Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
21285 | 425 | 13.4 | 39% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SOFT ERROR MAPPING | authKW | 287388 | 1% | 100% | 4 |
2 | HIGH ENERGY ION IMPLANTATION | authKW | 193974 | 2% | 30% | 9 |
3 | DYNAMIC RANDOM ACCESS MEMORY | authKW | 167634 | 2% | 33% | 7 |
4 | BURIED BARRIER LAYER | authKW | 143694 | 0% | 100% | 2 |
5 | ION BEAM INDUCED CURRENT | authKW | 143694 | 0% | 100% | 2 |
6 | ION INDUCED CURRENT | authKW | 143694 | 0% | 100% | 2 |
7 | SECONDARY ELECTRON MAPPING | authKW | 143694 | 0% | 100% | 2 |
8 | 3 DIMENSIONAL ION TRAJECTORIES | authKW | 71847 | 0% | 100% | 1 |
9 | AMBIPOLAR CURRENT TRANSPORT | authKW | 71847 | 0% | 100% | 1 |
10 | BORON IMPLANTED | authKW | 71847 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 4569 | 60% | 0% | 255 |
2 | Nuclear Science & Technology | 3292 | 26% | 0% | 111 |
3 | Physics, Applied | 1543 | 40% | 0% | 168 |
4 | Instruments & Instrumentation | 681 | 13% | 0% | 56 |
5 | Physics, Nuclear | 518 | 11% | 0% | 47 |
6 | Physics, Atomic, Molecular & Chemical | 257 | 11% | 0% | 46 |
7 | Physics, Condensed Matter | 233 | 14% | 0% | 60 |
8 | COMPUTER APPLICATIONS & CYBERNETICS | 26 | 0% | 0% | 1 |
9 | Microscopy | 25 | 1% | 0% | 4 |
10 | Nanoscience & Nanotechnology | 24 | 4% | 0% | 15 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | COMPONENT DEV MFG | 71847 | 0% | 100% | 1 |
2 | INTEGRATED CIRCUIT SEMICOND DEVICE ENGN | 71847 | 0% | 100% | 1 |
3 | RADIAT BEAM MAT ENGN OPEN STATE EDUC COMMIS | 71847 | 0% | 100% | 1 |
4 | SILICON GERMANIUM DEV | 71847 | 0% | 100% | 1 |
5 | SPACE DEV ELECT | 71847 | 0% | 100% | 1 |
6 | ULTRA LARGE SCALE INTEGRAT | 71847 | 0% | 100% | 1 |
7 | LOG TECHNOL RD | 35923 | 0% | 50% | 1 |
8 | ESD PROD ENGN | 23948 | 0% | 33% | 1 |
9 | RELIABIL QUAL | 23948 | 0% | 33% | 1 |
10 | SWAMP | 19589 | 1% | 9% | 3 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 21888 | 16% | 0% | 68 |
2 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 16623 | 15% | 0% | 62 |
3 | IEEE ELECTRON DEVICE LETTERS | 5368 | 6% | 0% | 26 |
4 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 4365 | 10% | 0% | 44 |
5 | SOLID-STATE ELECTRONICS | 3832 | 5% | 0% | 23 |
6 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 2505 | 3% | 0% | 14 |
7 | IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2496 | 4% | 0% | 17 |
8 | IEEE CIRCUITS AND DEVICES MAGAZINE | 2049 | 0% | 1% | 2 |
9 | TOSHIBA REVIEW | 1840 | 0% | 3% | 1 |
10 | ISSCC DIGEST OF TECHNICAL PAPERS | 1631 | 0% | 2% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ALEXANDER, DR , (2003) TRANSIENT IONIZING RADIATION EFFECTS IN DEVICES AND CIRCUITS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 565 -582 | 35 | 66% | 26 |
2 | HSU, WC , LIANG, MS , CHEN, MC , (2002) IMPLANTATION INDUCED DEFECTS IN THE RETROGRADE WELL WITH A BURIED LAYER.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 149. ISSUE 3. P. G184 -G188 | 17 | 85% | 2 |
3 | KER, MD , WU, CY , (1994) TRANSIENT ANALYSIS OF SUBMICRON CMOS LATCHUP WITH A PHYSICAL CRITERION.SOLID-STATE ELECTRONICS. VOL. 37. ISSUE 2. P. 255-273 | 16 | 100% | 1 |
4 | NATION, SA , MASSENGILL, LW , MCMORROW, D , EVANS, L , STRAATVEIT, A , (2008) LASER DOSE-RATE SIMULATION TO COMPLEMENT LINAC DISCRETE DEVICE DATA.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 55. ISSUE 6. P. 3114-3121 | 8 | 89% | 0 |
5 | SKOROBOGATOV, PK , NIKIFOROV, AY , DEMIDOV, AA , (1998) A WAY TO IMPROVE DOSE RATE LASER SIMULATION ADEQUACY.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 45. ISSUE 6. P. 2659-2664 | 11 | 79% | 2 |
6 | KRIEGER, G , (1987) THE EFFECT OF EMITTER CURRENT CROWDING ON CMOS LATCHUP CHARACTERISTICS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 34. ISSUE 7. P. 1525-1532 | 14 | 100% | 2 |
7 | PAVAN, P , SPIAZZI, G , ZANONI, E , MUSCHITIELLO, M , CECCHETTI, M , (1991) LATCH-UP DC TRIGGERING AND HOLDING CHARACTERISTICS OF N-WELL, TWIN-TUB AND EPITAXIAL CMOS TECHNOLOGIES.IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS. VOL. 138. ISSUE 5. P. 604-612 | 15 | 75% | 1 |
8 | CANALI, C , GIANNINI, M , ZANONI, E , (1988) TECHNIQUES FOR LATCH-UP ANALYSIS IN CMOS ICS BASED ON SCANNING ELECTRON-MICROSCOPY.MICROELECTRONICS AND RELIABILITY. VOL. 28. ISSUE 1. P. 119-161 | 16 | 80% | 0 |
9 | HSU, WC , LIANG, MS , CHEN, SC , CHEN, MC , (2004) ANNEALING EFFECT ON BORON HIGH-ENERGY-ION-IMPLANTATION-INDUCED DEFECTS IN.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 43. ISSUE 8A. P. 5231-5234 | 9 | 75% | 0 |
10 | YANG, YH , WU, CY , (1989) THE EFFECT OF LAYOUT, SUBSTRATE WELL BIASES, AND TRIGGERING SOURCE LOCATION ON LATCHUP TRIGGERING CURRENTS IN BULK CMOS CIRCUITS.SOLID-STATE ELECTRONICS. VOL. 32. ISSUE 4. P. 269-279 | 11 | 100% | 0 |
Classes with closest relation at Level 1 |