Class information for:
Level 1: TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//SWAMP

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
771 3089 21.3 59%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
1826 2             TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 6197
771 1                   TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//SWAMP 3089

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 TRANSIENT ENHANCED DIFFUSION authKW 566131 2% 81% 71
2 SHALLOW JUNCTION authKW 225116 2% 38% 60
3 SWAMP address 202448 1% 79% 26
4 ULTRA SHALLOW JUNCTION authKW 158086 1% 40% 40
5 IMETEM address 104491 1% 24% 44
6 PAIR DIFFUSION MODEL authKW 98833 0% 100% 10
7 ION IMPLANTAT GRP address 92235 0% 67% 14
8 BORON DIFFUSION authKW 81049 1% 37% 22
9 311 DEFECTS authKW 80053 0% 90% 9
10 MOLECULAR ION IMPLANTATION authKW 76021 0% 77% 10

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 22250 54% 0% 1675
2 Physics, Condensed Matter 6722 26% 0% 793
3 Nuclear Science & Technology 3540 11% 0% 326
4 Materials Science, Coatings & Films 2578 7% 0% 216
5 Physics, Nuclear 2553 9% 0% 286
6 Instruments & Instrumentation 2413 9% 0% 293
7 Engineering, Electrical & Electronic 1402 15% 0% 455
8 Physics, Atomic, Molecular & Chemical 1352 9% 0% 291
9 Materials Science, Multidisciplinary 1075 16% 0% 497
10 Electrochemistry 755 5% 0% 148

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SWAMP 202448 1% 79% 26
2 IMETEM 104491 1% 24% 44
3 ION IMPLANTAT GRP 92235 0% 67% 14
4 MATIS 74881 1% 16% 46
5 PARAMETR CONDUCT IMPLANT 49417 0% 100% 5
6 IT COMPUTAT ELECT 29650 0% 100% 3
7 SEH RD 29650 0% 100% 3
8 IMM SEZ CATANIA 28741 0% 36% 8
9 LAAS 22348 2% 3% 70
10 FRONT END PROD 22236 0% 75% 3

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 23900 9% 1% 278
2 APPLIED PHYSICS LETTERS 19185 15% 0% 466
3 JOURNAL OF APPLIED PHYSICS 16794 14% 0% 429
4 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 11487 3% 1% 93
5 DEFECT AND DIFFUSION FORUM 8594 1% 4% 20
6 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 6627 5% 0% 144
7 DEFECT AND DIFFUSION FORUM/JOURNAL 4845 0% 4% 13
8 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 4461 3% 1% 88
9 RADIATION EFFECTS LETTERS 2847 0% 4% 8
10 IEEE TRANSACTIONS ON ELECTRON DEVICES 2809 2% 0% 67

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 TRANSIENT ENHANCED DIFFUSION 566131 2% 81% 71 Search TRANSIENT+ENHANCED+DIFFUSION Search TRANSIENT+ENHANCED+DIFFUSION
2 SHALLOW JUNCTION 225116 2% 38% 60 Search SHALLOW+JUNCTION Search SHALLOW+JUNCTION
3 ULTRA SHALLOW JUNCTION 158086 1% 40% 40 Search ULTRA+SHALLOW+JUNCTION Search ULTRA+SHALLOW+JUNCTION
4 PAIR DIFFUSION MODEL 98833 0% 100% 10 Search PAIR+DIFFUSION+MODEL Search PAIR+DIFFUSION+MODEL
5 BORON DIFFUSION 81049 1% 37% 22 Search BORON+DIFFUSION Search BORON+DIFFUSION
6 311 DEFECTS 80053 0% 90% 9 Search 311+DEFECTS Search 311+DEFECTS
7 MOLECULAR ION IMPLANTATION 76021 0% 77% 10 Search MOLECULAR+ION+IMPLANTATION Search MOLECULAR+ION+IMPLANTATION
8 PRE AMORPHIZATION 65882 0% 67% 10 Search PRE+AMORPHIZATION Search PRE+AMORPHIZATION
9 END OF RANGE DEFECTS 57499 0% 73% 8 Search END+OF+RANGE+DEFECTS Search END+OF+RANGE+DEFECTS
10 DOPANT DIFFUSION 55186 1% 31% 18 Search DOPANT+DIFFUSION Search DOPANT+DIFFUSION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 PELAZ, L , MARQUES, LA , ABOY, M , LOPEZ, P , SANTOS, I , (2009) FRONT-END PROCESS MODELING IN SILICON.EUROPEAN PHYSICAL JOURNAL B. VOL. 72. ISSUE 3. P. 323 -359 174 59% 18
2 ABOY, M , SANTOS, I , PELAZ, L , MARQUES, LA , LOPEZ, P , (2014) MODELING OF DEFECTS, DOPANT DIFFUSION AND CLUSTERING IN SILICON.JOURNAL OF COMPUTATIONAL ELECTRONICS. VOL. 13. ISSUE 1. P. 40 -58 109 80% 5
3 SHAO, L , LIU, JR , CHEN, QY , CHU, WK , (2003) BORON DIFFUSION IN SILICON: THE ANOMALIES AND CONTROL BY POINT DEFECT ENGINEERING.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 42. ISSUE 3-4. P. 65 -114 118 72% 46
4 JAIN, SC , SCHOENMAKER, W , LINDSAY, R , STOLK, PA , DECOUTERE, S , WILLANDER, M , MAES, HE , (2002) TRANSIENT ENHANCED DIFFUSION OF BORON IN SI.JOURNAL OF APPLIED PHYSICS. VOL. 91. ISSUE 11. P. 8919 -8941 75 90% 178
5 FAHEY, PM , GRIFFIN, PB , PLUMMER, JD , (1989) POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON.REVIEWS OF MODERN PHYSICS. VOL. 61. ISSUE 2. P. 289-384 83 64% 975
6 STOLK, PA , GOSSMANN, HJ , EAGLESHAM, DJ , JACOBSON, DC , RAFFERTY, CS , GILMER, GH , JARAIZ, M , POATE, JM , LUFTMAN, HS , HAYNES, TE , (1997) PHYSICAL MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 81. ISSUE 9. P. 6031-6050 58 83% 474
7 VELICHKO, OI , KAVALIOVA, AP , (2012) MODELING OF THE TRANSIENT INTERSTITIAL DIFFUSION OF IMPLANTED ATOMS DURING LOW-TEMPERATURE ANNEALING OF SILICON SUBSTRATES.PHYSICA B-CONDENSED MATTER. VOL. 407. ISSUE 12. P. 2176 -2184 51 94% 1
8 PICHLER, P , (2015) ROLE OF DEFECTS IN THE DOPANT DIFFUSION IN SI.DEFECTS IN SEMICONDUCTORS. VOL. 91. ISSUE . P. 1 -46 52 85% 0
9 MIRABELLA, S , DE SALVADOR, D , NAPOLITANI, E , BRUNO, E , PRIOLO, F , (2013) MECHANISMS OF BORON DIFFUSION IN SILICON AND GERMANIUM.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 3. P. - 64 60% 32
10 WOLF, FA , MARTINEZ-LIMIA, A , PICHLER, P , (2013) A COMPREHENSIVE MODEL FOR THE DIFFUSION OF BORON IN SILICON IN PRESENCE OF FLUORINE.SOLID-STATE ELECTRONICS. VOL. 87. ISSUE . P. 4 -10 44 98% 1

Classes with closest relation at Level 1


Rank Class id link
1 30685 ULTRASHALLOW JUNCTIONS//A REDUCTION METHOD//BORON CHEMICAL VAPOR DEPOSITION
2 14069 GERMANIUM//L DLTS//CNR IMM MATIS
3 8986 IBIEC//AMORPHOUS POCKET//SOLID PHASE EPITAXIAL GROWTH
4 36089 CHARACTERISTIC TESTING METHOD//DIFFUS TEAM//GATE TURN OFF GTO THYRISTORS
5 35867 ELECTRONIC RADIATION//ELECTRON CHANNELING EFFECT//RUMENTAT MESU
6 11988 SMART CUT//ION CUT//GETTERING
7 11344 NEUTRON DEPTH PROFILING//RANGE PARAMETERS//LATERAL STRAGGLING
8 6817 SOVIET PHYSICS SEMICONDUCTORS-USSR//LIFETIME CONTROL//DLTS
9 21308 BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION
10 21285 SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION//DYNAMIC RANDOM ACCESS MEMORY

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