Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
9796 | 1119 | 22.3 | 63% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
589 | 3 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 15224 |
664 | 2 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 13339 |
9796 | 1 | TANTALUM OXIDE//TA2O5//TANTALUM PENTOXIDE | 1119 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | TANTALUM OXIDE | authKW | 749193 | 8% | 31% | 88 |
2 | TA2O5 | authKW | 515420 | 6% | 27% | 69 |
3 | TANTALUM PENTOXIDE | authKW | 501342 | 4% | 44% | 42 |
4 | TANTALUM PENTOXIDE TA2O5 | authKW | 235829 | 1% | 79% | 11 |
5 | TANTALUM OXIDE FILMS | authKW | 167128 | 1% | 88% | 7 |
6 | TA2O5 THIN FILMS | authKW | 133700 | 1% | 70% | 7 |
7 | HIGH K STACK | authKW | 122786 | 1% | 75% | 6 |
8 | TANTALUM ETHOXIDE | authKW | 122786 | 1% | 75% | 6 |
9 | TA2O51 XTIO2X | authKW | 109146 | 0% | 100% | 4 |
10 | THIN TA2O5 FILM | authKW | 109146 | 0% | 100% | 4 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 9078 | 21% | 0% | 232 |
2 | Physics, Applied | 7813 | 53% | 0% | 598 |
3 | Materials Science, Multidisciplinary | 1664 | 29% | 0% | 323 |
4 | Physics, Condensed Matter | 1644 | 22% | 0% | 241 |
5 | Engineering, Electrical & Electronic | 788 | 18% | 0% | 197 |
6 | Electrochemistry | 775 | 8% | 0% | 85 |
7 | Nanoscience & Nanotechnology | 516 | 8% | 0% | 91 |
8 | Materials Science, Ceramics | 349 | 4% | 0% | 43 |
9 | Chemistry, Physical | 223 | 12% | 0% | 139 |
10 | Optics | 133 | 6% | 0% | 67 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SCI TECHNOL SYNTH GROWTH ANAL ELECT MAT | 40927 | 0% | 50% | 3 |
2 | ADV INTERCONNECTS SYST TECHNOL | 36381 | 0% | 67% | 2 |
3 | DPT MATIERE CONDENSEE MAT FONCT | 36381 | 0% | 67% | 2 |
4 | ADV PROC INTEGRAT NAKAHARA KU | 27286 | 0% | 100% | 1 |
5 | CVD BUSINESS UNIT | 27286 | 0% | 100% | 1 |
6 | DIELE ETCH ENGN GRP | 27286 | 0% | 100% | 1 |
7 | ELE ON DEVICES BUSINESS UNIT | 27286 | 0% | 100% | 1 |
8 | ELECT ENGN MYONGJI PHOTON ELECT EMBEDDED S | 27286 | 0% | 100% | 1 |
9 | ELECT MAT DEVICES PACKAGING | 27286 | 0% | 100% | 1 |
10 | GAZIBABA BB | 27286 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | THIN SOLID FILMS | 4259 | 7% | 0% | 76 |
2 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 3642 | 6% | 0% | 64 |
3 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2502 | 5% | 0% | 54 |
4 | MICROELECTRONICS RELIABILITY | 2231 | 2% | 0% | 24 |
5 | APPLIED SURFACE SCIENCE | 2030 | 5% | 0% | 52 |
6 | MICROELECTRONIC ENGINEERING | 1265 | 2% | 0% | 22 |
7 | IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING | 1132 | 0% | 1% | 4 |
8 | RESULTS IN PHYSICS | 1075 | 0% | 1% | 4 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1071 | 2% | 0% | 24 |
10 | ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 1066 | 0% | 1% | 3 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | TANTALUM OXIDE | 749193 | 8% | 31% | 88 | Search TANTALUM+OXIDE | Search TANTALUM+OXIDE |
2 | TA2O5 | 515420 | 6% | 27% | 69 | Search TA2O5 | Search TA2O5 |
3 | TANTALUM PENTOXIDE | 501342 | 4% | 44% | 42 | Search TANTALUM+PENTOXIDE | Search TANTALUM+PENTOXIDE |
4 | TANTALUM PENTOXIDE TA2O5 | 235829 | 1% | 79% | 11 | Search TANTALUM+PENTOXIDE+TA2O5 | Search TANTALUM+PENTOXIDE+TA2O5 |
5 | TANTALUM OXIDE FILMS | 167128 | 1% | 88% | 7 | Search TANTALUM+OXIDE+FILMS | Search TANTALUM+OXIDE+FILMS |
6 | TA2O5 THIN FILMS | 133700 | 1% | 70% | 7 | Search TA2O5+THIN+FILMS | Search TA2O5+THIN+FILMS |
7 | HIGH K STACK | 122786 | 1% | 75% | 6 | Search HIGH+K+STACK | Search HIGH+K+STACK |
8 | TANTALUM ETHOXIDE | 122786 | 1% | 75% | 6 | Search TANTALUM+ETHOXIDE | Search TANTALUM+ETHOXIDE |
9 | TA2O51 XTIO2X | 109146 | 0% | 100% | 4 | Search TA2O51+XTIO2X | Search TA2O51+XTIO2X |
10 | THIN TA2O5 FILM | 109146 | 0% | 100% | 4 | Search THIN+TA2O5+FILM | Search THIN+TA2O5+FILM |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CHANELIERE, C , AUTRAN, JL , DEVINE, RAB , BALLAND, B , (1998) TANTALUM PENTOXIDE (TA2O5) THIN FILMS FOR ADVANCED DIELECTRIC APPLICATIONS.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 22. ISSUE 6. P. 269 -322 | 125 | 69% | 434 |
2 | EZHILVALAVAN, S , TSENG, TY , (1999) PREPARATION AND PROPERTIES OF TANTALUM PENTOXIDE (TA2O5) THIN FILMS FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS (ULSIS) APPLICATION - A REVIEW.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 10. ISSUE 1. P. 9 -31 | 50 | 71% | 91 |
3 | GRAHN, JV , HELLBERG, PE , OLSSON, E , (1998) EFFECT OF GROWTH TEMPERATURE ON THE PROPERTIES OF EVAPORATED TANTALUM PENTOXIDE THIN FILMS ON SILICON DEPOSITED USING OXYGEN RADICALS.JOURNAL OF APPLIED PHYSICS. VOL. 84. ISSUE 3. P. 1632 -1642 | 34 | 89% | 27 |
4 | ATANASSOVA, E , (1999) THIN RF SPUTTERED AND THERMAL TA2O5 ON SI FOR HIGH DENSITY DRAM APPLICATION.MICROELECTRONICS RELIABILITY. VOL. 39. ISSUE 8. P. 1185 -1217 | 35 | 81% | 44 |
5 | BHANDARI, A , KANDARI, AS , AGARWAL, MK , LINGWAL, V , PANWAR, NS , (2010) SINTERING PROCESS DEPENDENT DIELECTRIC PROPERTIES OF [TA2O5]1-X-[TIO2]X, FOR THE COMPOSITIONS NEAR X=0.08.FERROELECTRICS LETTERS SECTION. VOL. 37. ISSUE 3. P. 43 -54 | 27 | 82% | 0 |
6 | DIMITROVA, T , ARSHAK, K , ATANASSOVA, E , (2001) CRYSTALLIZATION EFFECTS IN OXYGEN ANNEALED TA2O5 THIN FILMS ON SI.THIN SOLID FILMS. VOL. 381. ISSUE 1. P. 31 -38 | 27 | 100% | 33 |
7 | DEVAN, RS , HO, WD , CHEN, CH , SHIU, HW , HO, CH , CHENG, CL , WU, SY , LIOU, Y , MA, YR , (2009) HIGH ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ONE-DIMENSIONAL TA2O5 NANOROD ARRAYS.NANOTECHNOLOGY. VOL. 20. ISSUE 44. P. - | 31 | 66% | 17 |
8 | DEVAN, RS , LIN, CL , LIN, JH , WEN, TK , PATIL, RA , MA, YR , (2013) EFFECTIVE PHOTOLUMINESCENCE IN A LARGE-AREA ARRAY OF TA2O5 NANODOTS.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. VOL. 13. ISSUE 2. P. 1001 -1005 | 24 | 80% | 1 |
9 | SPASSOV, D , ATANASSOVA, E , (1998) THERMAL TA2O5 FILMS AS A GATE INSULATOR FOR THIN FILM CAPACITORS.INTERNATIONAL JOURNAL OF ELECTRONICS. VOL. 84. ISSUE 5. P. 453 -466 | 30 | 97% | 5 |
10 | IVANOV, MV , PEREVALOV, TV , ALIEV, VS , GRITSENKO, VA , KAICHEV, VV , (2011) ELECTRONIC STRUCTURE OF DELTA-TA2O5 WITH OXYGEN VACANCY: AB INITIO CALCULATIONS AND COMPARISON WITH EXPERIMENT.JOURNAL OF APPLIED PHYSICS. VOL. 110. ISSUE 2. P. - | 22 | 76% | 36 |
Classes with closest relation at Level 1 |