Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
30685 | 165 | 16.2 | 59% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ULTRASHALLOW JUNCTIONS | authKW | 555185 | 4% | 50% | 6 |
2 | A REDUCTION METHOD | authKW | 370127 | 1% | 100% | 2 |
3 | BORON CHEMICAL VAPOR DEPOSITION | authKW | 370127 | 1% | 100% | 2 |
4 | DIBORANE B2H6 | authKW | 370127 | 1% | 100% | 2 |
5 | GE DIODES | authKW | 370127 | 1% | 100% | 2 |
6 | HIGH OHMIC RESISTORS | authKW | 370127 | 1% | 100% | 2 |
7 | LONG RANGE ORDER INTERACTION | authKW | 370127 | 1% | 100% | 2 |
8 | PHOSPHINE ADSORPTION | authKW | 370127 | 1% | 100% | 2 |
9 | PUREB | authKW | 370127 | 1% | 100% | 2 |
10 | SI PHOTODIODES | authKW | 246750 | 1% | 67% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 1321 | 57% | 0% | 94 |
2 | Materials Science, Coatings & Films | 538 | 13% | 0% | 22 |
3 | Engineering, Electrical & Electronic | 305 | 27% | 0% | 44 |
4 | Physics, Condensed Matter | 165 | 18% | 0% | 30 |
5 | Instruments & Instrumentation | 101 | 8% | 0% | 14 |
6 | Nuclear Science & Technology | 99 | 8% | 0% | 13 |
7 | Materials Science, Multidisciplinary | 94 | 19% | 0% | 32 |
8 | Electrochemistry | 41 | 5% | 0% | 8 |
9 | Physics, Nuclear | 41 | 5% | 0% | 9 |
10 | Physics, Atomic, Molecular & Chemical | 24 | 6% | 0% | 10 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | F ALLGEMEINE PHYS | 185064 | 1% | 100% | 1 |
2 | LIFE SCI ENVIRONM ENGN | 185064 | 1% | 100% | 1 |
3 | MODERN LIBERAL ARTS | 185064 | 1% | 100% | 1 |
4 | SILICON DEVICE INTEGRAT GRP | 185064 | 1% | 100% | 1 |
5 | ZEMRIS | 185064 | 1% | 100% | 1 |
6 | HYBRID ELECT SYST | 92529 | 1% | 25% | 2 |
7 | ECTM DIMES | 92527 | 2% | 17% | 3 |
8 | STATE ADV PHOTON MAT DEVICE | 61687 | 1% | 33% | 1 |
9 | SIMULAT SCI | 57109 | 3% | 6% | 5 |
10 | ELECT ENGN EWI | 46264 | 1% | 25% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ECS SOLID STATE LETTERS | 8240 | 2% | 1% | 4 |
2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1743 | 7% | 0% | 12 |
3 | IEEE ELECTRON DEVICE LETTERS | 998 | 4% | 0% | 7 |
4 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 631 | 4% | 0% | 7 |
5 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 622 | 3% | 0% | 5 |
6 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 567 | 1% | 0% | 2 |
7 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 474 | 5% | 0% | 9 |
8 | SOLID-STATE ELECTRONICS | 462 | 3% | 0% | 5 |
9 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 462 | 5% | 0% | 9 |
10 | MICROELECTRONIC ENGINEERING | 286 | 2% | 0% | 4 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ULTRASHALLOW JUNCTIONS | 555185 | 4% | 50% | 6 | Search ULTRASHALLOW+JUNCTIONS | Search ULTRASHALLOW+JUNCTIONS |
2 | A REDUCTION METHOD | 370127 | 1% | 100% | 2 | Search A+REDUCTION+METHOD | Search A+REDUCTION+METHOD |
3 | BORON CHEMICAL VAPOR DEPOSITION | 370127 | 1% | 100% | 2 | Search BORON+CHEMICAL+VAPOR+DEPOSITION | Search BORON+CHEMICAL+VAPOR+DEPOSITION |
4 | DIBORANE B2H6 | 370127 | 1% | 100% | 2 | Search DIBORANE+B2H6 | Search DIBORANE+B2H6 |
5 | GE DIODES | 370127 | 1% | 100% | 2 | Search GE+DIODES | Search GE+DIODES |
6 | HIGH OHMIC RESISTORS | 370127 | 1% | 100% | 2 | Search HIGH+OHMIC+RESISTORS | Search HIGH+OHMIC+RESISTORS |
7 | LONG RANGE ORDER INTERACTION | 370127 | 1% | 100% | 2 | Search LONG+RANGE+ORDER+INTERACTION | Search LONG+RANGE+ORDER+INTERACTION |
8 | PHOSPHINE ADSORPTION | 370127 | 1% | 100% | 2 | Search PHOSPHINE+ADSORPTION | Search PHOSPHINE+ADSORPTION |
9 | PUREB | 370127 | 1% | 100% | 2 | Search PUREB | Search PUREB |
10 | SI PHOTODIODES | 246750 | 1% | 67% | 2 | Search SI+PHOTODIODES | Search SI+PHOTODIODES |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | MOHAMMADI, V , GOLSHANI, N , MOK, KRC , DE BOER, WB , DERAKHSHANDEH, J , NANVER, LK , (2014) TEMPERATURE DEPENDENCY OF THE KINETICS OF PUREB CVD DEPOSITION OVER PATTERNED SI/SIO2 SURFACES.MICROELECTRONIC ENGINEERING. VOL. 125. ISSUE . P. 45 -50 | 8 | 89% | 3 |
2 | MOHAMMADIA, V , NIHTIANOV, S , (2016) LATERAL GAS PHASE DIFFUSION LENGTH OF BORON ATOMS OVER SI/B SURFACES DURING CVD OF PURE BORON LAYERS.AIP ADVANCES. VOL. 6. ISSUE 2. P. - | 6 | 100% | 0 |
3 | NANVER, LK , QI, L , MOHAMMADI, V , MOK, KRM , DE BOER, WB , GOLSHANI, N , SAMMAK, A , SCHOLTES, TLM , GOTTWALD, A , KROTH, U , ET AL (2014) ROBUST UV/VUV/EUV PUREB PHOTODIODE DETECTOR TECHNOLOGY WITH HIGH CMOS COMPATIBILITY.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 20. ISSUE 6. P. - | 11 | 48% | 0 |
4 | CONSIGLIO, S , CLARK, RD , O'MEARA, D , WAJDA, CS , TAPILY, K , LEUSINK, GJ , (2016) COMPARISON OF B2O3 AND BN DEPOSITED BY ATOMIC LAYER DEPOSITION FOR FORMING ULTRASHALLOW DOPANT REGIONS BY SOLID STATE DIFFUSION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 34. ISSUE 1. P. - | 11 | 39% | 1 |
5 | SARUBBI, F , SCHOLTES, TLM , NANVER, LK , (2010) CHEMICAL VAPOR DEPOSITION OF ALPHA-BORON LAYERS ON SILICON FOR CONTROLLED NANOMETER-DEEP P (+) N JUNCTION FORMATION.JOURNAL OF ELECTRONIC MATERIALS. VOL. 39. ISSUE 2. P. 162 -173 | 7 | 70% | 29 |
6 | KIYOTA, Y , INADA, T , (2001) STICKING COEFFICIENT OF BORON AND PHOSPHORUS ON SILICON DURING VAPOR-PHASE DOPING.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 19. ISSUE 5. P. 2441 -2445 | 11 | 50% | 8 |
7 | SARUBBI, F , NANVER, LK , SCHOLTES, TLM , (2010) HIGH EFFECTIVE GUMMEL NUMBER OF CVD BORON LAYERS IN ULTRASHALLOW P(+)N DIODE CONFIGURATIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 6. P. 1269-1278 | 8 | 50% | 22 |
8 | YAMAUCHI, J , YOSHIMOTO, Y , SUWA, Y , (2016) X-RAY PHOTOELECTRON SPECTROSCOPY ANALYSIS OF BORON DEFECTS IN SILICON CRYSTAL: A FIRST-PRINCIPLES STUDY.JOURNAL OF APPLIED PHYSICS. VOL. 119. ISSUE 17. P. - | 10 | 36% | 0 |
9 | OHMORI, K , ESASHI, N , TAKAO, M , SATO, D , HAYAFUJI, Y , (2005) A MECHANISM FOR HOLE GENERATION BY OCTAHEDRAL B-6 CLUSTERS IN SILICON.APPLIED PHYSICS LETTERS. VOL. 87. ISSUE 11. P. - | 6 | 75% | 6 |
10 | YAMAUCHI, J , YOSHIMOTO, Y , SUWA, Y , (2011) IDENTIFICATION OF BORON CLUSTERS IN SILICON CRYSTAL BY B1S CORE-LEVEL X-RAY PHOTOELECTRON SPECTROSCOPY: A FIRST-PRINCIPLES STUDY.APPLIED PHYSICS LETTERS. VOL. 99. ISSUE 19. P. - | 8 | 44% | 4 |
Classes with closest relation at Level 1 |