Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
19257 | 514 | 18.2 | 63% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
589 | 3 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 15224 |
664 | 2 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 13339 |
19257 | 1 | METAL INSULATOR METAL MIM CAPACITOR//METAL INSULATOR METAL MIM//VOLTAGE COEFFICIENT OF CAPACITANCE VCC | 514 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | METAL INSULATOR METAL MIM CAPACITOR | authKW | 1884167 | 8% | 77% | 41 |
2 | METAL INSULATOR METAL MIM | authKW | 1163930 | 7% | 58% | 34 |
3 | VOLTAGE COEFFICIENT OF CAPACITANCE VCC | authKW | 894586 | 3% | 94% | 16 |
4 | MIM CAPACITOR | authKW | 616761 | 6% | 36% | 29 |
5 | TEMPERATURE COEFFICIENT OF CAPACITANCE TCC | authKW | 570295 | 2% | 80% | 12 |
6 | VOLTAGE LINEARITY | authKW | 363861 | 1% | 88% | 7 |
7 | VOLTAGE COEFFICIENT OF CAPACITANCE | authKW | 356437 | 1% | 100% | 6 |
8 | CAPACITANCE DENSITY | authKW | 267319 | 2% | 50% | 9 |
9 | METAL INSULATOR METAL CAPACITOR | authKW | 220010 | 2% | 37% | 10 |
10 | TILAO | authKW | 190098 | 1% | 80% | 4 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 4074 | 52% | 0% | 267 |
2 | Physics, Applied | 3768 | 55% | 0% | 281 |
3 | Materials Science, Coatings & Films | 980 | 10% | 0% | 53 |
4 | Nanoscience & Nanotechnology | 797 | 14% | 0% | 72 |
5 | Physics, Condensed Matter | 232 | 13% | 0% | 67 |
6 | Electrochemistry | 183 | 6% | 0% | 29 |
7 | Materials Science, Multidisciplinary | 158 | 15% | 0% | 79 |
8 | Optics | 107 | 7% | 0% | 38 |
9 | Materials Science, Ceramics | 33 | 2% | 0% | 10 |
10 | Engineering, Manufacturing | 13 | 1% | 0% | 6 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CHAIR NANOELECT DEVICES | 178219 | 1% | 100% | 3 |
2 | FAB TEAM 3 | 118812 | 0% | 100% | 2 |
3 | NEW MAT EVALUAT | 92937 | 3% | 12% | 13 |
4 | MIXED SIGNAL GRP | 79207 | 0% | 67% | 2 |
5 | SILICON NANO DEVICE | 59581 | 3% | 6% | 17 |
6 | ADV PASS DEVICE DEV TEAM | 59406 | 0% | 100% | 1 |
7 | ASRC SPACE DEF | 59406 | 0% | 100% | 1 |
8 | CEA LETI D2NT | 59406 | 0% | 100% | 1 |
9 | CEA LETIMINATEC | 59406 | 0% | 100% | 1 |
10 | CHARTERED SILICON PARTNERS FAB 6 | 59406 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE ELECTRON DEVICE LETTERS | 40179 | 15% | 1% | 78 |
2 | MICROELECTRONIC ENGINEERING | 7560 | 7% | 0% | 36 |
3 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 5318 | 7% | 0% | 37 |
4 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1515 | 5% | 0% | 28 |
5 | ECS SOLID STATE LETTERS | 1483 | 1% | 1% | 3 |
6 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 1381 | 1% | 0% | 5 |
7 | SOLID-STATE ELECTRONICS | 849 | 2% | 0% | 12 |
8 | MICROELECTRONICS RELIABILITY | 841 | 2% | 0% | 10 |
9 | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS | 832 | 1% | 0% | 5 |
10 | APPLIED PHYSICS LETTERS | 770 | 8% | 0% | 39 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | PADMANABHAN, R , BHAT, N , MOHAN, S , (2012) HIGH-PERFORMANCE METAL-INSULATOR-METAL CAPACITORS USING EUROPIUM OXIDE AS DIELECTRIC.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 59. ISSUE 5. P. 1364 -1370 | 29 | 81% | 7 |
2 | ZHU, B , LIU, WJ , WEI, L , DING, SJ , (2016) VOLTAGE-DEPENDENT CAPACITANCE BEHAVIOR AND UNDERLYING MECHANISMS IN METAL-INSULATOR-METAL CAPACITORS WITH AL2O3-ZRO2-SIO2 NANO-LAMINATES.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 49. ISSUE 13. P. - | 21 | 88% | 1 |
3 | PADMANABHAN, R , MOHAN, S , MOROZUMI, Y , KAUSHAL, S , BHAT, N , (2016) PERFORMANCE AND RELIABILITY OF TIO2/ZRO2/TIO2 (TZT) AND ALO-DOPED TZT MIM CAPACITORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 10. P. 3928 -3935 | 21 | 75% | 0 |
4 | ZHU, B , LIU, WJ , WEI, L , ZHANG, DW , JIANG, AQ , DING, SJ , (2015) VOLTAGE LINEARITY MODULATION AND POLARITY DEPENDENT CONDUCTION IN METAL-INSULATOR-METAL CAPACITORS WITH ATOMIC-LAYER-DEPOSITED AL2O3/ZRO2/SIO2 NANO-STACKS.JOURNAL OF APPLIED PHYSICS. VOL. 118. ISSUE 1. P. - | 25 | 63% | 1 |
5 | PAVUNNY, SP , MISRA, P , SCOTT, JF , KATIYAR, RS , (2013) ADVANCED HIGH-K DIELECTRIC AMORPHOUS LAGDO3 BASED HIGH DENSITY METAL-INSULATOR-METAL CAPACITORS WITH SUB-NANOMETER CAPACITANCE EQUIVALENT THICKNESS.APPLIED PHYSICS LETTERS. VOL. 102. ISSUE 25. P. - | 19 | 76% | 4 |
6 | MANGLA, O , GUPTA, V , (2016) STUDY OF ELECTRICAL PROPERTIES OF HAFNIUM OXIDE THIN FILM BASED METAL-INSULATOR-METAL CAPACITORS: PRE AND POST METALLIC ANNEALING.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 27. ISSUE 12. P. 12527 -12532 | 15 | 88% | 0 |
7 | HUANG, CC , CHENG, CH , LIOU, BH , YEH, FS , CHIN, A , (2009) EFFECT OF TA2O5 DOPING ON ELECTRICAL CHARACTERISTICS OF SRTIO3 METAL-INSULATOR-METAL CAPACITORS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 48. ISSUE 8. P. - | 18 | 86% | 1 |
8 | PASKALEVA, A , LEMBERGER, M , BAUER, AJ , WEINREICH, W , HEITMANN, J , ERBEN, E , SCHRODER, U , OBERBECK, L , (2009) INFLUENCE OF THE AMORPHOUS/CRYSTALLINE PHASE OF ZR1-XALXO2 HIGH-K LAYERS ON THE CAPACITANCE PERFORMANCE OF METAL INSULATOR METAL STACKS.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 5. P. - | 17 | 77% | 11 |
9 | TSAI, CY , CHIANG, KC , LIN, SH , HSU, KC , CHI, CC , CHIN, A , (2010) IMPROVED CAPACITANCE DENSITY AND RELIABILITY OF HIGH-K NI/ZRO2/TIN MIM CAPACITORS USING LASER-ANNEALING TECHNIQUE.IEEE ELECTRON DEVICE LETTERS. VOL. 31. ISSUE 7. P. 749-751 | 14 | 88% | 16 |
10 | MONDAL, S , SHIH, SJ , CHEN, FH , PAN, TM , (2012) STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF LU2O3 DIELECTRIC EMBEDDED MIM CAPACITORS FOR ANALOG IC APPLICATIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 59. ISSUE 6. P. 1750 -1756 | 17 | 71% | 2 |
Classes with closest relation at Level 1 |