Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 34875 | 105 | 16.2 | 48% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | INDIUM OXIDE CERAMICS | authKW | 872446 | 3% | 100% | 3 |
| 2 | DILATATION CENTERS | authKW | 581631 | 2% | 100% | 2 |
| 3 | ELASTIC ENERGY RELAXATION | authKW | 581631 | 2% | 100% | 2 |
| 4 | PROBLEMS MECH ENGN | address | 364513 | 35% | 3% | 37 |
| 5 | BARIUM DOPED INDIUM OXIDE CERAMICS | authKW | 290815 | 1% | 100% | 1 |
| 6 | CHIM FIZ IND | address | 290815 | 1% | 100% | 1 |
| 7 | CHROMIUM NIOBIUM TUNGSTEN V OXIDE | authKW | 290815 | 1% | 100% | 1 |
| 8 | FESTKORPERU | address | 290815 | 1% | 100% | 1 |
| 9 | GALLIUN NITRIDE | authKW | 290815 | 1% | 100% | 1 |
| 10 | GRAIN BOUNDARY POTENTIAL BARRIERS | authKW | 290815 | 1% | 100% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 794 | 46% | 0% | 48 |
| 2 | Physics, Applied | 391 | 40% | 0% | 42 |
| 3 | Materials Science, Ceramics | 53 | 5% | 0% | 5 |
| 4 | Materials Science, Multidisciplinary | 32 | 15% | 0% | 16 |
| 5 | Materials Science, Composites | 14 | 2% | 0% | 2 |
| 6 | Materials Science, Coatings & Films | 12 | 3% | 0% | 3 |
| 7 | Mechanics | 7 | 4% | 0% | 4 |
| 8 | Microscopy | 6 | 1% | 0% | 1 |
| 9 | Physics, Fluids & Plasmas | 3 | 2% | 0% | 2 |
| 10 | Physics, Multidisciplinary | 0 | 3% | 0% | 3 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | PROBLEMS MECH ENGN | 364513 | 35% | 3% | 37 |
| 2 | CHIM FIZ IND | 290815 | 1% | 100% | 1 |
| 3 | FESTKORPERU | 290815 | 1% | 100% | 1 |
| 4 | STATE DESIGN RARE MET IND | 290815 | 1% | 100% | 1 |
| 5 | ELE OPHYS RADIAT TECHNOL | 67428 | 4% | 6% | 4 |
| 6 | NSC KHARKOV PHYS TECHNOL | 20771 | 1% | 7% | 1 |
| 7 | MECH OPT | 19386 | 1% | 7% | 1 |
| 8 | MACHINE CONSTRUCT | 18174 | 1% | 6% | 1 |
| 9 | CIIIA | 13846 | 1% | 5% | 1 |
| 10 | INVEST INNOVAC INGN AERONAUT | 13846 | 1% | 5% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | PHYSICS OF THE SOLID STATE | 22340 | 24% | 0% | 25 |
| 2 | TECHNICAL PHYSICS LETTERS | 13017 | 16% | 0% | 17 |
| 3 | SEMICONDUCTORS | 2109 | 7% | 0% | 7 |
| 4 | MECHANICS OF SOLIDS | 2062 | 2% | 0% | 2 |
| 5 | REVUE DE PHYSIQUE APPLIQUEE | 881 | 2% | 0% | 2 |
| 6 | VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 603 | 1% | 0% | 1 |
| 7 | CHINA FOUNDRY | 557 | 1% | 0% | 1 |
| 8 | EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 383 | 2% | 0% | 2 |
| 9 | JOURNAL OF NEW MATERIALS FOR ELECTROCHEMICAL SYSTEMS | 375 | 1% | 0% | 1 |
| 10 | JOURNAL DE PHYSIQUE III | 271 | 1% | 0% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | KUKUSHKIN, SA , OSIPOV, AV , (2016) PHASE EQUILIBRIUM IN THE FORMATION OF SILICON CARBIDE BY TOPOCHEMICAL CONVERSION OF SILICON.PHYSICS OF THE SOLID STATE. VOL. 58. ISSUE 4. P. 747 -751 | 6 | 100% | 0 |
| 2 | KUKUSHKIN, SA , OSIPOV, AV , FEOKTISTOV, NA , (2014) SYNTHESIS OF EPITAXIAL SILICON CARBIDE FILMS THROUGH THE SUBSTITUTION OF ATOMS IN THE SILICON CRYSTAL LATTICE: A REVIEW.PHYSICS OF THE SOLID STATE. VOL. 56. ISSUE 8. P. 1507 -1535 | 14 | 39% | 4 |
| 3 | BONDARCHUK, AN , AGUILAR-MARTINEZ, JA , PECH-CANUL, MI , (2014) EFFECTS OF ZR DOPANT AND SINTERING TEMPERATURE ON ELECTRICAL PROPERTIES OF IN2O3-SRO BASED CERAMICS.CERAMICS INTERNATIONAL. VOL. 40. ISSUE 8. P. 11533 -11541 | 8 | 53% | 1 |
| 4 | KUKUSHKIN, SA , OSIPOV, AV , (2015) THE EQUILIBRIUM STATE IN THE SI-O-C TERNARY SYSTEM DURING SIC GROWTH BY CHEMICAL SUBSTITUTION OF ATOMS.TECHNICAL PHYSICS LETTERS. VOL. 41. ISSUE 3. P. 259 -262 | 4 | 100% | 0 |
| 5 | KUZ'MICHEV, SV , KUKUSHKIN, SA , OSIPOV, AV , (2013) ELASTIC INTERACTION OF POINT DEFECTS IN CRYSTALS WITH CUBIC SYMMETRY.MECHANICS OF SOLIDS. VOL. 48. ISSUE 4. P. 431-438 | 4 | 100% | 0 |
| 6 | KUKUSHKIN, SA , OSIPOV, AV , (2016) DETERMINING POLYTYPE COMPOSITION OF SILICON CARBIDE FILMS BY UV ELLIPSOMETRY.TECHNICAL PHYSICS LETTERS. VOL. 42. ISSUE 2. P. 175 -178 | 5 | 71% | 0 |
| 7 | GLOT, AB , MAZURIK, SV , JONES, BJ , BONDARCHUK, AN , BULPETT, R , VERMA, N , (2010) CURRENT LIMITING AND NEGATIVE DIFFERENTIAL RESISTANCE IN INDIUM OXIDE BASED CERAMICS.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY. VOL. 30. ISSUE 2. P. 539-544 | 9 | 43% | 4 |
| 8 | KUKUSHKIN, SA , OSIPOV, AV , ROMANYCHEV, AI , (2016) EPITAXIAL GROWTH OF ZINC OXIDE BY THE METHOD OF ATOMIC LAYER DEPOSITION ON SIC/SI SUBSTRATES.PHYSICS OF THE SOLID STATE. VOL. 58. ISSUE 7. P. 1448 -1452 | 6 | 55% | 0 |
| 9 | OSTAPCHUK, PN , TROTSENKO, OG , (2016) ELASTIC INTERACTION OF POINT DEFECTS WITH AN EDGE DISLOCATION LOOP WITHIN THE GREEN'S FUNCTION FORMALISM.PHYSICS OF THE SOLID STATE. VOL. 58. ISSUE 9. P. 1810 -1818 | 4 | 80% | 0 |
| 10 | KUKUSHKIN, SA , OSIPOV, AV , ROZHAVSKAYA, MM , MYASOEDOV, AV , TROSHKOV, SI , LUNDIN, VV , SOROKIN, LM , TSATSUL'NIKOV, AF , (2015) GROWTH AND STRUCTURE OF GAN LAYERS ON SILICON CARBIDE SYNTHESIZED ON A SI SUBSTRATE BY THE SUBSTITUTION OF ATOMS: A MODEL OF THE FORMATION OF V-DEFECTS DURING THE GROWTH OF GAN.PHYSICS OF THE SOLID STATE. VOL. 57. ISSUE 9. P. 1899 -1907 | 5 | 63% | 0 |
Classes with closest relation at Level 1 |