Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
5040 | 1683 | 18.5 | 44% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | IGBT | authKW | 898263 | 6% | 49% | 101 |
2 | INSULATED GATE BIPOLAR TRANSISTOR IGBT | authKW | 603180 | 4% | 50% | 66 |
3 | INSULATED GATE BIPOLAR TRANSISTORS | authKW | 359894 | 3% | 40% | 50 |
4 | INSULATED GATE BIPOLAR TRANSISTORS IGBTS | authKW | 334823 | 2% | 56% | 33 |
5 | IEEE TRANSACTIONS ON POWER ELECTRONICS | journal | 311742 | 20% | 5% | 339 |
6 | POWER SEMICONDUCTOR DEVICES | authKW | 266623 | 3% | 26% | 57 |
7 | POWER MODULE | authKW | 215126 | 2% | 46% | 26 |
8 | SILICON CARBIDE SIC | authKW | 188461 | 4% | 17% | 61 |
9 | MICROELECTRONICS RELIABILITY | journal | 181408 | 16% | 4% | 263 |
10 | SIC MOSFET | authKW | 174750 | 1% | 57% | 17 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 40017 | 88% | 0% | 1477 |
2 | Nanoscience & Nanotechnology | 4857 | 19% | 0% | 315 |
3 | Physics, Applied | 4845 | 36% | 0% | 599 |
4 | Engineering, General | 1439 | 7% | 0% | 126 |
5 | Automation & Control Systems | 194 | 3% | 0% | 44 |
6 | Instruments & Instrumentation | 173 | 4% | 0% | 68 |
7 | Physics, Condensed Matter | 167 | 7% | 0% | 125 |
8 | Engineering, Manufacturing | 20 | 1% | 0% | 15 |
9 | Computer Science, Hardware & Architecture | 12 | 1% | 0% | 13 |
10 | Telecommunications | 3 | 1% | 0% | 17 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | RELIABLE POWER ELECT | 111116 | 0% | 88% | 7 |
2 | RELIABLE POWER ELECT CORPE | 64789 | 0% | 71% | 5 |
3 | ELECT ELECT INFORMAT ENG | 63489 | 0% | 50% | 7 |
4 | POWER IND | 58052 | 0% | 80% | 4 |
5 | POWER ELECT SYST | 57634 | 2% | 8% | 40 |
6 | UR03ES05 | 54425 | 0% | 100% | 3 |
7 | ELECT ENERGY CONVERS E2C | 54419 | 0% | 50% | 6 |
8 | CHAIR POWER ELECT | 50471 | 0% | 35% | 8 |
9 | ELEKTROPHYS | 48375 | 0% | 67% | 4 |
10 | DELTA SHANGHAI DESIGN | 36283 | 0% | 100% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON POWER ELECTRONICS | 311742 | 20% | 5% | 339 |
2 | MICROELECTRONICS RELIABILITY | 181408 | 16% | 4% | 263 |
3 | IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS | 37181 | 2% | 7% | 28 |
4 | IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 31211 | 7% | 2% | 111 |
5 | IEEE INDUSTRIAL ELECTRONICS MAGAZINE | 17165 | 1% | 8% | 12 |
6 | SOLID-STATE ELECTRONICS | 16518 | 6% | 1% | 95 |
7 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 15133 | 7% | 1% | 113 |
8 | IET POWER ELECTRONICS | 12116 | 2% | 2% | 33 |
9 | IEEE ELECTRON DEVICE LETTERS | 11543 | 5% | 1% | 76 |
10 | IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 8751 | 1% | 2% | 21 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | IGBT | 898263 | 6% | 49% | 101 | Search IGBT | Search IGBT |
2 | INSULATED GATE BIPOLAR TRANSISTOR IGBT | 603180 | 4% | 50% | 66 | Search INSULATED+GATE+BIPOLAR+TRANSISTOR+IGBT | Search INSULATED+GATE+BIPOLAR+TRANSISTOR+IGBT |
3 | INSULATED GATE BIPOLAR TRANSISTORS | 359894 | 3% | 40% | 50 | Search INSULATED+GATE+BIPOLAR+TRANSISTORS | Search INSULATED+GATE+BIPOLAR+TRANSISTORS |
4 | INSULATED GATE BIPOLAR TRANSISTORS IGBTS | 334823 | 2% | 56% | 33 | Search INSULATED+GATE+BIPOLAR+TRANSISTORS+IGBTS | Search INSULATED+GATE+BIPOLAR+TRANSISTORS+IGBTS |
5 | POWER SEMICONDUCTOR DEVICES | 266623 | 3% | 26% | 57 | Search POWER+SEMICONDUCTOR+DEVICES | Search POWER+SEMICONDUCTOR+DEVICES |
6 | POWER MODULE | 215126 | 2% | 46% | 26 | Search POWER+MODULE | Search POWER+MODULE |
7 | SILICON CARBIDE SIC | 188461 | 4% | 17% | 61 | Search SILICON+CARBIDE+SIC | Search SILICON+CARBIDE+SIC |
8 | SIC MOSFET | 174750 | 1% | 57% | 17 | Search SIC+MOSFET | Search SIC+MOSFET |
9 | DYNAMIC AVALANCHE | 156791 | 1% | 79% | 11 | Search DYNAMIC+AVALANCHE | Search DYNAMIC+AVALANCHE |
10 | IEGT | 129006 | 0% | 89% | 8 | Search IEGT | Search IEGT |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | OH, H , HAN, B , MCCLUSKEY, P , HAN, C , YOUN, BD , (2015) PHYSICS-OF-FAILURE, CONDITION MONITORING, AND PROGNOSTICS OF INSULATED GATE BIPOLAR TRANSISTOR MODULES: A REVIEW.IEEE TRANSACTIONS ON POWER ELECTRONICS. VOL. 30. ISSUE 5. P. 2413 -2426 | 67 | 73% | 34 |
2 | PEFTITSIS, D , RABKOWSKI, J , (2016) GATE AND BASE DRIVERS FOR SILICON CARBIDE POWER TRANSISTORS: AN OVERVIEW.IEEE TRANSACTIONS ON POWER ELECTRONICS. VOL. 31. ISSUE 10. P. 7194 -7213 | 52 | 69% | 0 |
3 | AVENAS, Y , DUPONT, L , BAKER, N , ZARA, H , BARRUEL, F , (2015) CONDITION MONITORING A DECADE OF PROPOSED TECHNIQUES.IEEE INDUSTRIAL ELECTRONICS MAGAZINE. VOL. 9. ISSUE 4. P. 22 -36 | 29 | 91% | 4 |
4 | YANG, SY , XIANG, DW , BRYANT, A , MAWBY, P , RAN, L , TAVNER, P , (2010) CONDITION MONITORING FOR DEVICE RELIABILITY IN POWER ELECTRONIC CONVERTERS: A REVIEW.IEEE TRANSACTIONS ON POWER ELECTRONICS. VOL. 25. ISSUE 11. P. 2734 -2752 | 30 | 71% | 167 |
5 | BAKER, N , LISERRE, M , DUPONT, L , AVENAS, Y , (2014) IMPROVED RELIABILITY OF POWER MODULES A REVIEW OF ONLINE JUNCTION TEMPERATURE MEASUREMENT METHODS.IEEE INDUSTRIAL ELECTRONICS MAGAZINE. VOL. 8. ISSUE 3. P. 17 -27 | 25 | 96% | 9 |
6 | SUBBIAH, A , WASYNCZUK, O , (2016) COMPUTATIONALLY EFFICIENT SIMULATION OF HIGH-FREQUENCY TRANSIENTS IN POWER ELECTRONIC CIRCUITS.IEEE TRANSACTIONS ON POWER ELECTRONICS. VOL. 31. ISSUE 9. P. 6351 -6361 | 28 | 82% | 1 |
7 | DURAND, C , KLINGLER, M , COUTELLIER, D , NACEUR, H , (2016) POWER CYCLING RELIABILITY OF POWER MODULE: A SURVEY.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 16. ISSUE 1. P. 80 -97 | 28 | 76% | 2 |
8 | TANG, YY , MA, H , (2017) DYNAMIC ELECTROTHERMAL MODEL OF PARALLELED IGBT MODULES WITH UNBALANCED STRAY PARAMETERS.IEEE TRANSACTIONS ON POWER ELECTRONICS. VOL. 32. ISSUE 2. P. 1385 -1399 | 24 | 96% | 0 |
9 | BRYANT, A , YANG, SY , MAWBY, P , XIANG, DW , RAN, L , TAVNER, P , PALMER, PR , (2011) INVESTIGATION INTO IGBT DV/DT DURING TURN-OFF AND ITS TEMPERATURE DEPENDENCE.IEEE TRANSACTIONS ON POWER ELECTRONICS. VOL. 26. ISSUE 10. P. 3019 -3031 | 24 | 92% | 32 |
10 | CHOI, UM , JORGENSEN, S , BLAABJERG, F , (2016) ADVANCED ACCELERATED POWER CYCLING TEST FOR RELIABILITY INVESTIGATION OF POWER DEVICE MODULES.IEEE TRANSACTIONS ON POWER ELECTRONICS. VOL. 31. ISSUE 12. P. 8371 -8386 | 24 | 89% | 0 |
Classes with closest relation at Level 1 |