Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
7303 | 1383 | 15.5 | 43% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1699 | 2 | HETEROJUNCTION BIPOLAR TRANSISTORS//SIGEHBT//HBT | 6741 |
7303 | 1 | BIPOLAR TRANSISTORS//IEEE TRANSACTIONS ON ELECTRON DEVICES//POLYSILICON EMITTER | 1383 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | BIPOLAR TRANSISTORS | authKW | 256196 | 5% | 16% | 73 |
2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | journal | 208379 | 27% | 3% | 378 |
3 | POLYSILICON EMITTER | authKW | 151378 | 1% | 57% | 12 |
4 | BASE TRANSIT TIME | authKW | 137976 | 1% | 63% | 10 |
5 | BASE RESISTANCE | authKW | 137830 | 1% | 39% | 16 |
6 | SOLID-STATE ELECTRONICS | journal | 90613 | 15% | 2% | 201 |
7 | BIPOLAR TRANSISTOR MODELING | authKW | 88310 | 0% | 100% | 4 |
8 | SIGEHBT | authKW | 86338 | 2% | 13% | 30 |
9 | HICUM | authKW | 83106 | 1% | 47% | 8 |
10 | VBIC | authKW | 78845 | 0% | 71% | 5 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 27372 | 80% | 0% | 1111 |
2 | Physics, Applied | 10570 | 56% | 0% | 771 |
3 | Physics, Condensed Matter | 1723 | 20% | 0% | 277 |
4 | Computer Science, Hardware & Architecture | 249 | 3% | 0% | 37 |
5 | Materials Science, Coatings & Films | 113 | 3% | 0% | 35 |
6 | Nanoscience & Nanotechnology | 27 | 3% | 0% | 35 |
7 | Computer Science, Interdisciplinary Applications | 18 | 2% | 0% | 23 |
8 | Microscopy | 18 | 1% | 0% | 7 |
9 | Electrochemistry | 12 | 1% | 0% | 20 |
10 | Physics, Multidisciplinary | 9 | 3% | 0% | 42 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | PHYS THIN FILMS MAT ELECT LPCMME | 44155 | 0% | 100% | 2 |
2 | SMMC | 44155 | 0% | 100% | 2 |
3 | A AMA MICROELECT SCI TECHNOL | 40417 | 1% | 13% | 14 |
4 | ELE ON DEVICES INTEGRATED CIRCUITS | 29435 | 0% | 67% | 2 |
5 | CHAIR ELE ON DEVICES INTEGRATED CIRCUITS TECH | 22077 | 0% | 100% | 1 |
6 | COMP AIDED DEVICE DESIGN | 22077 | 0% | 100% | 1 |
7 | DEVICE TECHNOL EKT | 22077 | 0% | 100% | 1 |
8 | DIMESECTM | 22077 | 0% | 100% | 1 |
9 | ELECT COMP MATHS | 22077 | 0% | 100% | 1 |
10 | EQUIPE MICROONDES | 22077 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 208379 | 27% | 3% | 378 |
2 | SOLID-STATE ELECTRONICS | 90613 | 15% | 2% | 201 |
3 | IEEE JOURNAL OF SOLID-STATE CIRCUITS | 61838 | 11% | 2% | 152 |
4 | IEEE ELECTRON DEVICE LETTERS | 12629 | 5% | 1% | 72 |
5 | IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE | 7558 | 0% | 6% | 6 |
6 | INTERNATIONAL JOURNAL OF ELECTRONICS | 6553 | 3% | 1% | 38 |
7 | IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 4728 | 1% | 2% | 14 |
8 | SOVIET MICROELECTRONICS | 1836 | 0% | 2% | 5 |
9 | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1442 | 1% | 0% | 18 |
10 | ELECTRONICS LETTERS | 1333 | 4% | 0% | 50 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | BIPOLAR TRANSISTORS | 256196 | 5% | 16% | 73 | Search BIPOLAR+TRANSISTORS | Search BIPOLAR+TRANSISTORS |
2 | POLYSILICON EMITTER | 151378 | 1% | 57% | 12 | Search POLYSILICON+EMITTER | Search POLYSILICON+EMITTER |
3 | BASE TRANSIT TIME | 137976 | 1% | 63% | 10 | Search BASE+TRANSIT+TIME | Search BASE+TRANSIT+TIME |
4 | BASE RESISTANCE | 137830 | 1% | 39% | 16 | Search BASE+RESISTANCE | Search BASE+RESISTANCE |
5 | BIPOLAR TRANSISTOR MODELING | 88310 | 0% | 100% | 4 | Search BIPOLAR+TRANSISTOR+MODELING | Search BIPOLAR+TRANSISTOR+MODELING |
6 | SIGEHBT | 86338 | 2% | 13% | 30 | Search SIGEHBT | Search SIGEHBT |
7 | HICUM | 83106 | 1% | 47% | 8 | Search HICUM | Search HICUM |
8 | VBIC | 78845 | 0% | 71% | 5 | Search VBIC | Search VBIC |
9 | COMPACT TRANSISTOR MODELING | 70646 | 0% | 80% | 4 | Search COMPACT+TRANSISTOR+MODELING | Search COMPACT+TRANSISTOR+MODELING |
10 | BASE DOPING PROFILE | 66232 | 0% | 100% | 3 | Search BASE+DOPING+PROFILE | Search BASE+DOPING+PROFILE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | POST, IRC , ASHBURN, P , WOLSTENHOLME, GR , (1992) POLYSILICON EMITTERS FOR BIPOLAR-TRANSISTORS - A REVIEW AND REEVALUATION OF THEORY AND EXPERIMENT.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 39. ISSUE 7. P. 1717 -1731 | 45 | 90% | 40 |
2 | D'ALESSANDRO, V , SASSO, G , RINALDI, N , AUFINGER, K , (2016) EXPERIMENTAL DC EXTRACTION OF THE BASE RESISTANCE OF BIPOLAR TRANSISTORS: APPLICATION TO SIGE:C HBTS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 7. P. 2691 -2699 | 19 | 70% | 1 |
3 | RINALDI, N , (1994) SIDEWALL EFFECTS ON MAXIMUM CUTOFF FREQUENCY AND FORWARD TRANSIT-TIME IN DOWNSCALED BIPOLAR-TRANSISTORS.SOLID-STATE ELECTRONICS. VOL. 37. ISSUE 10. P. 1731-1737 | 27 | 96% | 2 |
4 | PAWLAK, A , KRAUSE, J , WITTKOPF, H , SCHROTER, M , (2016) SINGLE TRANSISTOR-BASED METHODS FOR DETERMINING THE BASE RESISTANCE IN SIGE HBTS: REVIEW AND EVALUATION ACROSS DIFFERENT TECHNOLOGIES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 12. P. 4591 -4602 | 15 | 88% | 0 |
5 | WARNOCK, JD , (1995) SILICON BIPOLAR DEVICE STRUCTURES FOR DIGITAL APPLICATIONS - TECHNOLOGY TRENDS AND FUTURE-DIRECTIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 42. ISSUE 3. P. 377 -389 | 33 | 69% | 14 |
6 | KHANDURI, G , PANWAR, B , (2007) AN ITERATION APPROACH FOR BASE DOPING OPTIMIZATION TO MINIMIZE THE BASE TRANSIT TIME IN TRIANGULAR-GE-PROFILE SIGEHBTS.SOLID-STATE ELECTRONICS. VOL. 51. ISSUE 6. P. 961-964 | 17 | 89% | 1 |
7 | ZOUARI, A , BEN ARAB, A , (2008) ANALYTICAL MODEL AND CURRENT GAIN ENHANCEMENT OF POLYSILICON-EMITTER CONTACT BIPOLAR TRANSISTORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 55. ISSUE 11. P. 3214-3220 | 18 | 82% | 0 |
8 | HUSZKA, Z , CHAKRAVORTY, A , (2015) CORRELATED NOISE IN BIPOLAR TRANSISTORS: MODEL IMPLEMENTATION ISSUES.SOLID-STATE ELECTRONICS. VOL. 114. ISSUE . P. 69 -75 | 14 | 88% | 0 |
9 | SCHROTER, M , (2005) HIGH-FREQUENCY CIRCUIT DESIGN ORIENTED COMPACT BIPOLAR TRANSISTOR MODELING WITH HICUM.IEICE TRANSACTIONS ON ELECTRONICS. VOL. E88C. ISSUE 6. P. 1098 -1113 | 22 | 63% | 20 |
10 | HASSAN, MAS , NOMANI, MWK , (2006) BASE-TRANSIT-TIME MODEL CONSIDERING FIELD DEPENDENT MOBILITY FOR BJTS OPERATING AT HIGH-LEVEL INJECTION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 53. ISSUE 10. P. 2532-2539 | 14 | 93% | 6 |
Classes with closest relation at Level 1 |