Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
1985 | 2396 | 14.3 | 63% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1699 | 2 | HETEROJUNCTION BIPOLAR TRANSISTORS//SIGEHBT//HBT | 6741 |
1985 | 1 | HETEROJUNCTION BIPOLAR TRANSISTORS//HBT//HETEROJUNCTION BIPOLAR TRANSISTOR HBT | 2396 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | HETEROJUNCTION BIPOLAR TRANSISTORS | authKW | 1226817 | 9% | 44% | 217 |
2 | HBT | authKW | 634098 | 6% | 33% | 149 |
3 | HETEROJUNCTION BIPOLAR TRANSISTOR HBT | authKW | 403685 | 4% | 37% | 85 |
4 | HETEROJUNCTION BIPOLAR TRANSISTORS HBTS | authKW | 285451 | 2% | 39% | 57 |
5 | OFFSET VOLTAGE | authKW | 229495 | 2% | 49% | 37 |
6 | POTENTIAL SPIKE | authKW | 209088 | 1% | 86% | 19 |
7 | DHBT | authKW | 205567 | 1% | 73% | 22 |
8 | DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS DHBTS | authKW | 159276 | 1% | 83% | 15 |
9 | GRADED BASE | authKW | 140168 | 0% | 100% | 11 |
10 | DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR DHBT | authKW | 135909 | 1% | 67% | 16 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 37790 | 72% | 0% | 1726 |
2 | Physics, Applied | 15507 | 52% | 0% | 1236 |
3 | Physics, Condensed Matter | 2819 | 20% | 0% | 468 |
4 | Nanoscience & Nanotechnology | 237 | 4% | 0% | 104 |
5 | Physics, Multidisciplinary | 141 | 5% | 0% | 127 |
6 | Telecommunications | 41 | 2% | 0% | 42 |
7 | Materials Science, Multidisciplinary | 36 | 7% | 0% | 158 |
8 | Materials Science, Coatings & Films | 30 | 1% | 0% | 31 |
9 | Crystallography | 20 | 1% | 0% | 35 |
10 | Optics | 5 | 2% | 0% | 52 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CSDL | 59289 | 0% | 42% | 11 |
2 | INP IC TEAM | 50970 | 0% | 100% | 4 |
3 | HIGH SPEED DEVICES GRP | 25485 | 0% | 100% | 2 |
4 | MICROWAVE PLICAT | 20375 | 0% | 20% | 8 |
5 | QNERC | 16989 | 0% | 67% | 2 |
6 | RF OEICS | 16989 | 0% | 67% | 2 |
7 | ULTRA HIGH SPEED COMMUN IC TEAM | 16989 | 0% | 67% | 2 |
8 | MICROELECT IXL | 16985 | 0% | 33% | 4 |
9 | NANOTECHNOL RD | 15809 | 0% | 21% | 6 |
10 | MILLIMETER WAVE ELECT GRP | 13266 | 0% | 21% | 5 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID-STATE ELECTRONICS | 115653 | 12% | 3% | 299 |
2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 108773 | 15% | 2% | 360 |
3 | IEEE ELECTRON DEVICE LETTERS | 105451 | 11% | 3% | 273 |
4 | ELECTRONICS LETTERS | 16287 | 9% | 1% | 225 |
5 | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 8206 | 4% | 1% | 91 |
6 | IEEE MICROWAVE AND GUIDED WAVE LETTERS | 6649 | 1% | 3% | 21 |
7 | IEICE TRANSACTIONS ON ELECTRONICS | 5236 | 2% | 1% | 50 |
8 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 3459 | 2% | 1% | 47 |
9 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 3450 | 2% | 1% | 52 |
10 | MICROELECTRONICS RELIABILITY | 2592 | 2% | 1% | 38 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GUO, DF , YEN, CH , TSAI, JH , LOUR, WS , LIU, WC , (2007) INVESTIGATION OF AMPLIFYING AND SWITCHING CHARACTERISTICS IN DOUBLE HETEROSTRUCTURE-EMITTER BIPOLAR TRANSISTORS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 154. ISSUE 4. P. H283 -H288 | 27 | 93% | 0 |
2 | ISHIBASHI, T , (2001) NONEQUILIBRIUM ELECTRON TRANSPORT IN HBTS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 48. ISSUE 11. P. 2595 -2605 | 31 | 91% | 33 |
3 | CHEN, WH , CHEN, TP , LEE, CJ , HUNG, CW , CHU, KY , CHEN, LY , TSAI, TH , LIU, WC , (2008) COMPARATIVE STUDY ON TEMPERATURE-DEPENDENT CHARACTERISTICS OF INP/INGAAS SINGLE- AND DOUBLE-HETEROJUNCTION BIPOLAR TRANSISTORS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 26. ISSUE 2. P. 618 -623 | 24 | 100% | 3 |
4 | CHEN, TP , CHENG, SY , CHEN, WH , HUNG, CW , CHU, KY , CHEN, LY , TSAI, TH , LIU, WC , (2008) CHARACTERISTICS OF AN INP/INGAAS DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR WITH AN INALGAAS/INP COMPOSITE COLLECTOR STRUCTURE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 155. ISSUE 2. P. H136 -H139 | 23 | 96% | 0 |
5 | CHEN, TP , LEE, CJ , CHEN, LY , TSAI, TH , LIU, YJ , HUANG, CC , CHEN, TY , CHENG, SY , LIU, WC , (2009) COMPARATIVE STUDY OF INGAP/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS (HBTS) WITH DIFFERENT BASE SURFACE TREATMENTS.SUPERLATTICES AND MICROSTRUCTURES. VOL. 46. ISSUE 4. P. 715 -722 | 23 | 92% | 1 |
6 | OUDIR, A , MAHDOUANI, M , BOURGUIGA, R , PARDO, F , PELOUARD, JL , (2008) AN ANALYTIC PROCEDURE FOR EXTRACTION OF METALLIC COLLECTOR-UP INP/INGAASP/INGAAS HBT SMALL SIGNAL EQUIVALENT CIRCUIT PARAMETERS.SOLID-STATE ELECTRONICS. VOL. 52. ISSUE 11. P. 1742-1750 | 21 | 100% | 6 |
7 | OUDIR, A , MAHDOUANI, M , MANSOURI, S , BOURGUIGA, R , PARDO, F , PELOUARD, JL , (2010) SMALL-SIGNAL MODELING OF EMITTER-UP HBT USING AN IMPROVED ANALYTICAL APPROACH. APPLICATION TO INGAALAS/GAASSB/INP DHBT WITH STRAINED BASE.SOLID-STATE ELECTRONICS. VOL. 54. ISSUE 1. P. 67-78 | 20 | 100% | 1 |
8 | RUSSO, S , LA SPINA, L , D'ALESSANDRO, V , RINALDI, N , NANVER, LK , (2010) INFLUENCE OF LAYOUT DESIGN AND ON-WAFER HEATSPREADERS ON THE THERMAL BEHAVIOR OF FULLY-ISOLATED BIPOLAR TRANSISTORS: PART I - STATIC ANALYSIS.SOLID-STATE ELECTRONICS. VOL. 54. ISSUE 8. P. 745 -753 | 19 | 100% | 1 |
9 | CHEN, TP , LEE, CJ , LOUR, WS , GUO, DF , TSAI, JH , LIU, WC , (2009) ON THE BREAKDOWN BEHAVIORS OF INP/INGAAS BASED HETEROJUNCTION BIPOLAR TRANSISTORS (HBTS).SOLID-STATE ELECTRONICS. VOL. 53. ISSUE 2. P. 190-194 | 19 | 100% | 6 |
10 | LIN, YS , NG, SB , YU, WF , (2012) CURRENT GAIN AND OFFSET VOLTAGE IN AN INGAP/GAASSB/GAAS DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 59. ISSUE 12. P. 3339-3343 | 25 | 71% | 1 |
Classes with closest relation at Level 1 |