Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
24088 | 324 | 22.6 | 60% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
2384 | 2 | IR LASERS//OPT SENSORS SPECT//SOVIET PHYSICS SEMICONDUCTORS-USSR | 4257 |
24088 | 1 | SPE OPHOTOMETRY//BLACK SILICON//SILICON SURFACE MICROSTRUCTURE | 324 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SPE OPHOTOMETRY | address | 243042 | 2% | 37% | 7 |
2 | BLACK SILICON | authKW | 172610 | 4% | 13% | 14 |
3 | SILICON SURFACE MICROSTRUCTURE | authKW | 125658 | 1% | 67% | 2 |
4 | EFZN | address | 106021 | 1% | 38% | 3 |
5 | CONICAL MICROSTRUCTURES | authKW | 94244 | 0% | 100% | 1 |
6 | DEEP TRENCH MICROSTRUCTURE | authKW | 94244 | 0% | 100% | 1 |
7 | DEV ENGN COMMANDSCI TECHNOL | address | 94244 | 0% | 100% | 1 |
8 | DOPING SILICON WITH SULFUR | authKW | 94244 | 0% | 100% | 1 |
9 | FDN TECHNOL HELLAS 4 | address | 94244 | 0% | 100% | 1 |
10 | GAS DISCHARGE IMAGING DEVICE | authKW | 94244 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 1833 | 48% | 0% | 157 |
2 | Physics, Condensed Matter | 1797 | 40% | 0% | 128 |
3 | Materials Science, Multidisciplinary | 267 | 23% | 0% | 73 |
4 | Optics | 148 | 10% | 0% | 33 |
5 | Physics, Multidisciplinary | 98 | 10% | 0% | 31 |
6 | Nanoscience & Nanotechnology | 52 | 5% | 0% | 17 |
7 | Engineering, Electrical & Electronic | 30 | 8% | 0% | 27 |
8 | Materials Science, Coatings & Films | 18 | 2% | 0% | 7 |
9 | Instruments & Instrumentation | 8 | 2% | 0% | 8 |
10 | Nuclear Science & Technology | 1 | 1% | 0% | 4 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SPE OPHOTOMETRY | 243042 | 2% | 37% | 7 |
2 | EFZN | 106021 | 1% | 38% | 3 |
3 | DEV ENGN COMMANDSCI TECHNOL | 94244 | 0% | 100% | 1 |
4 | FDN TECHNOL HELLAS 4 | 94244 | 0% | 100% | 1 |
5 | JKU | 94244 | 0% | 100% | 1 |
6 | LASER LIFE | 94244 | 0% | 100% | 1 |
7 | MINIST EDUCENGN OPT RUMENT SYST | 94244 | 0% | 100% | 1 |
8 | STATE ELECT THIN FILM INTEGRATED DEV | 94244 | 0% | 100% | 1 |
9 | STATE ORATCNY ELECT THIN FILMS INTEGRATE | 94244 | 0% | 100% | 1 |
10 | UMR 76 01 | 94244 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SEMICONDUCTORS | 5032 | 6% | 0% | 19 |
2 | FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 2596 | 1% | 1% | 2 |
3 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 2417 | 4% | 0% | 12 |
4 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1322 | 4% | 0% | 14 |
5 | JOURNAL OF APPLIED PHYSICS | 1245 | 12% | 0% | 38 |
6 | APPLIED PHYSICS REVIEWS | 990 | 0% | 1% | 1 |
7 | APPLIED PHYSICS EXPRESS | 919 | 2% | 0% | 6 |
8 | SOLID STATE COMMUNICATIONS | 808 | 5% | 0% | 15 |
9 | APPLIED PHYSICS LETTERS | 637 | 9% | 0% | 28 |
10 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 544 | 2% | 0% | 7 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GIMPEL, T , GUENTHER, KM , KONTERMANN, S , SCHADE, W , (2014) CURRENT-VOLTAGE CHARACTERISTIC AND SHEET RESISTANCES AFTER ANNEALING OF FEMTOSECOND LASER PROCESSED SULFUR EMITTERS FOR SILICON SOLAR CELLS.APPLIED PHYSICS LETTERS. VOL. 105. ISSUE 5. P. - | 24 | 83% | 0 |
2 | HU, SX , HAN, PD , LIANG, P , XING, YP , LOU, SS , (2014) METALLIC CONDUCTION BEHAVIOR IN SELENIUM-HYPERDOPED SILICON.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 17. ISSUE . P. 134-137 | 23 | 82% | 1 |
3 | FRANTA, B , PASTOR, D , GANDHI, HH , REKEMEYER, PH , GRADECAK, S , AZIZ, MJ , MAZUR, E , (2015) SIMULTANEOUS HIGH CRYSTALLINITY AND SUB-BANDGAP OPTICAL ABSORPTANCE IN HYPERDOPED BLACK SILICON USING NANOSECOND LASER ANNEALING.JOURNAL OF APPLIED PHYSICS. VOL. 118. ISSUE 22. P. - | 29 | 55% | 2 |
4 | HU, SX , HAN, PD , MI, YH , XING, YP , LIANG, P , FAN, YJ , (2013) DEPENDENCE OF THE OPTOELECTRONIC PROPERTIES OF SELENIUM-HYPERDOPED SILICON ON THE ANNEALING TEMPERATURE.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 16. ISSUE 3. P. 987-991 | 20 | 83% | 2 |
5 | WANG, KF , LIU, PG , QU, SC , WANG, YX , WANG, ZG , (2015) OPTICAL AND ELECTRICAL PROPERTIES OF TEXTURED SULFUR-HYPERDOPED SILICON: A THERMAL ANNEALING STUDY.JOURNAL OF MATERIALS SCIENCE. VOL. 50. ISSUE 9. P. 3391 -3398 | 20 | 80% | 0 |
6 | WARRENDER, JM , (2016) LASER HYPERDOPING SILICON FOR ENHANCED INFRARED OPTOELECTRONIC PROPERTIES.APPLIED PHYSICS REVIEWS. VOL. 3. ISSUE 3. P. - | 34 | 43% | 0 |
7 | UMEZU, I , WARRENDER, JM , CHARNVANICHBORIKARN, S , KOHNO, A , WILLIAMS, JS , TABBAL, M , PAPAZOGLOU, DG , ZHANG, XC , AZIZ, MJ , (2013) EMERGENCE OF VERY BROAD INFRARED ABSORPTION BAND BY HYPERDOPING OF SILICON WITH CHALCOGENS.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 21. P. - | 18 | 78% | 11 |
8 | DU, LY , WU, ZM , SU, YJ , LI, R , TANG, F , LI, SB , ZHANG, T , JIANG, YD , (2016) SE DOPING OF SILICON WITH SI/SE BILAYER FILMS PREPARED BY FEMTOSECOND-LASER IRRADIATION.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 54. ISSUE . P. 51 -56 | 19 | 73% | 0 |
9 | WANG, KF , SHAO, HZ , LIU, K , QU, SC , WANG, YX , WANG, ZG , (2015) POSSIBLE ATOMIC STRUCTURES RESPONSIBLE FOR THE SUB-BANDGAP ABSORPTION OF CHALCOGEN-HYPERDOPED SILICON.APPLIED PHYSICS LETTERS. VOL. 107. ISSUE 11. P. - | 16 | 84% | 0 |
10 | DONG, X , LI, N , LIANG, C , SUN, HB , FENG, GJ , ZHU, Z , SHAO, HZ , RONG, XM , ZHAO, L , ZHUANG, J , (2013) STRONG MID-INFRARED ABSORPTION AND HIGH CRYSTALLINITY OF MICROSTRUCTURED SILICON FORMED BY FEMTOSECOND LASER IRRADIATION IN NF3 ATMOSPHERE.APPLIED PHYSICS EXPRESS. VOL. 6. ISSUE 8. P. - | 16 | 84% | 2 |
Classes with closest relation at Level 1 |