANTUM WELL AND QUANTUM DOT HETEROSTRUCTURES.SEMICONDUCTORS. VOL. 46. ISSUE 12. P. 1506-1509 | 5 | 83% | 0 |
2 | ZHUKOVSKY, VC , KREVCHIK, VD , SEMENOV, MB , KREVCHIK, PV , ZAYTSEV, RV , EGOROV, IA , (2016) THE EFFECTS OF TWO-DIMENSIONAL BIFURCATIONS AND QUANTUM BEATS IN A SYSTEM OF COMBINED ATOMIC FORCE AND SCANNING TUNNELING MICROSCOPES WITH QUANTUM DOTS.MOSCOW UNIVERSITY PHYSICS BULLETIN. VOL. 71. ISSUE 6. P. 545 -555 | 7 | 44% | 0 |
3 | TIKHOV, SV , GORSHKOV, ON , KORYAZHKINA, MN , KASATKIN, AP , ANTONOV, IN , VIHROVA, OV , MOROZOV, AI , (2016) PHYSICAL PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES BASED ON N-GAAS WITH INAS QUANTUM DOTS DEPOSITED ONTO THE SURFACE OF AN N-GAAS LAYER.SEMICONDUCTORS. VOL. 50. ISSUE 12. P. 1589 -1594 | 7 | 44% | 0 |
4 | ZHUKOVSKY, VC , KREVCHIK, VD , SEMENOV, MB , FILATOV, DO , ZAYTSEV, RV , KREVCHIK, PV , EGOROV, IA , VASILYEV, VA , (2015) THE FEATURES OF TUNNELING CURRENT-VOLTAGE CHARACTERISTICS IN A COMBINED ATOMIC FORCE/SCANNING TUNNELING MICROSCOPE SYSTEM WITH QUANTUM DOTS OF COLLOIDAL GOLD.MOSCOW UNIVERSITY PHYSICS BULLETIN. VOL. 70. ISSUE 4. P. 271 -276 | 7 | 44% | 0 |
5 | YAFAROV, RK , SHANYGIN, VY , (2014) FORMATION OF CARBON SUBNANOSIZE MASKING COATINGS ON SILICON (100) IN LOW-PRESSURE MICROWAVE PLASMA.TECHNICAL PHYSICS LETTERS. VOL. 40. ISSUE 4. P. 280-283 | 3 | 100% | 2 |
6 | TIKHOV, SV , (2012) SMALL-SIGNAL FIELD EFFECT IN GAAS/INAS QUANTUM-DOT HETEROSTRUCTURES.SEMICONDUCTORS. VOL. 46. ISSUE 10. P. 1274-1280 | 5 | 63% | 0 |
7 | KARPOVICH, IA , LEVICHEV, SB , MOROZOV, SV , ZVONKOV, BN , FILATOV, DO , GORSHKOV, AP , ERMAKOV, AY , (2002) PHOTOELECTRIC SPECTROSCOPY OF INAS/GAAS QUANTUM DOT STRUCTURES IN A SEMICONDUCTOR/ELECTROLYTE SYSTEM.NANOTECHNOLOGY. VOL. 13. ISSUE 4. P. 445-450 | 7 | 58% | 2 |
8 | SHANYGIN, VY , YAFAROV, RK , (2013) NANOMORPHOLOGICAL CHARACTERISTICS OF THE SINGLE-CRYSTAL SI(100) SURFACE SUBJECTED TO MICROWAVE PLASMA PROCESSING AT WEAK ADSORPTION.TECHNICAL PHYSICS. VOL. 58. ISSUE 4. P. 557-562 | 3 | 100% | 1 |
9 | SHANYGIN, VY , YAFAROV, RK , (2013) RELAXATION-INDUCED SELF-ORGANIZATION OF A SILICON CRYSTAL SURFACE UNDER MICROWAVE PLASMA MICROMACHINING.SEMICONDUCTORS. VOL. 47. ISSUE 4. P. 469-480 | 3 | 100% | 0 |
10 | KARPOVICH, IA , GORSHKOV, AP , LEVICHEV, SB , MOROZOV, SV , ZVONKOV, BN , FILATOV, DO , (2001) PHOTOELECTRIC SPECTROSCOPY OF INAS/GAAS QUANTUM DOT HETEROSTRUCTURES IN A SEMICONDUCTOR/ELECTROLYTE SYSTEM.SEMICONDUCTORS. VOL. 35. ISSUE 5. P. 543-549 | 6 | 60% | 5 |
Classes with closest relation at Level 1 |