Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
13364 | 842 | 23.0 | 34% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
2384 | 2 | IR LASERS//OPT SENSORS SPECT//SOVIET PHYSICS SEMICONDUCTORS-USSR | 4257 |
13364 | 1 | GAP N//ALGAINP STQW LASER//CENTROTECH | 842 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GAP N | authKW | 108791 | 0% | 100% | 3 |
2 | ALGAINP STQW LASER | authKW | 36264 | 0% | 100% | 1 |
3 | CENTROTECH | address | 36264 | 0% | 100% | 1 |
4 | CHANGED ISOTOPIC COMPOSITION | authKW | 36264 | 0% | 100% | 1 |
5 | DEFECT DROPS | authKW | 36264 | 0% | 100% | 1 |
6 | ECOL NORMALE SUPER PHYS SOLIDES GRP | address | 36264 | 0% | 100% | 1 |
7 | GAAS N | authKW | 36264 | 0% | 100% | 1 |
8 | ISOELECTRIC IMPURITY | authKW | 36264 | 0% | 100% | 1 |
9 | LASER OPERATION INDUCED MIGRATION | authKW | 36264 | 0% | 100% | 1 |
10 | MET PHYS URA 131 CNRS | address | 36264 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 12548 | 63% | 0% | 532 |
2 | Physics, Multidisciplinary | 1018 | 17% | 0% | 145 |
3 | Physics, Applied | 626 | 20% | 0% | 167 |
4 | Materials Science, Multidisciplinary | 105 | 11% | 0% | 95 |
5 | Mathematics, Interdisciplinary Applications | 23 | 2% | 0% | 14 |
6 | COMPUTER APPLICATIONS & CYBERNETICS | 12 | 0% | 0% | 1 |
7 | Optics | 5 | 3% | 0% | 22 |
8 | Crystallography | 2 | 1% | 0% | 9 |
9 | Materials Science, Coatings & Films | 1 | 1% | 0% | 6 |
10 | Physics, Fluids & Plasmas | 0 | 1% | 0% | 6 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CENTROTECH | 36264 | 0% | 100% | 1 |
2 | ECOL NORMALE SUPER PHYS SOLIDES GRP | 36264 | 0% | 100% | 1 |
3 | MET PHYS URA 131 CNRS | 36264 | 0% | 100% | 1 |
4 | PHYS ELE HPT | 36264 | 0% | 100% | 1 |
5 | SETU | 36264 | 0% | 100% | 1 |
6 | ECOLE SUPER PHYS SOLIDES GRP | 18131 | 0% | 50% | 1 |
7 | MICROPROCESSOR COMP | 9319 | 0% | 9% | 3 |
8 | MICROPROC COMP | 5575 | 0% | 8% | 2 |
9 | HIGH VOLTAGE EQUIPMENT | 4531 | 0% | 13% | 1 |
10 | CIENCIAS FIS FIS MAT | 4028 | 0% | 11% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 11422 | 5% | 1% | 42 |
2 | PHYSICA B & C | 10597 | 4% | 1% | 34 |
3 | PHYSICAL REVIEW B | 9688 | 25% | 0% | 211 |
4 | JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 5296 | 3% | 1% | 27 |
5 | SOLID STATE COMMUNICATIONS | 4869 | 7% | 0% | 59 |
6 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 4445 | 6% | 0% | 50 |
7 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 3690 | 5% | 0% | 45 |
8 | ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE | 1749 | 0% | 2% | 3 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1491 | 1% | 1% | 7 |
10 | UKRAINSKII FIZICHESKII ZHURNAL | 1085 | 1% | 0% | 10 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAP N | 108791 | 0% | 100% | 3 | Search GAP+N | Search GAP+N |
2 | ALGAINP STQW LASER | 36264 | 0% | 100% | 1 | Search ALGAINP+STQW+LASER | Search ALGAINP+STQW+LASER |
3 | CHANGED ISOTOPIC COMPOSITION | 36264 | 0% | 100% | 1 | Search CHANGED+ISOTOPIC+COMPOSITION | Search CHANGED+ISOTOPIC+COMPOSITION |
4 | DEFECT DROPS | 36264 | 0% | 100% | 1 | Search DEFECT+DROPS | Search DEFECT+DROPS |
5 | GAAS N | 36264 | 0% | 100% | 1 | Search GAAS+N | Search GAAS+N |
6 | ISOELECTRIC IMPURITY | 36264 | 0% | 100% | 1 | Search ISOELECTRIC+IMPURITY | Search ISOELECTRIC+IMPURITY |
7 | LASER OPERATION INDUCED MIGRATION | 36264 | 0% | 100% | 1 | Search LASER+OPERATION+INDUCED+MIGRATION | Search LASER+OPERATION+INDUCED+MIGRATION |
8 | MSX ALPHA CALCULATION | 36264 | 0% | 100% | 1 | Search MSX+ALPHA+CALCULATION | Search MSX+ALPHA+CALCULATION |
9 | PICOSECOND TIMING RESOLUTION | 36264 | 0% | 100% | 1 | Search PICOSECOND+TIMING+RESOLUTION | Search PICOSECOND+TIMING+RESOLUTION |
10 | RADIATIVE AND NON RADIATIVE RECOMBINATION | 36264 | 0% | 100% | 1 | Search RADIATIVE+AND+NON+RADIATIVE+RECOMBINATION | Search RADIATIVE+AND+NON+RADIATIVE+RECOMBINATION |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | MYLES, CW , LI, WG , (2000) DEEP LEVELS INCLUDING LATTICE RELAXATION: FIRST- AND SECOND-NEIGHBOR EFFECTS.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS. VOL. 61. ISSUE 11. P. 1855 -1864 | 35 | 71% | 1 |
2 | LI, WG , MYLES, CW , (1991) EFFECTS OF LATTICE-RELAXATION ON DEEP LEVELS IN SEMICONDUCTORS.PHYSICAL REVIEW B. VOL. 43. ISSUE 3. P. 2192-2200 | 30 | 88% | 9 |
3 | FORD, WC , MYLES, CW , LICHTI, RL , (1988) THEORY OF ALLOY BROADENING OF DEEP LEVELS IN SEMICONDUCTOR ALLOYS - EFFECTS OF 2ND-NEIGHBOR DISORDER.PHYSICAL REVIEW B. VOL. 38. ISSUE 15. P. 10533-10541 | 37 | 82% | 1 |
4 | LI, WG , MYLES, CW , (1991) MOLECULAR-DYNAMICS APPROACH TO LATTICE-RELAXATION EFFECTS ON DEEP LEVELS IN SEMICONDUCTORS.PHYSICAL REVIEW B. VOL. 43. ISSUE 12. P. 9947 -9950 | 24 | 89% | 5 |
5 | BYLANDER, EG , MYLES, CW , SHEN, YT , (1990) DEFECT IDENTIFICATION IN SEMICONDUCTOR ALLOYS USING DEEP LEVEL COMPOSITION DEPENDENCE .2. APPLICATION TO GAAS1-XPX.JOURNAL OF APPLIED PHYSICS. VOL. 67. ISSUE 12. P. 7351-7358 | 25 | 89% | 3 |
6 | TANG, SA , MYLES, CW , FORD, WC , (1989) EFFECT OF ALLOY DISORDER ON THE DEEP LEVELS PRODUCED BY THE ANION VACANCY IN GAAS1-XPX.PHYSICAL REVIEW B. VOL. 40. ISSUE 17. P. 11947-11950 | 22 | 96% | 0 |
7 | LI, WG , MYLES, CW , (1993) DEEP-LEVEL WAVE-FUNCTIONS INCLUDING LATTICE-RELAXATION EFFECTS.PHYSICAL REVIEW B. VOL. 47. ISSUE 8. P. 4281-4289 | 22 | 73% | 5 |
8 | FORD, WC , MYLES, CW , (1988) ALLOY BROADENING OF THE DEEP ELECTRONIC LEVELS ASSOCIATED WITH THE AS VACANCY IN ALXGA1-XAS.PHYSICAL REVIEW B. VOL. 38. ISSUE 2. P. 1210-1214 | 22 | 92% | 8 |
9 | XU, HQ , (1990) ELECTRONIC-STRUCTURE OF NEUTRAL AND CHARGED VACANCIES IN GA-RELATED III-V COMPOUND SEMICONDUCTORS.JOURNAL OF APPLIED PHYSICS. VOL. 68. ISSUE 8. P. 4077 -4086 | 18 | 90% | 21 |
10 | SHEN, YT , MYLES, CW , (1989) CHEMICAL TRENDS FOR DEEP LEVELS ASSOCIATED WITH VACANCY-IMPURITY COMPLEXES IN SEMICONDUCTORS.PHYSICAL REVIEW B. VOL. 40. ISSUE 9. P. 6222-6235 | 21 | 81% | 0 |
Classes with closest relation at Level 1 |