Class information for:
Level 1: PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//ADSORBATE SUBSTRATE INTERACTIONS

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
24018 326 24.2 77%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
899 2             SURFACE SCIENCE//SILICON//SCANNING TUNNELING MICROSCOPY 11316
24018 1                   PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//ADSORBATE SUBSTRATE INTERACTIONS 326

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 PHYSICOCHIM MOLEC ORSAY address 187332 1% 100% 2
2 SURFACE STRUCTURE AND ROUGHNESS authKW 187332 1% 100% 2
3 ADSORBATE SUBSTRATE INTERACTIONS authKW 93666 0% 100% 1
4 AG MULTILAYER ISLANDS authKW 93666 0% 100% 1
5 ANISOTROPIC PROFILE authKW 93666 0% 100% 1
6 ATOMIC AND MOLECULAR STUDIES authKW 93666 0% 100% 1
7 BR SI001 2 X 1 authKW 93666 0% 100% 1
8 BR SI100 2 X 1 authKW 93666 0% 100% 1
9 CHLORIDE VAPOR DEPOSITION PROCESSES SEMICONDUCTING SILICON authKW 93666 0% 100% 1
10 CHLORINE DIFFUSION authKW 93666 0% 100% 1

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Physics, Condensed Matter 3839 56% 0% 184
2 Chemistry, Physical 1372 44% 0% 142
3 Materials Science, Coatings & Films 849 12% 0% 39
4 Physics, Applied 672 31% 0% 100
5 Physics, Multidisciplinary 131 11% 0% 35
6 Physics, Atomic, Molecular & Chemical 56 6% 0% 21
7 Nanoscience & Nanotechnology 31 4% 0% 14
8 Materials Science, Multidisciplinary 14 8% 0% 27
9 Engineering, Electrical & Electronic 0 4% 0% 12
10 Crystallography 0 1% 0% 3

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 PHYSICOCHIM MOLEC ORSAY 187332 1% 100% 2
2 CIENCIA MAT FIS SUPERFICIES 93666 0% 100% 1
3 ION BEAM ENGN EXPTL SAKYO KU 93666 0% 100% 1
4 PHYSICOCHIM MOLEC ORSAYCNRS 93666 0% 100% 1
5 PL ENGN PHYS CLARK HALL 217 93666 0% 100% 1
6 UTILISAT RAYONEMENT SYCHROTRON 93666 0% 100% 1
7 VENABLE KENAN S 48308 3% 6% 9
8 CNRS ELE FONDAMENTALE 46832 0% 50% 1
9 CNRS ELECT FONDAMENTALE 46832 0% 50% 1
10 NAKAYAMA 46832 0% 50% 1

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 SURFACE SCIENCE 21202 24% 0% 78
2 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1701 1% 0% 4
3 PHYSICAL REVIEW B 1425 16% 0% 51
4 APPLIED SURFACE SCIENCE 1387 7% 0% 23
5 PROGRESS IN SURFACE SCIENCE 1186 1% 0% 3
6 VESTNIK ROSSIISKOI AKADEMII NAUK 916 0% 1% 1
7 ANNALES DE PHYSIQUE 674 1% 0% 3
8 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 665 3% 0% 10
9 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 552 0% 1% 1
10 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 547 3% 0% 10

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 SURFACE STRUCTURE AND ROUGHNESS 187332 1% 100% 2 Search SURFACE+STRUCTURE+AND+ROUGHNESS Search SURFACE+STRUCTURE+AND+ROUGHNESS
2 ADSORBATE SUBSTRATE INTERACTIONS 93666 0% 100% 1 Search ADSORBATE+SUBSTRATE+INTERACTIONS Search ADSORBATE+SUBSTRATE+INTERACTIONS
3 AG MULTILAYER ISLANDS 93666 0% 100% 1 Search AG+MULTILAYER+ISLANDS Search AG+MULTILAYER+ISLANDS
4 ANISOTROPIC PROFILE 93666 0% 100% 1 Search ANISOTROPIC+PROFILE Search ANISOTROPIC+PROFILE
5 ATOMIC AND MOLECULAR STUDIES 93666 0% 100% 1 Search ATOMIC+AND+MOLECULAR+STUDIES Search ATOMIC+AND+MOLECULAR+STUDIES
6 BR SI001 2 X 1 93666 0% 100% 1 Search BR+SI001+2+X+1 Search BR+SI001+2+X+1
7 BR SI100 2 X 1 93666 0% 100% 1 Search BR+SI100+2+X+1 Search BR+SI100+2+X+1
8 CHLORIDE VAPOR DEPOSITION PROCESSES SEMICONDUCTING SILICON 93666 0% 100% 1 Search CHLORIDE+VAPOR+DEPOSITION+PROCESSES+SEMICONDUCTING+SILICON Search CHLORIDE+VAPOR+DEPOSITION+PROCESSES+SEMICONDUCTING+SILICON
9 CHLORINE DIFFUSION 93666 0% 100% 1 Search CHLORINE+DIFFUSION Search CHLORINE+DIFFUSION
10 CL SI 93666 0% 100% 1 Search CL+SI Search CL+SI

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 ALDAO, CM , AGRAWAL, A , BUTERA, RE , WEAVER, JH , (2009) ATOMIC PROCESSES DURING CL SUPERSATURATION ETCHING OF SI(100)-(2X1).PHYSICAL REVIEW B. VOL. 79. ISSUE 12. P. - 23 85% 6
2 BISWAS, S , NARASIMHAN, S , (2016) BROMINE AS A PREFERRED ETCHANT FOR SI SURFACES IN THE SUPERSATURATION REGIME: INSIGHTS FROM CALCULATIONS OF ATOMIC SCALE REACTION PATHWAYS.JOURNAL OF PHYSICAL CHEMISTRY C. VOL. 120. ISSUE 28. P. 15230 -15234 23 70% 0
3 TANAKA, M , SHUDO, K , NUMATA, M , (2006) ADSORPTION SITE PREFERENCE OF BR ON SI(111)-7X7.PHYSICAL REVIEW B. VOL. 73. ISSUE 11. P. - 24 83% 3
4 AGRAWAL, A , BUTERA, RE , WEAVER, JH , (2007) CL INSERTION ON SI(100)-(2X1): ETCHING UNDER CONDITIONS OF SUPERSATURATION.PHYSICAL REVIEW LETTERS. VOL. 98. ISSUE 13. P. - 17 85% 6
5 DE WIJS, GA , DE VITA, A , SELLONI, A , (1998) FIRST-PRINCIPLES STUDY OF CHLORINE ADSORPTION AND REACTIONS ON SI(100).PHYSICAL REVIEW B. VOL. 57. ISSUE 16. P. 10021 -10029 29 60% 43
6 TANAKA, M , YAMAKAWA, E , SHIRAO, T , SHUDO, K , (2003) REACTIVITY OF HALOGENS ON A SI(111) SURFACE STUDIED BY SURFACE DIFFERENTIAL REFLECTIVITY.PHYSICAL REVIEW B. VOL. 68. ISSUE 16. P. - 23 68% 9
7 SHUDO, K , KIRIMURA, T , TANAKA, Y , ISHIKAWA, T , TANAKA, M , (2006) QUANTITATIVE ANALYSIS OF THERMALLY INDUCED DESORPTION DURING HALOGEN-ETCHING OF A SILICON (111) SURFACE.SURFACE SCIENCE. VOL. 600. ISSUE 16. P. 3147 -3153 18 75% 1
8 XU, GJ , NAKAYAMA, KS , TRENHAILE, BR , ALDAO, CM , WEAVER, JH , (2003) EQUILIBRIUM MORPHOLOGIES FOR CL-ROUGHENED SI(100) AT 700-750 K: DEPENDENCE ON CL CONCENTRATION.PHYSICAL REVIEW B. VOL. 67. ISSUE 12. P. - 17 85% 8
9 ALDAO, CM , WEAVER, JH , (2001) HALOGEN ETCHING OF SI VIA ATOMIC-SCALE PROCESSES.PROGRESS IN SURFACE SCIENCE. VOL. 68. ISSUE 4-6. P. 189 -230 33 42% 54
10 IIMORI, T , HATTORI, K , SHUDO, K , IWAKI, T , UETA, M , KOMORI, F , (1998) LASER-INDUCED MONO-ATOMIC-LAYER ETCHING ON CL-ADSORBED SI(111) SURFACES.APPLIED SURFACE SCIENCE. VOL. 130. ISSUE . P. 90 -95 20 83% 1

Classes with closest relation at Level 1



Rank Class id link
1 5594 SOLID STATE TECHNOLOGY//AFTER CORROSION//AL SI CU ETCHING
2 21652 ATOMIC LAYER ETCHING//NEUTRAL BEAM//NEUTRAL BEAM ETCHING
3 6615 HYDROGEN SURFACTANT//MANA SATELLITE//DISILANE
4 4915 GE100//CHEMISORPTION//SURFACE SCIENCE
5 5225 SI100 SURFACE//SURFACE SCIENCE//SURFACTANT MEDIATED EPITAXY
6 21995 INT JOINT IMTAS//ADSORBATE BONDING//ADSORBATE CHARGES
7 23066 SYNCHROTRON RADIATION STIMULATED ETCHING//ADV SCI TECHNOL IND//VACUUM UV PHOTOSCI
8 26085 INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//MAGNETIC TUNNEL JUNCTION MATERIALS
9 8898 FREEFORM FABRICAT S//NEMISIS TEAM//LCVD
10 16870 LASER INDUCED SURFACE PROCESS//LAMP2009//WIDE BANDGAP OXIDES

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