Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
5652 | 1592 | 20.1 | 65% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
434 | 2 | MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//AMORPHOUS SILICON | 16320 |
5652 | 1 | AMORPHOUS SILICON CARBIDE//SILICON CARBON ALLOYS//A SIC H | 1592 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | AMORPHOUS SILICON CARBIDE | authKW | 374209 | 2% | 51% | 38 |
2 | SILICON CARBON ALLOYS | authKW | 227111 | 1% | 79% | 15 |
3 | A SIC H | authKW | 173193 | 1% | 53% | 17 |
4 | SILICON CARBIDE | authKW | 132976 | 11% | 4% | 178 |
5 | HYDROGENATED AMORPHOUS SILICON CARBIDE | authKW | 127852 | 1% | 67% | 10 |
6 | A SIC H FILMS | authKW | 95894 | 0% | 100% | 5 |
7 | MICROCRYSTALLINE SILICON CARBIDE | authKW | 95894 | 0% | 100% | 5 |
8 | HWCVD | authKW | 83387 | 1% | 23% | 19 |
9 | C SIC FILMS | authKW | 79910 | 0% | 83% | 5 |
10 | MICROCRYSTALLINE SILICON CARBON | authKW | 76715 | 0% | 100% | 4 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 16498 | 23% | 0% | 372 |
2 | Physics, Applied | 11431 | 54% | 0% | 862 |
3 | Materials Science, Multidisciplinary | 6878 | 46% | 0% | 737 |
4 | Physics, Condensed Matter | 6571 | 34% | 0% | 548 |
5 | Materials Science, Ceramics | 5849 | 12% | 0% | 195 |
6 | Instruments & Instrumentation | 69 | 3% | 0% | 47 |
7 | Chemistry, Physical | 64 | 8% | 0% | 122 |
8 | COMPUTER APPLICATIONS & CYBERNETICS | 60 | 0% | 0% | 3 |
9 | Engineering, Electrical & Electronic | 58 | 6% | 0% | 101 |
10 | Mechanics | 43 | 3% | 0% | 46 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CNISM UNITA N OLI | 43151 | 0% | 75% | 3 |
2 | COMPLESSO UNIV MSA | 34241 | 0% | 36% | 5 |
3 | TECNOSUD RAMBLA THERMODYNAM | 25570 | 0% | 67% | 2 |
4 | NUCL MICROSCOPE | 21572 | 0% | 38% | 3 |
5 | CHANGCHUN PHYS OPEN EXCITED STATE PROC | 19179 | 0% | 100% | 1 |
6 | CLAUSTHALER ZENTRUM MAT | 19179 | 0% | 100% | 1 |
7 | CNISM CASTI DIPARTIMENTO FIS | 19179 | 0% | 100% | 1 |
8 | CNRS L2M | 19179 | 0% | 100% | 1 |
9 | CONSORZIO FIS MAT | 19179 | 0% | 100% | 1 |
10 | CONSORZIO I UNITA | 19179 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF NON-CRYSTALLINE SOLIDS | 26550 | 11% | 1% | 178 |
2 | THIN SOLID FILMS | 17998 | 12% | 1% | 185 |
3 | PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 10010 | 3% | 1% | 41 |
4 | APPLIED SURFACE SCIENCE | 4313 | 6% | 0% | 90 |
5 | DIAMOND AND RELATED MATERIALS | 2840 | 2% | 0% | 33 |
6 | SOLAR ENERGY MATERIALS | 2601 | 1% | 1% | 11 |
7 | JOURNAL OF APPLIED PHYSICS | 2154 | 7% | 0% | 113 |
8 | CHEMICAL VAPOR DEPOSITION | 1910 | 1% | 1% | 10 |
9 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1719 | 2% | 0% | 26 |
10 | VACUUM | 1427 | 2% | 0% | 27 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | AMORPHOUS SILICON CARBIDE | 374209 | 2% | 51% | 38 | Search AMORPHOUS+SILICON+CARBIDE | Search AMORPHOUS+SILICON+CARBIDE |
2 | SILICON CARBON ALLOYS | 227111 | 1% | 79% | 15 | Search SILICON+CARBON+ALLOYS | Search SILICON+CARBON+ALLOYS |
3 | A SIC H | 173193 | 1% | 53% | 17 | Search A+SIC+H | Search A+SIC+H |
4 | SILICON CARBIDE | 132976 | 11% | 4% | 178 | Search SILICON+CARBIDE | Search SILICON+CARBIDE |
5 | HYDROGENATED AMORPHOUS SILICON CARBIDE | 127852 | 1% | 67% | 10 | Search HYDROGENATED+AMORPHOUS+SILICON+CARBIDE | Search HYDROGENATED+AMORPHOUS+SILICON+CARBIDE |
6 | A SIC H FILMS | 95894 | 0% | 100% | 5 | Search A+SIC+H+FILMS | Search A+SIC+H+FILMS |
7 | MICROCRYSTALLINE SILICON CARBIDE | 95894 | 0% | 100% | 5 | Search MICROCRYSTALLINE+SILICON+CARBIDE | Search MICROCRYSTALLINE+SILICON+CARBIDE |
8 | HWCVD | 83387 | 1% | 23% | 19 | Search HWCVD | Search HWCVD |
9 | C SIC FILMS | 79910 | 0% | 83% | 5 | Search C+SIC+FILMS | Search C+SIC+FILMS |
10 | MICROCRYSTALLINE SILICON CARBON | 76715 | 0% | 100% | 4 | Search MICROCRYSTALLINE+SILICON+CARBON | Search MICROCRYSTALLINE+SILICON+CARBON |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | BULLOT, J , SCHMIDT, MP , (1987) PHYSICS OF AMORPHOUS-SILICON CARBON ALLOYS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 143. ISSUE 2. P. 345-418 | 77 | 58% | 368 |
2 | PAWBAKE, A , WAMAN, V , WAYKAR, R , JADHAVAR, A , BHORDE, A , KULKARNI, R , FUNDE, A , PARMAR, J , BHATTACHARYYA, S , DATE, A , ET AL (2016) HOT WIRE CHEMICAL VAPOR DEPOSITED MULTIPHASE SILICON CARBIDE (SIC) THIN FILMS AT VARIOUS FILAMENT TEMPERATURES.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 27. ISSUE 12. P. 12340 -12350 | 40 | 61% | 0 |
3 | TEHRANI, FS , BADARUDDIN, MR , RAHBARI, RG , MUHAMAD, MR , RAHMAN, SA , (2012) LOW-PRESSURE SYNTHESIS AND CHARACTERIZATION OF MULTIPHASE SIC BY HWCVD USING CH4/SIH4.VACUUM. VOL. 86. ISSUE 8. P. 1150-1154 | 29 | 85% | 7 |
4 | TEHRANI, FS , (2015) TRANSFORMATION FROM AMORPHOUS TO NANO-CRYSTALLINE SIC THIN FILMS PREPARED BY HWCVD TECHNIQUE WITHOUT HYDROGEN DILUTION.BULLETIN OF MATERIALS SCIENCE. VOL. 38. ISSUE 5. P. 1333 -1338 | 30 | 79% | 0 |
5 | ROVIRA, PI , ALVAREZ, F , (1997) CHEMICAL (DIS)ORDER IN A-SI1-XCX:H FOR X<0.6.PHYSICAL REVIEW B. VOL. 55. ISSUE 7. P. 4426-4434 | 43 | 77% | 59 |
6 | SUMMONTE, C , RIZZOLI, R , BIANCONI, M , DESALVO, A , IENCINELLA, D , GIORGIS, F , (2004) WIDE BAND-GAP SILICON-CARBON ALLOYS DEPOSITED BY VERY HIGH FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION.JOURNAL OF APPLIED PHYSICS. VOL. 96. ISSUE 7. P. 3987 -3997 | 39 | 64% | 27 |
7 | KAMBLE, MM , SWAMAN, V , GHOSH, SS , MAYABADI, A , SATHE, VG , SHRIPATHI, T , PATHAN, HM , JADKAR, SR , (2013) HIGH GROWTH RATE OF A-SIC:H FILMS USING ETHANE CARBON SOURCE BY HW-CVD METHOD.BULLETIN OF MATERIALS SCIENCE. VOL. 36. ISSUE 7. P. 1177-1185 | 32 | 64% | 0 |
8 | TABBAL, M , SAID, A , HANNOUN, E , CHRISTIDIS, T , (2007) AMORPHOUS TO CRYSTALLINE PHASE TRANSITION IN PULSED LASER DEPOSITED SILICON CARBIDE.APPLIED SURFACE SCIENCE. VOL. 253. ISSUE 17. P. 7050-7059 | 35 | 63% | 14 |
9 | JHA, HS , YADAV, A , SINGH, M , KUMAR, S , AGARWAL, P , (2015) GROWTH OF WIDE-BANDGAP NANOCRYSTALLINE SILICON CARBIDE FILMS BY HWCVD: INFLUENCE OF FILAMENT TEMPERATURE ON STRUCTURAL AND OPTOELECTRONIC PROPERTIES.JOURNAL OF ELECTRONIC MATERIALS. VOL. 44. ISSUE 3. P. 922 -928 | 25 | 71% | 0 |
10 | PAWBAKE, A , MAYABADI, A , WAYKAR, R , KULKARNI, R , JADHAVAR, A , WAMAN, V , PARMAR, J , BHATTACHARYYA, S , MA, YR , DEVAN, RS , ET AL (2016) GROWTH OF BORON DOPED HYDROGENATED NANOCRYSTALLINE CUBIC SILICON CARBIDE (3C-SIC) FILMS BY HOT WIRE-CVD.MATERIALS RESEARCH BULLETIN. VOL. 76. ISSUE . P. 205 -215 | 26 | 62% | 1 |
Classes with closest relation at Level 1 |