Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
2724 | 2164 | 30.1 | 69% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
746 | 2 | BETA FESI2//SILICIDES//SERIES RESISTANCE | 12475 |
2724 | 1 | SERIES RESISTANCE//IDEALITY FACTOR//SCHOTTKY DIODE | 2164 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SERIES RESISTANCE | authKW | 1047587 | 9% | 38% | 195 |
2 | IDEALITY FACTOR | authKW | 774758 | 6% | 45% | 122 |
3 | SCHOTTKY DIODE | authKW | 675174 | 11% | 20% | 241 |
4 | BARRIER INHOMOGENEITY | authKW | 636637 | 3% | 79% | 57 |
5 | BARRIER HEIGHT | authKW | 617943 | 6% | 32% | 139 |
6 | SCHOTTKY BARRIER DIODE | authKW | 327013 | 4% | 28% | 82 |
7 | INTERFACE STATE DENSITY | authKW | 289279 | 3% | 32% | 65 |
8 | VOCAT MED SCI | address | 284442 | 1% | 81% | 25 |
9 | INTERFACE STATES | authKW | 271014 | 6% | 15% | 127 |
10 | OPTICIANRY | address | 240748 | 1% | 74% | 23 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 13890 | 51% | 0% | 1112 |
2 | Physics, Condensed Matter | 12887 | 41% | 0% | 884 |
3 | Materials Science, Multidisciplinary | 6652 | 40% | 0% | 859 |
4 | Engineering, Electrical & Electronic | 3897 | 26% | 0% | 570 |
5 | Materials Science, Coatings & Films | 2091 | 7% | 0% | 162 |
6 | Nanoscience & Nanotechnology | 1542 | 10% | 0% | 213 |
7 | Optics | 842 | 10% | 0% | 206 |
8 | Polymer Science | 731 | 8% | 0% | 174 |
9 | Metallurgy & Metallurgical Engineering | 301 | 5% | 0% | 106 |
10 | Chemistry, Physical | 243 | 10% | 0% | 222 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | VOCAT MED SCI | 284442 | 1% | 81% | 25 |
2 | OPTICIANRY | 240748 | 1% | 74% | 23 |
3 | SCI ARTS | 108245 | 10% | 4% | 219 |
4 | NUCL ELECT RUMENTAT | 98762 | 0% | 100% | 7 |
5 | MICROELECT PL | 91402 | 1% | 36% | 18 |
6 | MADEN HIGHER VOCAT | 46081 | 0% | 47% | 7 |
7 | ARTS SCI | 45674 | 13% | 1% | 291 |
8 | GRP PESQUISA CIENCIA MAT | 42326 | 0% | 100% | 3 |
9 | YSR ENGN | 39187 | 0% | 56% | 5 |
10 | SEMICOND CHEM ENGN | 29529 | 2% | 5% | 43 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 28030 | 4% | 2% | 81 |
2 | SOLID-STATE ELECTRONICS | 15664 | 5% | 1% | 105 |
3 | MICROELECTRONIC ENGINEERING | 15211 | 5% | 1% | 105 |
4 | SYNTHETIC METALS | 11827 | 6% | 1% | 123 |
5 | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 7472 | 2% | 1% | 37 |
6 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 7393 | 3% | 1% | 65 |
7 | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 5565 | 1% | 2% | 20 |
8 | CURRENT APPLIED PHYSICS | 4944 | 2% | 1% | 39 |
9 | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 3989 | 2% | 1% | 39 |
10 | PHYSICA B-CONDENSED MATTER | 3494 | 4% | 0% | 89 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SERIES RESISTANCE | 1047587 | 9% | 38% | 195 | Search SERIES+RESISTANCE | Search SERIES+RESISTANCE |
2 | IDEALITY FACTOR | 774758 | 6% | 45% | 122 | Search IDEALITY+FACTOR | Search IDEALITY+FACTOR |
3 | SCHOTTKY DIODE | 675174 | 11% | 20% | 241 | Search SCHOTTKY+DIODE | Search SCHOTTKY+DIODE |
4 | BARRIER INHOMOGENEITY | 636637 | 3% | 79% | 57 | Search BARRIER+INHOMOGENEITY | Search BARRIER+INHOMOGENEITY |
5 | BARRIER HEIGHT | 617943 | 6% | 32% | 139 | Search BARRIER+HEIGHT | Search BARRIER+HEIGHT |
6 | SCHOTTKY BARRIER DIODE | 327013 | 4% | 28% | 82 | Search SCHOTTKY+BARRIER+DIODE | Search SCHOTTKY+BARRIER+DIODE |
7 | INTERFACE STATE DENSITY | 289279 | 3% | 32% | 65 | Search INTERFACE+STATE+DENSITY | Search INTERFACE+STATE+DENSITY |
8 | INTERFACE STATES | 271014 | 6% | 15% | 127 | Search INTERFACE+STATES | Search INTERFACE+STATES |
9 | SCHOTTKY BARRIER HEIGHT | 217065 | 3% | 23% | 66 | Search SCHOTTKY+BARRIER+HEIGHT | Search SCHOTTKY+BARRIER+HEIGHT |
10 | BARRIER HEIGHT INHOMOGENEITY | 212460 | 1% | 94% | 16 | Search BARRIER+HEIGHT+INHOMOGENEITY | Search BARRIER+HEIGHT+INHOMOGENEITY |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | REDDY, MSP , KANG, HS , LEE, JH , REDDY, VR , JANG, JS , (2014) ELECTRICAL PROPERTIES AND THE ROLE OF INHOMOGENEITIES AT THE POLYVINYL ALCOHOL/N-INP SCHOTTKY BARRIER INTERFACE.JOURNAL OF APPLIED POLYMER SCIENCE. VOL. 131. ISSUE 2. P. - | 49 | 92% | 2 |
2 | TASCIOGLU, I , AYDEMIR, U , ALTINDAL, S , (2010) THE EXPLANATION OF BARRIER HEIGHT INHOMOGENEITIES IN AU/N-SI SCHOTTKY BARRIER DIODES WITH ORGANIC THIN INTERFACIAL LAYER.JOURNAL OF APPLIED PHYSICS. VOL. 108. ISSUE 6. P. - | 45 | 92% | 33 |
3 | KORUCU, D , DUMAN, S , (2013) CURRENT-VOLTAGE-TEMPERATURE CHARACTERISTICS OF AU/P-INP SCHOTTKY BARRIER DIODE.THIN SOLID FILMS. VOL. 531. ISSUE . P. 436 -441 | 42 | 89% | 10 |
4 | GULLU, O , TURUT, A , (2009) ELECTRICAL ANALYSIS OF ORGANIC INTERLAYER BASED METAL/INTERLAYER/SEMICONDUCTOR DIODE STRUCTURES.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 10. P. - | 41 | 95% | 26 |
5 | SHARMA, M , TRIPATHI, SK , (2012) STUDY OF BARRIER INHOMOGENEITIES IN I-V-T AND C-V-T CHARACTERISTICS OF AL/AL2O3/PVA:N-ZNSE METAL-OXIDE-SEMICONDUCTOR DIODE.JOURNAL OF APPLIED PHYSICS. VOL. 112. ISSUE 2. P. - | 47 | 78% | 11 |
6 | OZERLI, H , KARTERI, I , KARATAS, S , ALTINDAL, S , (2014) THE CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS AT HIGH TEMPERATURES OF AU SCHOTTKY CONTACT TO N-TYPE GAAS.MATERIALS RESEARCH BULLETIN. VOL. 53. ISSUE . P. 211-217 | 40 | 83% | 9 |
7 | EJDERHA, K , YILDIRIM, N , TURUT, A , (2014) TEMPERATURE-DEPENDENT CURRENT-VOLTAGE CHARACTERISTICS IN THERMALLY ANNEALED FERROMAGNETIC CO/N-GAN SCHOTTKY CONTACTS.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. VOL. 68. ISSUE 2. P. - | 44 | 81% | 0 |
8 | GULLU, O , TURUT, A , (2010) ELECTRICAL ANALYSIS OF ORGANIC DYE-BASED MIS SCHOTTKY CONTACTS.MICROELECTRONIC ENGINEERING. VOL. 87. ISSUE 12. P. 2482-2487 | 40 | 89% | 27 |
9 | REDDY, VR , (2015) ELECTRICAL AND INTERFACIAL PROPERTIES OF AU/N-INP SCHOTTKY CONTACTS WITH NICKEL PHTHALOCYANINE (NIPC) INTERLAYER.INDIAN JOURNAL OF PHYSICS. VOL. 89. ISSUE 5. P. 463 -469 | 36 | 95% | 0 |
10 | GULLU, O , AYDOGAN, S , TURUT, A , (2012) HIGH BARRIER SCHOTTKY DIODE WITH ORGANIC INTERLAYER.SOLID STATE COMMUNICATIONS. VOL. 152. ISSUE 5. P. 381-385 | 36 | 92% | 21 |
Classes with closest relation at Level 1 |