Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
3427 | 1986 | 21.9 | 70% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
378 | 3 | SURFACE & COATINGS TECHNOLOGY//HIGH ENTROPY ALLOY//MATERIALS SCIENCE, COATINGS & FILMS | 32127 |
527 | 2 | SURFACE & COATINGS TECHNOLOGY//MATERIALS SCIENCE, COATINGS & FILMS//TITANIUM NITRIDE | 14964 |
3427 | 1 | DIFFUSION BARRIER//CU METALLIZATION//TANTALUM NITRIDE | 1986 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | DIFFUSION BARRIER | authKW | 1337447 | 13% | 33% | 265 |
2 | CU METALLIZATION | authKW | 683240 | 3% | 66% | 67 |
3 | TANTALUM NITRIDE | authKW | 577442 | 4% | 52% | 72 |
4 | TA SI N | authKW | 316249 | 1% | 86% | 24 |
5 | TUNGSTEN NITRIDE | authKW | 216927 | 2% | 38% | 37 |
6 | COPPER METALLIZATION | authKW | 205159 | 2% | 43% | 31 |
7 | CU DIFFUSION BARRIER | authKW | 192164 | 1% | 83% | 15 |
8 | SELF FORMING BARRIER | authKW | 153735 | 1% | 100% | 10 |
9 | TAN | authKW | 135727 | 2% | 24% | 37 |
10 | CU INTERCONNECTION | authKW | 129897 | 1% | 65% | 13 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 31642 | 29% | 0% | 573 |
2 | Physics, Applied | 20869 | 65% | 0% | 1286 |
3 | Materials Science, Multidisciplinary | 4614 | 35% | 0% | 696 |
4 | Physics, Condensed Matter | 2954 | 22% | 0% | 430 |
5 | Nanoscience & Nanotechnology | 2703 | 13% | 0% | 262 |
6 | Engineering, Electrical & Electronic | 1261 | 17% | 0% | 335 |
7 | Electrochemistry | 1223 | 7% | 0% | 143 |
8 | Metallurgy & Metallurgical Engineering | 523 | 6% | 0% | 126 |
9 | Optics | 158 | 5% | 0% | 103 |
10 | Chemistry, Physical | 114 | 8% | 0% | 167 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ADV PROC C ACITOR | 102484 | 1% | 67% | 10 |
2 | NEW YORK STATE ADV THIN FILM TECHNOL | 53800 | 0% | 50% | 7 |
3 | ACT MATRIX LIQUID CRYSTAL DISPLAY | 48039 | 0% | 63% | 5 |
4 | SEMICOND MICROSYST TECHN IHM | 46121 | 0% | 100% | 3 |
5 | INTEGRATED ELECT ELECT MFG ELECT MEDIA | 34934 | 0% | 45% | 5 |
6 | SEMICOND MICROSYST TECHNOL | 34914 | 1% | 15% | 15 |
7 | MET DEPOSIT PROD GRP | 34589 | 0% | 75% | 3 |
8 | FUDAN NOVELLUS INTERCONNECT | 30747 | 0% | 100% | 2 |
9 | NW SERV OFF | 30747 | 0% | 100% | 2 |
10 | SUBSTRATE ENGN | 30747 | 0% | 100% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | THIN SOLID FILMS | 16135 | 10% | 1% | 196 |
2 | MICROELECTRONIC ENGINEERING | 15345 | 5% | 1% | 101 |
3 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 9043 | 7% | 0% | 134 |
4 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 6097 | 4% | 0% | 82 |
5 | ELECTROCHEMICAL AND SOLID STATE LETTERS | 5409 | 2% | 1% | 39 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 5071 | 3% | 0% | 69 |
7 | SURFACE & COATINGS TECHNOLOGY | 4469 | 4% | 0% | 76 |
8 | JOURNAL OF ELECTRONIC MATERIALS | 3571 | 2% | 0% | 48 |
9 | APPLIED SURFACE SCIENCE | 3043 | 4% | 0% | 85 |
10 | JOURNAL OF APPLIED PHYSICS | 2851 | 7% | 0% | 145 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | DIFFUSION BARRIER | 1337447 | 13% | 33% | 265 | Search DIFFUSION+BARRIER | Search DIFFUSION+BARRIER |
2 | CU METALLIZATION | 683240 | 3% | 66% | 67 | Search CU+METALLIZATION | Search CU+METALLIZATION |
3 | TANTALUM NITRIDE | 577442 | 4% | 52% | 72 | Search TANTALUM+NITRIDE | Search TANTALUM+NITRIDE |
4 | TA SI N | 316249 | 1% | 86% | 24 | Search TA+SI+N | Search TA+SI+N |
5 | TUNGSTEN NITRIDE | 216927 | 2% | 38% | 37 | Search TUNGSTEN+NITRIDE | Search TUNGSTEN+NITRIDE |
6 | COPPER METALLIZATION | 205159 | 2% | 43% | 31 | Search COPPER+METALLIZATION | Search COPPER+METALLIZATION |
7 | CU DIFFUSION BARRIER | 192164 | 1% | 83% | 15 | Search CU+DIFFUSION+BARRIER | Search CU+DIFFUSION+BARRIER |
8 | SELF FORMING BARRIER | 153735 | 1% | 100% | 10 | Search SELF+FORMING+BARRIER | Search SELF+FORMING+BARRIER |
9 | TAN | 135727 | 2% | 24% | 37 | Search TAN | Search TAN |
10 | CU INTERCONNECTION | 129897 | 1% | 65% | 13 | Search CU+INTERCONNECTION | Search CU+INTERCONNECTION |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | MCCLAIN, KR , O'DONOHUE, C , KOLEY, A , BONSU, RO , ABBOUD, KA , REVELLI, JC , ANDERSON, TJ , MCELWEE-WHITE, L , (2014) TUNGSTEN NITRIDO COMPLEXES AS PRECURSORS FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF WNXCY FILMS AS DIFFUSION BARRIERS FOR CU METALLIZATION.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY. VOL. 136. ISSUE 4. P. 1650 -1662 | 49 | 62% | 7 |
2 | ARSHI, N , LU, JQ , JOO, YK , YOON, JH , KOO, BH , (2015) EFFECTS OF NITROGEN COMPOSITION ON THE RESISTIVITY OF REACTIVELY SPUTTERED TAN THIN FILMS.SURFACE AND INTERFACE ANALYSIS. VOL. 47. ISSUE 1. P. 154 -160 | 36 | 72% | 3 |
3 | HAN, JH , KIM, HY , LEE, SC , KIM, DH , PARK, BK , PARK, JS , JEON, DJ , CHUNG, TM , KIM, CG , (2016) GROWTH OF TANTALUM NITRIDE FILM AS A CU DIFFUSION BARRIER BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION FROM BIS((2-(DIMETHYLAMINO)ETHYL)(METHYL)AMIDO)METHYL(TERT-BUTYLIMIDO) TANTALUM COMPLEX.APPLIED SURFACE SCIENCE. VOL. 362. ISSUE . P. 176 -181 | 24 | 92% | 1 |
4 | TAKOUDIS, C , MAJUMDER, P , (2008) REACTIVELY SPUTTERED MO-V NITRIDE THIN FILMS AS TERNARY DIFFUSION BARRIERS FOR COPPER METALLIZATION.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 155. ISSUE 10. P. H703 -H706 | 30 | 94% | 5 |
5 | MCCLAIN, KR , O'DONOHUE, C , SHI, ZW , WALKER, AV , ABBOUD, KA , ANDERSON, T , MCELWEE-WHITE, L , (2012) SYNTHESIS OF WN(NME2)3 AS A PRECURSOR FOR THE DEPOSITION OF WNX NANOSPHERES.EUROPEAN JOURNAL OF INORGANIC CHEMISTRY. VOL. . ISSUE 29. P. 4579 -4584 | 38 | 66% | 3 |
6 | ISTRATOV, AA , FLINK, C , WEBER, ER , (2000) IMPACT OF THE UNIQUE PHYSICAL PROPERTIES OF COPPER IN SILICON ON CHARACTERIZATION OF COPPER DIFFUSION BARRIERS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 222. ISSUE 1. P. 261 -277 | 52 | 66% | 13 |
7 | LIN, CH , (2014) A NEW CU(GENX) ALLOY FILM FOR INDUSTRIAL APPLICATIONS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 11. P. - | 27 | 87% | 0 |
8 | KALOYEROS, AE , EISENBRAUN, E , (2000) ULTRATHIN DIFFUSION BARRIERS/LINERS FOR GIGASCALE COPPER METALLIZATION.ANNUAL REVIEW OF MATERIALS SCIENCE. VOL. 30. ISSUE . P. 363 -385 | 35 | 67% | 262 |
9 | DALILI, N , LIU, Q , IVEY, DG , (2013) THERMAL AND ELECTRICAL STABILITY OF TANX DIFFUSION BARRIERS FOR CU METALLIZATION.JOURNAL OF MATERIALS SCIENCE. VOL. 48. ISSUE 1. P. 489-501 | 28 | 78% | 4 |
10 | SU, YH , WU, SA , WU, CY , WANG, YL , LEE, WH , (2015) INVESTIGATION OF BARRIER PROPERTY OF COPPER MANGANESE ALLOY ON RUTHENIUM.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 15. ISSUE 1. P. 47 -53 | 24 | 89% | 0 |
Classes with closest relation at Level 1 |