Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
16292 | 662 | 20.4 | 50% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
715 | 3 | BETA DIKETONATE//DIMETHYLALUMINUM HYDRIDE//CHEMICAL VAPOR DEPOSITION | 5470 |
2014 | 2 | BETA DIKETONATE//DIMETHYLALUMINUM HYDRIDE//CHEMICAL VAPOR DEPOSITION | 5470 |
16292 | 1 | CVD W//TUNGSTEN THIN FILMS//CVD IRON | 662 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | CVD W | authKW | 205459 | 1% | 64% | 7 |
2 | TUNGSTEN THIN FILMS | authKW | 138374 | 0% | 100% | 3 |
3 | CVD IRON | authKW | 92249 | 0% | 100% | 2 |
4 | BLANKET TUNGSTEN | authKW | 61498 | 0% | 67% | 2 |
5 | SINGLE WAFER REACTOR | authKW | 61498 | 0% | 67% | 2 |
6 | A15 BETA W THIN FILMS | authKW | 46125 | 0% | 100% | 1 |
7 | A15 CRYSTAL STRUCTURE | authKW | 46125 | 0% | 100% | 1 |
8 | ABT MA INENBAU HBEREICH INGN WISSEN | address | 46125 | 0% | 100% | 1 |
9 | ALD W | authKW | 46125 | 0% | 100% | 1 |
10 | ALLGEMEINE ELEKTROTECH QUANTENELEKT | address | 46125 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 23090 | 42% | 0% | 281 |
2 | Physics, Applied | 6462 | 63% | 0% | 414 |
3 | Physics, Condensed Matter | 2015 | 30% | 0% | 198 |
4 | Electrochemistry | 1716 | 14% | 0% | 93 |
5 | Materials Science, Multidisciplinary | 812 | 27% | 0% | 176 |
6 | Engineering, Electrical & Electronic | 297 | 15% | 0% | 97 |
7 | Nanoscience & Nanotechnology | 180 | 6% | 0% | 43 |
8 | Chemistry, Physical | 135 | 13% | 0% | 83 |
9 | Metallurgy & Metallurgical Engineering | 41 | 4% | 0% | 24 |
10 | Engineering, Manufacturing | 8 | 1% | 0% | 6 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ABT MA INENBAU HBEREICH INGN WISSEN | 46125 | 0% | 100% | 1 |
2 | ALLGEMEINE ELEKTROTECH QUANTENELEKT | 46125 | 0% | 100% | 1 |
3 | AUSTRALIAN KEY MICROSCOPY MICROANAAL | 46125 | 0% | 100% | 1 |
4 | CHEM REACTOR TECHNOL | 46125 | 0% | 100% | 1 |
5 | CNRSURA 0022 | 46125 | 0% | 100% | 1 |
6 | CNS TCS | 46125 | 0% | 100% | 1 |
7 | CRTTCNRS | 46125 | 0% | 100% | 1 |
8 | GEN PHYS LASERSPECT | 46125 | 0% | 100% | 1 |
9 | GG DEVYATYKH HIGH PUR SUBST | 46125 | 0% | 100% | 1 |
10 | GRUPO MAT ENGN SUPERF | 46125 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 11599 | 13% | 0% | 87 |
2 | THIN SOLID FILMS | 6547 | 11% | 0% | 72 |
3 | APPLIED SURFACE SCIENCE | 5852 | 10% | 0% | 67 |
4 | SOLID STATE TECHNOLOGY | 4859 | 2% | 1% | 14 |
5 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 4663 | 6% | 0% | 38 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1836 | 4% | 0% | 26 |
7 | VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1526 | 1% | 1% | 4 |
8 | JOURNAL OF THE INSTITUTE OF ENVIRONMENTAL SCIENCES | 1439 | 0% | 3% | 1 |
9 | CHEMICAL VAPOR DEPOSITION | 1150 | 1% | 1% | 5 |
10 | CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 866 | 0% | 1% | 2 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | CVD W | 205459 | 1% | 64% | 7 | Search CVD+W | Search CVD+W |
2 | TUNGSTEN THIN FILMS | 138374 | 0% | 100% | 3 | Search TUNGSTEN+THIN+FILMS | Search TUNGSTEN+THIN+FILMS |
3 | CVD IRON | 92249 | 0% | 100% | 2 | Search CVD+IRON | Search CVD+IRON |
4 | BLANKET TUNGSTEN | 61498 | 0% | 67% | 2 | Search BLANKET+TUNGSTEN | Search BLANKET+TUNGSTEN |
5 | SINGLE WAFER REACTOR | 61498 | 0% | 67% | 2 | Search SINGLE+WAFER+REACTOR | Search SINGLE+WAFER+REACTOR |
6 | A15 BETA W THIN FILMS | 46125 | 0% | 100% | 1 | Search A15+BETA+W+THIN+FILMS | Search A15+BETA+W+THIN+FILMS |
7 | A15 CRYSTAL STRUCTURE | 46125 | 0% | 100% | 1 | Search A15+CRYSTAL+STRUCTURE | Search A15+CRYSTAL+STRUCTURE |
8 | ALD W | 46125 | 0% | 100% | 1 | Search ALD+W | Search ALD+W |
9 | AMORPHOUS LIKE TUNGSTEN SILICIDE | 46125 | 0% | 100% | 1 | Search AMORPHOUS+LIKE+TUNGSTEN+SILICIDE | Search AMORPHOUS+LIKE+TUNGSTEN+SILICIDE |
10 | ARGON CAPTURING ENERGY | 46125 | 0% | 100% | 1 | Search ARGON+CAPTURING+ENERGY | Search ARGON+CAPTURING+ENERGY |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CREIGHTON, JR , PARMETER, JE , (1993) METAL CVD FOR MICROELECTRONIC APPLICATIONS - AN EXAMINATION OF SURFACE-CHEMISTRY AND KINETICS.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 18. ISSUE 2. P. 175 -238 | 51 | 41% | 61 |
2 | KIM, SH , HWANG, ES , HA, SC , PYI, SH , SUN, HJ , LEE, JW , KAWK, N , KIM, JK , SOHN, H , KIM, J , (2005) CHARACTERIZATIONS OF PULSED CHEMICAL VAPOR DEPOSITED-TUNGSTEN THIN FILMS FOR ULTRAHIGH ASPECT RATIO W-PLUG PROCESS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 152. ISSUE 6. P. C408-C417 | 20 | 74% | 13 |
3 | CHOI, HS , RHEE, SW , (1994) EFFECT OF CARRIER GASES ON THE CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN FROM WF6-SIH4.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 141. ISSUE 2. P. 475-479 | 21 | 100% | 3 |
4 | KUIJLAARS, KJ , KLEIJN, CR , VAN DEN AKKER, HEA , (1998) SIMULATION OF SELECTIVE TUNGSTEN CHEMICAL VAPOUR DEPOSITION.SOLID-STATE ELECTRONICS. VOL. 42. ISSUE 5. P. A43-A54 | 20 | 87% | 6 |
5 | BOZACK, MJ , (1992) REACTION OF TUNGSTEN HEXAFLUORIDE WITH SI AND TIN SURFACES.THIN SOLID FILMS. VOL. 221. ISSUE 1-2. P. 55-60 | 22 | 100% | 1 |
6 | CHANG, IS , HON, MH , (1998) GROWTH CHARACTERISTICS AND ELECTRICAL RESISTIVITY OF CHEMICAL VAPOR-DEPOSITED TUNGSTEN FILM.THIN SOLID FILMS. VOL. 333. ISSUE 1-2. P. 108-113 | 16 | 100% | 5 |
7 | HSIEH, CT , TING, JM , (2007) EFFECT OF GROWTH CONDITIONS ON THE STRUCTURE AND PROPERTIES OF TUNGSTEN FILMS PREPARED USING A THERMAL EVAPORATION PROCESS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 25. ISSUE 6. P. 1552-1556 | 18 | 67% | 4 |
8 | SLUITER, MHF , (2009) INTERSTITIALS IN TETRAHEDRALLY CLOSE-PACKED PHASES: C, N, O, AND F IN BETA-TUNGSTEN FROM FIRST PRINCIPLES.PHYSICAL REVIEW B. VOL. 80. ISSUE 22. P. - | 18 | 60% | 7 |
9 | BELKACEM, A , ARNAL, Y , PELLETIER, J , ANDRE, E , OBERLIN, JC , (1994) PREPARATION OF LOW-RESISTIVITY TUNGSTEN THIN-FILMS DEPOSITED BY MICROWAVE-PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM THE TUNGSTEN HEXAFLUORIDE HYDROGEN SYSTEM.THIN SOLID FILMS. VOL. 241. ISSUE 1-2. P. 301-304 | 18 | 90% | 0 |
10 | DEEPAK , GAUR, A , (2001) ROLE OF TEMPERATURE GRADIENTS IN BLANKET TUNGSTEN FOR MICROELECTRONIC CONTACTS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 16. ISSUE 8. P. 665 -675 | 16 | 76% | 0 |
Classes with closest relation at Level 1 |