Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
28210 | 212 | 27.1 | 74% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
589 | 3 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 15224 |
664 | 2 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 13339 |
28210 | 1 | NEGATIVE CAPACITANCE//CHAIR NANOELECT MAT//NAM GGMBH | 212 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | NEGATIVE CAPACITANCE | authKW | 1470307 | 17% | 29% | 35 |
2 | CHAIR NANOELECT MAT | address | 1138207 | 8% | 44% | 18 |
3 | NAM GGMBH | address | 838017 | 4% | 73% | 8 |
4 | FERROELECTRIC HFO2 | authKW | 576140 | 2% | 100% | 4 |
5 | NEGATIVE CAPACITANCE FET NCFET | authKW | 576140 | 2% | 100% | 4 |
6 | SUB 60 MV DECADE | authKW | 432105 | 1% | 100% | 3 |
7 | TWO WELL ENERGY LANDSCAPE | authKW | 432105 | 1% | 100% | 3 |
8 | FIELD EFFECT ACTION | authKW | 288070 | 1% | 100% | 2 |
9 | PARTIALLY DEPLETED SILICON ON INSULATOR DEVICE | authKW | 288070 | 1% | 100% | 2 |
10 | ZRHFO | authKW | 288070 | 1% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 2917 | 74% | 0% | 156 |
2 | Nanoscience & Nanotechnology | 836 | 22% | 0% | 46 |
3 | Engineering, Electrical & Electronic | 384 | 26% | 0% | 56 |
4 | Materials Science, Multidisciplinary | 376 | 31% | 0% | 66 |
5 | Physics, Condensed Matter | 317 | 22% | 0% | 46 |
6 | Chemistry, Physical | 36 | 12% | 0% | 25 |
7 | Chemistry, Multidisciplinary | 36 | 11% | 0% | 24 |
8 | Materials Science, Ceramics | 13 | 2% | 0% | 4 |
9 | Acoustics | 2 | 1% | 0% | 2 |
10 | Materials Science, Characterization, Testing | 1 | 0% | 0% | 1 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CHAIR NANOELECT MAT | 1138207 | 8% | 44% | 18 |
2 | NAM GGMBH | 838017 | 4% | 73% | 8 |
3 | BEST GRP | 144035 | 0% | 100% | 1 |
4 | BUSINESS UNIT NANOELECT TECHNOL CNT | 144035 | 0% | 100% | 1 |
5 | FUER HALBLEITER MIKROSYST TECH | 144035 | 0% | 100% | 1 |
6 | MIDRORI KU | 144035 | 0% | 100% | 1 |
7 | NAM GMBH | 144035 | 0% | 100% | 1 |
8 | NSF COMPUTAT NANOTECHNOL | 144035 | 0% | 100% | 1 |
9 | SEMICOND MICROSYT | 144035 | 0% | 100% | 1 |
10 | ASIC RD | 121286 | 2% | 21% | 4 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 4169 | 10% | 0% | 21 |
2 | APPLIED PHYSICS LETTERS | 2763 | 22% | 0% | 46 |
3 | IEEE ELECTRON DEVICE LETTERS | 2291 | 6% | 0% | 12 |
4 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 1769 | 2% | 0% | 4 |
5 | ADVANCED ELECTRONIC MATERIALS | 1532 | 1% | 1% | 2 |
6 | APPLIED PHYSICS REVIEWS | 1514 | 0% | 1% | 1 |
7 | NANO LETTERS | 1418 | 5% | 0% | 11 |
8 | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 959 | 1% | 0% | 3 |
9 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 794 | 0% | 1% | 1 |
10 | SOLID-STATE ELECTRONICS | 517 | 3% | 0% | 6 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | NEGATIVE CAPACITANCE | 1470307 | 17% | 29% | 35 | Search NEGATIVE+CAPACITANCE | Search NEGATIVE+CAPACITANCE |
2 | FERROELECTRIC HFO2 | 576140 | 2% | 100% | 4 | Search FERROELECTRIC+HFO2 | Search FERROELECTRIC+HFO2 |
3 | NEGATIVE CAPACITANCE FET NCFET | 576140 | 2% | 100% | 4 | Search NEGATIVE+CAPACITANCE+FET+NCFET | Search NEGATIVE+CAPACITANCE+FET+NCFET |
4 | SUB 60 MV DECADE | 432105 | 1% | 100% | 3 | Search SUB+60+MV+DECADE | Search SUB+60+MV+DECADE |
5 | TWO WELL ENERGY LANDSCAPE | 432105 | 1% | 100% | 3 | Search TWO+WELL+ENERGY+LANDSCAPE | Search TWO+WELL+ENERGY+LANDSCAPE |
6 | FIELD EFFECT ACTION | 288070 | 1% | 100% | 2 | Search FIELD+EFFECT+ACTION | Search FIELD+EFFECT+ACTION |
7 | PARTIALLY DEPLETED SILICON ON INSULATOR DEVICE | 288070 | 1% | 100% | 2 | Search PARTIALLY+DEPLETED+SILICON+ON+INSULATOR+DEVICE | Search PARTIALLY+DEPLETED+SILICON+ON+INSULATOR+DEVICE |
8 | ZRHFO | 288070 | 1% | 100% | 2 | Search ZRHFO | Search ZRHFO |
9 | NEGATIVE CAPACITANCE NC | 209500 | 2% | 36% | 4 | Search NEGATIVE+CAPACITANCE+NC | Search NEGATIVE+CAPACITANCE+NC |
10 | 28 NM TECHNOLOGY NODE | 144035 | 0% | 100% | 1 | Search 28+NM+TECHNOLOGY+NODE | Search 28+NM+TECHNOLOGY+NODE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | PARK, MH , KIM, HJ , KIM, YJ , LEE, YH , MOON, T , DO KIM, K , HYUN, SD , FENGLER, F , SCHROEDER, U , HWANG, CS , (2016) EFFECT OF ZR CONTENT ON THE WAKE-UP EFFECT IN HF1-XZRXO2 FILMS.ACS APPLIED MATERIALS & INTERFACES. VOL. 8. ISSUE 24. P. 15466 -15475 | 35 | 97% | 1 |
2 | HOFFMANN, M , SCHROEDER, U , SCHENK, T , SHIMIZU, T , FUNAKUBO, H , SAKATA, O , POHL, D , DRESCHER, M , ADELMANN, C , MATERLIK, R , ET AL (2015) STABILIZING THE FERROELECTRIC PHASE IN DOPED HAFNIUM OXIDE.JOURNAL OF APPLIED PHYSICS. VOL. 118. ISSUE 7. P. - | 25 | 68% | 15 |
3 | STARSCHICH, S , BOETTGER, U , (2017) AN EXTENSIVE STUDY OF THE INFLUENCE OF DOPANTS ON THE FERROELECTRIC PROPERTIES OF HFO2.JOURNAL OF MATERIALS CHEMISTRY C. VOL. 5. ISSUE 2. P. 333 -338 | 27 | 75% | 0 |
4 | KIM, KD , PARK, MH , KIM, HJ , KIM, YJ , MOON, T , LEE, YH , HYUN, SD , GWON, T , HWANG, CS , (2016) FERROELECTRICITY IN UNDOPED-HFO2 THIN FILMS INDUCED BY DEPOSITION TEMPERATURE CONTROL DURING ATOMIC LAYER DEPOSITION.JOURNAL OF MATERIALS CHEMISTRY C. VOL. 4. ISSUE 28. P. 6864 -6872 | 28 | 68% | 1 |
5 | SHIRAISHI, T , KATAYAMA, K , YOKOUCHI, T , SHIMIZU, T , OIKAWA, T , SAKATA, O , UCHIDA, H , IMAI, Y , KIGUCHI, T , KONNO, TJ , ET AL (2016) IMPACT OF MECHANICAL STRESS ON FERROELECTRICITY IN (HF0.5ZR0.5)O-2 THIN FILMS.APPLIED PHYSICS LETTERS. VOL. 108. ISSUE 26. P. - | 26 | 74% | 0 |
6 | FAN, Z , DENG, JY , WANG, JX , LIU, ZY , YANG, P , XIAO, JX , YAN, XB , DONG, ZL , WANG, J , CHEN, JS , (2016) FERROELECTRICITY EMERGING IN STRAINED (111)-TEXTURED ZRO2 THIN FILMS.APPLIED PHYSICS LETTERS. VOL. 108. ISSUE 1. P. - | 24 | 77% | 0 |
7 | GRIMLEY, ED , SCHENK, T , SANG, XH , PESIC, M , SCHROEDER, U , MIKOLAJICK, T , LEBEAU, JM , (2016) STRUCTURAL CHANGES UNDERLYING FIELD-CYCLING PHENOMENA IN FERROELECTRIC HFO2 THIN FILMS.ADVANCED ELECTRONIC MATERIALS. VOL. 2. ISSUE 9. P. - | 28 | 61% | 1 |
8 | PARK, MH , LEE, YH , KIM, HJ , KIM, YJ , MOON, T , DO KIM, K , MULLER, J , KERSCH, A , SCHROEDER, U , MIKOLAJICK, T , ET AL (2015) FERROELECTRICITY AND ANTIFERROELECTRICITY OF DOPED THIN HFO2-BASED FILMS.ADVANCED MATERIALS. VOL. 27. ISSUE 11. P. 1811 -1831 | 35 | 38% | 26 |
9 | LOMENZO, PD , TAKMEEL, Q , ZHOU, CZ , FANCHER, CM , LAMBERS, E , RUDAWSKI, NG , JONES, JL , MOGHADDAM, S , NISHIDA, T , (2015) TAN INTERFACE PROPERTIES AND ELECTRIC FIELD CYCLING EFFECTS ON FERROELECTRIC SI-DOPED HFO2 THIN FILMS.JOURNAL OF APPLIED PHYSICS. VOL. 117. ISSUE 13. P. - | 23 | 62% | 14 |
10 | PAHWA, G , DUTTA, T , AGARWAL, A , KHANDELWAL, S , SALAHUDDIN, S , HU, CM , CHAUHAN, YS , (2016) ANALYSIS AND COMPACT MODELING OF NEGATIVE CAPACITANCE TRANSISTOR WITH HIGH ON-CURRENT AND NEGATIVE OUTPUT DIFFERENTIAL RESISTANCE-PART I: MODEL DESCRIPTION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 12. P. 4981 -4985 | 19 | 90% | 0 |
Classes with closest relation at Level 1 |