Class information for:
Level 1: MHEMT//HEMT//PHEMT

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
6739 1449 14.1 67%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
579 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC 14235
6739 1                   MHEMT//HEMT//PHEMT 1449

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MHEMT authKW 265383 2% 55% 23
2 HEMT authKW 220743 6% 11% 93
3 PHEMT authKW 187367 3% 23% 39
4 PSEUDOMORPHIC authKW 185998 1% 55% 16
5 HIGH ELECTRON MOBILITY TRANSISTORS authKW 183599 5% 12% 70
6 METAMORPHIC authKW 179765 2% 27% 32
7 GATE VOLTAGE SWING authKW 150507 1% 71% 10
8 INALAS INGAAS authKW 145775 1% 43% 16
9 DOPED CHANNEL FETS authKW 129063 0% 88% 7
10 INGAP INGAAS authKW 126430 0% 100% 6

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 18975 66% 0% 955
2 Physics, Applied 8575 49% 0% 717
3 Physics, Condensed Matter 1415 18% 0% 261
4 Nanoscience & Nanotechnology 1244 11% 0% 155
5 Materials Science, Coatings & Films 261 4% 0% 51
6 Physics, Multidisciplinary 155 6% 0% 94
7 Materials Science, Multidisciplinary 152 11% 0% 155
8 Electrochemistry 84 3% 0% 39
9 Optics 31 3% 0% 50
10 Crystallography 22 2% 0% 25

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MILLIMETER WAVE INNOVAT TECHNOL 102759 1% 24% 20
2 KANSAI ELECT S 79663 1% 34% 11
3 ULTRAFAST SYST GRP 47410 0% 75% 3
4 SYST ELECT S 43175 2% 9% 22
5 MICROWAVE SPACE MISSION ELECT 42143 0% 100% 2
6 TM RD SDN BHD 42143 0% 100% 2
7 MICROELECT 32162 11% 1% 162
8 HYPERFREQUENCES SEMICOND 30638 1% 8% 19
9 DEVICES 3 5 28094 0% 67% 2
10 INTERDIPARTIMENTALE RIC MAT TECNOL INFORMAZ 28094 0% 67% 2

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE ELECTRON DEVICE LETTERS 64472 11% 2% 166
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 29487 10% 1% 146
3 SOLID-STATE ELECTRONICS 18811 6% 1% 94
4 MICROELECTRONICS RELIABILITY 16582 5% 1% 74
5 IEEE MICROWAVE AND GUIDED WAVE LETTERS 15630 2% 3% 25
6 ELECTRONICS LETTERS 8292 9% 0% 125
7 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 7364 4% 1% 53
8 IEICE TRANSACTIONS ON ELECTRONICS 4502 2% 1% 36
9 INSTITUTE OF PHYSICS CONFERENCE SERIES 3571 3% 0% 41
10 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 3247 5% 0% 70

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 MHEMT 265383 2% 55% 23 Search MHEMT Search MHEMT
2 HEMT 220743 6% 11% 93 Search HEMT Search HEMT
3 PHEMT 187367 3% 23% 39 Search PHEMT Search PHEMT
4 PSEUDOMORPHIC 185998 1% 55% 16 Search PSEUDOMORPHIC Search PSEUDOMORPHIC
5 HIGH ELECTRON MOBILITY TRANSISTORS 183599 5% 12% 70 Search HIGH+ELECTRON+MOBILITY+TRANSISTORS Search HIGH+ELECTRON+MOBILITY+TRANSISTORS
6 METAMORPHIC 179765 2% 27% 32 Search METAMORPHIC Search METAMORPHIC
7 GATE VOLTAGE SWING 150507 1% 71% 10 Search GATE+VOLTAGE+SWING Search GATE+VOLTAGE+SWING
8 INALAS INGAAS 145775 1% 43% 16 Search INALAS+INGAAS Search INALAS+INGAAS
9 DOPED CHANNEL FETS 129063 0% 88% 7 Search DOPED+CHANNEL+FETS Search DOPED+CHANNEL+FETS
10 INGAP INGAAS 126430 0% 100% 6 Search INGAP+INGAAS Search INGAP+INGAAS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 MENEGHESSO, G , ZANONI, E , (2002) FAILURE MODES AND MECHANISMS OF INP-BASED AND METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS.MICROELECTRONICS RELIABILITY. VOL. 42. ISSUE 4-5. P. 685 -708 37 76% 25
2 AJAYAN, J , NIRMAL, D , (2017) 20-NM ENHANCEMENT-MODE METAMORPHIC GAAS HEMT WITH HIGHLY DOPED INGAAS SOURCE/DRAIN REGIONS FOR HIGH-FREQUENCY APPLICATIONS.INTERNATIONAL JOURNAL OF ELECTRONICS. VOL. 104. ISSUE 3. P. 504 -512 23 79% 0
3 CHIU, HC , WU, CH , LIN, CK , CHIEN, FT , (2015) INVESTIGATION OF IMPACT IONIZATION AND FLICKER NOISE PROPERTIES IN INDIUM ALUMINUM ARSENIDE/INDIUM GALLINUM ARSENIDE METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS WITH VARIOUS WORK FUNCTION-GATE METALS.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 30. ISSUE . P. 41 -47 19 95% 0
4 CHEN, CC , CHEN, HI , LIU, IP , CHOU, PC , LIOU, JK , TSAI, JH , LIU, WC , (2015) AN ENHANCEMENT-MODE PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR PREPARED BY AN ELECTROLESS PLATING (EP) AND A GATE-SINKING APPROACHES.SOLID-STATE ELECTRONICS. VOL. 105. ISSUE . P. 45 -50 20 87% 0
5 SUEMITSU, T , (2007) RECENT ACHIEVEMENTS IN THE RELIABILITY OF INP-BASED HEMTS.THIN SOLID FILMS. VOL. 515. ISSUE 10. P. 4378 -4383 23 88% 5
6 XU, D , YANG, XP , KONG, WMT , SEEKELL, P , LOUIE, K , PLEASANT, LMM , MOHNKERN, L , DUGAS, DM , CHU, K , KARIMY, HF , ET AL (2011) GATE-LENGTH SCALING OF ULTRASHORT METAMORPHIC HIGH-ELECTRON MOBILITY TRANSISTORS WITH ASYMMETRICALLY RECESSED GATE CONTACTS FOR MILLIMETER- AND SUBMILLIMETER-WAVE APPLICATIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 58. ISSUE 5. P. 1408-1417 20 91% 5
7 AJAYAN, J , NIRMAL, D , (2016) 20-NM T-GATE COMPOSITE CHANNEL ENHANCEMENT-MODE METAMORPHIC HEMT ON GAAS SUBSTRATES FOR FUTURE THZ APPLICATIONS.JOURNAL OF COMPUTATIONAL ELECTRONICS. VOL. 15. ISSUE 4. P. 1291 -1296 21 78% 0
8 MENOZZI, R , (2004) OFF-STATE BREAKDOWN OF GAASPHEMTS: REVIEW AND NEW DATA.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 4. ISSUE 1. P. 54-62 26 79% 26
9 LIN, YS , CHEN, BY , (2007) PERFORMANCE OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR AS A FUNCTION OF TEMPERATURE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 154. ISSUE 5. P. H406-H411 25 71% 8
10 LIN, YS , CHEN, BY , HO, CH , (2007) COMPREHENSIVE CHARACTERIZATION OF ALGAAS/INGAAS/GAAS COMPOSITE-CHANNEL HIGH-ELECTRON MOBILITY TRANSISTOR.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 154. ISSUE 11. P. H951-H956 25 69% 11

Classes with closest relation at Level 1


Rank Class id link
1 3053 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//PSEUDOMORPHIC MODFET
2 17203 GAAS MESFET//GATE LAG//DRAIN CURRENT TRANSIENT
3 17212 INALAS INP//CONDUCTION SUBBAND//INALAS ALASSB
4 8164 MISFIT DISLOCATION//ULTRAHIGH FREQUENCY SEMICOND ELECT//METAMORPHIC BUFFER
5 21482 CARL EMILY FUCHS MICROELECT//CEFIM//HOT CARRIER LUMINESCENCE
6 36587 HDFET//HETERODIMENSIONAL DEVICES//HETERODIMENSIONAL FIELD EFFECT TRANSISTOR HDFET
7 11353 DELTA DOPING//MULTISUBBAND ELECTRON MOBILITY//DELTA DOPED QUANTUM WELLS
8 21140 REAL SPACE TRANSFER//CHARGE INJECTION TRANSISTOR//HOT ELECTRON LASER
9 5693 LARGE SIGNAL MODEL//NONLINEAR MEASUREMENTS//IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
10 6482 III V MOSFET//GAAS MOSFET//INGAAS

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