Class information for:
Level 1: POROUS INP//POROUS SIC//LOW DIMENS SEMICOND STRUCT

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
15527 707 21.0 74%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
1125 2             POROUS SILICON//ELECTROCHEMICAL ETCHING//POROUS SI 9675
15527 1                   POROUS INP//POROUS SIC//LOW DIMENS SEMICOND STRUCT 707

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 POROUS INP authKW 564331 2% 93% 14
2 POROUS SIC authKW 518240 3% 50% 24
3 LOW DIMENS SEMICOND STRUCT address 456265 4% 39% 27
4 POROUS GAN authKW 381238 2% 55% 16
5 POROUS INGAN authKW 259132 1% 100% 6
6 POROUS GAAS authKW 259120 2% 50% 12
7 MAT STUDY TESTING address 248817 3% 26% 22
8 POROUS SILICON CARBIDE authKW 172743 1% 40% 10
9 ELECTROCHEMICAL ETCHING authKW 131565 5% 10% 32
10 ANODIC ETCHING authKW 130861 1% 30% 10

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 2618 40% 0% 282
2 Physics, Condensed Matter 2487 32% 0% 226
3 Materials Science, Multidisciplinary 1707 36% 0% 252
4 Materials Science, Coatings & Films 1238 10% 0% 70
5 Electrochemistry 845 10% 0% 69
6 Nanoscience & Nanotechnology 374 9% 0% 61
7 Optics 152 7% 0% 53
8 Materials Science, Characterization, Testing 129 2% 0% 13
9 Engineering, Electrical & Electronic 102 10% 0% 68
10 Chemistry, Physical 26 7% 0% 53

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 LOW DIMENS SEMICOND STRUCT 456265 4% 39% 27
2 MAT STUDY TESTING 248817 3% 26% 22
3 LC DMX 97173 0% 75% 3
4 CECYT 86377 0% 100% 2
5 NANOOPTELECT TECHNOL 86377 0% 100% 2
6 LKO 46014 1% 12% 9
7 AKAD GLUSHKOV PROSPECT 43189 0% 100% 1
8 BP 95 43189 0% 100% 1
9 CHEMMICRO NANOTECHNOL 43189 0% 100% 1
10 CRI NAT SCI 43189 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEMICONDUCTORS 6943 5% 0% 33
2 ELECTROCHEMICAL AND SOLID STATE LETTERS 4427 3% 0% 21
3 MATERIALS SCIENCE FORUM 2813 5% 0% 34
4 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2594 3% 0% 22
5 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 2292 5% 0% 33
6 TECHNICAL PHYSICS LETTERS 1904 2% 0% 17
7 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 1616 5% 0% 34
8 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 1062 1% 0% 5
9 APPLIED PHYSICS LETTERS 839 7% 0% 48
10 SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY 543 0% 1% 2

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 POROUS INP 564331 2% 93% 14 Search POROUS+INP Search POROUS+INP
2 POROUS SIC 518240 3% 50% 24 Search POROUS+SIC Search POROUS+SIC
3 POROUS GAN 381238 2% 55% 16 Search POROUS+GAN Search POROUS+GAN
4 POROUS INGAN 259132 1% 100% 6 Search POROUS+INGAN Search POROUS+INGAN
5 POROUS GAAS 259120 2% 50% 12 Search POROUS+GAAS Search POROUS+GAAS
6 POROUS SILICON CARBIDE 172743 1% 40% 10 Search POROUS+SILICON+CARBIDE Search POROUS+SILICON+CARBIDE
7 ELECTROCHEMICAL ETCHING 131565 5% 10% 32 Search ELECTROCHEMICAL+ETCHING Search ELECTROCHEMICAL+ETCHING
8 ANODIC ETCHING 130861 1% 30% 10 Search ANODIC+ETCHING Search ANODIC+ETCHING
9 PA MBE 89971 1% 42% 5 Search PA+MBE Search PA+MBE
10 ALTERNATING CURRENT PHOTO ASSISTED ELECTROCHEMICAL ETCHING ACPEC 86377 0% 100% 2 Search ALTERNATING+CURRENT+PHOTO+ASSISTED+ELECTROCHEMICAL+ETCHING+ACPEC Search ALTERNATING+CURRENT+PHOTO+ASSISTED+ELECTROCHEMICAL+ETCHING+ACPEC

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 CAO, TA , LUONG, TQN , DAO, TC , (2016) GREEN SYNTHESIS OF A CARBON-RICH LAYER ON THE SURFACE OF SIC AT ROOM TEMPERATURE BY ANODIC ETCHING IN DILUTE HYDROFLUORIC ACID/ETHYLENE GLYCOL SOLUTION.GREEN PROCESSING AND SYNTHESIS. VOL. 5. ISSUE 5. P. 491 -498 24 75% 0
2 SANTINACCI, L , DJENIZIAN, T , (2008) ELECTROCHEMICAL PORE FORMATION ONTO SEMICONDUCTOR SURFACES.COMPTES RENDUS CHIMIE. VOL. 11. ISSUE 9. P. 964 -983 55 34% 16
3 SHEN, YC , LEU, IC , LAI, WH , WU, MT , HON, MH , (2008) VARIED MORPHOLOGY OF POROUS GAP(111) FORMED BY ANODIZATION.JOURNAL OF ALLOYS AND COMPOUNDS. VOL. 454. ISSUE 1-2. P. L3-L9 20 95% 6
4 KUMAZAKI, Y , KUDO, T , YATABE, Z , SATO, T , (2013) INVESTIGATION ON OPTICAL ABSORPTION PROPERTIES OF ELECTROCHEMICALLY FORMED POROUS INP USING PHOTOELECTRIC CONVERSION DEVICES.APPLIED SURFACE SCIENCE. VOL. 279. ISSUE . P. 116 -120 21 81% 1
5 TANAKA, A , KATSUNO, H , (2009) FORMATION OF BARE POROUS SURFACE ON 6H-SIC SUBSTRATES BY PHOTO-ELECTROCHEMICAL ETCHING.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 48. ISSUE 12. P. - 21 88% 0
6 LYNCH, RP , O'DWYER, C , QUILL, N , NAKAHARA, S , NEWCOMB, SB , BUCKLEY, DN , (2013) PORE PROPAGATION DIRECTIONS AND NANOPOROUS DOMAIN SHAPE IN N-INP ANODIZED IN KOH.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 160. ISSUE 6. P. D260 -D270 32 50% 1
7 KONAKOVA, RV , KOLOMYS, OF , LYTVYN, OS , OKHRIMENKO, OB , STRELCHUK, VV , SVETLICHNYI, AM , LINETS, LG , (2012) TRANSFORMATION OF A SIC/POR-SIC/TIO2 STRUCTURE DURING RAPID THERMAL ANNEALING.SEMICONDUCTORS. VOL. 46. ISSUE 9. P. 1221 -1224 19 86% 0
8 OMIYA, T , TANAKA, A , SHIMOMURA, M , (2012) MORPHOLOGICAL STUDY ON POROUS SILICON CARBIDE MEMBRANE FABRICATED BY DOUBLE-STEP ELECTROCHEMICAL ETCHING.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 7. P. - 18 86% 3
9 FOLL, H , LANGA, S , CARSTENSEN, J , CHRISTOPHERSEN, M , TIGINYANU, IM , (2003) PORES IN III-V SEMICONDUCTORS.ADVANCED MATERIALS. VOL. 15. ISSUE 3. P. 183-+ 31 51% 149
10 BEREZOVSKA, NI , BACHERIKOV, YY , KONAKOVA, RV , OKHRIMENKO, OB , LYTVYN, OS , LINETS, LG , SVETLICHNYI, AM , (2014) CHARACTERIZATION OF POROUS SILICON CARBIDE ACCORDING TO ABSORPTION AND PHOTOLUMINESCENCE SPECTRA.SEMICONDUCTORS. VOL. 48. ISSUE 8. P. 1028 -1030 14 100% 2

Classes with closest relation at Level 1


Rank Class id link
1 13493 CHAIR GEN MAT SCI//MACROPOROUS SILICON//ELECTROCHEMICAL ETCHING
2 16807 SOCIOTECHNO SCI TECHNOL//SEMICONDUCTOR ELECTROLYTE CONTACTS//MAT STUDY TESTING
3 106 POROUS SILICON//POROUS SI//STAIN ETCHING
4 25791 TEXTURED INTERFACE//MICRORELIEF INTERFACE//BEIJING CONDENSD MATTER PHYS
5 5206 SIC NANOWIRES//SILICON CARBIDE NANOWIRES//CARBOTHERMAL REDUCTION
6 7949 POROUS SILICON//POROUS SILICON NANOPARTICLES//IND PHYS
7 36570 NANOMETER SIZED SCHOTTKY CONTACT//KSRC//BRIDGE METAL ION
8 7015 3C SIC//MONOMETHYLSILANE//FG NANOTECHNOL
9 3942 GAN//METALORGANIC CHEMICAL VAPOR DEPOSITION//NITRIDES
10 29884 ULYANOVSK BRANCH//BREIT OPERATOR//LIGHT INTENSITY FLUCTUATIONS

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