Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
21249 | 427 | 13.3 | 30% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
270 | 3 | IEEE TRANSACTIONS ON PLASMA SCIENCE//DIELECTRIC BARRIER DISCHARGE//PLASMA CHEMISTRY AND PLASMA PROCESSING | 43994 |
2975 | 2 | PULSE TRANSFORMER//MARX GENERATOR//PULSED POWER | 2627 |
21249 | 1 | EMITTER TURN OFF THYRISTOR ETO//GATE COMMUTATED THYRISTOR GCT//MAXIMUM CONTROLLABLE CURRENT | 427 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | EMITTER TURN OFF THYRISTOR ETO | authKW | 429063 | 1% | 100% | 6 |
2 | GATE COMMUTATED THYRISTOR GCT | authKW | 357552 | 1% | 100% | 5 |
3 | MAXIMUM CONTROLLABLE CURRENT | authKW | 160897 | 1% | 75% | 3 |
4 | CORRUGATED BASE JUNCTIONS | authKW | 143021 | 0% | 100% | 2 |
5 | FULL WAFER MODELING | authKW | 143021 | 0% | 100% | 2 |
6 | GATE DRIVE UNIT | authKW | 143021 | 0% | 100% | 2 |
7 | INTEGRATED ETO IETO | authKW | 143021 | 0% | 100% | 2 |
8 | INTERNALLY COMMUTATED THYRISTOR ICT | authKW | 143021 | 0% | 100% | 2 |
9 | KAWAUCHI | address | 143021 | 0% | 100% | 2 |
10 | MAXIMUM CONTROLLABLE CURRENT MCC | authKW | 143021 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 8812 | 82% | 0% | 350 |
2 | Physics, Applied | 1940 | 44% | 0% | 187 |
3 | COMPUTER APPLICATIONS & CYBERNETICS | 430 | 1% | 0% | 4 |
4 | Physics, Condensed Matter | 302 | 16% | 0% | 67 |
5 | Engineering, General | 102 | 4% | 0% | 18 |
6 | Telecommunications | 79 | 4% | 0% | 18 |
7 | Instruments & Instrumentation | 30 | 4% | 0% | 15 |
8 | Engineering, Aerospace | 17 | 1% | 0% | 5 |
9 | Computer Science, Hardware & Architecture | 16 | 1% | 0% | 6 |
10 | Nanoscience & Nanotechnology | 9 | 3% | 0% | 11 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | KAWAUCHI | 143021 | 0% | 100% | 2 |
2 | DIPARTIMENTO INGN ELECTT ELECTT SIST | 71510 | 0% | 100% | 1 |
3 | DIPARTIMENTO INGN ELECTTR TELECOMUN | 71510 | 0% | 100% | 1 |
4 | INTEGRATED ELECT MFG | 71510 | 0% | 100% | 1 |
5 | MICROELECT INFORMAT ELECT 229 | 71510 | 0% | 100% | 1 |
6 | STAT INDUCT DEVICE | 71510 | 0% | 100% | 1 |
7 | STRATEG ELECT | 71510 | 0% | 100% | 1 |
8 | TORY 2300 | 71510 | 0% | 100% | 1 |
9 | STAT INDUCT DEVICES | 71508 | 0% | 50% | 2 |
10 | ELECT TEORICA MEDIDAS ELECT | 35754 | 0% | 50% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 42594 | 22% | 1% | 95 |
2 | SOLID-STATE ELECTRONICS | 16715 | 11% | 0% | 48 |
3 | TOSHIBA REVIEW | 16497 | 1% | 8% | 3 |
4 | IEEE ELECTRON DEVICE LETTERS | 8108 | 7% | 0% | 32 |
5 | INTERNATIONAL JOURNAL OF ELECTRONICS | 7819 | 5% | 0% | 23 |
6 | JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 6493 | 1% | 2% | 4 |
7 | IEEE TRANSACTIONS ON POWER ELECTRONICS | 4246 | 5% | 0% | 20 |
8 | ARCHIV FUR ELEKTROTECHNIK | 2945 | 1% | 1% | 5 |
9 | ETZ ARCHIV | 2687 | 1% | 1% | 3 |
10 | IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2542 | 4% | 0% | 16 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | BELLONE, S , DI BENEDETTO, L , LICCIARDO, GD , (2012) A QUASI-ONE-DIMENSIONAL MODEL OF THE POTENTIAL BARRIER AND CARRIER DENSITY IN THE CHANNEL OF SI AND 4H-SIC BSITS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 59. ISSUE 9. P. 2546-2549 | 10 | 83% | 3 |
2 | WANG, YS , FENG, JJ , LIU, CJ , WANG, ZT , WANG, ZX , ZHANG, CZ , (2012) IMPROVEMENTS ON VOLTAGE-RESISTANT PERFORMANCE OF BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT) WITH BURIED GATE STRUCTURE.SCIENCE CHINA-INFORMATION SCIENCES. VOL. 55. ISSUE 4. P. 962 -970 | 8 | 100% | 1 |
3 | LIU, CJ , LIU, S , BAI, YJ , (2014) SWITCHING PERFORMANCES OF STATIC INDUCTION THYRISTOR WITH BURIED-GATE STRUCTURE.SCIENCE CHINA-INFORMATION SCIENCES. VOL. 57. ISSUE 6. P. - | 7 | 100% | 0 |
4 | WANG, YS , WU, R , LIU, CJ , WANG, ZT , (2008) RESEARCHES ON THE INJECTED CHARGE POTENTIAL BARRIER OCCURRING IN THE STATIC INDUCTION TRANSISTOR IN THE HIGH CURRENT REGION.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 23. ISSUE 2. P. - | 8 | 100% | 0 |
5 | SILARD, AP , TURTUDAU, FI , MARGARIT, MN , KOSA, BB , (1987) HIGH-POWER DOUBLE-INTERDIGITATED (TIL) GTO GAT THYRISTORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 34. ISSUE 8. P. 1807 -1815 | 17 | 100% | 3 |
6 | WANG, YS , LUO, XL , LI, HR , WANG, ZT , WU, R , ZHANG, CZ , LI, SY , (2010) IMPROVEMENTS ON RADIATION-HARDENED PERFORMANCE OF STATIC INDUCTION TRANSISTOR.SCIENCE CHINA-INFORMATION SCIENCES. VOL. 53. ISSUE 5. P. 1089 -1096 | 8 | 80% | 3 |
7 | BLEICHNER, H , NORDGREN, K , ROSLING, M , BAKOWSKI, M , NORDLANDER, E , (1995) THE EFFECT OF EMITTER SHORTINGS ON TURN-OFF LIMITATIONS AND DEVICE FAILURE IN GTO THYRISTORS UNDER SNUBBERLESS OPERATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 42. ISSUE 1. P. 178-187 | 9 | 100% | 1 |
8 | STROLLO, AGM , (1995) TRADE-OFF BETWEEN BLOCKING GAIN AND ON-RESISTANCE IN STATIC INDUCTION TRANSISTOR.SOLID-STATE ELECTRONICS. VOL. 38. ISSUE 2. P. 309-315 | 11 | 79% | 5 |
9 | VOBECKY, J , BLEICHNER, H , ROSLING, M , NORDLANDER, E , (1993) A TIME-DEPENDENT 2-DIMENSIONAL ANALYSIS OF THE TURN-OFF PROCESS IN A GATE TURN-OFF THYRISTOR (GTO).IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 40. ISSUE 12. P. 2352-2358 | 9 | 100% | 1 |
10 | TADANO, H , ISHIKO, M , KAWAJI, S , TAGA, Y , (1997) LOW LOSS STATIC INDUCTION DEVICES (TRANSISTORS AND THYRISTORS).MICROELECTRONICS RELIABILITY. VOL. 37. ISSUE 9. P. 1389 -1396 | 7 | 100% | 1 |
Classes with closest relation at Level 1 |