Class information for:
Level 1: SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION//DYNAMIC RANDOM ACCESS MEMORY

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
21285 425 13.4 39%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
1826 2             TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 6197
21285 1                   SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION//DYNAMIC RANDOM ACCESS MEMORY 425

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 SOFT ERROR MAPPING authKW 287388 1% 100% 4
2 HIGH ENERGY ION IMPLANTATION authKW 193974 2% 30% 9
3 DYNAMIC RANDOM ACCESS MEMORY authKW 167634 2% 33% 7
4 BURIED BARRIER LAYER authKW 143694 0% 100% 2
5 ION BEAM INDUCED CURRENT authKW 143694 0% 100% 2
6 ION INDUCED CURRENT authKW 143694 0% 100% 2
7 SECONDARY ELECTRON MAPPING authKW 143694 0% 100% 2
8 3 DIMENSIONAL ION TRAJECTORIES authKW 71847 0% 100% 1
9 AMBIPOLAR CURRENT TRANSPORT authKW 71847 0% 100% 1
10 BORON IMPLANTED authKW 71847 0% 100% 1

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Engineering, Electrical & Electronic 4569 60% 0% 255
2 Nuclear Science & Technology 3292 26% 0% 111
3 Physics, Applied 1543 40% 0% 168
4 Instruments & Instrumentation 681 13% 0% 56
5 Physics, Nuclear 518 11% 0% 47
6 Physics, Atomic, Molecular & Chemical 257 11% 0% 46
7 Physics, Condensed Matter 233 14% 0% 60
8 COMPUTER APPLICATIONS & CYBERNETICS 26 0% 0% 1
9 Microscopy 25 1% 0% 4
10 Nanoscience & Nanotechnology 24 4% 0% 15

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 COMPONENT DEV MFG 71847 0% 100% 1
2 INTEGRATED CIRCUIT SEMICOND DEVICE ENGN 71847 0% 100% 1
3 RADIAT BEAM MAT ENGN OPEN STATE EDUC COMMIS 71847 0% 100% 1
4 SILICON GERMANIUM DEV 71847 0% 100% 1
5 SPACE DEV ELECT 71847 0% 100% 1
6 ULTRA LARGE SCALE INTEGRAT 71847 0% 100% 1
7 LOG TECHNOL RD 35923 0% 50% 1
8 ESD PROD ENGN 23948 0% 33% 1
9 RELIABIL QUAL 23948 0% 33% 1
10 SWAMP 19589 1% 9% 3

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 21888 16% 0% 68
2 IEEE TRANSACTIONS ON NUCLEAR SCIENCE 16623 15% 0% 62
3 IEEE ELECTRON DEVICE LETTERS 5368 6% 0% 26
4 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 4365 10% 0% 44
5 SOLID-STATE ELECTRONICS 3832 5% 0% 23
6 SOVIET PHYSICS SEMICONDUCTORS-USSR 2505 3% 0% 14
7 IEEE JOURNAL OF SOLID-STATE CIRCUITS 2496 4% 0% 17
8 IEEE CIRCUITS AND DEVICES MAGAZINE 2049 0% 1% 2
9 TOSHIBA REVIEW 1840 0% 3% 1
10 ISSCC DIGEST OF TECHNICAL PAPERS 1631 0% 2% 1

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 SOFT ERROR MAPPING 287388 1% 100% 4 Search SOFT+ERROR+MAPPING Search SOFT+ERROR+MAPPING
2 HIGH ENERGY ION IMPLANTATION 193974 2% 30% 9 Search HIGH+ENERGY+ION+IMPLANTATION Search HIGH+ENERGY+ION+IMPLANTATION
3 DYNAMIC RANDOM ACCESS MEMORY 167634 2% 33% 7 Search DYNAMIC+RANDOM+ACCESS+MEMORY Search DYNAMIC+RANDOM+ACCESS+MEMORY
4 BURIED BARRIER LAYER 143694 0% 100% 2 Search BURIED+BARRIER+LAYER Search BURIED+BARRIER+LAYER
5 ION BEAM INDUCED CURRENT 143694 0% 100% 2 Search ION+BEAM+INDUCED+CURRENT Search ION+BEAM+INDUCED+CURRENT
6 ION INDUCED CURRENT 143694 0% 100% 2 Search ION+INDUCED+CURRENT Search ION+INDUCED+CURRENT
7 SECONDARY ELECTRON MAPPING 143694 0% 100% 2 Search SECONDARY+ELECTRON+MAPPING Search SECONDARY+ELECTRON+MAPPING
8 3 DIMENSIONAL ION TRAJECTORIES 71847 0% 100% 1 Search 3+DIMENSIONAL+ION+TRAJECTORIES Search 3+DIMENSIONAL+ION+TRAJECTORIES
9 AMBIPOLAR CURRENT TRANSPORT 71847 0% 100% 1 Search AMBIPOLAR+CURRENT+TRANSPORT Search AMBIPOLAR+CURRENT+TRANSPORT
10 BORON IMPLANTED 71847 0% 100% 1 Search BORON+IMPLANTED Search BORON+IMPLANTED

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 ALEXANDER, DR , (2003) TRANSIENT IONIZING RADIATION EFFECTS IN DEVICES AND CIRCUITS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 565 -582 35 66% 26
2 HSU, WC , LIANG, MS , CHEN, MC , (2002) IMPLANTATION INDUCED DEFECTS IN THE RETROGRADE WELL WITH A BURIED LAYER.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 149. ISSUE 3. P. G184 -G188 17 85% 2
3 KER, MD , WU, CY , (1994) TRANSIENT ANALYSIS OF SUBMICRON CMOS LATCHUP WITH A PHYSICAL CRITERION.SOLID-STATE ELECTRONICS. VOL. 37. ISSUE 2. P. 255-273 16 100% 1
4 NATION, SA , MASSENGILL, LW , MCMORROW, D , EVANS, L , STRAATVEIT, A , (2008) LASER DOSE-RATE SIMULATION TO COMPLEMENT LINAC DISCRETE DEVICE DATA.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 55. ISSUE 6. P. 3114-3121 8 89% 0
5 SKOROBOGATOV, PK , NIKIFOROV, AY , DEMIDOV, AA , (1998) A WAY TO IMPROVE DOSE RATE LASER SIMULATION ADEQUACY.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 45. ISSUE 6. P. 2659-2664 11 79% 2
6 KRIEGER, G , (1987) THE EFFECT OF EMITTER CURRENT CROWDING ON CMOS LATCHUP CHARACTERISTICS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 34. ISSUE 7. P. 1525-1532 14 100% 2
7 PAVAN, P , SPIAZZI, G , ZANONI, E , MUSCHITIELLO, M , CECCHETTI, M , (1991) LATCH-UP DC TRIGGERING AND HOLDING CHARACTERISTICS OF N-WELL, TWIN-TUB AND EPITAXIAL CMOS TECHNOLOGIES.IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS. VOL. 138. ISSUE 5. P. 604-612 15 75% 1
8 CANALI, C , GIANNINI, M , ZANONI, E , (1988) TECHNIQUES FOR LATCH-UP ANALYSIS IN CMOS ICS BASED ON SCANNING ELECTRON-MICROSCOPY.MICROELECTRONICS AND RELIABILITY. VOL. 28. ISSUE 1. P. 119-161 16 80% 0
9 HSU, WC , LIANG, MS , CHEN, SC , CHEN, MC , (2004) ANNEALING EFFECT ON BORON HIGH-ENERGY-ION-IMPLANTATION-INDUCED DEFECTS IN.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 43. ISSUE 8A. P. 5231-5234 9 75% 0
10 YANG, YH , WU, CY , (1989) THE EFFECT OF LAYOUT, SUBSTRATE WELL BIASES, AND TRIGGERING SOURCE LOCATION ON LATCHUP TRIGGERING CURRENTS IN BULK CMOS CIRCUITS.SOLID-STATE ELECTRONICS. VOL. 32. ISSUE 4. P. 269-279 11 100% 0

Classes with closest relation at Level 1



Rank Class id link
1 11344 NEUTRON DEPTH PROFILING//RANGE PARAMETERS//LATERAL STRAGGLING
2 18794 RFQ//RFQ ACCELERATOR//SFRFQ
3 10961 ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR//NANOELECT GIGASCALE SYST
4 21308 BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION
5 738 SOFT ERROR//SINGLE EVENT UPSET//SINGLE EVENT TRANSIENT
6 36089 CHARACTERISTIC TESTING METHOD//DIFFUS TEAM//GATE TURN OFF GTO THYRISTORS
7 8986 IBIEC//AMORPHOUS POCKET//SOLID PHASE EPITAXIAL GROWTH
8 17198 GATE CHARGING//PLASMA CHARGING DAMAGE//CHARGING DAMAGE
9 35821 CHRISTIAN HIGHER EDUCATION//DANISH MODERN//DBS KOMBI
10 21482 CARL EMILY FUCHS MICROELECT//CEFIM//HOT CARRIER LUMINESCENCE

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