Class information for:
Level 1: ULTRASHALLOW JUNCTIONS//A REDUCTION METHOD//BORON CHEMICAL VAPOR DEPOSITION

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
30685 165 16.2 59%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
1826 2             TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 6197
30685 1                   ULTRASHALLOW JUNCTIONS//A REDUCTION METHOD//BORON CHEMICAL VAPOR DEPOSITION 165

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 ULTRASHALLOW JUNCTIONS authKW 555185 4% 50% 6
2 A REDUCTION METHOD authKW 370127 1% 100% 2
3 BORON CHEMICAL VAPOR DEPOSITION authKW 370127 1% 100% 2
4 DIBORANE B2H6 authKW 370127 1% 100% 2
5 GE DIODES authKW 370127 1% 100% 2
6 HIGH OHMIC RESISTORS authKW 370127 1% 100% 2
7 LONG RANGE ORDER INTERACTION authKW 370127 1% 100% 2
8 PHOSPHINE ADSORPTION authKW 370127 1% 100% 2
9 PUREB authKW 370127 1% 100% 2
10 SI PHOTODIODES authKW 246750 1% 67% 2

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Physics, Applied 1321 57% 0% 94
2 Materials Science, Coatings & Films 538 13% 0% 22
3 Engineering, Electrical & Electronic 305 27% 0% 44
4 Physics, Condensed Matter 165 18% 0% 30
5 Instruments & Instrumentation 101 8% 0% 14
6 Nuclear Science & Technology 99 8% 0% 13
7 Materials Science, Multidisciplinary 94 19% 0% 32
8 Electrochemistry 41 5% 0% 8
9 Physics, Nuclear 41 5% 0% 9
10 Physics, Atomic, Molecular & Chemical 24 6% 0% 10

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 F ALLGEMEINE PHYS 185064 1% 100% 1
2 LIFE SCI ENVIRONM ENGN 185064 1% 100% 1
3 MODERN LIBERAL ARTS 185064 1% 100% 1
4 SILICON DEVICE INTEGRAT GRP 185064 1% 100% 1
5 ZEMRIS 185064 1% 100% 1
6 HYBRID ELECT SYST 92529 1% 25% 2
7 ECTM DIMES 92527 2% 17% 3
8 STATE ADV PHOTON MAT DEVICE 61687 1% 33% 1
9 SIMULAT SCI 57109 3% 6% 5
10 ELECT ENGN EWI 46264 1% 25% 1

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 ECS SOLID STATE LETTERS 8240 2% 1% 4
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 1743 7% 0% 12
3 IEEE ELECTRON DEVICE LETTERS 998 4% 0% 7
4 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 631 4% 0% 7
5 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 622 3% 0% 5
6 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 567 1% 0% 2
7 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 474 5% 0% 9
8 SOLID-STATE ELECTRONICS 462 3% 0% 5
9 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 462 5% 0% 9
10 MICROELECTRONIC ENGINEERING 286 2% 0% 4

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 ULTRASHALLOW JUNCTIONS 555185 4% 50% 6 Search ULTRASHALLOW+JUNCTIONS Search ULTRASHALLOW+JUNCTIONS
2 A REDUCTION METHOD 370127 1% 100% 2 Search A+REDUCTION+METHOD Search A+REDUCTION+METHOD
3 BORON CHEMICAL VAPOR DEPOSITION 370127 1% 100% 2 Search BORON+CHEMICAL+VAPOR+DEPOSITION Search BORON+CHEMICAL+VAPOR+DEPOSITION
4 DIBORANE B2H6 370127 1% 100% 2 Search DIBORANE+B2H6 Search DIBORANE+B2H6
5 GE DIODES 370127 1% 100% 2 Search GE+DIODES Search GE+DIODES
6 HIGH OHMIC RESISTORS 370127 1% 100% 2 Search HIGH+OHMIC+RESISTORS Search HIGH+OHMIC+RESISTORS
7 LONG RANGE ORDER INTERACTION 370127 1% 100% 2 Search LONG+RANGE+ORDER+INTERACTION Search LONG+RANGE+ORDER+INTERACTION
8 PHOSPHINE ADSORPTION 370127 1% 100% 2 Search PHOSPHINE+ADSORPTION Search PHOSPHINE+ADSORPTION
9 PUREB 370127 1% 100% 2 Search PUREB Search PUREB
10 SI PHOTODIODES 246750 1% 67% 2 Search SI+PHOTODIODES Search SI+PHOTODIODES

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 MOHAMMADI, V , GOLSHANI, N , MOK, KRC , DE BOER, WB , DERAKHSHANDEH, J , NANVER, LK , (2014) TEMPERATURE DEPENDENCY OF THE KINETICS OF PUREB CVD DEPOSITION OVER PATTERNED SI/SIO2 SURFACES.MICROELECTRONIC ENGINEERING. VOL. 125. ISSUE . P. 45 -50 8 89% 3
2 MOHAMMADIA, V , NIHTIANOV, S , (2016) LATERAL GAS PHASE DIFFUSION LENGTH OF BORON ATOMS OVER SI/B SURFACES DURING CVD OF PURE BORON LAYERS.AIP ADVANCES. VOL. 6. ISSUE 2. P. - 6 100% 0
3 NANVER, LK , QI, L , MOHAMMADI, V , MOK, KRM , DE BOER, WB , GOLSHANI, N , SAMMAK, A , SCHOLTES, TLM , GOTTWALD, A , KROTH, U , ET AL (2014) ROBUST UV/VUV/EUV PUREB PHOTODIODE DETECTOR TECHNOLOGY WITH HIGH CMOS COMPATIBILITY.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 20. ISSUE 6. P. - 11 48% 0
4 CONSIGLIO, S , CLARK, RD , O'MEARA, D , WAJDA, CS , TAPILY, K , LEUSINK, GJ , (2016) COMPARISON OF B2O3 AND BN DEPOSITED BY ATOMIC LAYER DEPOSITION FOR FORMING ULTRASHALLOW DOPANT REGIONS BY SOLID STATE DIFFUSION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 34. ISSUE 1. P. - 11 39% 1
5 SARUBBI, F , SCHOLTES, TLM , NANVER, LK , (2010) CHEMICAL VAPOR DEPOSITION OF ALPHA-BORON LAYERS ON SILICON FOR CONTROLLED NANOMETER-DEEP P (+) N JUNCTION FORMATION.JOURNAL OF ELECTRONIC MATERIALS. VOL. 39. ISSUE 2. P. 162 -173 7 70% 29
6 KIYOTA, Y , INADA, T , (2001) STICKING COEFFICIENT OF BORON AND PHOSPHORUS ON SILICON DURING VAPOR-PHASE DOPING.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 19. ISSUE 5. P. 2441 -2445 11 50% 8
7 SARUBBI, F , NANVER, LK , SCHOLTES, TLM , (2010) HIGH EFFECTIVE GUMMEL NUMBER OF CVD BORON LAYERS IN ULTRASHALLOW P(+)N DIODE CONFIGURATIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 6. P. 1269-1278 8 50% 22
8 YAMAUCHI, J , YOSHIMOTO, Y , SUWA, Y , (2016) X-RAY PHOTOELECTRON SPECTROSCOPY ANALYSIS OF BORON DEFECTS IN SILICON CRYSTAL: A FIRST-PRINCIPLES STUDY.JOURNAL OF APPLIED PHYSICS. VOL. 119. ISSUE 17. P. - 10 36% 0
9 OHMORI, K , ESASHI, N , TAKAO, M , SATO, D , HAYAFUJI, Y , (2005) A MECHANISM FOR HOLE GENERATION BY OCTAHEDRAL B-6 CLUSTERS IN SILICON.APPLIED PHYSICS LETTERS. VOL. 87. ISSUE 11. P. - 6 75% 6
10 YAMAUCHI, J , YOSHIMOTO, Y , SUWA, Y , (2011) IDENTIFICATION OF BORON CLUSTERS IN SILICON CRYSTAL BY B1S CORE-LEVEL X-RAY PHOTOELECTRON SPECTROSCOPY: A FIRST-PRINCIPLES STUDY.APPLIED PHYSICS LETTERS. VOL. 99. ISSUE 19. P. - 8 44% 4

Classes with closest relation at Level 1



Rank Class id link
1 771 TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//SWAMP
2 29312 CROSS KELVIN RESISTOR CKR//CROSS BRIDGE KELVIN RESISTOR CBKR//POLYMETAL
3 7126 ATOMIC LAYER DOPING//SELECTIVE EPITAXIAL GROWTH//SI EPITAXIAL GROWTH
4 7303 BIPOLAR TRANSISTORS//IEEE TRANSACTIONS ON ELECTRON DEVICES//POLYSILICON EMITTER
5 26157 VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX
6 7039 METROLOGIA//CRYOGENIC RADIOMETER//SPECTRAL RESPONSIVITY
7 29899 ARTIFICIAL RETINA LSI//2 D ELECTRON GAS CHARGE COUPLED DEVICES 2DEG CCDS//ARTIFICIAL RETINA LARGE SCALE INTEGRATION
8 21961 RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//SILICON NANOELECT
9 8986 IBIEC//AMORPHOUS POCKET//SOLID PHASE EPITAXIAL GROWTH
10 27961 RESONANT COHERENT EXCITATION//ALIGNED CRYSTAL TARGET//E1 TRANSITIONS AND E2 TRANSITIONS

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