Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
22649 | 373 | 18.8 | 45% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
746 | 2 | BETA FESI2//SILICIDES//SERIES RESISTANCE | 12475 |
22649 | 1 | W TI THIN FILMS//W 10TI ALLOY//W 10WTTI ALLOY | 373 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | W TI THIN FILMS | authKW | 582139 | 2% | 89% | 8 |
2 | W 10TI ALLOY | authKW | 163727 | 1% | 100% | 2 |
3 | W 10WTTI ALLOY | authKW | 163727 | 1% | 100% | 2 |
4 | W TI ALLOY | authKW | 147352 | 1% | 60% | 3 |
5 | PULSED TEA CARBON DIOXIDE LASER | authKW | 109150 | 1% | 67% | 2 |
6 | ALUMINUM SILICA COPPER FILMS | authKW | 81863 | 0% | 100% | 1 |
7 | ALUMINUM TANTALUM ALLOY THIN FILMS | authKW | 81863 | 0% | 100% | 1 |
8 | ALUMINUM TANTALUM SILICON ALLOY THIN FILMS | authKW | 81863 | 0% | 100% | 1 |
9 | CONCENTRATION PENETRATION PLOT | authKW | 81863 | 0% | 100% | 1 |
10 | DIAMOND DETECTOR FOR UV RADIATION | authKW | 81863 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 6922 | 31% | 0% | 116 |
2 | Physics, Applied | 4767 | 71% | 0% | 265 |
3 | Physics, Condensed Matter | 1236 | 31% | 0% | 116 |
4 | Materials Science, Multidisciplinary | 1198 | 40% | 0% | 151 |
5 | Engineering, Electrical & Electronic | 101 | 12% | 0% | 45 |
6 | Metallurgy & Metallurgical Engineering | 92 | 6% | 0% | 23 |
7 | Electrochemistry | 22 | 3% | 0% | 10 |
8 | Instruments & Instrumentation | 12 | 3% | 0% | 10 |
9 | Nanoscience & Nanotechnology | 12 | 3% | 0% | 11 |
10 | Materials Science, Characterization, Testing | 10 | 1% | 0% | 3 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ELECT MAT INFILTRAT TECHNOL | 81863 | 0% | 100% | 1 |
2 | ELECT PLICAT CIRCUITS | 81863 | 0% | 100% | 1 |
3 | FDN MICROELECT TECHNOL | 81863 | 0% | 100% | 1 |
4 | MAT A153 | 81863 | 0% | 100% | 1 |
5 | PROC INTEGRAT HIGH VOLTAGE | 81863 | 0% | 100% | 1 |
6 | THIN FILMS COATINGS GRP | 81863 | 0% | 100% | 1 |
7 | CNRSUFR SFA | 20464 | 0% | 25% | 1 |
8 | INORGAN MAT POLYMER NANOCOMPOSITE | 20464 | 0% | 25% | 1 |
9 | SHAANXI PROV ELECT MAT INFILTRAT TECHNO | 18188 | 1% | 11% | 2 |
10 | TERMINAL EFFECTS | 13642 | 0% | 17% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | THIN SOLID FILMS | 10148 | 18% | 0% | 67 |
2 | MATERIALS SCIENCE REPORTS | 3896 | 0% | 5% | 1 |
3 | JOURNAL OF APPLIED PHYSICS | 3125 | 17% | 0% | 64 |
4 | SOLID STATE TECHNOLOGY | 2816 | 2% | 0% | 8 |
5 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1459 | 4% | 0% | 16 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1101 | 1% | 0% | 4 |
7 | SOVIET MATERIALS SCIENCE | 692 | 0% | 1% | 1 |
8 | VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 677 | 1% | 0% | 2 |
9 | RESEARCH & DEVELOPMENT | 609 | 0% | 1% | 1 |
10 | APPLIED SURFACE SCIENCE | 503 | 4% | 0% | 15 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | HUNG, LS , (1992) INTERACTIONS BETWEEN BINARY METALLIC ALLOYS AND SI, GESI AND GAAS.MATERIALS SCIENCE REPORTS. VOL. 7. ISSUE 6. P. 221-269 | 54 | 42% | 2 |
2 | PETROVIC, S , GAKOVIC, B , PERUSKO, D , TRTICA, M , RADAK, B , PANJAN, P , MILJANIC, S , (2008) SURFACE MODIFICATION OF A WTI THIN FILM ON SI SUBSTRATE BY NANOSECOND LASER PULSES.APPLIED SURFACE SCIENCE. VOL. 254. ISSUE 13. P. 4013 -4017 | 11 | 79% | 0 |
3 | PETROVIC, S , PERUSKO, D , RADOVIC-BOGDANOVIC, I , BRANKOVIC, G , CEKADA, M , GAKOVIC, B , JAKSIC, M , TRTICA, M , MILOSAVLJEVIC, M , (2012) EVALUATION OF THE COMPOSITION AND MORPHOLOGY OF A WTI/SI SYSTEM PROCESSED BY A PICOSECOND LASER.METALS AND MATERIALS INTERNATIONAL. VOL. 18. ISSUE 3. P. 457-463 | 11 | 65% | 0 |
4 | BERGSTROM, DB , PETROV, I , GREENE, JE , (1997) AL/TIXW1-X METAL/DIFFUSION-BARRIER BILAYERS: INTERFACIAL REACTION PATHWAYS AND KINETICS DURING ANNEALING.JOURNAL OF APPLIED PHYSICS. VOL. 82. ISSUE 5. P. 2312-2322 | 17 | 63% | 13 |
5 | JIE, XZ , LIANG, SH , WANG, QX , ZHAO, X , FAN, ZK , WANG, XH , (2012) THE EFFECT OF SINTERING TEMPERATURE ON MECHANICAL AND ELECTRICAL PROPERTIES OF A W-10TI ALLOY PREPARED BY HOT PRESS SINTERING.JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE. VOL. 21. ISSUE 1. P. 101-104 | 9 | 69% | 1 |
6 | BENTZUR, M , EIZENBERG, M , GREENBLATT, J , (1991) THE THERMAL-STABILITY OF AL/TI-TA METALLIZATION ON SI.JOURNAL OF APPLIED PHYSICS. VOL. 69. ISSUE 7. P. 3907-3914 | 13 | 93% | 9 |
7 | PLAPPERT, M , HUMBEL, O , KOPROWSKI, A , NOWOTTNICK, M , (2012) CHARACTERIZATION OF TI DIFFUSION IN PVD DEPOSITED WTI/ALCU METALLIZATION ON MONOCRYSTALLINE SI BY MEANS OF SECONDARY ION MASS SPECTROSCOPY.MICROELECTRONICS RELIABILITY. VOL. 52. ISSUE 9-10. P. 1993-1997 | 7 | 88% | 0 |
8 | BRISKIN, G , PELLEG, J , TALIANKER, M , (1996) PHASE FORMATION BETWEEN CODEPOSITED CO-TA THIN FILM AND SINGLE-CRYSTAL SILICON SUBSTRATES.THIN SOLID FILMS. VOL. 288. ISSUE 1-2. P. 132-138 | 15 | 63% | 9 |
9 | BERGSTROM, DB , PETROV, I , ALLEN, LH , GREENE, JE , (1995) REACTION PATHS AND KINETICS OF ALUMINIDE FORMATION IN AL/EPITAXIAL-W(001) MODEL DIFFUSION BARRIER SYSTEMS.JOURNAL OF APPLIED PHYSICS. VOL. 78. ISSUE 1. P. 194-203 | 15 | 65% | 2 |
10 | GROMOV, DG , MOCHALOV, AI , PUGACHEVICH, VP , SOROKIN, IN , (2000) INTERACTION BETWEEN BINARY ALLOY THIN FILMS AND SILICON SUBSTRATE: THE CONDITIONS OF BILAYER FORMATION AND THE EFFECT OF ADDITIONAL COMPONENT.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 70. ISSUE 3. P. 333-340 | 11 | 73% | 3 |
Classes with closest relation at Level 1 |