Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
7339 | 1378 | 19.0 | 55% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
667 | 3 | JOURNAL OF CRYSTAL GROWTH//CZOCHRALSKI METHOD//THERMOCAPILLARY CONVECTION | 9925 |
1888 | 2 | JOURNAL OF CRYSTAL GROWTH//CZOCHRALSKI METHOD//THERMOCAPILLARY CONVECTION | 5985 |
7339 | 1 | CZOCHRALSKI METHOD//MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD//CZOCHRALSKI CRYSTAL GROWTH | 1378 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | CZOCHRALSKI METHOD | authKW | 1110891 | 15% | 24% | 209 |
2 | MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD | authKW | 504768 | 2% | 84% | 27 |
3 | CZOCHRALSKI CRYSTAL GROWTH | authKW | 482529 | 2% | 78% | 28 |
4 | JOURNAL OF CRYSTAL GROWTH | journal | 333408 | 49% | 2% | 681 |
5 | CZOCHRALSKI | authKW | 313707 | 3% | 31% | 45 |
6 | SEMICONDUCTING SILICON | authKW | 261274 | 6% | 15% | 79 |
7 | SI MELT | authKW | 191500 | 1% | 79% | 11 |
8 | FLUID FLOWS | authKW | 161442 | 3% | 17% | 42 |
9 | CRYSTAL GROWTH TECHNOL TEAM | address | 155103 | 1% | 100% | 7 |
10 | CZ SI GROWTH | authKW | 155103 | 1% | 100% | 7 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Crystallography | 64942 | 58% | 0% | 802 |
2 | Physics, Applied | 11575 | 58% | 0% | 803 |
3 | Materials Science, Multidisciplinary | 10053 | 59% | 0% | 812 |
4 | Mechanics | 925 | 10% | 0% | 136 |
5 | Thermodynamics | 769 | 7% | 0% | 91 |
6 | Engineering, Mechanical | 333 | 6% | 0% | 81 |
7 | Materials Science, Coatings & Films | 219 | 3% | 0% | 46 |
8 | Electrochemistry | 133 | 3% | 0% | 45 |
9 | Physics, Fluids & Plasmas | 128 | 3% | 0% | 40 |
10 | Materials Science, Characterization, Testing | 55 | 1% | 0% | 13 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CRYSTAL GROWTH TECHNOL TEAM | 155103 | 1% | 100% | 7 |
2 | MAT SCI WW 6 | 113951 | 0% | 86% | 6 |
3 | SILICON MELT ADV PROJECT | 108568 | 1% | 70% | 7 |
4 | LTSE | 72374 | 1% | 47% | 7 |
5 | BIOL FUNCT INFORMAT RUMENTS | 66473 | 0% | 100% | 3 |
6 | AFRLSNHC | 49853 | 0% | 75% | 3 |
7 | PROC ENGN VT | 44315 | 0% | 100% | 2 |
8 | SECOND TERM PROJECT 985 | 44315 | 0% | 100% | 2 |
9 | CONSORTIUM CRYSTAL GROWTH | 39561 | 0% | 36% | 5 |
10 | MAT SCI WW6 | 26370 | 0% | 24% | 5 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 333408 | 49% | 2% | 681 |
2 | CRYSTAL RESEARCH AND TECHNOLOGY | 20669 | 6% | 1% | 78 |
3 | PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 3437 | 1% | 2% | 10 |
4 | PHYSICOCHEMICAL HYDRODYNAMICS | 2656 | 0% | 2% | 6 |
5 | JOURNAL OF MATERIALS PROCESSING & MANUFACTURING SCIENCE | 2181 | 0% | 2% | 4 |
6 | MAGNETOHYDRODYNAMICS | 2031 | 1% | 1% | 7 |
7 | INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER | 1804 | 3% | 0% | 38 |
8 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1297 | 3% | 0% | 43 |
9 | RARE METALS | 1217 | 1% | 1% | 11 |
10 | JOURNAL OF THERMOPHYSICS AND HEAT TRANSFER | 693 | 1% | 0% | 9 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | CZOCHRALSKI METHOD | 1110891 | 15% | 24% | 209 | Search CZOCHRALSKI+METHOD | Search CZOCHRALSKI+METHOD |
2 | MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD | 504768 | 2% | 84% | 27 | Search MAGNETIC+FIELD+ASSISTED+CZOCHRALSKI+METHOD | Search MAGNETIC+FIELD+ASSISTED+CZOCHRALSKI+METHOD |
3 | CZOCHRALSKI CRYSTAL GROWTH | 482529 | 2% | 78% | 28 | Search CZOCHRALSKI+CRYSTAL+GROWTH | Search CZOCHRALSKI+CRYSTAL+GROWTH |
4 | CZOCHRALSKI | 313707 | 3% | 31% | 45 | Search CZOCHRALSKI | Search CZOCHRALSKI |
5 | SEMICONDUCTING SILICON | 261274 | 6% | 15% | 79 | Search SEMICONDUCTING+SILICON | Search SEMICONDUCTING+SILICON |
6 | SI MELT | 191500 | 1% | 79% | 11 | Search SI+MELT | Search SI+MELT |
7 | FLUID FLOWS | 161442 | 3% | 17% | 42 | Search FLUID+FLOWS | Search FLUID+FLOWS |
8 | CZ SI GROWTH | 155103 | 1% | 100% | 7 | Search CZ+SI+GROWTH | Search CZ+SI+GROWTH |
9 | KYROPOULOS METHOD | 141099 | 1% | 58% | 11 | Search KYROPOULOS+METHOD | Search KYROPOULOS+METHOD |
10 | CONVECTIVE INTERACTIONS | 132945 | 0% | 100% | 6 | Search CONVECTIVE+INTERACTIONS | Search CONVECTIVE+INTERACTIONS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | WINKLER, J , NEUBERT, M , RUDOLPH, J , (2013) A REVIEW OF THE AUTOMATION OF THE CZOCHRALSKI CRYSTAL GROWTH PROCESS.ACTA PHYSICA POLONICA A. VOL. 124. ISSUE 2. P. 181-192 | 46 | 85% | 1 |
2 | TAVAKOLI, MH , OMID, S , MOHAMMADI-MANESH, E , (2011) INFLUENCE OF ACTIVE AFTERHEATER ON THE FLUID DYNAMICS AND HEAT TRANSFER DURING CZOCHRALSKI GROWTH OF OXIDE SINGLE CRYSTALS.CRYSTENGCOMM. VOL. 13. ISSUE 16. P. 5088-5093 | 29 | 100% | 3 |
3 | TAVAKOLI, MH , ABASI, TA , OMID, S , MOHAMMADI-MANESH, E , (2013) THE ROLE OF INNER AND INTERNAL RADIATION ON THE MELT GROWTH OF SAPPHIRE CRYSTAL.CRYSTAL RESEARCH AND TECHNOLOGY. VOL. 48. ISSUE 2. P. 58-68 | 27 | 100% | 2 |
4 | JANA, S , DOST, S , KUMAR, V , DURST, F , (2006) A NUMERICAL SIMULATION STUDY FOR THE CZOCHRALSKI GROWTH PROCESS OF SI UNDER MAGNETIC FIELD.INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE. VOL. 44. ISSUE 8-9. P. 554-573 | 33 | 94% | 17 |
5 | WINKLER, J , NEUBERT, M , RUDOLPH, J , (2010) NONLINEAR MODEL-BASED CONTROL OF THE CZOCHRALSKI PROCESS I: MOTIVATION, MODELING AND FEEDBACK CONTROLLER DESIGN.JOURNAL OF CRYSTAL GROWTH. VOL. 312. ISSUE 7. P. 1005-1018 | 34 | 81% | 13 |
6 | MITO, M , TSUKADA, T , HOZAWA, M , YOKOYAMA, C , LI, YR , IMAISHI, N , (2005) SENSITIVITY ANALYSES OF THE THERMOPHYSICAL PROPERTIES OF SILICON MELT AND CRYSTAL.MEASUREMENT SCIENCE AND TECHNOLOGY. VOL. 16. ISSUE 2. P. 457 -466 | 40 | 80% | 11 |
7 | TENG, R , LI, Y , CUI, B , CHANG, Q , XIAO, QH , ZHANG, GH , (2017) EXPERIMENT AND NUMERICAL SIMULATION OF MELT CONVECTION AND OXYGEN DISTRIBUTION IN 400-MM CZOCHRALSKI SILICON CRYSTAL GROWTH.RARE METALS. VOL. 36. ISSUE 2. P. 134 -141 | 24 | 92% | 0 |
8 | HAILING, TU , XIAO, QG , YU, G , ZHOU, QG , ZHANG, GH , QING, C , (2007) NUMERICAL ANALYSIS AND SIMULATION OF CZOCHRALSKI GROWTH PROCESSES FOR LARGE DIAMETER SILICON CRYSTALS.RARE METALS. VOL. 26. ISSUE 6. P. 521 -527 | 34 | 81% | 3 |
9 | XIAO, Q , DERBY, JJ , (1995) 3-DIMENSIONAL MELT FLOWS IN CZOCHRALSKI OXIDE-GROWTH - HIGH-RESOLUTION, MASSIVELY-PARALLEL, FINITE-ELEMENT COMPUTATIONS.JOURNAL OF CRYSTAL GROWTH. VOL. 152. ISSUE 3. P. 169-181 | 39 | 98% | 44 |
10 | ABE, K , NAGATO, Y , SUGIOKA, K , KUBO, M , TSUKADA, T , MARUYAMA, S , (2015) DEVELOPMENT OF A GLOBAL MODEL OF HEAT TRANSFER IN THE CZOCHRALSKI FURNACE TAKING INTO ACCOUNT SPECULAR REFLECTION AT THE CRYSTAL SURFACE.NUMERICAL HEAT TRANSFER PART A-APPLICATIONS. VOL. 67. ISSUE 12. P. 1311 -1323 | 31 | 69% | 2 |
Classes with closest relation at Level 1 |