Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
28153 | 213 | 16.4 | 78% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
10 | 4 | OPTICS//PHYSICS, PARTICLES & FIELDS//PHYSICS, MULTIDISCIPLINARY | 1131262 |
185 | 3 | IEEE PHOTONICS TECHNOLOGY LETTERS//OPTICS//JOURNAL OF LIGHTWAVE TECHNOLOGY | 56126 |
372 | 2 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//VERTICAL CAVITY SURFACE EMITTING LASERS | 17248 |
28153 | 1 | GAINASP INP//CH4 H 2 RIE//MEMBRANE LASER | 213 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GAINASP INP | authKW | 2580420 | 17% | 50% | 36 |
2 | CH4 H 2 RIE | authKW | 2180557 | 8% | 89% | 17 |
3 | MEMBRANE LASER | authKW | 1576946 | 5% | 100% | 11 |
4 | OMVPE REGROWTH | authKW | 1445532 | 5% | 92% | 11 |
5 | QUANTUM EFFECT ELECT | address | 1434378 | 19% | 24% | 41 |
6 | QUANTUM NANOELECT | address | 965405 | 22% | 14% | 47 |
7 | DISTRIBUTED REFLECTOR DR LASER | authKW | 860152 | 3% | 100% | 6 |
8 | DISTRIBUTED REFLECTOR LASER | authKW | 716793 | 2% | 100% | 5 |
9 | QUANTUM WIRE LASER | authKW | 665910 | 6% | 39% | 12 |
10 | LATERAL CURRENT INJECTION | authKW | 573427 | 4% | 50% | 8 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 2672 | 70% | 0% | 150 |
2 | Engineering, Electrical & Electronic | 1667 | 52% | 0% | 110 |
3 | Optics | 1623 | 37% | 0% | 78 |
4 | Nanoscience & Nanotechnology | 20 | 4% | 0% | 9 |
5 | Computer Science, Hardware & Architecture | 17 | 2% | 0% | 4 |
6 | Telecommunications | 5 | 2% | 0% | 4 |
7 | Physics, Condensed Matter | 1 | 4% | 0% | 8 |
8 | Materials Science, Characterization, Testing | 1 | 0% | 0% | 1 |
9 | Physics, Multidisciplinary | 0 | 2% | 0% | 5 |
10 | Materials Science, Multidisciplinary | 0 | 4% | 0% | 9 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | QUANTUM EFFECT ELECT | 1434378 | 19% | 24% | 41 |
2 | QUANTUM NANOELECT | 965405 | 22% | 14% | 47 |
3 | KAWAGUCHI BLDG | 184315 | 1% | 43% | 3 |
4 | CENT GROWTH IL 3 5 | 143359 | 0% | 100% | 1 |
5 | QABIKO | 143359 | 0% | 100% | 1 |
6 | QUANTUM EFFECT ELE ON | 143359 | 0% | 100% | 1 |
7 | QUANTUM NANOELET | 143359 | 0% | 100% | 1 |
8 | SEMICOND STATE ARTIFICIAL MICROSTRUCT | 143359 | 0% | 100% | 1 |
9 | QUANTUM EFFECTS ELECT | 143357 | 1% | 50% | 2 |
10 | EPSRC SEMICOND GROWTH IL | 71678 | 0% | 50% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 12836 | 9% | 0% | 19 |
2 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 6878 | 11% | 0% | 24 |
3 | IEEE PHOTONICS TECHNOLOGY LETTERS | 6455 | 13% | 0% | 27 |
4 | ELECTRONICS LETTERS | 2657 | 13% | 0% | 27 |
5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2231 | 10% | 0% | 22 |
6 | IEEE JOURNAL OF QUANTUM ELECTRONICS | 1674 | 5% | 0% | 10 |
7 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 1145 | 1% | 0% | 2 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS | 721 | 4% | 0% | 9 |
9 | IEEE CIRCUITS & DEVICES | 414 | 0% | 0% | 1 |
10 | APPLIED PHYSICS EXPRESS | 348 | 1% | 0% | 3 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAINASP INP | 2580420 | 17% | 50% | 36 | Search GAINASP+INP | Search GAINASP+INP |
2 | CH4 H 2 RIE | 2180557 | 8% | 89% | 17 | Search CH4+H+2+RIE | Search CH4+H+2+RIE |
3 | MEMBRANE LASER | 1576946 | 5% | 100% | 11 | Search MEMBRANE+LASER | Search MEMBRANE+LASER |
4 | OMVPE REGROWTH | 1445532 | 5% | 92% | 11 | Search OMVPE+REGROWTH | Search OMVPE+REGROWTH |
5 | DISTRIBUTED REFLECTOR DR LASER | 860152 | 3% | 100% | 6 | Search DISTRIBUTED+REFLECTOR+DR+LASER | Search DISTRIBUTED+REFLECTOR+DR+LASER |
6 | DISTRIBUTED REFLECTOR LASER | 716793 | 2% | 100% | 5 | Search DISTRIBUTED+REFLECTOR+LASER | Search DISTRIBUTED+REFLECTOR+LASER |
7 | QUANTUM WIRE LASER | 665910 | 6% | 39% | 12 | Search QUANTUM+WIRE+LASER | Search QUANTUM+WIRE+LASER |
8 | LATERAL CURRENT INJECTION | 573427 | 4% | 50% | 8 | Search LATERAL+CURRENT+INJECTION | Search LATERAL+CURRENT+INJECTION |
9 | STRAIN COMPENSATED QUANTUM WELL STRUCTURE | 458746 | 2% | 80% | 4 | Search STRAIN+COMPENSATED+QUANTUM+WELL+STRUCTURE | Search STRAIN+COMPENSATED+QUANTUM+WELL+STRUCTURE |
10 | DR LASER | 430076 | 1% | 100% | 3 | Search DR+LASER | Search DR+LASER |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SHINDO, T , OKUMURA, T , ITO, H , KOGUCHI, T , TAKAHASHI, D , ATSUMI, Y , KANG, J , OSABE, R , AMEMIYA, T , NISHIYAMA, N , ET AL (2011) GAINASP/INP LATERAL-CURRENT-INJECTION DISTRIBUTED FEEDBACK LASER WITH A-SI SURFACE GRATING.OPTICS EXPRESS. VOL. 19. ISSUE 3. P. 1884-1891 | 18 | 72% | 9 |
2 | NISHIMOTO, Y , MIURA, K , YAGI, H , PLUMWONGROT, D , OHIRA, K , MARUYAMA, T , ARAI, S , (2007) LOW-THRESHOLD CURRENT DENSITY GAINASP/INP QUANTUM-WIRE DISTRIBUTED FEEDBACK LASERS FABRICATED BY LOW-DAMAGE PROCESSES.JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. VOL. 46. ISSUE 1-3. P. L34-L36 | 15 | 79% | 4 |
3 | ARAI, S , NISHIYAMA, N , MARUYAMA, T , OKUMURA, T , (2011) GAINASP/INP MEMBRANE LASERS FOR OPTICAL INTERCONNECTS.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 17. ISSUE 5. P. 1381 -1389 | 23 | 44% | 12 |
4 | INOUE, D , HIRATANI, T , ATSUJI, Y , TOMIYASU, T , AMEMIYA, T , NISHIYAMA, N , ARAI, S , (2015) MONOLITHIC INTEGRATION OF MEMBRANE-BASED BUTT-JOINTED BUILT-IN DFB LASERS AND P-I-N PHOTODIODES BONDED ON SI SUBSTRATE.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 21. ISSUE 6. P. - | 16 | 55% | 0 |
5 | INOUE, D , LEE, J , HIRATANI, T , ATSUJI, Y , AMEMIYA, T , NISHIYAMA, N , ARAI, S , (2015) SUB-MILLIAMPERE THRESHOLD OPERATION OF BUTT-JOINTED BUILT-IN MEMBRANE DFB LASER BONDED ON SI SUBSTRATE.OPTICS EXPRESS. VOL. 23. ISSUE 6. P. 7771 -7778 | 14 | 58% | 4 |
6 | YAGI, H , SANO, T , OHIRA, K , PLUMWONGROT, D , MARUYAMA, T , HAQUE, A , TAMURA, S , ARAI, S , (2004) GAINASP/INP PARTIALLY STRAIN-COMPENSATED MULTIPLE-QUANTUM-WIRE LASERS FABRICATED BY DRY ETCHING AND REGROWTH PROCESSES.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 43. ISSUE 6A. P. 3401-3409 | 16 | 62% | 17 |
7 | ATSUJI, Y , DOI, K , HIRATANI, T , INOUE, D , LEE, J , ATSUMI, Y , AMEMIYA, T , NISHIYAMA, N , ARAI, S , (2015) LOW-THRESHOLD-CURRENT OPERATION OF MEMBRANE DISTRIBUTED-FEEDBACK LASER WITH SURFACE GRATING BONDED ON SI SUBSTRATE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 8. P. - | 12 | 63% | 0 |
8 | ARAI, S , MARUYAMA, T , (2009) GAINASP/INP QUANTUM WIRE LASERS.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 15. ISSUE 3. P. 731-742 | 29 | 29% | 2 |
9 | SHINDO, T , FUTAMI, M , DOI, K , AMEMIYA, T , NISHIYAMA, N , ARAI, S , (2013) DESIGN OF LATERAL-CURRENT-INJECTION-TYPE MEMBRANE DISTRIBUTED-FEEDBACK LASERS FOR ON-CHIP OPTICAL INTERCONNECTIONS.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 19. ISSUE 4. P. - | 14 | 54% | 1 |
10 | YAGI, H , MURANUSHI, K , NUNOYA, N , SANO, T , TAMURA, S , ARAI, S , (2002) LOW-DAMAGE ETCHED/REGROWN INTERFACE OF STRAIN-COMPENSATED GAINASP/INP QUANTUM-WIRE LASER FABRICATED BY CH4/H-2 DRY ETCHING AND REGROWTH.APPLIED PHYSICS LETTERS. VOL. 81. ISSUE 6. P. 966-968 | 12 | 80% | 14 |
Classes with closest relation at Level 1 |