Class information for:
Level 1: LEHRSTUHL HALBLEITERTECH//MOS TUNNEL STRUCTURE//SI MIS TET

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
23114 358 14.7 40%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
3264 2             SOLAR CELLS//SOLID-STATE ELECTRONICS//OPEN CIRCUIT VOLTAGE DECAY OCVD 1937
23114 1                   LEHRSTUHL HALBLEITERTECH//MOS TUNNEL STRUCTURE//SI MIS TET 358

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 LEHRSTUHL HALBLEITERTECH address 321097 2% 47% 8
2 MOS TUNNEL STRUCTURE authKW 272938 1% 80% 4
3 SI MIS TET authKW 255881 1% 100% 3
4 INVERSION BASE LAYER authKW 170587 1% 100% 2
5 NETZWERKTHEORIE ALTUNGSTECH address 170587 1% 100% 2
6 TUNNEL EMITTER TRANSISTORS authKW 170587 1% 100% 2
7 ELEKT BAUELEMENTE ALTUNGSTECH address 95952 1% 38% 3
8 32 NM AND 22 NM TECHNOLOGY NODES authKW 85294 0% 100% 1
9 ASYMMETRICAL DG ADG authKW 85294 0% 100% 1
10 CONFOCAL SYSTEMS authKW 85294 0% 100% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Condensed Matter 3665 53% 0% 189
2 Physics, Applied 2407 53% 0% 188
3 Engineering, Electrical & Electronic 1381 37% 0% 133
4 Nanoscience & Nanotechnology 52 5% 0% 18
5 Materials Science, Multidisciplinary 28 10% 0% 35
6 Materials Science, Coatings & Films 10 2% 0% 6
7 Optics 7 3% 0% 12
8 Instruments & Instrumentation 4 2% 0% 7
9 Microscopy 1 0% 0% 1
10 Materials Science, Ceramics 0 1% 0% 2

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 LEHRSTUHL HALBLEITERTECH 321097 2% 47% 8
2 NETZWERKTHEORIE ALTUNGSTECH 170587 1% 100% 2
3 ELEKT BAUELEMENTE ALTUNGSTECH 95952 1% 38% 3
4 DEVICES PHYS MICROELECT 85294 0% 100% 1
5 FIS DISPOSITIVOS 85294 0% 100% 1
6 LEHRSTUHL H LEITERTECH 85294 0% 100% 1
7 SCI SEMICOND DEVICES 85294 0% 100% 1
8 THEORET ELEKTROTECH MICROELEKTRON 85294 0% 100% 1
9 LASSIDTI 85292 1% 50% 2
10 LEHRSTUHL HALBLEITERTECHN 85292 1% 50% 2

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEMICONDUCTORS 51932 18% 1% 64
2 IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION 18336 3% 2% 12
3 SOLID-STATE ELECTRONICS 17533 13% 0% 45
4 SOVIET PHYSICS SEMICONDUCTORS-USSR 16640 9% 1% 33
5 MICROWAVES 7930 1% 5% 2
6 PERIODICA POLYTECHNICA-ELECTRICAL ENGINEERING 7106 0% 8% 1
7 ELECTRON DEVICE LETTERS 4526 1% 1% 4
8 PISMA V ZHURNAL TEKHNICHESKOI FIZIKI 2852 4% 0% 13
9 IEEE TRANSACTIONS ON ELECTRON DEVICES 2693 6% 0% 22
10 TECHNICAL PHYSICS LETTERS 2568 4% 0% 14

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 MOS TUNNEL STRUCTURE 272938 1% 80% 4 Search MOS+TUNNEL+STRUCTURE Search MOS+TUNNEL+STRUCTURE
2 SI MIS TET 255881 1% 100% 3 Search SI+MIS+TET Search SI+MIS+TET
3 INVERSION BASE LAYER 170587 1% 100% 2 Search INVERSION+BASE+LAYER Search INVERSION+BASE+LAYER
4 TUNNEL EMITTER TRANSISTORS 170587 1% 100% 2 Search TUNNEL+EMITTER+TRANSISTORS Search TUNNEL+EMITTER+TRANSISTORS
5 32 NM AND 22 NM TECHNOLOGY NODES 85294 0% 100% 1 Search 32+NM+AND+22+NM+TECHNOLOGY+NODES Search 32+NM+AND+22+NM+TECHNOLOGY+NODES
6 ASYMMETRICAL DG ADG 85294 0% 100% 1 Search ASYMMETRICAL+DG+ADG Search ASYMMETRICAL+DG+ADG
7 CONFOCAL SYSTEMS 85294 0% 100% 1 Search CONFOCAL+SYSTEMS Search CONFOCAL+SYSTEMS
8 DG MOS STRUCTURE 85294 0% 100% 1 Search DG+MOS+STRUCTURE Search DG+MOS+STRUCTURE
9 DOUBLE GATE DG SILICON ON INSULATOR SOI 85294 0% 100% 1 Search DOUBLE+GATE+DG+SILICON+ON+INSULATOR+SOI Search DOUBLE+GATE+DG+SILICON+ON+INSULATOR+SOI
10 FRANZ DISPERSION RELATION 85294 0% 100% 1 Search FRANZ+DISPERSION+RELATION Search FRANZ+DISPERSION+RELATION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 KASHERININOV, PG , TOMASOV, AA , BEREGULIN, EV , (2011) FAST OPTICAL DETECTING MEDIA BASED ON SEMICONDUCTOR NANOSTRUCTURES FOR RECORDING IMAGES OBTAINED USING CHARGES OF FREE PHOTOCARRIERS.SEMICONDUCTORS. VOL. 45. ISSUE 1. P. 1 -20 11 85% 0
2 TYAGINOV, SE , VEXLER, MI , SHULEKIN, AF , GREKHOV, IV , (2006) EFFECT OF THE SPATIAL DISTRIBUTION OF SIO2 THICKNESS ON THE SWITCHING BEHAVIOR OF BISTABLE MOS TUNNEL STRUCTURES.MICROELECTRONIC ENGINEERING. VOL. 83. ISSUE 2. P. 376-380 10 77% 2
3 TYAGINOV, SE , VEXLER, MI , SHULEKIN, AF , GREKHOV, IV , (2006) INFLUENCE OF INSULATOR THICKNESS NONUNIFORMITY ON THE SWITCHING OF THE AL/SIO2/N-SI TUNNEL MOS STRUCTURE AT REVERSE BIAS.SEMICONDUCTORS. VOL. 40. ISSUE 3. P. 309-313 9 82% 1
4 TORKHOV, NA , NOVIKOV, VA , (2011) THE EFFECT OF THE PERIPHERY OF METAL-SEMICONDUCTOR SCHOTTKY-BARRIER CONTACTS ON THEIR ELECTRICAL CHARACTERISTICS.SEMICONDUCTORS. VOL. 45. ISSUE 1. P. 69 -84 6 100% 2
5 CHOI, WK , DELIMA, JJ , OWEN, AE , REYNOLDS, S , (1989) A PHENOMENOLOGICAL MODEL OF SWITCHING IN METAL THIN INSULATOR-SEMICONDUCTOR-SEMICONDUCTOR DEVICES - A DEVELOPMENT OF THE ANALOGY WITH THE THYRISTOR.JOURNAL OF APPLIED PHYSICS. VOL. 65. ISSUE 5. P. 2102-2110 13 93% 0
6 CHOI, WK , OWEN, AE , (1990) A THYRISTOR MODEL OF SWITCHING IN METAL-THIN INSULATOR-SEMICONDUCTOR-SEMICONDUCTOR DEVICES - THE INFLUENCE OF INSULATING LAYER AND ILLUMINATION.JOURNAL OF APPLIED PHYSICS. VOL. 68. ISSUE 12. P. 6447-6452 12 92% 4
7 ZOLOMY, I , (1985) A SURVEY OF NEW BIPOLAR AMPLIFYING AND NEGATIVE-RESISTANCE DEVICES.SOLID-STATE ELECTRONICS. VOL. 28. ISSUE 6. P. 537 -547 20 71% 6
8 REZNIKOV, BI , (2001) THE INFLUENCE OF THE ILLUMINATION DIRECTION ON THE FIELD DISTRIBUTION IN HIGH-RESISTIVITY METAL-SEMICONDUCTOR STRUCTURES.SEMICONDUCTORS. VOL. 35. ISSUE 10. P. 1166-1170 7 100% 0
9 REZNIKOV, BI , (1997) RELAXATION OF POST-ILLUMINATION ELECTRIC FIELDS IN STRONGLY BIASED HIGH-RESISTANCE STRUCTURES WITH A SINGLE DEEP IMPURITY LEVEL.PHYSICS OF THE SOLID STATE. VOL. 39. ISSUE 10. P. 1582 -1589 10 77% 0
10 VEXLER, MI , GREKHOV, IV , SHULEKIN, AF , (2005) ON THE EFFECT OF TRANSVERSE QUANTUM CONFINEMENT ON THE ELECTRICAL CHARACTERISTICS OF A SUBMICROMETER-SIZED TUNNEL MOS STRUCTURE.SEMICONDUCTORS. VOL. 39. ISSUE 12. P. 1381-1386 8 73% 3

Classes with closest relation at Level 1


Rank Class id link
1 32280 AUGER TRANSISTOR//SELF CONSISTENT QUANTUM WELLS//44 THIO BIS BENZENETHIOLATE
2 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
3 17551 BACKWARD DIODES//OPTOELECTRONIC SWITCH//MILLIMETER WAVE DETECTORS
4 24872 DEVICE FUNCT SECT//DIFFUSION TEMPERATURE//MIS SOLAR CELLS
5 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
6 28032 MIS TUNNEL DIODE//ANODIC OXIDE ANO//COMPOSED CAPACITOR
7 13018 CAF2//METAL INSULATOR HETEROSTRUCTURE//SOLID STATE OPT
8 21482 CARL EMILY FUCHS MICROELECT//CEFIM//HOT CARRIER LUMINESCENCE
9 37353 OPTICAL ANALOG SIGNAL TRANSMISSION//COOLED LEDS//GALVANICALLY ISOLATED AMPLIFIER
10 29799 SOVIET PHYSICS SEMICONDUCTORS-USSR//UKRAINSKII FIZICHESKII ZHURNAL//NUCL INVEST

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