Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
24432 | 312 | 18.7 | 57% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
715 | 3 | BETA DIKETONATE//DIMETHYLALUMINUM HYDRIDE//CHEMICAL VAPOR DEPOSITION | 5470 |
2014 | 2 | BETA DIKETONATE//DIMETHYLALUMINUM HYDRIDE//CHEMICAL VAPOR DEPOSITION | 5470 |
24432 | 1 | DIMETHYLALUMINUM HYDRIDE//DIMETHYLALUMINUMHYDRIDE DMAH//SELECTIVE AL CVD | 312 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | DIMETHYLALUMINUM HYDRIDE | authKW | 1223360 | 5% | 83% | 15 |
2 | DIMETHYLALUMINUMHYDRIDE DMAH | authKW | 391477 | 1% | 100% | 4 |
3 | SELECTIVE AL CVD | authKW | 293608 | 1% | 100% | 3 |
4 | ALUMINUM PLUG | authKW | 220204 | 1% | 75% | 3 |
5 | DMAH | authKW | 195738 | 1% | 100% | 2 |
6 | ELEMENTARY REACTION SIMULATION | authKW | 195738 | 1% | 100% | 2 |
7 | FULLY SELF ALIGNED METALLIZATION | authKW | 195738 | 1% | 100% | 2 |
8 | METHYLPYRROLIDINE ALANE | authKW | 195738 | 1% | 100% | 2 |
9 | PROC SEQUENCE INTEGRAT | address | 195738 | 1% | 100% | 2 |
10 | SELECTIVE ALUMINUM CHEMICAL VAPOR DEPOSITION | authKW | 195738 | 1% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 5429 | 30% | 0% | 94 |
2 | Physics, Applied | 3277 | 65% | 0% | 202 |
3 | Physics, Condensed Matter | 835 | 28% | 0% | 88 |
4 | Materials Science, Multidisciplinary | 282 | 23% | 0% | 73 |
5 | Chemistry, Physical | 131 | 16% | 0% | 51 |
6 | Engineering, Electrical & Electronic | 127 | 14% | 0% | 44 |
7 | Nanoscience & Nanotechnology | 127 | 8% | 0% | 24 |
8 | Electrochemistry | 117 | 6% | 0% | 18 |
9 | Crystallography | 28 | 3% | 0% | 10 |
10 | METALLURGY & MINING | 21 | 0% | 0% | 1 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | PROC SEQUENCE INTEGRAT | 195738 | 1% | 100% | 2 |
2 | CIRIMAT INPT | 130491 | 1% | 67% | 2 |
3 | AGCY IND SCI TECHNOL IND PROD | 97869 | 0% | 100% | 1 |
4 | DRAM DEV PROGRAM | 97869 | 0% | 100% | 1 |
5 | ELECT ELE ENGN TENPA KU | 97869 | 0% | 100% | 1 |
6 | ENCIACET | 97869 | 0% | 100% | 1 |
7 | MET DEPOSIT PROD BUSINESS GRP | 97869 | 0% | 100% | 1 |
8 | PROC ENGN INTERCONNECT | 97869 | 0% | 100% | 1 |
9 | SECT MICROELECT | 97869 | 0% | 100% | 1 |
10 | SEMICOND PLANT REGENSBURG | 97869 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | THIN SOLID FILMS | 2740 | 10% | 0% | 32 |
2 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2641 | 9% | 0% | 29 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2476 | 6% | 0% | 19 |
4 | APPLIED SURFACE SCIENCE | 1582 | 8% | 0% | 24 |
5 | OPTOELECTRONICS-DEVICES AND TECHNOLOGIES | 1062 | 0% | 1% | 1 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 976 | 4% | 0% | 13 |
7 | KOREAN JOURNAL OF CHEMICAL ENGINEERING | 971 | 2% | 0% | 7 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 801 | 3% | 0% | 10 |
9 | MICROELECTRONIC ENGINEERING | 768 | 3% | 0% | 9 |
10 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 713 | 5% | 0% | 15 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | WILLIS, BG , JENSEN, KF , (2001) DISPROPORTIONATION OF DIMETHYLALANE ON ALUMINUM SURFACES. PART 1. EXPERIMENTAL STUDIES.SURFACE SCIENCE. VOL. 488. ISSUE 3. P. 286 -302 | 30 | 75% | 4 |
2 | KIM, DH , KIM, BY , (2001) MORPHOLOGY AND HOLE FILLING PROPERTIES OF CHEMICALLY VAPOR DEPOSITED ALUMINUM FILMS PREPARED FROM DIMETHYLETHYLAMINE ALANE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 148. ISSUE 1. P. C10 -C15 | 18 | 90% | 4 |
3 | AHN, SD , LEE, HB , KANG, SW , (2000) SURFACE MORPHOLOGY IMPROVEMENT OF METALORGANIC CHEMICAL VAPOR DEPOSITION AL FILMS BY LAYERED DEPOSITION OF AL AND ULTRATHIN TIN.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 39. ISSUE 6A. P. 3349-3354 | 18 | 86% | 3 |
4 | KIM, DH , KIM, BY , (2000) CHARACTERISTICS OF ALUMINUM FILMS PREPARED BY METALORGANIC CHEMICAL VAPOR DEPOSITION USING DIMETHYLETHYLAMINE ALANE ON THE PLASMA-PRETREATED TIN SURFACES.KOREAN JOURNAL OF CHEMICAL ENGINEERING. VOL. 17. ISSUE 4. P. 449 -454 | 15 | 100% | 1 |
5 | BULANIN, KM , KONG, MJ , PIROLLI, L , MATHAUSER, AT , TEPLYAKOV, AV , (2003) ADSORPTION AND THERMAL DECOMPOSITION OF DIETHYLALUMINUM HYDRIDE ON SI(100)-2 X 1.SURFACE SCIENCE. VOL. 542. ISSUE 3. P. 167-176 | 24 | 49% | 4 |
6 | WADAYAMA, T , TAKEUCHI, K , MUKAI, K , TANABE, T , HATTA, A , (2002) INFRARED SPECTROSCOPIC STUDY OF DIMETHYLALUMINUM-HYDRIDE ADSORPTION ON OXIDIZED, HYDROGEN-TERMINATED, AND RECONSTRUCTED SI SURFACES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 20. ISSUE 2. P. 299 -304 | 17 | 68% | 2 |
7 | LIU, Y , OVERZET, LJ , GOECKNER, MJ , (2006) CHEMICAL VAPOR DEPOSITION OF ALUMINUM FROM METHYLPYRROLIDINE ALANE COMPLEX.THIN SOLID FILMS. VOL. 510. ISSUE 1-2. P. 48-54 | 10 | 100% | 13 |
8 | UESUGI, F , NISHIYAMA, I , (1994) PHOTON ENERGY-DEPENDENCE OF SYNCHROTRON-RADIATION-INDUCED GROWTH SUPPRESSION AND INITIATION IN AL CHEMICAL-VAPOR-DEPOSITION.APPLIED SURFACE SCIENCE. VOL. 79-80. ISSUE . P. 203 -207 | 15 | 100% | 9 |
9 | HANABUSA, M , KOMATSU, A , (1994) PHOTOINDUCED MODIFICATION OF THE CATALYTIC REACTION OF TITANIUM-OXIDE AND PALLADIUM IN CHEMICAL-VAPOR-DEPOSITION OF AL FILMS.APPLIED PHYSICS LETTERS. VOL. 65. ISSUE 14. P. 1826-1828 | 15 | 100% | 6 |
10 | JEGIER, JA , GLADFELTER, WL , (2000) THE USE OF ALUMINUM AND GALLIUM HYDRIDES IN MATERIALS SCIENCE.COORDINATION CHEMISTRY REVIEWS. VOL. 206. ISSUE . P. 631 -650 | 31 | 36% | 38 |
Classes with closest relation at Level 1 |