Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
16138 | 671 | 13.4 | 38% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
270 | 3 | IEEE TRANSACTIONS ON PLASMA SCIENCE//DIELECTRIC BARRIER DISCHARGE//PLASMA CHEMISTRY AND PLASMA PROCESSING | 43994 |
2975 | 2 | PULSE TRANSFORMER//MARX GENERATOR//PULSED POWER | 2627 |
16138 | 1 | REVERSELY SWITCHED DYNISTOR RSD//POWER SEMICONDUCTOR DIODE SWITCHES//POWER SEMICOND DEVICES | 671 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | REVERSELY SWITCHED DYNISTOR RSD | authKW | 278722 | 1% | 88% | 7 |
2 | POWER SEMICONDUCTOR DIODE SWITCHES | authKW | 189606 | 1% | 83% | 5 |
3 | POWER SEMICOND DEVICES | address | 182024 | 1% | 100% | 4 |
4 | CHAIR ELECT DR | address | 136518 | 0% | 100% | 3 |
5 | DRIFT STEP RECOVERY DIODE DSRD | authKW | 136518 | 0% | 100% | 3 |
6 | DI DT | authKW | 94798 | 1% | 42% | 5 |
7 | CHARGE STORAGE DIODES | authKW | 91012 | 0% | 100% | 2 |
8 | DELAYED BREAKDOWN DIODE | authKW | 91012 | 0% | 100% | 2 |
9 | DRIFT STEP RECOVERY DIODE | authKW | 91012 | 0% | 100% | 2 |
10 | GUNN DOMAINS | authKW | 91012 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 2616 | 41% | 0% | 274 |
2 | Instruments & Instrumentation | 2283 | 19% | 0% | 126 |
3 | Engineering, Electrical & Electronic | 2130 | 34% | 0% | 228 |
4 | Engineering, General | 1504 | 12% | 0% | 79 |
5 | Physics, Condensed Matter | 1474 | 26% | 0% | 173 |
6 | Physics, Fluids & Plasmas | 334 | 6% | 0% | 40 |
7 | Materials Science, Characterization, Testing | 34 | 1% | 0% | 7 |
8 | Telecommunications | 34 | 3% | 0% | 17 |
9 | Materials Science, Multidisciplinary | 25 | 8% | 0% | 54 |
10 | Robotics | 11 | 0% | 0% | 3 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | POWER SEMICOND DEVICES | 182024 | 1% | 100% | 4 |
2 | CHAIR ELECT DR | 136518 | 0% | 100% | 3 |
3 | PHYS TECH HIGH | 91012 | 0% | 100% | 2 |
4 | STATE INTENSE PULSED RADIAT FIELD SIMULAT | 91012 | 0% | 100% | 2 |
5 | AMSRL SE RL | 72805 | 1% | 40% | 4 |
6 | CHAIR ELECT DRIVES | 60673 | 0% | 67% | 2 |
7 | IOFFE | 45654 | 2% | 6% | 16 |
8 | AFRLDE | 45506 | 0% | 100% | 1 |
9 | AMSRDARLSEDP | 45506 | 0% | 100% | 1 |
10 | BERKELEY ASSOCIATES | 45506 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 42393 | 9% | 2% | 61 |
2 | SEMICONDUCTORS | 17536 | 8% | 1% | 51 |
3 | SOLID-STATE ELECTRONICS | 13432 | 8% | 1% | 54 |
4 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 7307 | 4% | 1% | 30 |
5 | IEEE TRANSACTIONS ON PLASMA SCIENCE | 5713 | 5% | 0% | 35 |
6 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 5108 | 4% | 0% | 30 |
7 | ZHURNAL TEKHNICHESKOI FIZIKI | 3595 | 3% | 0% | 22 |
8 | REVIEW OF SCIENTIFIC INSTRUMENTS | 3424 | 7% | 0% | 48 |
9 | TECHNICAL PHYSICS LETTERS | 3074 | 3% | 0% | 21 |
10 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2655 | 4% | 0% | 30 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | IVANOV, PA , LEVINSHTEIN, ME , MNATSAKANOV, TT , PALMOUR, JW , AGARWAL, AK , (2005) POWER BIPOLAR DEVICES BASED ON SILICON CARBIDE.SEMICONDUCTORS. VOL. 39. ISSUE 8. P. 861-877 | 33 | 83% | 25 |
2 | KESAR, AS , SHARABANI, Y , SHAFIR, I , ZORAN, S , SHER, A , (2016) CHARACTERIZATION OF A DRIFT-STEP-RECOVERY DIODE BASED ON ALL EPI-SI GROWTH.IEEE TRANSACTIONS ON PLASMA SCIENCE. VOL. 44. ISSUE 10. P. 2424 -2428 | 16 | 94% | 0 |
3 | BRYLEVSKIY, VI , SMIRNOVA, IA , ROZHKOV, AV , BRUNKOV, PN , RODIN, PB , GREKHOV, IV , (2016) PICOSECOND-RANGE AVALANCHE SWITCHING OF HIGH-VOLTAGE DIODES: SI VERSUS GAAS STRUCTURES.IEEE TRANSACTIONS ON PLASMA SCIENCE. VOL. 44. ISSUE 10. P. 1941 -1946 | 15 | 100% | 0 |
4 | MERENSKY, LM , KARDO-SYSOEV, AF , SHMILOVITZ, D , KESAR, AS , (2014) THE DRIVING CONDITIONS FOR OBTAINING SUBNANOSECOND HIGH-VOLTAGE PULSES FROM A SILICON-AVALANCHE-SHAPER DIODE.IEEE TRANSACTIONS ON PLASMA SCIENCE. VOL. 42. ISSUE 12. P. 4015 -4019 | 17 | 89% | 3 |
5 | YURKOV, SN , MNATSAKANOV, TT , LEVINSHTEIN, ME , CHENG, L , PALMOUR, JW , (2014) SPECIFIC FEATURES OF THE SWITCH-ON GATE CURRENT AND DIFFERENT SWITCH-ON MODES IN SILICON CARBIDE THYRISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 29. ISSUE 12. P. - | 16 | 94% | 0 |
6 | VAINSHTEIN, SN , DUAN, GY , FILIMONOV, AV , KOSTAMOVAARA, JT , (2016) SWITCHING MECHANISMS TRIGGERED BY A COLLECTOR VOLTAGE RAMP IN AVALANCHE TRANSISTORS WITH SHORT-CONNECTED BASE AND EMITTER.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 8. P. 3044 -3048 | 14 | 100% | 0 |
7 | MNATSAKANOV, TT , LEVINSHTEIN, ME , IVANOV, PA , PALMOUR, JW , TANDOEV, AG , YURKOV, SN , (2003) PARAMETERS OF ELECTRON-HOLE SCATTERING IN SILICON CARBIDE.JOURNAL OF APPLIED PHYSICS. VOL. 93. ISSUE 2. P. 1095 -1098 | 21 | 88% | 12 |
8 | MNATSAKANOV, TT , LEVINSHTEIN, ME , TANDOEV, AG , YURKOV, SN , (2011) MODULATION WAVES OF CHARGE CARRIERS IN N- AND P-TYPE SEMICONDUCTOR LAYERS.SEMICONDUCTORS. VOL. 45. ISSUE 2. P. 192 -197 | 14 | 100% | 0 |
9 | MNATSAKANOV, TT , YURKOV, SN , LEVINSHTEIN, ME , CHENG, L , PALMOUR, JW , (2014) SPECIFIC FEATURES OF SWITCH-ON PROCESSES IN HIGH-VOLTAGE (18 KV CLASS) OPTICALLY TRIGGERED 4H-SIC THYRISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 29. ISSUE 5. P. - | 13 | 100% | 0 |
10 | MNATSAKANOV, TT , YURKOV, SN , LEVINSHTEIN, ME , TANDOEV, AG , AGARWAL, AK , PALMOUR, JW , (2003) THE CRITICAL CHARGE CONCEPT FOR 4H-SIC-BASED THYRISTORS.SOLID-STATE ELECTRONICS. VOL. 47. ISSUE 9. P. 1581-1587 | 17 | 100% | 6 |
Classes with closest relation at Level 1 |