Class information for:
Level 1: CHEMICALLY AMPLIFIED RESIST//LINE EDGE ROUGHNESS//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
3013 2086 22.0 65%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
314 3       ULTRAMICROSCOPY//MICROSCOPY//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 39933
720 2             JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//CHEMICALLY AMPLIFIED RESIST//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 12751
3013 1                   CHEMICALLY AMPLIFIED RESIST//LINE EDGE ROUGHNESS//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 2086

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 CHEMICALLY AMPLIFIED RESIST authKW 1122454 6% 61% 126
2 LINE EDGE ROUGHNESS authKW 966002 5% 61% 109
3 JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY journal 717782 15% 16% 308
4 PHOTORESIST authKW 451172 7% 20% 153
5 EUV LITHOGRAPHY authKW 450190 4% 42% 74
6 MOLECULAR RESIST authKW 442747 2% 92% 33
7 LINE WIDTH ROUGHNESS authKW 373516 2% 73% 35
8 RESIST authKW 364761 5% 26% 95
9 CHEMICAL AMPLIFICATION authKW 340292 2% 51% 46
10 PHOTOACID GENERATOR authKW 252758 2% 35% 49

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Nanoscience & Nanotechnology 18874 32% 0% 674
2 Polymer Science 13575 31% 0% 642
3 Physics, Applied 12006 49% 0% 1019
4 Engineering, Electrical & Electronic 6360 33% 0% 696
5 Optics 1884 14% 0% 285
6 Materials Science, Multidisciplinary 310 12% 0% 249
7 Chemistry, Physical 69 7% 0% 152
8 Materials Science, Coatings & Films 62 2% 0% 36
9 Chemistry, Multidisciplinary 40 6% 0% 129
10 Physics, Condensed Matter 12 4% 0% 76

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 NEW TECHNOL DEV SECT 131728 0% 100% 9
2 POLYMER CHEM NANOTECHNOL 102455 0% 100% 7
3 SCI IND 102442 9% 4% 185
4 ADV MAT DEV 1 98381 1% 61% 11
5 EUVL 71714 0% 70% 7
6 ADV IST 58546 0% 100% 4
7 ADV MAT DEV 2 58546 0% 100% 4
8 MICROELECT MAT DEV S 58546 0% 100% 4
9 ADV SCI TECHNOL IND 49591 2% 9% 36
10 AZ ELECT MAT 45735 0% 63% 5

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 717782 15% 16% 308
2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 121260 18% 2% 371
3 JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS 72569 3% 7% 68
4 MICROELECTRONIC ENGINEERING 44593 8% 2% 176
5 JAPANESE JOURNAL OF APPLIED PHYSICS 12961 6% 1% 119
6 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 9940 7% 0% 146
7 JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS 8651 1% 5% 12
8 SOLID STATE TECHNOLOGY 3448 1% 1% 21
9 CHEMISTRY OF MATERIALS 3206 3% 0% 63
10 MICROLITHOGRAPHY WORLD 2528 0% 6% 3

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 CHEMICALLY AMPLIFIED RESIST 1122454 6% 61% 126 Search CHEMICALLY+AMPLIFIED+RESIST Search CHEMICALLY+AMPLIFIED+RESIST
2 LINE EDGE ROUGHNESS 966002 5% 61% 109 Search LINE+EDGE+ROUGHNESS Search LINE+EDGE+ROUGHNESS
3 PHOTORESIST 451172 7% 20% 153 Search PHOTORESIST Search PHOTORESIST
4 EUV LITHOGRAPHY 450190 4% 42% 74 Search EUV+LITHOGRAPHY Search EUV+LITHOGRAPHY
5 MOLECULAR RESIST 442747 2% 92% 33 Search MOLECULAR+RESIST Search MOLECULAR+RESIST
6 LINE WIDTH ROUGHNESS 373516 2% 73% 35 Search LINE+WIDTH+ROUGHNESS Search LINE+WIDTH+ROUGHNESS
7 RESIST 364761 5% 26% 95 Search RESIST Search RESIST
8 CHEMICAL AMPLIFICATION 340292 2% 51% 46 Search CHEMICAL+AMPLIFICATION Search CHEMICAL+AMPLIFICATION
9 PHOTOACID GENERATOR 252758 2% 35% 49 Search PHOTOACID+GENERATOR Search PHOTOACID+GENERATOR
10 EUV RESIST 244267 1% 76% 22 Search EUV+RESIST Search EUV+RESIST

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 ITO, H , (2005) CHEMICAL AMPLIFICATION RESISTS FOR MICROLITHOGRAPHY.MICROLITHOGRAPHY - MOLECULAR IMPRINTING. VOL. 172. ISSUE . P. 37 -245 117 52% 333
2 KOZAWA, T , TAGAWA, S , (2010) RADIATION CHEMISTRY IN CHEMICALLY AMPLIFIED RESISTS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 49. ISSUE 3. P. - 106 63% 49
3 ITANI, T , KOZAWA, T , (2013) RESIST MATERIALS AND PROCESSES FOR EXTREME ULTRAVIOLET LITHOGRAPHY.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 52. ISSUE 1. P. - 67 91% 13
4 KOZAWA, T , SANTILLAN, JJ , ITANI, T , (2014) EFFECTS OF DEPROTONATION EFFICIENCY OF PROTECTED UNITS ON LINE EDGE ROUGHNESS AND STOCHASTIC DEFECT GENERATION IN CHEMICALLY AMPLIFIED RESIST PROCESSES FOR 11 NM NODE OF EXTREME ULTRAVIOLET LITHOGRAPHY.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 11. P. - 44 100% 0
5 KOZAWA, T , SANTILLAN, JJ , ITANI, T , (2014) FEASIBILITY STUDY OF SUB-10-NM HALF-PITCH FABRICATION BY CHEMICALLY AMPLIFIED RESIST PROCESSES OF EXTREME ULTRAVIOLET LITHOGRAPHY: I. LATENT IMAGE QUALITY PREDICTED BY PROBABILITY DENSITY MODEL.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 10. P. - 42 100% 1
6 KOZAWA, T , (2012) LOWER LIMIT OF LINE EDGE ROUGHNESS IN HIGH-DOSE EXPOSURE OF CHEMICALLY AMPLIFIED EXTREME ULTRAVIOLET RESISTS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 6. P. - 43 98% 1
7 KOZAWA, T , TAGAWA, S , SANTILLAN, JJ , TORIUMI, M , ITANI, T , (2008) EFFECTS OF RATE CONSTANT FOR DEPROTECTION ON LATENT IMAGE FORMATION IN CHEMICALLY AMPLIFIED EXTREME ULTRAVIOLET RESISTS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 47. ISSUE 6. P. 4926 -4931 47 98% 4
8 PRABHU, VM , KANG, SH , VANDERHART, DL , SATIJA, SK , LIN, EK , WU, WL , (2011) PHOTORESIST LATENT AND DEVELOPER IMAGES AS PROBED BY NEUTRON REFLECTIVITY METHODS.ADVANCED MATERIALS. VOL. 23. ISSUE 3. P. 388 -408 49 83% 11
9 KOZAWA, T , TAGAWA, S , (2011) DETERMINATION OF OPTIMUM THERMALIZATION DISTANCE BASED ON TRADE-OFF RELATIONSHIP BETWEEN RESOLUTION, LINE EDGE ROUGHNESS, AND SENSITIVITY OF CHEMICALLY AMPLIFIED EXTREME ULTRAVIOLET RESISTS.JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY. VOL. 24. ISSUE 2. P. 137-142 43 98% 2
10 KOZAWA, T , YAMAMOTO, H , TAGAWA, S , (2010) RELATIONSHIP BETWEEN LINE EDGE ROUGHNESS AND FLUCTUATION OF ACID CONCENTRATION IN CHEMICALLY AMPLIFIED RESIST.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 49. ISSUE 9. P. - 44 98% 0

Classes with closest relation at Level 1


Rank Class id link
1 19724 PHOTOBASE GENERATOR//BASE AMPLIFIER//BASE PROLIFERATION REACTION
2 18745 ELECTRON BEAM LITHOGRAPHY//HSQ//HYDROGEN SILSESQUIOXANE
3 25108 IMMERSION LITHOGRAPHY//DOUBLE PATTERNING//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY
4 22144 EUV LITHOG//EXTREME ULTRAVIOLET LITHOGRAPHY//EUVL
5 8140 SOLID STATE TECHNOLOGY//DRY DEVELOPMENT//WT ADDITIVITY
6 33481 LITHOGRAPHY SIMULATION//VUV LITHOG//RESIST REFLOW PROCESS
7 23619 PHOTOSENSITIVE POLYIMIDE//REACTION DEVELOPMENT PATTERNING RDP//POLYISOIMIDE
8 5528 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//PROXIMITY EFFECT CORRECTION//ELECTRON BEAM LITHOGRAPHY
9 10360 OPTICAL LITHOGRAPHY//PHASE SHIFTING MASK//OPTICAL PROXIMITY CORRECTION
10 26726 MSB ARGE D//5 NORBORNENE 2 2 DIMETHANOL//ARTIFICIAL BREAST IMPLANT PACK

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