Class information for:
Level 1: SIGEHBT//A AMA MICROELECT SCI TECHNOL//MIXED MODE STRESS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
14880 744 17.8 57%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
1699 2             HETEROJUNCTION BIPOLAR TRANSISTORS//SIGEHBT//HBT 6741
14880 1                   SIGEHBT//A AMA MICROELECT SCI TECHNOL//MIXED MODE STRESS 744

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SIGEHBT authKW 2042824 14% 47% 107
2 A AMA MICROELECT SCI TECHNOL address 497044 5% 34% 36
3 MIXED MODE STRESS authKW 451449 1% 100% 11
4 SILICON GERMANIUM SIGE authKW 286285 4% 23% 30
5 INVERSE MODE OPERATION authKW 164163 1% 100% 4
6 SILICON GERMANIUM HBT authKW 164163 1% 100% 4
7 SIGE authKW 151811 9% 5% 68
8 SIGE HETEROJUNCTION BIPOLAR TRANSISTORS HBTS authKW 147742 1% 60% 6
9 HETEROJUNCTION BIPOLAR TRANSISTORS HBTS authKW 136954 3% 15% 22
10 COMMON BASE CB authKW 131329 1% 80% 4

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 13293 76% 0% 569
2 Nuclear Science & Technology 3853 22% 0% 160
3 Physics, Applied 3683 46% 0% 339
4 Physics, Condensed Matter 777 19% 0% 138
5 Nanoscience & Nanotechnology 324 8% 0% 59
6 Physics, Multidisciplinary 65 6% 0% 45
7 Instruments & Instrumentation 64 4% 0% 28
8 Telecommunications 44 3% 0% 20
9 Physics, Nuclear 38 3% 0% 22
10 Materials Science, Coatings & Films 34 2% 0% 15

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 A AMA MICROELECT SCI TECHNOL 497044 5% 34% 36
2 WIDE BAND G SEMICOND MAT DEVICES CHIN 72957 1% 44% 4
3 TSINGHUA INFORMAT TECHNOL 61558 0% 50% 3
4 CDMA FEM TEAM 41041 0% 100% 1
5 CNETBAGNEUX III IV MICROELE 41041 0% 100% 1
6 CRDM DEVICE TECHNOL 41041 0% 100% 1
7 DIETI ELECT ENG INFORMAT TECH 41041 0% 100% 1
8 ELECT ENGN INFORMAT TECHNOL PHYS 41041 0% 100% 1
9 ELECT MICROOPTOELECT MONPELLIER 41041 0% 100% 1
10 GREYC ISMRA 41041 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE 39258 17% 1% 126
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 29220 14% 1% 104
3 SOLID-STATE ELECTRONICS 23406 10% 1% 75
4 MICROELECTRONICS RELIABILITY 12498 6% 1% 46
5 IEEE ELECTRON DEVICE LETTERS 7996 6% 0% 42
6 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 5510 2% 1% 12
7 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 2035 0% 2% 3
8 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 1463 2% 0% 17
9 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 803 2% 0% 16
10 IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS 714 1% 0% 4

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SIGEHBT 2042824 14% 47% 107 Search SIGEHBT Search SIGEHBT
2 MIXED MODE STRESS 451449 1% 100% 11 Search MIXED+MODE+STRESS Search MIXED+MODE+STRESS
3 SILICON GERMANIUM SIGE 286285 4% 23% 30 Search SILICON+GERMANIUM+SIGE Search SILICON+GERMANIUM+SIGE
4 INVERSE MODE OPERATION 164163 1% 100% 4 Search INVERSE+MODE+OPERATION Search INVERSE+MODE+OPERATION
5 SILICON GERMANIUM HBT 164163 1% 100% 4 Search SILICON+GERMANIUM+HBT Search SILICON+GERMANIUM+HBT
6 SIGE 151811 9% 5% 68 Search SIGE Search SIGE
7 SIGE HETEROJUNCTION BIPOLAR TRANSISTORS HBTS 147742 1% 60% 6 Search SIGE+HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS Search SIGE+HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS
8 HETEROJUNCTION BIPOLAR TRANSISTORS HBTS 136954 3% 15% 22 Search HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS Search HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS
9 COMMON BASE CB 131329 1% 80% 4 Search COMMON+BASE+CB Search COMMON+BASE+CB
10 PROTON TOLERANCE 131329 1% 80% 4 Search PROTON+TOLERANCE Search PROTON+TOLERANCE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 CRESSLER, JD , (2013) RADIATION EFFECTS IN SIGE TECHNOLOGY.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 60. ISSUE 3. P. 1992 -2014 96 86% 14
2 CRESSLER, JD , (2004) EMERGING SIGE HBT RELIABILITY ISSUES FOR MIXED-SIGNAL CIRCUIT APPLICATIONS.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 4. ISSUE 2. P. 222 -236 36 86% 26
3 CRESSLER, JD , (2010) SILICON-GERMANIUM AS AN ENABLING TECHNOLOGY FOR EXTREME ENVIRONMENT ELECTRONICS.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 10. ISSUE 4. P. 437 -448 28 90% 19
4 UL HOQUE, MM , CELIK-BUTLER, Z , MARTIN, S , KNORR, C , BULUCEA, C , (2006) DEPENDENCE OF LOW FREQUENCY NOISE IN SIGE HETEROJUNCTION BIPOLAR TRANSISTORS ON THE DIMENSIONAL AND STRUCTURAL FEATURES OF EXTRINSIC REGIONS.SOLID-STATE ELECTRONICS. VOL. 50. ISSUE 7-8. P. 1430 -1439 33 83% 1
5 CRESSLER, JD , (2005) ON THE POTENTIAL OF SIGEHBTS FOR EXTREME ENVIRONMENT ELECTRONICS.PROCEEDINGS OF THE IEEE. VOL. 93. ISSUE 9. P. 1559 -1582 35 67% 115
6 DEEN, MJ , SIMOEN, E , (2002) LOW-FREQUENCY NOISE IN POLYSILICON-EMITTER BIPOLAR TRANSISTORS.IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS. VOL. 149. ISSUE 1. P. 40 -50 34 87% 15
7 PASCAL, F , CHAY, C , DEEN, MJ , JARRIX, SG , DELSENY, C , PENARIER, A , (2004) COMPARISON OF LOW-FREQUENCY NOISE IN III-V AND SI/SIGE HBTS.IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS. VOL. 151. ISSUE 2. P. 138 -147 29 94% 8
8 WEAVER, BD , (2005) A REVIEW OF RADIATION EFFECTS IN HETEROJUNCTION BIPOLAR TRANSISTORS.RADIATION EFFECTS AND DEFECTS IN SOLIDS. VOL. 160. ISSUE 9. P. 425-430 29 91% 0
9 VANDAMME, LKJ , TREFAN, G , (2001) A REVIEW OF 1/F NOISE IN TERMS OF MOBILITY FLUCTUATIONS AND WHITE NOISE IN MODERN SUBMICRON BIPOLAR TRANSISTORS - BJTS AND HBTS.FLUCTUATION AND NOISE LETTERS. VOL. 1. ISSUE 4. P. R175-R199 43 64% 6
10 DEEN, MJ , PASCAL, F , (2004) REVIEW OF LOW-FREQUENCY NOISE BEHAVIOUR OF POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS.IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS. VOL. 151. ISSUE 2. P. 125 -137 27 90% 16

Classes with closest relation at Level 1


Rank Class id link
1 7303 BIPOLAR TRANSISTORS//IEEE TRANSACTIONS ON ELECTRON DEVICES//POLYSILICON EMITTER
2 1985 HETEROJUNCTION BIPOLAR TRANSISTORS//HBT//HETEROJUNCTION BIPOLAR TRANSISTOR HBT
3 2527 LOW FREQUENCY NOISE//1 F NOISE//FLICKER NOISE
4 2169 IEEE TRANSACTIONS ON NUCLEAR SCIENCE//TOTAL IONIZING DOSE//OXIDE TRAPPED CHARGE
5 30345 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL
6 12205 DISPLACEMENT DAMAGE//NONIONIZING ENERGY LOSS//DISPLACEMENT DAMAGE DOSE
7 738 SOFT ERROR//SINGLE EVENT UPSET//SINGLE EVENT TRANSIENT
8 12282 NOISE PARAMETERS//CHANNEL THERMAL NOISE//INDUCED GATE NOISE
9 5738 STRAINED SI1 XGEX SI QUANTUM WELLS//SEGREGANT ASSISTED GROWTH//SI BASED NANOSTRUCTURES
10 7126 ATOMIC LAYER DOPING//SELECTIVE EPITAXIAL GROWTH//SI EPITAXIAL GROWTH

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