Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 36089 | 86 | 12.2 | 38% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | CHARACTERISTIC TESTING METHOD | authKW | 355066 | 1% | 100% | 1 |
| 2 | DIFFUS TEAM | address | 355066 | 1% | 100% | 1 |
| 3 | GATE TURN OFF GTO THYRISTORS | authKW | 355066 | 1% | 100% | 1 |
| 4 | HVDC BACK TO BACK | authKW | 355066 | 1% | 100% | 1 |
| 5 | IEC 700 | authKW | 355066 | 1% | 100% | 1 |
| 6 | IEEE STD857 | authKW | 355066 | 1% | 100% | 1 |
| 7 | KINK AND TAIL | authKW | 355066 | 1% | 100% | 1 |
| 8 | NONREPETITIVE TURN ON TEST | authKW | 355066 | 1% | 100% | 1 |
| 9 | POWER CONVERSION EQUIPMENT | authKW | 355066 | 1% | 100% | 1 |
| 10 | SILICON WAFER BONDING WELDING | authKW | 355066 | 1% | 100% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 470 | 48% | 0% | 41 |
| 2 | Engineering, Electrical & Electronic | 356 | 38% | 0% | 33 |
| 3 | Materials Science, Coatings & Films | 211 | 12% | 0% | 10 |
| 4 | Instruments & Instrumentation | 185 | 15% | 0% | 13 |
| 5 | Nuclear Science & Technology | 149 | 13% | 0% | 11 |
| 6 | Physics, Nuclear | 143 | 13% | 0% | 11 |
| 7 | Electrochemistry | 119 | 10% | 0% | 9 |
| 8 | Physics, Atomic, Molecular & Chemical | 76 | 13% | 0% | 11 |
| 9 | Physics, Condensed Matter | 16 | 9% | 0% | 8 |
| 10 | Materials Science, Multidisciplinary | 12 | 12% | 0% | 10 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | DIFFUS TEAM | 355066 | 1% | 100% | 1 |
| 2 | MICROSTRUCT SCI GRP | 177532 | 1% | 50% | 1 |
| 3 | NUC T | 23669 | 1% | 7% | 1 |
| 4 | IMETEM | 17456 | 3% | 2% | 3 |
| 5 | PHASE | 9827 | 3% | 1% | 3 |
| 6 | DEVICE TECHNOL | 4550 | 1% | 1% | 1 |
| 7 | ONLAND NUCL SCI | 3988 | 1% | 1% | 1 |
| 8 | CHAIR ELE ON DEVICES | 3479 | 1% | 1% | 1 |
| 9 | SEMICOND DIMENS METROL | 3256 | 1% | 1% | 1 |
| 10 | NACL MICROELECT | 3173 | 2% | 0% | 2 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 3365 | 14% | 0% | 12 |
| 2 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1353 | 13% | 0% | 11 |
| 3 | SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS | 1284 | 1% | 0% | 1 |
| 4 | DEFECT AND DIFFUSION FORUM/JOURNAL | 1033 | 1% | 0% | 1 |
| 5 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 952 | 10% | 0% | 9 |
| 6 | BROWN BOVERI REVIEW | 791 | 1% | 0% | 1 |
| 7 | IEEE TRANSACTIONS ON POWER DELIVERY | 739 | 5% | 0% | 4 |
| 8 | IET CIRCUITS DEVICES & SYSTEMS | 635 | 1% | 0% | 1 |
| 9 | JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS | 596 | 1% | 0% | 1 |
| 10 | IEEE TRANSACTIONS ON POWER APPARATUS AND SYSTEMS | 585 | 2% | 0% | 2 |
Author Key Words |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | CHARACTERISTIC TESTING METHOD | 355066 | 1% | 100% | 1 | Search CHARACTERISTIC+TESTING+METHOD | Search CHARACTERISTIC+TESTING+METHOD |
| 2 | GATE TURN OFF GTO THYRISTORS | 355066 | 1% | 100% | 1 | Search GATE+TURN+OFF+GTO+THYRISTORS | Search GATE+TURN+OFF+GTO+THYRISTORS |
| 3 | HVDC BACK TO BACK | 355066 | 1% | 100% | 1 | Search HVDC+BACK+TO+BACK | Search HVDC+BACK+TO+BACK |
| 4 | IEC 700 | 355066 | 1% | 100% | 1 | Search IEC+700 | Search IEC+700 |
| 5 | IEEE STD857 | 355066 | 1% | 100% | 1 | Search IEEE+STD857 | Search IEEE+STD857 |
| 6 | KINK AND TAIL | 355066 | 1% | 100% | 1 | Search KINK+AND+TAIL | Search KINK+AND+TAIL |
| 7 | NONREPETITIVE TURN ON TEST | 355066 | 1% | 100% | 1 | Search NONREPETITIVE+TURN+ON+TEST | Search NONREPETITIVE+TURN+ON+TEST |
| 8 | POWER CONVERSION EQUIPMENT | 355066 | 1% | 100% | 1 | Search POWER+CONVERSION+EQUIPMENT | Search POWER+CONVERSION+EQUIPMENT |
| 9 | SILICON WAFER BONDING WELDING | 355066 | 1% | 100% | 1 | Search SILICON+WAFER+BONDING+WELDING | Search SILICON+WAFER+BONDING+WELDING |
| 10 | TURN ON STRESS | 355066 | 1% | 100% | 1 | Search TURN+ON+STRESS | Search TURN+ON+STRESS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | HAUSER, T , FRIEDLAND, E , NAIDOO, SR , (2000) STUDY OF THE DIFFUSION BEHAVIOUR OF ALUMINIUM IN SILICON UP TO 900 DEGREES C BY NUCLEAR REACTION ANALYSIS.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 161. ISSUE . P. 656 -662 | 10 | 71% | 1 |
| 2 | IACONA, F , RAINERI, V , LA VIA, F , PRIVITERA, V , GASPAROTTO, A , RIMINI, E , (2000) THERMAL OXIDATION OF HIGH DOSE ALUMINUM IMPLANTED SILICON.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 147. ISSUE 7. P. 2762-2765 | 7 | 78% | 1 |
| 3 | LAFERLA, A , TORRISI, L , GALVAGNO, G , RIMINI, E , CIAVOLA, G , CARNERA, A , GASPAROTTO, A , (1993) AL-O COMPLEX-FORMATION IN ION-IMPLANTED CZOCHRALSKI AND FLOATING-ZONE SI SUBSTRATES.APPLIED PHYSICS LETTERS. VOL. 62. ISSUE 4. P. 393-395 | 6 | 100% | 8 |
| 4 | LAFERLA, A , TORRISI, L , GALVAGNO, G , RIMINI, E , CIAVOLA, G , CARNERA, A , GASPAROTTO, A , (1993) HIGH-ENERGY IMPLANTS OF ALUMINUM IN CZOCHRALSKI AND FLOATING ZONE GROWN SILICON SUBSTRATES.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 74. ISSUE 1-2. P. 109-112 | 6 | 86% | 2 |
| 5 | GODIGNON, P , MORVAN, E , MONTSERRAT, J , JORDA, X , FLORES, D , REBOLLO, J , (1999) AS-AL RECOIL IMPLANTATION THROUGH SI3N4 BARRIER LAYER.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 147. ISSUE 1-4. P. 101-105 | 4 | 100% | 0 |
| 6 | LAFERLA, A , GALVAGNO, G , RINAUDO, S , RAINERI, V , FRANCO, G , CAMALLERI, M , GASPAROTTO, A , CARNERA, A , RIMINI, E , (1996) ION IMPLANTATION AND DIFFUSION OF AL IN A SIO2/SI SYSTEM.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 116. ISSUE 1-4. P. 378-381 | 5 | 83% | 4 |
| 7 | WATANABE, M , ISHIWATA, O , NAGANO, M , KIRIHATA, H , (1991) ANNEALING BEHAVIOR OF ION-IMPLANTED ALUMINUM ATOMS IN SILICON BY USE OF CAPPING FILM.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 138. ISSUE 11. P. 3427-3431 | 5 | 100% | 4 |
| 8 | ORTIZ, C , GROB, JJ , MATHIOT, D , CLAVERIE, A , DUBOIS, C , JERISIAN, R , (1999) THERMAL REDISTRIBUTION OF AL IMPLANTED IN SI: EVIDENCES FOR INTERACTIONS WITH EXTENDED DEFECTS.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 147. ISSUE 1-4. P. 122-126 | 5 | 71% | 6 |
| 9 | MAWBY, PA , TOWERS, MS , (2001) MODELLING OF SELF-PROTECTED LIGHT-TRIGGERED THYRISTORS.IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS. VOL. 148. ISSUE 2. P. 55 -63 | 4 | 80% | 0 |
| 10 | LAFERLA, A , TORRISI, L , GALVAGNO, G , RIMINI, E , CIAVOLA, G , CARNERA, A , GASPAROTTO, A , (1993) IMPLANTS OF ALUMINUM IN THE 50-120 MEV ENERGY-RANGE INTO SILICON.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 73. ISSUE 1. P. 9-13 | 6 | 67% | 9 |
Classes with closest relation at Level 1 |