Class information for:
Level 1: GAP N//ALGAINP STQW LASER//CENTROTECH

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
13364 842 23.0 34%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
2384 2             IR LASERS//OPT SENSORS SPECT//SOVIET PHYSICS SEMICONDUCTORS-USSR 4257
13364 1                   GAP N//ALGAINP STQW LASER//CENTROTECH 842

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 GAP N authKW 108791 0% 100% 3
2 ALGAINP STQW LASER authKW 36264 0% 100% 1
3 CENTROTECH address 36264 0% 100% 1
4 CHANGED ISOTOPIC COMPOSITION authKW 36264 0% 100% 1
5 DEFECT DROPS authKW 36264 0% 100% 1
6 ECOL NORMALE SUPER PHYS SOLIDES GRP address 36264 0% 100% 1
7 GAAS N authKW 36264 0% 100% 1
8 ISOELECTRIC IMPURITY authKW 36264 0% 100% 1
9 LASER OPERATION INDUCED MIGRATION authKW 36264 0% 100% 1
10 MET PHYS URA 131 CNRS address 36264 0% 100% 1

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Physics, Condensed Matter 12548 63% 0% 532
2 Physics, Multidisciplinary 1018 17% 0% 145
3 Physics, Applied 626 20% 0% 167
4 Materials Science, Multidisciplinary 105 11% 0% 95
5 Mathematics, Interdisciplinary Applications 23 2% 0% 14
6 COMPUTER APPLICATIONS & CYBERNETICS 12 0% 0% 1
7 Optics 5 3% 0% 22
8 Crystallography 2 1% 0% 9
9 Materials Science, Coatings & Films 1 1% 0% 6
10 Physics, Fluids & Plasmas 0 1% 0% 6

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 CENTROTECH 36264 0% 100% 1
2 ECOL NORMALE SUPER PHYS SOLIDES GRP 36264 0% 100% 1
3 MET PHYS URA 131 CNRS 36264 0% 100% 1
4 PHYS ELE HPT 36264 0% 100% 1
5 SETU 36264 0% 100% 1
6 ECOLE SUPER PHYS SOLIDES GRP 18131 0% 50% 1
7 MICROPROCESSOR COMP 9319 0% 9% 3
8 MICROPROC COMP 5575 0% 8% 2
9 HIGH VOLTAGE EQUIPMENT 4531 0% 13% 1
10 CIENCIAS FIS FIS MAT 4028 0% 11% 1

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 SOVIET PHYSICS SEMICONDUCTORS-USSR 11422 5% 1% 42
2 PHYSICA B & C 10597 4% 1% 34
3 PHYSICAL REVIEW B 9688 25% 0% 211
4 JOURNAL OF PHYSICS C-SOLID STATE PHYSICS 5296 3% 1% 27
5 SOLID STATE COMMUNICATIONS 4869 7% 0% 59
6 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 4445 6% 0% 50
7 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 3690 5% 0% 45
8 ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE 1749 0% 2% 3
9 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 1491 1% 1% 7
10 UKRAINSKII FIZICHESKII ZHURNAL 1085 1% 0% 10

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 GAP N 108791 0% 100% 3 Search GAP+N Search GAP+N
2 ALGAINP STQW LASER 36264 0% 100% 1 Search ALGAINP+STQW+LASER Search ALGAINP+STQW+LASER
3 CHANGED ISOTOPIC COMPOSITION 36264 0% 100% 1 Search CHANGED+ISOTOPIC+COMPOSITION Search CHANGED+ISOTOPIC+COMPOSITION
4 DEFECT DROPS 36264 0% 100% 1 Search DEFECT+DROPS Search DEFECT+DROPS
5 GAAS N 36264 0% 100% 1 Search GAAS+N Search GAAS+N
6 ISOELECTRIC IMPURITY 36264 0% 100% 1 Search ISOELECTRIC+IMPURITY Search ISOELECTRIC+IMPURITY
7 LASER OPERATION INDUCED MIGRATION 36264 0% 100% 1 Search LASER+OPERATION+INDUCED+MIGRATION Search LASER+OPERATION+INDUCED+MIGRATION
8 MSX ALPHA CALCULATION 36264 0% 100% 1 Search MSX+ALPHA+CALCULATION Search MSX+ALPHA+CALCULATION
9 PICOSECOND TIMING RESOLUTION 36264 0% 100% 1 Search PICOSECOND+TIMING+RESOLUTION Search PICOSECOND+TIMING+RESOLUTION
10 RADIATIVE AND NON RADIATIVE RECOMBINATION 36264 0% 100% 1 Search RADIATIVE+AND+NON+RADIATIVE+RECOMBINATION Search RADIATIVE+AND+NON+RADIATIVE+RECOMBINATION

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 MYLES, CW , LI, WG , (2000) DEEP LEVELS INCLUDING LATTICE RELAXATION: FIRST- AND SECOND-NEIGHBOR EFFECTS.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS. VOL. 61. ISSUE 11. P. 1855 -1864 35 71% 1
2 LI, WG , MYLES, CW , (1991) EFFECTS OF LATTICE-RELAXATION ON DEEP LEVELS IN SEMICONDUCTORS.PHYSICAL REVIEW B. VOL. 43. ISSUE 3. P. 2192-2200 30 88% 9
3 FORD, WC , MYLES, CW , LICHTI, RL , (1988) THEORY OF ALLOY BROADENING OF DEEP LEVELS IN SEMICONDUCTOR ALLOYS - EFFECTS OF 2ND-NEIGHBOR DISORDER.PHYSICAL REVIEW B. VOL. 38. ISSUE 15. P. 10533-10541 37 82% 1
4 LI, WG , MYLES, CW , (1991) MOLECULAR-DYNAMICS APPROACH TO LATTICE-RELAXATION EFFECTS ON DEEP LEVELS IN SEMICONDUCTORS.PHYSICAL REVIEW B. VOL. 43. ISSUE 12. P. 9947 -9950 24 89% 5
5 BYLANDER, EG , MYLES, CW , SHEN, YT , (1990) DEFECT IDENTIFICATION IN SEMICONDUCTOR ALLOYS USING DEEP LEVEL COMPOSITION DEPENDENCE .2. APPLICATION TO GAAS1-XPX.JOURNAL OF APPLIED PHYSICS. VOL. 67. ISSUE 12. P. 7351-7358 25 89% 3
6 TANG, SA , MYLES, CW , FORD, WC , (1989) EFFECT OF ALLOY DISORDER ON THE DEEP LEVELS PRODUCED BY THE ANION VACANCY IN GAAS1-XPX.PHYSICAL REVIEW B. VOL. 40. ISSUE 17. P. 11947-11950 22 96% 0
7 LI, WG , MYLES, CW , (1993) DEEP-LEVEL WAVE-FUNCTIONS INCLUDING LATTICE-RELAXATION EFFECTS.PHYSICAL REVIEW B. VOL. 47. ISSUE 8. P. 4281-4289 22 73% 5
8 FORD, WC , MYLES, CW , (1988) ALLOY BROADENING OF THE DEEP ELECTRONIC LEVELS ASSOCIATED WITH THE AS VACANCY IN ALXGA1-XAS.PHYSICAL REVIEW B. VOL. 38. ISSUE 2. P. 1210-1214 22 92% 8
9 XU, HQ , (1990) ELECTRONIC-STRUCTURE OF NEUTRAL AND CHARGED VACANCIES IN GA-RELATED III-V COMPOUND SEMICONDUCTORS.JOURNAL OF APPLIED PHYSICS. VOL. 68. ISSUE 8. P. 4077 -4086 18 90% 21
10 SHEN, YT , MYLES, CW , (1989) CHEMICAL TRENDS FOR DEEP LEVELS ASSOCIATED WITH VACANCY-IMPURITY COMPLEXES IN SEMICONDUCTORS.PHYSICAL REVIEW B. VOL. 40. ISSUE 9. P. 6222-6235 21 81% 0

Classes with closest relation at Level 1



Rank Class id link
1 24088 SPE OPHOTOMETRY//BLACK SILICON//SILICON SURFACE MICROSTRUCTURE
2 36218 TIGHT BINDING THEORY//ALLOWED WAVEVECTORS//BRILLOUIN ZONE UNFOLDING
3 26589 D LATTICE DYNAMICS//EDNR ELECTRICALLY DETECTED MAGNETIC RESONANCE//GAALNP
4 11533 INFORMAT MAITRISE SCI PHYS//TECHNOL GUYANE//D5 IONS
5 28095 GAAS1 XGE2X//ASYMMETRIC BANDGAP BOWING//FERROQUADRUPOLAR PHASE
6 34087 ALXGA1 XP//VAPOR PRESSURE CONTROL//SURFACE AND INTERFACE PHENOMENA
7 13739 BGAAS//MAT PHYS ITS PLICAT//BORON PHOSPHIDE
8 25556 MAGNET SENSOR//RADIATION RESISTANT HALL SENSORS//OBNINSK BRANCH
9 7474 DX CENTERS//DX CENTRES//PERSISTENT PHOTOEFFECTS
10 1145 EL2//GAAS//SEMI INSULATING GAAS

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