Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
8494 | 1248 | 22.8 | 64% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
3149 | 2 | CLEANROOM//PHOTORESIST REMOVAL//MINIENVIRONMENT | 2235 |
8494 | 1 | HYDROGEN TERMINATION//NATIVE OXIDE//HYDRIDE SPECIES | 1248 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | HYDROGEN TERMINATION | authKW | 159205 | 2% | 24% | 27 |
2 | NATIVE OXIDE | authKW | 105198 | 2% | 22% | 20 |
3 | HYDRIDE SPECIES | authKW | 97863 | 0% | 100% | 4 |
4 | NATIVE OXIDATION | authKW | 87375 | 0% | 71% | 5 |
5 | H TERMINATION | authKW | 87365 | 1% | 36% | 10 |
6 | ECR PLASMA SPUTTERING | authKW | 79914 | 1% | 47% | 7 |
7 | NINAMI KU | address | 78289 | 0% | 80% | 4 |
8 | HF TREATED SILICON | authKW | 73397 | 0% | 100% | 3 |
9 | HFON GATE INSULATOR | authKW | 73397 | 0% | 100% | 3 |
10 | MULTIREFLECTION ATR | authKW | 73397 | 0% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 15337 | 25% | 0% | 317 |
2 | Physics, Applied | 6619 | 47% | 0% | 587 |
3 | Electrochemistry | 5200 | 18% | 0% | 220 |
4 | Physics, Condensed Matter | 2634 | 25% | 0% | 316 |
5 | Chemistry, Physical | 706 | 18% | 0% | 229 |
6 | Materials Science, Multidisciplinary | 534 | 17% | 0% | 217 |
7 | Nanoscience & Nanotechnology | 413 | 7% | 0% | 88 |
8 | Engineering, Electrical & Electronic | 335 | 12% | 0% | 150 |
9 | Engineering, Manufacturing | 29 | 1% | 0% | 14 |
10 | Microscopy | 14 | 0% | 0% | 6 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NINAMI KU | 78289 | 0% | 80% | 4 |
2 | ABT SILIZIUMPHOTOVOLTAIK | 55047 | 0% | 75% | 3 |
3 | KDG | 48932 | 0% | 100% | 2 |
4 | ABT PHOTOVOLTAIK | 34241 | 1% | 20% | 7 |
5 | NEW IND CREAT HATCHERY CENTER | 32620 | 0% | 67% | 2 |
6 | POST SILICON TECHNOL | 31453 | 0% | 43% | 3 |
7 | NEW IND CREAT HATCHERY | 27526 | 3% | 3% | 36 |
8 | PRECIS SCI TECHNOL | 26994 | 2% | 5% | 22 |
9 | ABT POTOVOLTAIK | 24466 | 0% | 100% | 1 |
10 | BILKENT UNIV | 24466 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 24917 | 14% | 1% | 175 |
2 | SOLID STATE PHENOMENA | 22452 | 4% | 2% | 45 |
3 | MICRO | 11243 | 1% | 5% | 9 |
4 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 5361 | 7% | 0% | 83 |
5 | SOLID STATE TECHNOLOGY | 4737 | 2% | 1% | 19 |
6 | MICROCONTAMINATION | 3911 | 0% | 8% | 2 |
7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 3436 | 4% | 0% | 45 |
8 | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 3042 | 1% | 1% | 14 |
9 | APPLIED SURFACE SCIENCE | 2860 | 5% | 0% | 65 |
10 | SURFACE SCIENCE | 2471 | 4% | 0% | 53 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HYDROGEN TERMINATION | 159205 | 2% | 24% | 27 | Search HYDROGEN+TERMINATION | Search HYDROGEN+TERMINATION |
2 | NATIVE OXIDE | 105198 | 2% | 22% | 20 | Search NATIVE+OXIDE | Search NATIVE+OXIDE |
3 | HYDRIDE SPECIES | 97863 | 0% | 100% | 4 | Search HYDRIDE+SPECIES | Search HYDRIDE+SPECIES |
4 | NATIVE OXIDATION | 87375 | 0% | 71% | 5 | Search NATIVE+OXIDATION | Search NATIVE+OXIDATION |
5 | H TERMINATION | 87365 | 1% | 36% | 10 | Search H+TERMINATION | Search H+TERMINATION |
6 | ECR PLASMA SPUTTERING | 79914 | 1% | 47% | 7 | Search ECR+PLASMA+SPUTTERING | Search ECR+PLASMA+SPUTTERING |
7 | HF TREATED SILICON | 73397 | 0% | 100% | 3 | Search HF+TREATED+SILICON | Search HF+TREATED+SILICON |
8 | HFON GATE INSULATOR | 73397 | 0% | 100% | 3 | Search HFON+GATE+INSULATOR | Search HFON+GATE+INSULATOR |
9 | MULTIREFLECTION ATR | 73397 | 0% | 100% | 3 | Search MULTIREFLECTION+ATR | Search MULTIREFLECTION+ATR |
10 | RCA ETCHANT | 73397 | 0% | 100% | 3 | Search RCA+ETCHANT | Search RCA+ETCHANT |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | WATANABE, S , (1998) CHEMICAL STRUCTURE AND SURFACE PHONONS ASSOCIATED WITH H ON SI.JOURNAL OF CHEMICAL PHYSICS. VOL. 108. ISSUE 14. P. 5965-5974 | 31 | 94% | 23 |
2 | CAUDANO, Y , THIRY, PA , CHABAL, YJ , (2002) INVESTIGATION OF THE BENDING VIBRATIONS OF VICINAL H/SI(111) SURFACES BY INFRARED SPECTROSCOPY.SURFACE SCIENCE. VOL. 502. ISSUE . P. 91-95 | 25 | 100% | 5 |
3 | BERTAGNA, V , ROUELLE, F , ERRE, R , CHEMLA, M , (2000) ELECTROCHEMICAL TEST FOR SILICON SURFACE CONTAMINATION BY COPPER TRACES IN HF, HF PLUS HCL AND HF+NH4F DILUTE SOLUTIONS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 15. ISSUE 2. P. 121 -125 | 26 | 93% | 4 |
4 | ANGERMANN, H , HENRION, W , REBIEN, M , ROSELER, A , (2004) WET-CHEMICAL PREPARATION AND SPECTROSCOPIC CHARACTERIZATION OF SI INTERFACES.APPLIED SURFACE SCIENCE. VOL. 235. ISSUE 3. P. 322-339 | 30 | 67% | 40 |
5 | ANGERMANN, H , (2008) PASSIVATION OF STRUCTURED P-TYPE SILICON INTERFACES: EFFECT OF SURFACE MORPHOLOGY AND WET-CHEMICAL PRE-TREATMENT.APPLIED SURFACE SCIENCE. VOL. 254. ISSUE 24. P. 8067 -8074 | 23 | 77% | 24 |
6 | KOLIBAL, M , CECHAL, J , BARTOSIK, M , MACH, J , SIKOLA, T , (2010) STABILITY OF HYDROGEN-TERMINATED VICINAL SI(111) SURFACE UNDER AMBIENT ATMOSPHERE.APPLIED SURFACE SCIENCE. VOL. 256. ISSUE 11. P. 3423 -3426 | 21 | 81% | 8 |
7 | TOMITA, N , ADACHI, S , (2002) CHARACTERIZATION OF SI(111) SURFACES TREATED IN NH4F AND NH4HF2 SOLUTIONS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 149. ISSUE 4. P. G245-G250 | 28 | 76% | 13 |
8 | PIETSCH, GJ , (1995) HYDROGEN ON SI - UBIQUITOUS SURFACE TERMINATION AFTER WET-CHEMICAL PROCESSING.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 60. ISSUE 4. P. 347-363 | 44 | 56% | 67 |
9 | WATANABE, S , (1998) STEP STRUCTURE OF SILICON SURFACE HYDROGENATED IN SOLUTION AS REVEALED WITH ANGLE-RESOLVED POLARIZED INFRARED SPECTROSCOPY.SURFACE SCIENCE. VOL. 415. ISSUE 3. P. 385-391 | 26 | 93% | 11 |
10 | KATO, H , TAOKA, T , NISHIKATA, S , SAZAKI, G , YAMADA, T , CZAJKA, R , WAWRO, A , NAKAJIMA, K , KASUYA, A , SUTO, S , (2007) PREPARATION OF AN ULTRACLEAN AND ATOMICALLY CONTROLLED HYDROGEN-TERMINATED SI(111)-(1X1) SURFACE REVEALED BY HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY, ATOMIC FORCE MICROSCOPY, AND SCANNING TUNNELING MICROSCOPY: AQUEOUS NH4F ETCHING PROCESS OF SI(111).JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 46. ISSUE 9A. P. 5701-5705 | 22 | 81% | 7 |
Classes with closest relation at Level 1 |