Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
6381 | 1491 | 17.3 | 55% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
579 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC | 14235 |
6381 | 1 | OHMIC CONTACT//PD GE//SOLID PHASE REGROWTH | 1491 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | OHMIC CONTACT | authKW | 234746 | 7% | 11% | 105 |
2 | PD GE | authKW | 85324 | 0% | 83% | 5 |
3 | SOLID PHASE REGROWTH | authKW | 81908 | 0% | 67% | 6 |
4 | N TYPE GAAS | authKW | 73716 | 0% | 60% | 6 |
5 | PD SI | authKW | 54606 | 0% | 67% | 4 |
6 | AU MO TI GE PD METALLIZATION | authKW | 40956 | 0% | 100% | 2 |
7 | PD BASED CONTACTS | authKW | 40956 | 0% | 100% | 2 |
8 | PDGE | authKW | 40956 | 0% | 100% | 2 |
9 | INXGA1 XAS | authKW | 23028 | 0% | 19% | 6 |
10 | N GAAS | authKW | 22330 | 0% | 18% | 6 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 16769 | 67% | 0% | 997 |
2 | Materials Science, Coatings & Films | 4575 | 13% | 0% | 193 |
3 | Engineering, Electrical & Electronic | 3861 | 31% | 0% | 462 |
4 | Physics, Condensed Matter | 3776 | 27% | 0% | 410 |
5 | Materials Science, Multidisciplinary | 1385 | 24% | 0% | 353 |
6 | Nanoscience & Nanotechnology | 428 | 7% | 0% | 99 |
7 | Electrochemistry | 111 | 3% | 0% | 44 |
8 | Physics, Multidisciplinary | 91 | 5% | 0% | 80 |
9 | Microscopy | 61 | 1% | 0% | 12 |
10 | Metallurgy & Metallurgical Engineering | 43 | 3% | 0% | 42 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | OURCE IL SUBMICRON STRUCT | 21837 | 0% | 27% | 4 |
2 | BRANCH SCI TECH BELMICROSYST | 20478 | 0% | 100% | 1 |
3 | CNS RPT | 20478 | 0% | 100% | 1 |
4 | CST SPS | 20478 | 0% | 100% | 1 |
5 | DEUT BUNDESPOST FOR UNGS | 20478 | 0% | 100% | 1 |
6 | E FISHKILL PROD ASSURANCE | 20478 | 0% | 100% | 1 |
7 | ELECT ENGN ELECT MAT | 20478 | 0% | 100% | 1 |
8 | ELECT ENGN MICROELE S | 20478 | 0% | 100% | 1 |
9 | HOCHSTFREQUENZTECH | 20478 | 0% | 100% | 1 |
10 | MICROELECT FEI | 20478 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID-STATE ELECTRONICS | 17887 | 6% | 1% | 93 |
2 | JOURNAL OF APPLIED PHYSICS | 9435 | 15% | 0% | 223 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 6644 | 5% | 0% | 74 |
4 | JOURNAL OF ELECTRONIC MATERIALS | 6535 | 4% | 1% | 56 |
5 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 4377 | 3% | 0% | 46 |
6 | APPLIED PHYSICS LETTERS | 3802 | 10% | 0% | 146 |
7 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 3754 | 2% | 1% | 37 |
8 | THIN SOLID FILMS | 3075 | 5% | 0% | 75 |
9 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2583 | 2% | 0% | 32 |
10 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988 | 3% | 0% | 39 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | OHMIC CONTACT | 234746 | 7% | 11% | 105 | Search OHMIC+CONTACT | Search OHMIC+CONTACT |
2 | PD GE | 85324 | 0% | 83% | 5 | Search PD+GE | Search PD+GE |
3 | SOLID PHASE REGROWTH | 81908 | 0% | 67% | 6 | Search SOLID+PHASE+REGROWTH | Search SOLID+PHASE+REGROWTH |
4 | N TYPE GAAS | 73716 | 0% | 60% | 6 | Search N+TYPE+GAAS | Search N+TYPE+GAAS |
5 | PD SI | 54606 | 0% | 67% | 4 | Search PD+SI | Search PD+SI |
6 | AU MO TI GE PD METALLIZATION | 40956 | 0% | 100% | 2 | Search AU+MO+TI+GE+PD+METALLIZATION | Search AU+MO+TI+GE+PD+METALLIZATION |
7 | PD BASED CONTACTS | 40956 | 0% | 100% | 2 | Search PD+BASED+CONTACTS | Search PD+BASED+CONTACTS |
8 | PDGE | 40956 | 0% | 100% | 2 | Search PDGE | Search PDGE |
9 | INXGA1 XAS | 23028 | 0% | 19% | 6 | Search INXGA1+XAS | Search INXGA1+XAS |
10 | N GAAS | 22330 | 0% | 18% | 6 | Search N+GAAS | Search N+GAAS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SHEN, TC , GAO, GB , MORKOC, H , (1992) RECENT DEVELOPMENTS IN OHMIC CONTACTS FOR III-V COMPOUND SEMICONDUCTORS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 10. ISSUE 5. P. 2113-2132 | 115 | 84% | 139 |
2 | IVEY, DG , JIAN, P , (1995) METALLURGY OF OHMIC CONTACTS TO INP.CANADIAN METALLURGICAL QUARTERLY. VOL. 34. ISSUE 2. P. 85-113 | 81 | 91% | 7 |
3 | BLANK, TV , GOL'DBERG, YA , (2007) MECHANISMS OF CURRENT FLOW IN METAL-SEMICONDUCTOR OHMIC CONTACTS.SEMICONDUCTORS. VOL. 41. ISSUE 11. P. 1263 -1292 | 106 | 38% | 71 |
4 | KIM, TJ , HOLLOWAY, PH , (1997) OHMIC CONTACTS TO GAAS EPITAXIAL LAYERS.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 22. ISSUE 3. P. 239 -273 | 70 | 76% | 15 |
5 | MURAKAMI, M , (2002) DEVELOPMENT OF REFRACTORY OHMIC CONTACT MATERIALS FOR GALLIUM ARSENIDE COMPOUND SEMICONDUCTORS.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS. VOL. 3. ISSUE 1. P. 1 -27 | 53 | 80% | 38 |
6 | BACA, AG , REN, F , ZOLPER, JC , BRIGGS, RD , PEARTON, SJ , (1997) A SURVEY OF OHMIC CONTACTS TO III-V COMPOUND SEMICONDUCTORS.THIN SOLID FILMS. VOL. 308. ISSUE . P. 599-606 | 46 | 75% | 112 |
7 | KOOP, EJ , IQBAL, MJ , LIMBACH, F , BOUTE, M , VAN WEES, BJ , REUTER, D , WIECK, AD , KOOI, BJ , VAN DER WAL, CH , (2013) ON THE ANNEALING MECHANISM OF AUGE/NI/AU OHMIC CONTACTS TO A TWO-DIMENSIONAL ELECTRON GAS IN GAAS/ALXGA1-XAS HETEROSTRUCTURES.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 28. ISSUE 2. P. - | 25 | 96% | 1 |
8 | SANDS, T , (1988) COMPOUND SEMICONDUCTOR CONTACT METALLURGY.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 1. ISSUE 3-4. P. 289-312 | 66 | 75% | 3 |
9 | BARASKAR, A , GOSSARD, AC , RODWELL, MJW , (2013) LOWER LIMITS TO METAL-SEMICONDUCTOR CONTACT RESISTANCE: THEORETICAL MODELS AND EXPERIMENTAL DATA.JOURNAL OF APPLIED PHYSICS. VOL. 114. ISSUE 15. P. - | 29 | 66% | 5 |
10 | GOLDBERG, YA , (1994) OHMIC METAL III-V-SEMICONDUCTOR CONTACTS - FABRICATION METHODS AND PROPERTIES (REVIEW).SEMICONDUCTORS. VOL. 28. ISSUE 10. P. 935-943 | 39 | 81% | 11 |
Classes with closest relation at Level 1 |