Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
3226 | 2033 | 18.4 | 56% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
746 | 2 | BETA FESI2//SILICIDES//SERIES RESISTANCE | 12475 |
3226 | 1 | TISI2//TITANIUM SILICIDE//SALICIDE | 2033 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | TISI2 | authKW | 522140 | 3% | 63% | 55 |
2 | TITANIUM SILICIDE | authKW | 220207 | 2% | 33% | 44 |
3 | SALICIDE | authKW | 103547 | 1% | 34% | 20 |
4 | C54 | authKW | 81762 | 0% | 78% | 7 |
5 | SELF ALIGNED SILICIDE | authKW | 80091 | 0% | 67% | 8 |
6 | SILICIDES | authKW | 61520 | 4% | 6% | 73 |
7 | ELE NANO DEVICE | address | 60072 | 0% | 100% | 4 |
8 | INTERFACIAL SOLID PHASE REACTION | authKW | 60072 | 0% | 100% | 4 |
9 | ZR SILICIDE | authKW | 45054 | 0% | 100% | 3 |
10 | TITANIUM DISILICIDE | authKW | 38435 | 0% | 32% | 8 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 23105 | 24% | 0% | 497 |
2 | Physics, Applied | 23099 | 67% | 0% | 1366 |
3 | Physics, Condensed Matter | 3470 | 23% | 0% | 468 |
4 | Engineering, Electrical & Electronic | 2447 | 22% | 0% | 449 |
5 | Materials Science, Multidisciplinary | 1629 | 22% | 0% | 453 |
6 | Electrochemistry | 1502 | 8% | 0% | 159 |
7 | Nanoscience & Nanotechnology | 908 | 8% | 0% | 163 |
8 | Nuclear Science & Technology | 70 | 3% | 0% | 51 |
9 | Instruments & Instrumentation | 68 | 3% | 0% | 55 |
10 | Chemistry, Physical | 54 | 7% | 0% | 141 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ELE NANO DEVICE | 60072 | 0% | 100% | 4 |
2 | LSI PROD | 22524 | 0% | 50% | 3 |
3 | IMETEM | 18437 | 1% | 8% | 15 |
4 | CHEM TECHNOL ELE | 15018 | 0% | 100% | 1 |
5 | CIENCIAS FIS LICADA CXII | 15018 | 0% | 100% | 1 |
6 | CLEANING PROC DEV | 15018 | 0% | 100% | 1 |
7 | COMMUN CNET STMICROELECT | 15018 | 0% | 100% | 1 |
8 | CRYSTAL MICROSTRUCT GRP | 15018 | 0% | 100% | 1 |
9 | CSIC CIENCIA MAT B | 15018 | 0% | 100% | 1 |
10 | DELCO ELE | 15018 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF APPLIED PHYSICS | 14373 | 16% | 0% | 321 |
2 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 11551 | 8% | 1% | 153 |
3 | THIN SOLID FILMS | 10573 | 8% | 0% | 161 |
4 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 9630 | 5% | 1% | 104 |
5 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 5903 | 4% | 1% | 78 |
6 | APPLIED SURFACE SCIENCE | 4402 | 5% | 0% | 103 |
7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 3855 | 3% | 0% | 61 |
8 | IEEE ELECTRON DEVICE LETTERS | 3455 | 2% | 1% | 46 |
9 | APPLIED PHYSICS LETTERS | 2872 | 7% | 0% | 150 |
10 | VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 2511 | 0% | 2% | 9 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | TISI2 | 522140 | 3% | 63% | 55 | Search TISI2 | Search TISI2 |
2 | TITANIUM SILICIDE | 220207 | 2% | 33% | 44 | Search TITANIUM+SILICIDE | Search TITANIUM+SILICIDE |
3 | SALICIDE | 103547 | 1% | 34% | 20 | Search SALICIDE | Search SALICIDE |
4 | C54 | 81762 | 0% | 78% | 7 | Search C54 | Search C54 |
5 | SELF ALIGNED SILICIDE | 80091 | 0% | 67% | 8 | Search SELF+ALIGNED+SILICIDE | Search SELF+ALIGNED+SILICIDE |
6 | SILICIDES | 61520 | 4% | 6% | 73 | Search SILICIDES | Search SILICIDES |
7 | INTERFACIAL SOLID PHASE REACTION | 60072 | 0% | 100% | 4 | Search INTERFACIAL+SOLID+PHASE+REACTION | Search INTERFACIAL+SOLID+PHASE+REACTION |
8 | ZR SILICIDE | 45054 | 0% | 100% | 3 | Search ZR+SILICIDE | Search ZR+SILICIDE |
9 | TITANIUM DISILICIDE | 38435 | 0% | 32% | 8 | Search TITANIUM+DISILICIDE | Search TITANIUM+DISILICIDE |
10 | TI SILICIDE | 37540 | 0% | 50% | 5 | Search TI+SILICIDE | Search TI+SILICIDE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | MAEX, K , (1993) SILICIDES FOR INTEGRATED-CIRCUITS - TISI2 AND COSI2.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 11. ISSUE 2-3. P. 53 -153 | 95 | 63% | 278 |
2 | SAITO, T , OSHIMA, K , SHIMOGAKI, Y , EGASHIRA, Y , SUGAWARA, K , TAKAHIRO, K , NAGATA, S , YAMAGUCHI, S , KOMIYAMA, H , (2012) LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-RICH TUNGSTEN SILICIDE FILMS FROM TUNGSTEN HEXAFLUORIDE - DISILANE PRE-ACTIVATED MIXTURES.INTERNATIONAL JOURNAL OF CHEMICAL REACTOR ENGINEERING. VOL. 10. ISSUE . P. - | 29 | 76% | 0 |
3 | OZCAN, AS , LUDWIG, KF , LAVOIE, C , BASU, SN , COIA, C , CABRAL, C , RODBELL, KP , HARPER, JME , (2004) EVOLUTION OF MICROSTRUCTURE IN TI-TA BILAYER THIN FILMS ON POLYCRYSTALLINE-SI AND SI(001).THIN SOLID FILMS. VOL. 466. ISSUE 1-2. P. 238 -249 | 25 | 96% | 0 |
4 | ENGQVIST, J , JANSSON, U , LU, J , CARLSSON, JO , (1994) C49/C54 PHASE-TRANSFORMATION DURING CHEMICAL-VAPOR-DEPOSITION OF TISI2.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 12. ISSUE 1. P. 161 -168 | 35 | 95% | 13 |
5 | IRELAND, PJ , (1997) HIGH ASPECT RATIO CONTACTS: A REVIEW OF THE CURRENT TUNGSTEN PLUG PROCESS.THIN SOLID FILMS. VOL. 304. ISSUE 1-2. P. 1-12 | 60 | 47% | 39 |
6 | HARPER, JME , CABRAL, C , LAVOIE, C , (2000) MECHANISMS FOR ENHANCED FORMATION OF THE C54 PHASE OF TITANIUM SILICIDE ULTRA-LARGE-SCALE INTEGRATION CONTACTS.ANNUAL REVIEW OF MATERIALS SCIENCE. VOL. 30. ISSUE . P. 523 -543 | 28 | 88% | 20 |
7 | CHOW, TP , STECKL, AJ , (1983) REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 30. ISSUE 11. P. 1480 -1497 | 57 | 84% | 112 |
8 | KU, YH , LEE, SK , KWONG, DL , (1990) THE APPLICATION OF ION-BEAM MIXING, DOPED SILICIDE, AND RAPID THERMAL-PROCESSING TO SELF-ALIGNED SILICIDE TECHNOLOGY.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 137. ISSUE 2. P. 728-740 | 46 | 79% | 11 |
9 | CHAIX-PLUCHERY, O , CHENEVIER, B , MATKO, I , SENATEUR, JP , LA VIA, F , (2004) INVESTIGATIONS OF TRANSIENT PHASE FORMATION IN TI/SI THIN FILM REACTION.JOURNAL OF APPLIED PHYSICS. VOL. 96. ISSUE 1. P. 361-368 | 24 | 89% | 8 |
10 | MILOSAVLJEVIC, M , BIBIC, N , PERUSKO, D , JEYNES, C , BANGERT, U , (2000) THE EFFECTS OF IMPLANTED ARSENIC ON TI-SILICIDE FORMATION.SOLID STATE PHENOMENA. VOL. 71. ISSUE . P. 147 -171 | 33 | 73% | 1 |
Classes with closest relation at Level 1 |