Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
24018 | 326 | 24.2 | 77% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
899 | 2 | SURFACE SCIENCE//SILICON//SCANNING TUNNELING MICROSCOPY | 11316 |
24018 | 1 | PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//ADSORBATE SUBSTRATE INTERACTIONS | 326 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | PHYSICOCHIM MOLEC ORSAY | address | 187332 | 1% | 100% | 2 |
2 | SURFACE STRUCTURE AND ROUGHNESS | authKW | 187332 | 1% | 100% | 2 |
3 | ADSORBATE SUBSTRATE INTERACTIONS | authKW | 93666 | 0% | 100% | 1 |
4 | AG MULTILAYER ISLANDS | authKW | 93666 | 0% | 100% | 1 |
5 | ANISOTROPIC PROFILE | authKW | 93666 | 0% | 100% | 1 |
6 | ATOMIC AND MOLECULAR STUDIES | authKW | 93666 | 0% | 100% | 1 |
7 | BR SI001 2 X 1 | authKW | 93666 | 0% | 100% | 1 |
8 | BR SI100 2 X 1 | authKW | 93666 | 0% | 100% | 1 |
9 | CHLORIDE VAPOR DEPOSITION PROCESSES SEMICONDUCTING SILICON | authKW | 93666 | 0% | 100% | 1 |
10 | CHLORINE DIFFUSION | authKW | 93666 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 3839 | 56% | 0% | 184 |
2 | Chemistry, Physical | 1372 | 44% | 0% | 142 |
3 | Materials Science, Coatings & Films | 849 | 12% | 0% | 39 |
4 | Physics, Applied | 672 | 31% | 0% | 100 |
5 | Physics, Multidisciplinary | 131 | 11% | 0% | 35 |
6 | Physics, Atomic, Molecular & Chemical | 56 | 6% | 0% | 21 |
7 | Nanoscience & Nanotechnology | 31 | 4% | 0% | 14 |
8 | Materials Science, Multidisciplinary | 14 | 8% | 0% | 27 |
9 | Engineering, Electrical & Electronic | 0 | 4% | 0% | 12 |
10 | Crystallography | 0 | 1% | 0% | 3 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | PHYSICOCHIM MOLEC ORSAY | 187332 | 1% | 100% | 2 |
2 | CIENCIA MAT FIS SUPERFICIES | 93666 | 0% | 100% | 1 |
3 | ION BEAM ENGN EXPTL SAKYO KU | 93666 | 0% | 100% | 1 |
4 | PHYSICOCHIM MOLEC ORSAYCNRS | 93666 | 0% | 100% | 1 |
5 | PL ENGN PHYS CLARK HALL 217 | 93666 | 0% | 100% | 1 |
6 | UTILISAT RAYONEMENT SYCHROTRON | 93666 | 0% | 100% | 1 |
7 | VENABLE KENAN S | 48308 | 3% | 6% | 9 |
8 | CNRS ELE FONDAMENTALE | 46832 | 0% | 50% | 1 |
9 | CNRS ELECT FONDAMENTALE | 46832 | 0% | 50% | 1 |
10 | NAKAYAMA | 46832 | 0% | 50% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SURFACE SCIENCE | 21202 | 24% | 0% | 78 |
2 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1701 | 1% | 0% | 4 |
3 | PHYSICAL REVIEW B | 1425 | 16% | 0% | 51 |
4 | APPLIED SURFACE SCIENCE | 1387 | 7% | 0% | 23 |
5 | PROGRESS IN SURFACE SCIENCE | 1186 | 1% | 0% | 3 |
6 | VESTNIK ROSSIISKOI AKADEMII NAUK | 916 | 0% | 1% | 1 |
7 | ANNALES DE PHYSIQUE | 674 | 1% | 0% | 3 |
8 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 665 | 3% | 0% | 10 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 552 | 0% | 1% | 1 |
10 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 547 | 3% | 0% | 10 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ALDAO, CM , AGRAWAL, A , BUTERA, RE , WEAVER, JH , (2009) ATOMIC PROCESSES DURING CL SUPERSATURATION ETCHING OF SI(100)-(2X1).PHYSICAL REVIEW B. VOL. 79. ISSUE 12. P. - | 23 | 85% | 6 |
2 | BISWAS, S , NARASIMHAN, S , (2016) BROMINE AS A PREFERRED ETCHANT FOR SI SURFACES IN THE SUPERSATURATION REGIME: INSIGHTS FROM CALCULATIONS OF ATOMIC SCALE REACTION PATHWAYS.JOURNAL OF PHYSICAL CHEMISTRY C. VOL. 120. ISSUE 28. P. 15230 -15234 | 23 | 70% | 0 |
3 | TANAKA, M , SHUDO, K , NUMATA, M , (2006) ADSORPTION SITE PREFERENCE OF BR ON SI(111)-7X7.PHYSICAL REVIEW B. VOL. 73. ISSUE 11. P. - | 24 | 83% | 3 |
4 | AGRAWAL, A , BUTERA, RE , WEAVER, JH , (2007) CL INSERTION ON SI(100)-(2X1): ETCHING UNDER CONDITIONS OF SUPERSATURATION.PHYSICAL REVIEW LETTERS. VOL. 98. ISSUE 13. P. - | 17 | 85% | 6 |
5 | DE WIJS, GA , DE VITA, A , SELLONI, A , (1998) FIRST-PRINCIPLES STUDY OF CHLORINE ADSORPTION AND REACTIONS ON SI(100).PHYSICAL REVIEW B. VOL. 57. ISSUE 16. P. 10021 -10029 | 29 | 60% | 43 |
6 | TANAKA, M , YAMAKAWA, E , SHIRAO, T , SHUDO, K , (2003) REACTIVITY OF HALOGENS ON A SI(111) SURFACE STUDIED BY SURFACE DIFFERENTIAL REFLECTIVITY.PHYSICAL REVIEW B. VOL. 68. ISSUE 16. P. - | 23 | 68% | 9 |
7 | SHUDO, K , KIRIMURA, T , TANAKA, Y , ISHIKAWA, T , TANAKA, M , (2006) QUANTITATIVE ANALYSIS OF THERMALLY INDUCED DESORPTION DURING HALOGEN-ETCHING OF A SILICON (111) SURFACE.SURFACE SCIENCE. VOL. 600. ISSUE 16. P. 3147 -3153 | 18 | 75% | 1 |
8 | XU, GJ , NAKAYAMA, KS , TRENHAILE, BR , ALDAO, CM , WEAVER, JH , (2003) EQUILIBRIUM MORPHOLOGIES FOR CL-ROUGHENED SI(100) AT 700-750 K: DEPENDENCE ON CL CONCENTRATION.PHYSICAL REVIEW B. VOL. 67. ISSUE 12. P. - | 17 | 85% | 8 |
9 | ALDAO, CM , WEAVER, JH , (2001) HALOGEN ETCHING OF SI VIA ATOMIC-SCALE PROCESSES.PROGRESS IN SURFACE SCIENCE. VOL. 68. ISSUE 4-6. P. 189 -230 | 33 | 42% | 54 |
10 | IIMORI, T , HATTORI, K , SHUDO, K , IWAKI, T , UETA, M , KOMORI, F , (1998) LASER-INDUCED MONO-ATOMIC-LAYER ETCHING ON CL-ADSORBED SI(111) SURFACES.APPLIED SURFACE SCIENCE. VOL. 130. ISSUE . P. 90 -95 | 20 | 83% | 1 |
Classes with closest relation at Level 1 |