Class information for:
Level 1: EPITAXIAL REACTOR//MOCVD REACTOR//PLANETARY REACTOR

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
10828 1032 21.7 54%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
3506 2             RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//WAFER TEMPERATURE UNIFORMITY 1431
10828 1                   EPITAXIAL REACTOR//MOCVD REACTOR//PLANETARY REACTOR 1032

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 EPITAXIAL REACTOR authKW 88761 0% 100% 3
2 MOCVD REACTOR authKW 88761 0% 100% 3
3 PLANETARY REACTOR authKW 78896 0% 67% 4
4 JOURNAL OF CRYSTAL GROWTH journal 70247 26% 1% 271
5 PARASITIC DEPOSITION authKW 66569 0% 75% 3
6 SIEMENS PROCESS authKW 66569 0% 75% 3
7 PARASITIC REACTION authKW 61634 0% 42% 5
8 METALORGANIC VAPOR PHASE EPITAXY authKW 59537 4% 4% 46
9 EPITAXIAL SILICON TECHNOL address 59174 0% 100% 2
10 LPCVD FURNACE authKW 59174 0% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Crystallography 12745 30% 0% 311
2 Physics, Applied 5586 47% 0% 490
3 Materials Science, Coatings & Films 4967 16% 0% 166
4 Materials Science, Multidisciplinary 3283 40% 0% 416
5 Electrochemistry 1608 11% 0% 114
6 Engineering, Chemical 419 10% 0% 100
7 Thermodynamics 273 5% 0% 49
8 Physics, Condensed Matter 273 11% 0% 109
9 Physics, Multidisciplinary 131 7% 0% 71
10 Engineering, Mechanical 99 4% 0% 42

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 EPITAXIAL SILICON TECHNOL 59174 0% 100% 2
2 TOURISM DESIGN 59174 0% 100% 2
3 FUNDAMENTAL SCI DEF WIDE BAND G SE 39448 0% 67% 2
4 NANOELE SYST INFORMAT TECHNOL 33282 0% 38% 3
5 AUTOMOBILE HI TECH 29587 0% 100% 1
6 CANMET MET TECHNOL S 29587 0% 100% 1
7 CHEM OPTOELECT MAT CHEM 29587 0% 100% 1
8 CNRS URA 1109 LMGP 29587 0% 100% 1
9 COMPOUND SEMICOND PROJECT 29587 0% 100% 1
10 DEGREE PROGRAM IND SAFETY RISK MANAGEMENT 29587 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF CRYSTAL GROWTH 70247 26% 1% 271
2 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 10177 10% 0% 102
3 JOURNAL DE PHYSIQUE IV 5507 4% 0% 44
4 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 3175 1% 1% 13
5 CRYSTAL RESEARCH AND TECHNOLOGY 3038 3% 0% 26
6 CHEMICAL VAPOR DEPOSITION 1889 1% 1% 8
7 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 1830 1% 1% 9
8 PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS 1650 1% 1% 6
9 PHILIPS TECHNICAL REVIEW 1475 0% 3% 2
10 REVUE INTERNATIONALE DES HAUTES TEMPERATURES ET DES REFRACTAIRES 1287 0% 1% 3

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 EPITAXIAL REACTOR 88761 0% 100% 3 Search EPITAXIAL+REACTOR Search EPITAXIAL+REACTOR
2 MOCVD REACTOR 88761 0% 100% 3 Search MOCVD+REACTOR Search MOCVD+REACTOR
3 PLANETARY REACTOR 78896 0% 67% 4 Search PLANETARY+REACTOR Search PLANETARY+REACTOR
4 PARASITIC DEPOSITION 66569 0% 75% 3 Search PARASITIC+DEPOSITION Search PARASITIC+DEPOSITION
5 SIEMENS PROCESS 66569 0% 75% 3 Search SIEMENS+PROCESS Search SIEMENS+PROCESS
6 PARASITIC REACTION 61634 0% 42% 5 Search PARASITIC+REACTION Search PARASITIC+REACTION
7 METALORGANIC VAPOR PHASE EPITAXY 59537 4% 4% 46 Search METALORGANIC+VAPOR+PHASE+EPITAXY Search METALORGANIC+VAPOR+PHASE+EPITAXY
8 LPCVD FURNACE 59174 0% 100% 2 Search LPCVD+FURNACE Search LPCVD+FURNACE
9 MULTIWAFER REACTOR 59174 0% 100% 2 Search MULTIWAFER+REACTOR Search MULTIWAFER+REACTOR
10 SILICON EPITAXIAL GROWTH 56892 0% 38% 5 Search SILICON+EPITAXIAL+GROWTH Search SILICON+EPITAXIAL+GROWTH

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 HOLSTEIN, WL , (1992) DESIGN AND MODELING OF CHEMICAL VAPOR-DEPOSITION REACTORS.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 24. ISSUE 2. P. 111-211 75 78% 28
2 MASI, M , DI STANISLAO, M , VENERONI, A , (2003) FLUID-DYNAMICS DURING VAPOR EPITAXY AND MODELING.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 47. ISSUE 2-3. P. 239 -270 32 94% 8
3 MASI, M , KOMMU, S , (2001) EPITAXIAL GROWTH MODELING.SILICON EPITAXY. VOL. 72. ISSUE . P. 185 -224 40 77% 3
4 KLEIJN, CR , DORSMAN, R , KUIJLAARS, KJ , OKKERSE, M , VAN SANTEN, H , (2007) MULTI-SCALE MODELING OF CHEMICAL VAPOR DEPOSITION PROCESSES FOR THIN FILM TECHNOLOGY.JOURNAL OF CRYSTAL GROWTH. VOL. 303. ISSUE 1. P. 362 -380 57 40% 32
5 KLEIJN, CR , (2000) COMPUTATIONAL MODELING OF TRANSPORT PHENOMENA AND DETAILED CHEMISTRY IN CHEMICAL VAPOR DEPOSITION - A BENCHMARK SOLUTION.THIN SOLID FILMS. VOL. 365. ISSUE 2. P. 294 -306 36 67% 55
6 ZHANG, Z , FANG, HS , YAO, QX , YAN, H , GAN, ZY , (2016) SPECIES TRANSPORT AND CHEMICAL REACTION IN A MOCVD REACTOR AND THEIR INFLUENCE ON THE GAN GROWTH UNIFORMITY.JOURNAL OF CRYSTAL GROWTH. VOL. 454. ISSUE . P. 87 -95 20 83% 0
7 ZHANG, Z , FANG, HS , YAN, H , JIANG, ZM , ZHENG, J , GAN, ZY , (2015) INFLUENCING FACTORS OF GAN GROWTH UNIFORMITY THROUGH ORTHOGONAL TEST ANALYSIS.APPLIED THERMAL ENGINEERING. VOL. 91. ISSUE . P. 53 -61 20 80% 3
8 GKINIS, PA , AVIZIOTIS, IG , KORONAKI, ED , GAKIS, GP , BOUDOUVIS, AG , (2017) THE EFFECTS OF FLOW MULTIPLICITY ON GAN DEPOSITION IN A ROTATING DISK CVD REACTOR.JOURNAL OF CRYSTAL GROWTH. VOL. 458. ISSUE . P. 140 -148 16 100% 0
9 HABUKA, H , TSUJI, M , (2012) SILICON EPITAXIAL GROWTH RATE AND TRANSPORT PHENOMENA IN A VERTICAL STACKED-TYPE MULTI-WAFER REACTOR.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 2. P. - 20 87% 0
10 ABEDI, S , FARHADI, F , BOOZARJOMEHRY, RB , (2013) INTEGRATION OF CFD AND NELDER-MEAD ALGORITHM FOR OPTIMIZATION OF MOCVD PROCESS IN AN ATMOSPHERIC PRESSURE VERTICAL ROTATING DISK REACTOR.INTERNATIONAL COMMUNICATIONS IN HEAT AND MASS TRANSFER. VOL. 43. ISSUE . P. 138-145 20 80% 5

Classes with closest relation at Level 1


Rank Class id link
1 7126 ATOMIC LAYER DOPING//SELECTIVE EPITAXIAL GROWTH//SI EPITAXIAL GROWTH
2 27838 PAFC SUBSTRATE//RF GLOW DISCHARGED PLASMA//SOLAR GRADE SILICON PRODUCTION
3 1618 JOURNAL OF CRYSTAL GROWTH//TRIMETHYLINDIUM//MOMBE
4 21961 RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//SILICON NANOELECT
5 23247 METHYLTRICHLOROSILANE//HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION//ADV FIB COMPOSIT
6 15176 MIXED CONVECTION//DIENCA//INCLINED DUCT
7 11111 TEOS PECVD//TEOS//FEATURE SCALE
8 7541 SPIRO SI HETEROCYCLIC RING COMPOUND//O ATOMS//CL2GESI
9 25406 MSOS O P STRUCTURE//SI2H6 GAS//SEMI INSULATING POLYCRYSTALLINE SILICON
10 16292 CVD W//TUNGSTEN THIN FILMS//CVD IRON

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